Claims
- 1. A process for producing a device comprising a substrate having thereon a film of a conducting or superconducting carbon cluster covered with a protective film, said process comprising the steps of:
- depositing a carbon cluster on a substrate while adding a dopant to form a carbon cluster conducting or superconducting film on a substrate; and
- forming a protective film impermeable to oxygen and water in the atmosphere to cover said carbon cluster conducting or superconducting film.
- 2. A process for producing a device as claimed in claim 1, wherein said process comprises the steps of:
- depositing a carbon cluster on a substrate while adding a dopant to form a carbon cluster conducting or superconducting film on a substrate;
- depositing a carbon cluster on said carbon cluster conducting or superconducting film to form a carbon cluster film; and
- forming a protective film impermeable to oxygen and water in the atmosphere to cover said carbon cluster conducting or superconducting film and said carbon cluster film.
- 3. A process for producing a device as claimed in claim 1, wherein said protective film comprises a non-metallic substance having a thermal expansion coefficient of from 1.times.10.sup.-6 /.degree.C. to 5.times.10.sup.-6 /.degree.C.
- 4. A process for producing a device as claimed in claim 1, wherein the carbon cluster conducting or superconducting film is a continuous film having a thickness of 350 nm.
- 5. A process for producing a device as claimed in claim 1, wherein the substrate is silicon or quartz.
- 6. A process for producing a device as claimed in claim 2, wherein the carbon cluster film deposited on the carbon cluster conducting or superconducting film has a thickness of from 100 to 1000 nm.
- 7. A process for producing a device as claimed in claim 2, wherein the carbon cluster film deposited on the carbon cluster conducting or superconducting film has a thickness of 200 nm.
- 8. A process for producing a device as claimed in claim 1, wherein the protective film has a thickness of from 0.1 to 10 .mu.m.
- 9. A process for producing a device as claimed in claim 1, wherein the protective film has a thickness of 4000 .ANG..
Priority Claims (3)
Number |
Date |
Country |
Kind |
4-127027 |
May 1992 |
JPX |
|
4-220407 |
Aug 1992 |
JPX |
|
5-043730 |
Mar 1993 |
JPX |
|
Parent Case Info
This is a Divisional of application Ser. No. 08/393,043 filed Feb. 23, 1995, now U.S. Pat. No. 5,589,281, which is a Continuation of application Ser. No. 08/051,345 filed Apr. 23, 1993, now abandoned.
US Referenced Citations (8)
Foreign Referenced Citations (2)
Number |
Date |
Country |
A20522807 |
Jan 1993 |
EPX |
5-205542 |
Aug 1993 |
JPX |
Non-Patent Literature Citations (4)
Entry |
Zhao et al, "Rubidium-Doped Epitaxial C.sub.60 Thin Films: Synthesis and Electronic Transport", J. Phys.: Condens. Matter 5 (1993), L409-L414. |
Gu Zhennan et at., "Superconductivity in Sn-doped C60" Solid State Communications, Pergamon Press, Oxford, vol. 82, No. 3, Apr. 1992, pp. 167-170 (abstract; p. 167). |
Rudy Baum, "Commercial Uses of Fullerenes and Derivatives Slow to Develop", C&EN West Coast News Nov. 22, 1993, pp. 11-12, 15-18. |
Wenbing Zhao et al., "Condensed Matter", Journal of Physics, vol. 4, Oct. 5, 1992, pp. L513-L514. |
Divisions (1)
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Number |
Date |
Country |
Parent |
393043 |
Feb 1995 |
|
Continuations (1)
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Number |
Date |
Country |
Parent |
51345 |
Apr 1993 |
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