Claims
- 1. A process for manufacturing a packaging film that is transparent to UV light and has a barrier action against water vapor and gases, the packaging film includes a substrate film of a polyolefin or polyamide with a ceramic coating layer of SiOx, where x is a number from 1.5 to 1.8, the thickness of the ceramic coating layer is 10 nm to 2 μm, the ceramic coating layer of SiOx is deposited onto the polyolefin or polyamide substrate film using a vacuum thin film deposition process by depositing silicon oxide (SiO2) and elementary silicon (Si) simultaneously in vacuum.
- 2. The process according to claim 1, wherein SiO2 and Si are vaporized together as a mixture.
- 3. The process according to claim 2, wherein Al2O3, B2O3 and/or MgO in an amount up to 50 mol percent, with reference to the SiO2, are simultaneously in vacuum deposited with said SiO2 and said Si.
- 4. The process according to claim 3, wherein the amount of said Al2O3, B2O3 and/or MgO is 5 to 30 mol percent, with reference to the SiO2.
- 5. The process according to claim 3, wherein, prior to the SiOx coating, the substrate is subjected to a plasma pretreatment.
- 6. The process according to claim 3, wherein, the amount of SiO2 to Si is adjusted such that, stoichiometrically, a deficit of 10 to 30 percent of oxygen, with reference to the SiO2, results in said SiOx.
- 7. The process according to claim 3, wherein Al, B and/or Mg in pure form or as Si alloy, in an amount up to 50 mol percent, with reference to Si, are simultaneously in vacuum deposited with said SiO2 and said Si.
- 8. The process according to claim 7, wherein the amount of said Al, B and/or Mg in pure form or as Si alloy is 5 to 30 mol percent, with reference to the Si.
- 9. The process according to claim 7, wherein the ratio of SiO2, Al2O3, B2O3 and/or MgO to Si and Al, B and/or Mg is adjusted such that there is a stoichiometric deficit of 10 to 30 percent oxygen, with reference to the sum of the SiO2 and Al2O3, B2O3 and/or MgO.
- 10. The process according to claim 9, wherein, prior to the SiOx coating, the substrate is subjected to a plasma pretreatment.
- 11. The process according to claim 2, wherein Al, B and/or Mg in pure form or as Si alloy, in an amount up to 50 mol percent, with reference to Si, are simultaneously in vacuum deposited with said SiO2 and said Si.
- 12. The process according to claim 11, wherein the amount of said Al, B and/or Mg in pure form or as Si alloy is 5 to 30 mol percent, with reference to the Si.
- 13. The process according to claim wherein, prior to the SiOx coating, the substrate is subjected to a plasma pretreatment.
- 14. The process according to claim 1, wherein Al2O3, B2O3 and/or MgO in an amount up to 50 mol percent, with reference to the SiO2, are simultaneously in vacuum deposited with said SiO2 and said Si.
- 15. The process according to claim 14, wherein the amount of said Al2O3, B2O3 and/or MgO is 5 to 30 mol percent, with reference to the SiO2.
- 16. The process according to claim 14, wherein, prior to the SiOx coating, the substrate is subjected to a plasma pretreatment.
- 17. The process according to claim 14, wherein the amount of SiO2 to Si is adjusted such that stoichiometrically, a deficit of 10 to 30 percent of oxygen with reference to the SiO2, results in said SiOx.
- 18. The process according to claim 14, wherein Al, B and/or Mg in pure form or as Si alloy, in an amount up to 50 mol percent, with reference to the Si, are simultaneously in vacuum deposited with said SiO2 and said Si.
- 19. The process according to claim 18, wherein the amount of said Al, B and/or Mg in pure form or as Si alloy is 5 to 30 mol percent, with reference to the Si.
- 20. The process according to claim 19, wherein, prior to the SiOx coating, the substrate is subjected to a plasma pretreatment.
- 21. The process according to claim 18, wherein the ratio of SiO2, and Al2O3, B2O3 and/or MgO to Si and Al, B and/or Mg is adjusted such that there is a stoichiometric deficit of 10 to 30 percent oxygen, with reference to the sum of the SiO2 and Al2O3, B2O3 and/or MgO.
- 22. The process according to claim 1, wherein Al, B and/or Mg in pure form or as Si alloy, in an amount up to 50 mol percent, with reference to Si, are simultaneously in vacuum deposited with said SiO2 and said Si.
- 23. The process according to claim 22, wherein the amount of said Al, B and/or Mg in pure form or as Si alloy is 5 to 30 mol percent, with reference to the Si.
- 24. The process according to claim 22, wherein prior to the SiOx coating, the substrate is subjected to a plasma pretreatment.
- 25. The process according to claim 1, wherein the amount of SiO2 to Si is adjusted such that, stoichiometrically, a deficit of 10 to 30 percent of oxygen, with reference to the SiO2, results in said SiOx.
- 26. The process according to claim 25, wherein, prior to SiOx coating, the substrate film is subjected to a plasma pretreatment.
- 27. The process according to claim 1, wherein, prior to SiOx coating, the substrate film is subjected to a plasma pretreatment.
- 28. A process for manufacturing a packaging film that is transparent to UV light and has a barrier action against water vapor and gases, the packaging film includes a substrate film of a polyolefin or polyamide with a ceramic coating layer of SiOx, where x is a number from 1.5 to 1.8, the thickness of the ceramic coating layer is 10 nm to 2 μm, the ceramic coating layer of SiOx is deposited onto the polyolefin or polyamide substrate film using a vacuum thin film deposition process by depositing silicon oxide (SiO2) and elementary silicon (Si) simultaneously in vacuum in a proportion which provides said SiOx.
- 29. A process for manufacturing a packaging film that is transparent to UV light and has a barrier action against water vapor and gases, the packaging film includes a substrate film of a polyolefin or polyamide with a ceramic coating layer of SiOx, where x is a number from 1.5 to 1.8, the thickness of the ceramic coating layer is 10 nm to 2 μm, the ceramic coating layer of SiOx is deposited onto the polyolefin or polyamide substrate film using a vacuum thin film deposition process by simultaneous evaporation in vacuum of silicon oxide (SiO2) and elementary silicon (Si) in proportion such that equilibrium composition of the SiO2 and Si in vapor phase corresponds to SiOx.
Parent Case Info
This is a division of U.S. Ser. No. 08/963,266, filed on Nov. 3, 1997, now U.S. Pat. No. 6,027,793, issued on Feb. 22, 2000.
US Referenced Citations (9)
Foreign Referenced Citations (3)
Number |
Date |
Country |
0549528 |
Dec 1992 |
EP |
0622399 |
Apr 1994 |
EP |
2712310 |
Nov 1993 |
FR |
Non-Patent Literature Citations (2)
Entry |
Von Klaus Maschig, “Verpackungstechnik: neue Materialien Weich und glasig,” vol. 82, No. 36 (Sep. 30, 1990), pp. 64 to 67, (Maschig). |
Chemical Abstracts, vol. 86, No. 26, (Jun. 27, 1977), abstract No. 191013q. |