Claims
- 1. A process for producing a silicon carbide-base complex, comprising the steps of:
- conducting pyrolysis of a gas comprising a hydrocarbon having 1-6 carbon atoms or a hydrocarbon halide having 1-6 carbon atoms to produce carbon and depositing said carbon in a porous synthesized silica glass body,
- heat-treating the same to obtain a porous molding, and
- charging pores of said molding with metallic silicon.
- 2. The process according to claim 1, wherein the mole ratio of carbon deposited in the porous synthesized silica glass body to silicon dioxide is 3 or more.
- 3. The process according to claim 1 or claim 2, wherein the process further comprises the step of:
- reacting excess carbon existing in the porous molding with a charge of metallic silicon.
- 4. The process according to claim 1 or claim 2, wherein the step of charging pores of the porous molding with metallic silicon is achieved by means of infiltration with molten silicon.
- 5. The process according to claim 3, wherein the step of charging pores of the porous molding with metallic silicon is achieved by means of infiltration with molten silicon.
- 6. The process according to claim 1 or claim 2, wherein the step of charging pores of the porous molding with metallic silicon is achieved by means of pyrolysis of a gas including silicon.
- 7. The process according to claim 3, wherein the step of charging pores of the porous molding with metallic silicon is achieved by means of pyrolysis of a gas including silicon.
- 8. A process for producing a silicon carbide-base complex, comprising the steps of:
- joining a first synthesized silica glass porous body at joining plane to to a second synthesized silica porous body to produce a joined body,
- conducting pyrolysis of a gas comprising a hydrocarbon having 1-6 carbon atoms or a hydrocarbon halide having 1-6 carbon atoms so as to carbon and depositing said carbon on a porous synthesized silica glass joined body in a mole ratio of carbon to silicon dioxide of 3.5 or more,
- heat-treating the joined body to produce a silicon carbide molding, and
- charging said porous silicon carbide molding with metallic silicon.
- 9. A process for producing a silicon carbide-base complex, comprising the steps of:
- conducting pyrolysis of a gas comprising a hydrocarbon having 1-6 carbon atoms or a hydrocarbon halide having 1-6 carbon atoms so as to produce carbon and depositing said carbon in porous synthesized silica glass bodies in a mole ratio of carbon to silicon dioxide of 3.5 or more to obtain a porous silicon dioxide-carbon molding,
- joining said porous molding at a joining plane to a second porous silicon dioxide-carbon molding to produce a joined molding,
- heat-treating the the joined molding to obtain a silicon carbide molding, and
- charging said porous silicon carbide molding with metallic silicon.
- 10. A process for producing a silicon carbide-base complex, comprising the steps of:
- conducting pyrolysis of a gas comprising a hydrocarbon having 1-6 carbon atoms or a hydrocarbon halide having 1-6 carbon atoms so as to produce carbon and depositing said carbon in a porous synthesized silica glass body in a mole ratio of carbon to silicon dioxide of 3.5 or more,
- heat-treating the the body to obtain a porous silicon carbide molding,
- joining said porous silicon carbide molding at a joining plane to a second porous silicon carbide molding to produce a joined molding, and
- charging the joined molding with metallic silicon.
- 11. A process for producing a silicon carbide tube, comprising the steps of:
- forming a porous body of silica glass by means of vapor phase synthesis on a surface of tubular material,
- conducting pyrolysis of a gas comprising a hydrocarbon having 1-6 carbon atoms or a hydrocarbon halide having 1-6 carbon atoms so as to produce carbon and depositing said carbon in a porous synthesized silica glass body in a mole ratio of carbon to silicon dioxide of 3 or more,
- heat-treating the body to produce a silicon carbide tube, and
- charging the porous silicon carbide tube with metallic silicon.
- 12. A process according to claim 11, wherein the heat-treating is conducted at a temperature from 1600.degree. C. to 2500.degree. C.
Priority Claims (6)
Number |
Date |
Country |
Kind |
2-183641 |
Jul 1990 |
JPX |
|
2-251222 |
Sep 1990 |
JPX |
|
2-251223 |
Sep 1990 |
JPX |
|
2-261599 |
Sep 1990 |
JPX |
|
2-271669 |
Oct 1990 |
JPX |
|
3-018091 |
Feb 1991 |
JPX |
|
Parent Case Info
This application is a continuation of application Ser. No. 07/727,211 filed Jul. 9, 1991, now abandoned.
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
4028149 |
Deines et al. |
Jun 1977 |
|
4327066 |
Seiyima |
Apr 1982 |
|
4456634 |
Galasso et al. |
Jun 1984 |
|
Foreign Referenced Citations (3)
Number |
Date |
Country |
3337949 |
Apr 1985 |
DEX |
61-006109 |
Jan 1986 |
JPX |
1141812 |
Jun 1989 |
JPX |
Non-Patent Literature Citations (1)
Entry |
Patent Abstracts of Japan, vol. 13, No. 326, Jul. 24, 1989, Kokai-No. 1-103 958. |
Continuations (1)
|
Number |
Date |
Country |
Parent |
727211 |
Jul 1991 |
|