Claims
- 1. A vapor phase process for producing substantially anatase-free TiO.sub.2 comprising reacting vaporous TiCl.sub.4, an oxygen containing gas and an aluminum halide in a plug flow reactor and introducing a silicon halide at a process temperature in the range from about 1200.degree. C. to about 1600.degree. C. and the silicon halide is added at one or more points downstream of where the oxygen containing gas and TiCl.sub.4 are initially contacted wherein substantially anatase-free TiO.sub.2 is produced.
- 2. The process of claim 1 wherein the silicon halide is SiCl.sub.4 and is added in an amount sufficient to provide about 0.1 to 10.0% by weight SiO.sub.2.
- 3. The process of claim 2 wherein the SiCl.sub.4 is added in an amount sufficient to provide about 0.5 to 5.0% by weight SiO.sub.2 and the process temperature is about 1400.degree. C. to about 1600.degree. C.
- 4. The process of claim 3 wherein the SiCl.sub.4 is added in an amount to provide about 0.5 to 3% by weight SiO.sub.2.
- 5. The process of any of claim 4 wherein the aluminum halide is premixed with the TiCl.sub.4 and the oxygen containing gas further comprises a vaporized alkali metal salt.
- 6. The process of claim 5 wherein the aluminum halide is AlCl.sub.3 and is added in an amount sufficient to provide about 0.5 to 10% by weight Al.sub.2 O.sub.3.
- 7. The process of claim 6 wherein the SiCl.sub.4 is added at a point where scrubs are introduced in a cooling conduit.
- 8. The process of claim 1 wherein the amount of silica added at a subsequent surface treatment step is reduced.
CROSS REFERENCE TO RELATED APPLICATIONS
This application is a continuation-in-part of U.S. patent application Ser. No.08/267,329, filed 28 June 1994, now abandoned.
US Referenced Citations (14)
Foreign Referenced Citations (4)
Number |
Date |
Country |
0486632 |
May 1992 |
AUX |
815891 |
Jul 1959 |
GBX |
1069071 |
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992414 |
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Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
267329 |
Jun 1994 |
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