Claims
- 1. A process for preparing compounds having the formula (R).sub.4 Te which comprises reacting TeCl.sub.4 with at least four molar proportions of a compound selected from the group consisting of RLi and RMgX, in the absence of light and air, and isolating said compounds, wherein
- R is a non-aryl organyl group
- X is a halide.
- 2. The process of claim 1 for preparing compounds having the formula (R).sub.4 Te wherein, R is selected from the group consisting of alkyl and alkenyl.
- 3. The process of claim 1 for preparing compounds having the formula (R).sub.4 Te wherein, R is selected from the group consisting of methyl, trimethylsilylmethyl, and vinyl.
- 4. The process of claim 1 for preparing compounds having the formula (R).sub.4 Te which comprises reacting the TeCl.sub.4 with an excess of greater than four molar proportions of said organyl lithium compound in a suitable solvent.
- 5. The process of claim 1 for preparing compounds having the formula (R).sub.4 Te which comprises reacting the TeCl.sub.4 with an excess of greater than four molar proportions of said organyl magnesium halide compound in a suitable solvent.
- 6. The process of claim 4 for preparing tetramethyl tellurium which comprises reacting the TeCl.sub.4 with greater than four molar proportions of methyl lithium in the absence of light and air, and isolating said compound.
- 7. The process of claim 5 for preparing tetra(trimethylsilylmethyl) tellurium which comprises reacting the TeCl.sub.4 with greater than four molar proportions of trimethylsilylmethyl magnesium chloride in the absence of light and air, and isolating said compound.
- 8. The process of claim 5 for preparing tetravinyl tellurium which comprises reacting the TeCl.sub.4 with greater than four molar proportions of vinyl magnesium bromide in the absence of light and air, and isolating said compound.
- 9. The process of claim 1 for preparing compounds having the formula (R).sub.4 Te, wherein the process is performed in a suitable solvent, wherein said solvent is selected from the group consisting of diethyl ether, THF, and mixtures thereof.
- 10. A process for preparing tetramethyl tellurium which comprises reacting TeCl.sub.4 with methyl lithium in a molar proportion of 1 to about 4.2 at temperatures between about -100.degree. C. and about 25.degree. C., in a suitable solvent and in the absence of light and air, forming tetramethyl tellurium, and recovering said tetramethyl tellurium.
- 11. The process of claim 10 for preparing tetramethyl tellurium, said solvent being selected from the group consisting of diethyl ether, THF, and mixtures thereof.
- 12. A process for preparing tetra(trimethylsilylmethyl) tellurium which comprises reacting TeCl.sub.4 with trimethylsilylmethyl magnesium chloride in a molar proportion of 1 to about 4.2 at temperatures between about -100.degree. C. and about 25.degree. C. in a suitable solvent and in the absence of light and air, forming tetra(trimethylsilylmethyl) tellurium, and recovering said tetra(trimethylsilylmethyl) tellurium.
- 13. The process of claim 12 for preparing tetra(trimethylsilylmethyl) tellurium, said solvent being selected from the group consisting of: diethyl ether, THF, and mixtures thereof.
- 14. A process for preparing tetravinyl tellurium which comprises reacting TeCl.sub.4 with vinyl magnesium bromide in a molar proportion of 1 to about 4.2 at reduced temperatures between about -100.degree. C. and about 0.degree. C., in a suitable solvent and in the absence of light and air, forming tetravinyl tellurium, and recovering said tetravinyl tellurium.
- 15. The process of claim 14 for preparing tetravinyl tellurium, said solvent being selected from the group consisting of diethyl ether, THF, and mixtures thereof.
- 16. The process of claim 9 wherein the process is performed at temperatures below room temperature.
- 17. The process of claim 16, for preparing compounds having the formula (R).sub.4 Te wherein, R is selected from the group consisting of alkyl and alkenyl.
- 18. The process of claim 16 for preparing compounds having the formula (R).sub.4 Te wherein, R is selected from the group consisting of methyl, trimethylsilylmethyl, and vinyl.
- 19. The process of claim 16 for preparing compounds having the formula (R).sub.4 Te which comprises reacting the TeCl.sub.4 with an excess of greater than four molar proportions of said organyl lithium compound in a suitable solvent.
- 20. The process of claim 16 for preparing compounds having the formula (R).sub.4 Te which comprises reacting the TeCl.sub.4 with an excess of greater than four molar proportions of said organyl magnesium halide compound in a suitable solvent.
- 21. The process of claim 16 for preparing tetramethyl tellurium which comprises reacting the TeCl.sub.4 with greater than four molar proportions of methyl lithium in the absence of light and air at temperatures sufficiently low to prevent solvent refluxing, and isolating said compound.
- 22. The process of claim 16 for preparing tetra(trimethyl-silylmethyl)- tellurium which comprises reacting the TeCl.sub.4 with greater than four molar proportions of trimethylsilylmethyl magnesium chloride in the absence of light and air at temperatures sufficiently low to prevent solvent refluxing, and isolating said compound.
- 23. The process of claim 16 for preparing tetravinyl tellurium which comprises reacting the TeCl.sub.4 with greater than four molar proportions of vinyl magnesium bromide in the absence of light and air at temperatures sufficiently low to prevent solvent refluxing, and isolating said compound
Parent Case Info
This is a divisional of application: Ser. No. 07/475,563 filed on Feb. 6, 1990, now allowed.
Non-Patent Literature Citations (2)
Entry |
Hellwinkel et al., Chem. Ber., vol. 101, pp. 574-584 (1968). |
Cohen et al., J. Organomet. Chem., vol. 11, pp. 563-566 (1968). |
Divisions (1)
|
Number |
Date |
Country |
Parent |
475563 |
Feb 1990 |
|