1. Field of the Invention
The present invention relates to a process for regeneration of a thick layer transferred wafer obtained by forming a laminated body by laminating a semiconductor wafer onto which ions are implanted into a support wafer and by separating from a thin layer of the semiconductor wafer in the ion implanted area by heat treatment of this laminated body and a layer transferred wafer regenerated by this process. The present invention relates more particularly to a process for regeneration of a layer transferred wafer regenerated two times or more in a so-called ion implantation separation method for producing bonded wafers such as SOI (Silicon On Insulator) and a wafer regenerated.
2. Description of the Related Art
As a conventional process for regeneration of a layer transferred wafer, a process for regeneration of a layer transferred wafer has been known in which after an ion implanted layer at least on a chamfered portion of a layer transferred wafer is removed, a main surface of the wafer on the layer-transferred side is polished (See the patent document 1, for example). According to this process for the regeneration, the layer transferred wafer can be used for a support wafer, which is a base wafer, a normal silicon mirror wafer or a semiconductor wafer, which is a bond wafer. And when the layer transferred wafer is to be reused as the support wafer (base wafer) or the semiconductor wafer (bond wafer), if the thickness of the initial semiconductor wafer is set large in advance, it can be reused repeatedly two times or more.
Japanese Unexamined Patent Application No. 2001-155978 (claim 1, Paragraph 0019).
However, the problem is that polishing both surfaces of the layer transferred wafer at each transfer in reusing the layer transferred wafer two times or more has increase the regeneration cost.
An object of the present invention is to provide a process for regeneration of a layer transferred wafer which can reduce the regeneration cost in reusing the layer transferred wafer two times or more and a regenerated layer transferred wafer.
The invention according to claim 1 comprises, as shown in
By the process for regeneration of a layer transferred wafer according to claim 1, the ring-shape steps formed on both the separated surfaces of the wafer can be removed in one time after the semiconductor wafer is separated once on the front and back each, two times in total, to form the first layer transferred wafer and the second layer transferred wafer, and thus the regeneration cost can be reduced.
The invention according to claim 2 is related to claim 1, wherein, as shown in
By the process for regeneration of a layer transferred wafer described in claim 2, the regenerated wafer can be used another two times or more by adjusting a carrier plate for both-surface polishing.
The invention according to claim 3 is related to claim 1, wherein between process (C) and process (D), process (H) comprising polishing the second main surface of the first layer transferred wafer on the side opposite to the separated surface is carried out.
By the process for regeneration of a layer transferred wafer described in claim 3, by removing damage such as chuck marks or the like on the second main surface formed during the production of the first layer transferred wafer by polishing before laminating the first layer transferred wafer on another support wafer, the high-quality SOI wafer can be obtained from the first layer transferred wafer even if the ring-shape step is left on the separated surface.
The invention according to claim 4 is related to claim 3, wherein the polishing in process (H) is carried out by using a wax-less polishing device having polishing surface plates over which polishing cloths are extended and a polishing head opposed to the polishing surface plates having a fixed annular template, by pressing a soft back pad provided within the template onto the separated surface of the first layer transferred wafer and by sliding the second main surface of the first layer transferred wafer in contact with the polishing cloths.
By the process for regeneration of a layer transferred wafer described in claim 4, by polishing the main surface on the side without the ring-shape step of the first layer transferred wafer by the wax-less polishing device, one main surface can be polished uniformly within the surface even if the other main surface (separated surface) has the ring-shape step.
The invention according to claim 5 is related to claim 3 or 4, wherein before the polishing in process (H), a process (I) comprising removing an oxide film formed on at least the second main surface of the first layer transferred wafer is carried out.
By the process for regeneration of a layer transferred wafer described in claim 5, by removing the oxide film on the second main surface of the layer transferred wafer before polishing in process (H), the second main surface can be polished uniformly without leaving any impurities such as particles.
The invention according to claim 6 is related to claim 3 or 4, wherein the polishing in process (H) comprises:
The invention according to claim 7 is related to claim 3 or 4, wherein the polishing in process (H) comprises:
By the process for regeneration of a layer transferred wafer described in claim 6 or 7, damage such as chuck marks on the second main surface can be removed and high flatness of the second main surface can be realized by performing two-stage polishing.
