Claims
- 1. A process for producing a transparent, carbon nitride film on a substrate comprising:
- sputter depositing carbon atoms from a carbon target onto a substrate using a magnetron sputter gun; and
- simultaneously depositing nitrogen atoms onto the substrate from an ion beam source in an atmosphere of less than 2.5 Pa of nitrogen gas to produce a carbon nitride film having a nitrogen content of about 36% and having a transmittance of at least 95% compared to glass throughout the visible spectrum when the film has a thickness of 40 nm.
- 2. A process of claim 1, wherein the sputter pressure of nitrogen is from 0.2 to 0.3 Pa.
- 3. A process of claim 1, wherein the sputter deposition power is from 100 to 400 W for a 20 cm.sup.2 target.
- 4. A process of claim 1, wherein the magnetron sputtering is rf, and is at 150 to 200 W for a 20 cm.sup.2 target.
- 5. A process of claim 1, wherein 10 W/cm.sup.2 sputtering is used.
- 6. A process of claim 1, wherein the ion beam voltages range from 20 to 500 V.
- 7. A process of claim 6, wherein ion beam voltage is in the range of 20 to 100 V.
- 8. A process of claim 7, which further comprises an amperage in the range of 5 to 10 mA.
- 9. A process of claim 1, wherein the ion beam amperes are in the range of 2 to 10 mA.
- 10. A process of claim 1, wherein the substrate is chosen from the group consisting of: silicon oxides, aluminum oxides, fused quartz, glass, copper, PMMA, polycarbonates, and nickel alloys.
- 11. A process of claim 10, wherein the substrate is a transparent glass.
- 12. A process of claim 1, wherein the ion source to target distance is in the range of 5 to 15 cm.
- 13. A process of claim 12, wherein the ion source to target distance is 10 cm.
- 14. A process of claim 1, wherein the substrate temperature is in the range of 50 to 200 degrees centigrade.
- 15. A process for producing a transparent, carbon nitride film on a substrate comprising:
- sputter depositing carbon atoms from a carbon target onto a substrate using a magnetron sputter gun; and
- simultaneously depositing nitrogen atoms onto the substrate from an ion beam source in an atmosphere of less than 2.5 Pa of nitrogen gas to produce a carbon nitride film having a nitrogen content of about 36% and having a transmittance of at least 95% compared to glass for photons having energies of 0.5 to 3 eV when the film has a thickness of 40 nm.
Parent Case Info
This application is a Division of application Ser. No. 08/328,806, filed Oct. 25, 1994, now U.S. Pat. No. 5,573,864.
US Referenced Citations (7)
Divisions (1)
|
Number |
Date |
Country |
Parent |
328806 |
Oct 1994 |
|