Claims
- 1. A method for producing a semiconductor device under a high vacuum, comprising the steps of:
- a) producing a high vacuum in a semiconductor processing chamber using a non-evaporable getter material prepared according to a process including the steps of:
- I) providing a powder mixture including:
- i) a metallic getter element having a grain size smaller than about 70 .mu.m;
- ii) a getter alloy having a grain size smaller than about 40 .mu.m; and
- iii) an organic component which is solid at room temperature and has the characteristic of evaporating at 300.degree. C. substantially without leaving a residue on the grains of said metallic getter element and said getter alloy when said metallic getter element, said getter alloy and said organic component are sintered to form said getter body; and wherein said organic component has a particle size distribution such that about half of its total weight consists of grains of size smaller than about 50 .mu.m the remainder of said grains of said organic component having a size between about 50 .mu.m and about 150 .mu.m;
- II) subjecting said powder mixture to compression at a pressure less than about 1000 kg/cm.sup.2 to form a compressed powder mixture; and
- III) sintering said compressed powder mixture at a temperature between about 900.degree. C. and about 1200.degree. C. for a period of between about 5 minutes and about 60 minutes wherein said organic component evaporates from said powder mixture substantially without leaving a residue on said grains of said metallic getter element and said getter alloy to form thereby a network of large and small pores in said getter body; and
- b) processing a semiconductor wafer in said processing chamber to produce at least one semiconductor device.
- 2. A process according to claim 1, wherein the weight ratio between the metallic getter element and the getter alloy is between about 1:10 and about 10:1.
- 3. A process according to claim 1, wherein the weight ratio between the metallic getter element and the getter alloy is between about 1:3 and about 3:1.
- 4. A process according to claim 1, wherein the getter alloy is a Zr--V--Fe tertiary alloy having a weight percentage composition of Zr 70%-V 24.6%-Fe 5.4%.
- 5. A process according to claim 1, wherein the metallic getter element is zirconium.
- 6. A process according to claim 1, wherein the organic component is ammonium carbamate.
- 7. A process according to claim 1, wherein the powder mixture is compressed with a pressure between about 50 kg/cm.sup.2 and 800 kg/cm.sup.2.
Priority Claims (2)
Number |
Date |
Country |
Kind |
MI94A2449 |
Dec 1994 |
ITX |
|
MI95A0779 |
Apr 1995 |
ITX |
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Parent Case Info
This is a Continuation application of copending prior application Ser. No. 08/477,100 filed on Jun. 7, 1995, the disclosure of which is incorporated herein by reference.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4671889 |
Schreiner et al. |
Jun 1987 |
|
5685963 |
Lorimer et al. |
Nov 1997 |
|
Foreign Referenced Citations (2)
Number |
Date |
Country |
2171076 |
Sep 1973 |
FRX |
1 373 473 |
Nov 1974 |
GBX |
Continuations (1)
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Number |
Date |
Country |
Parent |
477100 |
Jun 1995 |
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