Hornetz, R. et al, J. Mater. Res. 1994, 9(12), pp. 3088-3094. |
Wet and Dry Oxidation of Single Crystal 8-SiC: Kinetics and Interface Characteristics, J. W. Palmour et al., Mat.Res.Soc.Symp.Proc., vol. 54, Materials Research Society, 1986, pp. 553-559. |
High Quality SiO.sub.2 /Si Interfaces of Poly-Crystalline Silicon Thin Film Transistors by Annealing in Wet Atmosphere, N. Sano et al., IEEE Electron Device Letters, vol. 16, No. 3, May 1995, pp. 157-160. |
Electrical Characterization of the Thermally Oxidized SiO.sub.2 /SiC Interface, J. N. Shenoy et al., Inst.Phys.Conf.Ser. No. 141, Chapter 4, pp. 449-455 (Symp.Compound Semicond., San Diego, Sep. 1994). |
International Search Report, PCT/US 96/17344, dated Jan. 14, 1997, by E. Hammel. |
Fundamental Oxidation Studies of Single Crystal SiC, Z. Zheng et al., 1046b Extended Abstracts, Fall Meeting, Hollywood, FL, US 89/2 (1989), pp. 720-721. |
High Frequency Capacitance-Voltage Characteristics of Thermally Grown SiO.sub.2 Films on .beta.-SiC, S. M. Tang et al., J. Electrochem. Soc., vol. 137, No. 1, Jan. 1990, pp. 221-225. |