Claims
- 1. A process of absorbing photons and removing electrons directed from a face plate towards a base plate of a field emission display comprising, operating the field emission display with a conductive and light absorbing layer comprising praseodymium-manganese oxide deposited on an interior surface of the base plate to absorb the photons emitted from the face plate and received by the base plate by conducting the electrons to an underlying conductivity gate, the layer having a resistivity not exceeding 1×105 Ω-cm.
- 2. The process of claim 1 wherein the layer has a resistivity which does not exceed 1×104 Ω-cm.
- 3. The process of claim 1 wherein the layer has a resistivity which does not exceed 1×103 Ω-cm.
- 4. The process of claim 1 wherein the layer has a thickness which ranges from 1,000 Å to 15,000 Å.
- 5. The process of claim 1 wherein the layer has a light absorption coefficient of at least 1×105 cm−1 at a wavelength of 500 nm.
- 6. The process of claim 1 wherein the layer is coated on the interior surface of the baseplate by radiofrequency sputtering, laser ablation, plasma deposition, chemical vapor deposition or electron beam evaporation.
- 7. The process of claim 6 wherein the layer is coated on a surface of the baseplate by radiofrequency sputtering.
- 8. The process of claim 7 wherein Pr6O11 and a manganese source selected from a group consisting of MnO2 and MnCO3 form a sputtering target for the radiofrequency sputtering.
- 9. The process of claim 1 wherein the layer is coated on a surface of the baseplate by chemical vapor deposition.
- 10. The process of claim 9 wherein a praseodymium source selected from a group consisting of praseodymium acetate, praseodymium oxalate and Pr(Thd), is used to form the layer.
- 11. The process of claim 9 wherein a manganese source selected from a group consisting of manganese acetate, manganese carbonyl, manganese methoxide and manganese oxalate is used to form the layer.
- 12. The process of claim 1 wherein the layer further comprises a conductive ion.
- 13. The process of claim 1 wherein the layer further comprises a metal.
- 14. The process of claim 1 wherein the layer comprises praseodymium oxide and manganese oxide.
- 15. The process of claim 1 wherein the layer has a molar ratio of praseodymium to manganese ranging from 0.1:1 to 1:0.1.
- 16. The process of claim 1 wherein the layer comprises PrMnO3.
- 17. The process of claim 1 wherein the conductivity gate is positively electrically biased relative to the layer.
- 18. The process of claim 1 wherein the conductivity gate is further comprised of an intermediate insulative layer interposed between the layer and the conductivity gate.
- 19. The process of claim 18 wherein the conductivity gate is electrically coupled to a ground potential.
CROSS-REFERENCE TO RELATED APPLICATION
This application is a divisional of U.S. patent application Ser. No. 08/777,797 filed Dec. 31, 1996, now U.S. Pat. No. 5,776,540, which is a divisional of U.S. patent application Ser. No. 08/645,615, filed May 14, 1996 now U.S. Pat. No. 5,668,437.
Government Interests
This invention was made with Government support under Contact No. DABT63-93-C0025 awarded by Advanced Research Projects Agency (ARPA). The Government has certain rights in this invention.
US Referenced Citations (17)
Foreign Referenced Citations (4)
Number |
Date |
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Mar 1996 |
DE |
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JP |
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4-322219 |
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Non-Patent Literature Citations (2)
Entry |
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Matsuoka et al., “Black Pr-Mn Oxide Dielectric Material for AC Thin-Film Electroluminescent Display,” J. Electrochem Soc., 135(7):1836-1839, 1988. |