Takao; Abe, Electrochemical Society Proceedings vol. 97-3, pp. 123-133. |
Hara; Akito, J. Appl. Phys. 66 (8). Oct. 15, 1989 pp. 3958-3960. |
Chiou, Herng-Der, “The Effects of Preheatings on Axial Oxygen Precipitation Uniformity in Czochralski Silicon Crystals”, J. Electrochem Soc., vol. 139, No. 6 (1992). |
Falster, R., et al., “The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behavior”, Mat. Res. Soc. Symp. Proc., vol. 510, pp. 27-35, 1998. |
Jacob, M., et al., “Influence of RTP on Vacancy Concentrations”, Mat. Res. Soc. Symp. Proc. vol. 490, pp. 129-134, 1998. |
Pagani, M., et al., “Spatial variations in oxygen precipitation in silicon after high temperature rapid thermal annealing”, Appl. Phys. Lett., vol. 70, No. 12, pp. 1572-1574, 1997. |
Abe, et al., “Defect-Free Surfaces of Bulk Wafers by Combination of RTA and Crystal Growth”, (publication information unknown). |
Abe, et al., “Innovated Silicon Crystal Growth and Wafering Technologies”, Electrochemical Society Proceedings, vol. 97, No. 3, pp. 123-133. |
Hara, et al., “Enhancement of Oxygen Precipitation in Quenched Czochralski Silicon Crystals”, J. Appl. Phys., vol. 66, No. 8 (1989), pp. 3958-3960. |
Jacob, et al., “Determination of Vacancy Concentrations in the Bulk of Silicon Wafers by Platinum Diffusion Experiments”, J. Appl. Phys., vol. 82, No. 1 (1997), pp. 182-191. |
Nadahara, et al., “Hydrogen Annealed Silicon Wafer”, Solid State Phenomena, vols. 57-58 (1997), pp. 19-26. |
Shimura, Fumio, “Semiconductor Silicon Crystal Technology”, Academic Press, Inc., San Diego, CA (1989), pp. 361-367. |
Winkler, et al., “Improvement of the Gate Oxide Integrity by Modifying Crystal Pulling and Its Impact on Device Failures”, J. Electrochem. Soc., vol. 141, No. 5 (1994), pp. 1398-1401. |
Zimmermann, et al., “Gold and Platinum Diffusion: The Key to the Understanding of Intrinsic Point Defect Behavior in Silicon”, Appl. Phys. A, vol. 55 (1992), pp. 121-134. |
Zimmermann, et al., “Investigation of the Nucleation of Oxygen Precipitates in Czochralski Silicon at an Early Stage”, Appl. Physl. Lett, vol. 60, No. 26 (1992), pp. 3250-3253. |
Zimmermann, et al., “The Modeling of Platinum Diffusion in Silicon Under Non-equilibrium Conditions”, J. Electrochem. Soc., vol. 139, No. 1 (1992), pp. 256-262. |
Zimmermann, et al., “Vacancy Concentration Wafer Mapping in Silicon”, Journal of Crystal Growth, vol. 129 (1993), pp. 582-592. |