Claims
- 1. A process for producing coarse tungsten monocarbide crystals comprising the steps of:
- (a) providing an alkali metal halide salt containing tungsten oxide;
- (b) reacting a solid carbonaceous reactant selected from the group consisting of natural flake graphite, carbon black, HPN-200 graphite and sugar with said alkali metal halide salt containing tungsten oxide without sparging with a hydrocarbon gas to produce coarse tungsten monocarbide crystals at least 50% of which are larger than 15 micrometers; and
- (c) removing said coarse tungsten monocarbide crystals from the remaining reaction products and any unreacted material.
- 2. The process as set forth in claim 1 further comprising the steps of:
- (a) mixing an alkali metal halide, an alkali silicate and a tungsten oxide concentrate to form a blend;
- (b) melting said blend to form a halide salt phase containing tungsten oxide and a slag phase containing silicates and impurities; and
- (c) separating from the slag phase an alkali metal halide salt containing tungsten oxide.
- 3. The process as set forth in claim 2 wherein the alkali metal halide is selected from the group consisting of sodium chloride, potassium chloride, lithium chloride, sodium bromide, potassium bromide, lithium bromide, sodium fluoride, potassium fluoride, lithium fluoride, sodium aluminum fluoride and potassium aluminum fluoride.
- 4. The process as set forth in claim 2 wherein the alkali silicate is sodium meta-silicate.
- 5. The process as set forth in claim 2 wherein the tungsten oxide concentrate is selected from the group consisting of wolframite and scheelite.
- 6. The process as set forth in claim 2 wherein the alkali metal halide is sodium chloride, the alkali silicate is sodium silicate and the carbonaceous reactant is natural flake graphite.
- 7. The process as set forth in claim 2 wherein the reacting of said carbonaceous reactant with the tungsten values occurs at a temperature of between 900.degree. C. and 1100.degree. C.
- 8. The process as set forth in claim 7 wherein the temperature is approximately 1070.degree. C.
- 9. The process as set forth in claim 2 further including the step of cleaning the coarse tungsten monocarbide crystals to yield pure coarse tungsten monocarbide.
- 10. The process as set forth in claim 9 wherein the cleaning includes leaching with a hydrochloric acid solution.
- 11. The process as set forth in claim 9 wherein the cleaning includes gravity separation to remove any free carbon.
- 12. The process as set forth in claim 2 wherein the carbonaceous reactant is added to the salt phase while the salt phase is in a molten condition.
- 13. The process as set forth in claim 2 wherein the carbonaceous reactant is added to the salt phase while the salt phase is in a solid condition.
- 14. The process as set forth in claim 2 wherein the coarse tungsten monocarbide comprises blocky or thick bladed and equant crystals.
- 15. The process as set forth in claim 14 wherein at least 50% of said coarse tungsten monocarbide crystals formed are larger than 53 micrometers.
- 16. The process as set forth in claim 2 wherein the carbonaceous reactant is a natural flake graphite having at least 50% of the natural flake graphite particles larger than 500 micrometers.
- 17. The process as set forth in claim 2 wherein at least 50% of the carbonaceous reactant is larger than 200 micrometers.
Parent Case Info
This is a continuation of copending application Ser. No. 07/299,298 filed on Jan. 23, 1989, abandoned.
US Referenced Citations (11)
Non-Patent Literature Citations (1)
Entry |
"Preparation of Tungsten Carbide by Gas Sparging Tungstate Melts", Gomes et al., Paper No. A84-84, published 1984, Met. Soc. of AIME. |
Continuations (1)
|
Number |
Date |
Country |
Parent |
299298 |
Jan 1989 |
|