Claims
- 1. A process for manufacturing a SiC-based ceramic precursor which is substantially free from oxygen, consisting essentially of curing by heating a polycarbosilane shaped body in contact with vapor of at least one hydrocarbon selected from the group consisting of unsaturated hydrocarbons of ethylene series and acetylene series at a temperature elevation rate of 5.degree.-20.degree. C./hour.
- 2. The process as claimed in claim 1, wherein said at least one hydrocarbon has at most 10 carbon atoms.
- 3. The process as claimed in claim 1, wherein said heating is conducted within a temperature range of 50.degree. to 400.degree. C.
- 4. The process as claimed in claim 1, wherein said heating is conducted by raising a temperature from room temperature up to a temperature within a range of 50.degree. to 400.degree. C.
- 5. The process as claimed in claim 1, wherein said vapor of at least one hydrocarbon contacts using an inert gas as a carrier gas.
- 6. The process as claimed in claim 1, wherein said polycarbosilane shaped body is a finely shaped body having an average diameter or thickness of at most about 5 mm, selected from the group consisting of powders, fibers and films.
Priority Claims (1)
Number |
Date |
Country |
Kind |
3-044587 |
Jan 1991 |
JPX |
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Parent Case Info
This application is a continuation of application Ser. No. 07/823,333, filed Jan. 21, 1992 now abandoned.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
4847027 |
Lu |
Jul 1989 |
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3119114 |
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Non-Patent Literature Citations (2)
Entry |
Chemical Abstracts, vol. 114, No. 16, 22 Apr. 1991, U.S., Abstract No. 145d, Shimada et al, "Manufacture of Silicon . . . ". |
"Polymer Preprints, Japan", vol. 38, No. 12, (1989)/& Eng Trans. Seguchi et al; 3X095 Curing Treatment by Irradiation. |
Continuations (1)
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Number |
Date |
Country |
Parent |
823333 |
Jan 1992 |
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