The invention according to claim 8 is the regenerated wafer regenerated by the process in any one of claims 1 to 7.
In the regenerated wafer described in claim 8, since the ring-shape steps formed on both surfaces of the layer transferred wafer are removed at the same time by both-surface polishing, a polishing force is not biased to one of the surfaces at the both-surface polishing, but both the main surfaces are uniform and have high flatness.
Next, the preferred embodiment of the present invention will be described based on the drawings.
As shown in
First, an oxide film 13a (SiO2 film), which is an insulating film, is formed on a first main surface of the wafer 13 by thermal oxidation of the semiconductor wafer 13, and then, hydrogen ions (H+), which are hydrogen gas ion, are implanted in the dose amount of 3.0×1016/cm2 or more or a hydrogen-molecule ion (H2+) in the dose amount of 1.5×1016/cm2 or more into the first main surface of this wafer 13 (
Next, the first main surface of the semiconductor wafer 13 is laminated onto the main surface of the support wafer 14 shown in
Next, the temperature of the laminated body 16 in which the above semiconductor wafer 13 is split in the ion implanted area 13b is lowered, and the first layer transferred wafer 12 is removed from the support wafer 14 onto which the thin layer 17 is laminated through the oxide film 13a (hereinafter referred simply as the support wafer 14). Heat treatment is carried out that the temperature of the above support wafer 14 is raised to the range of 900 to 1200° C. in an atmosphere of oxygen (O2) or nitrogen (N2) and kept in this temperature range for 30 to 120 minutes (
On the other hand, a ring-shape step 12b of about 0.3 μm is formed on an outer circumferential edge of the separated surface 12a of the first layer transferred wafer 12 (
The second main surface 12c of the first layer transferred wafer 12 is polished by a wax-less polishing device for a single wafer 50 shown in
Next, a method for polishing the second main surface 12c of the layer transferred wafer 12 using this polishing device 50 will be described.
The first layer transferred wafer 12 shown in
Two methods for polishing the second main surface 12c of the layer transferred wafer 12 with the polishing cloth 51a of the first polishing surface plate 52a will be described.
[1] First Polishing Method
As shown in
[2] Second Polishing Method
The final polishing cloth is extended over the upper face of the first polishing surface plate 52a, and the nozzle 55a is prepared so as to supply the primary polishing liquid which is coarser than the final polishing liquid. On the other hand, for the polishing cloth of the second polishing surface plate 52b, the same final polishing cloth 51b as in the first polishing method is used, and the nozzle 55b is also prepared to supply the same final polishing liquid as in the first polishing method. After that, as in the first polishing method, the second main surface 12c of the layer transferred wafer 12 is pressed onto the final polishing cloth of the first polishing surface plate 52a to perform the primary polishing while supplying the primary polishing liquid, and then, the second main surface 12c is pressed onto the final polishing cloth of the second polishing surface plate 52b to perform the final polishing while supplying the final polishing liquid.
Here, as the primary polishing cloth, a hard urethane foam pad, a soft non-woven pad obtained by impregnating/hardening the non-woven cloth with urethane resin or the like is adopted, while as the final polishing cloth, a suede pad obtained by foaming urethane resin on a base cloth made of a non-woven cloth or the like is adopted. As the primary polishing liquid, slurry including loose grains made of sintered silica with the average grain diameter of about 0.02 to 0.1 μm or colloidal silica (silica sol) in an alkaline solution and amine, which is a processing accelerator, is adopted. As the final polishing liquid, slurry including loose grains with the average grain diameter of about 0.02 to 0.1 μm in an alkaline solution as well as an organic polymer, which is a haze inhibitor, is adopted.
Though the second main surface 12c of the first layer transferred wafer 12 is damaged by a chuck or the like, the damage such as chuck marks on the second main surface 12c can be removed and the high flatness of the second main surface 12c can be realized by polishing the second main surface 12c of the first layer transferred wafer 12 in two stages based on the above first or the second polishing method.
Next, similarly to the method described using
On the other hand, the second layer transferred wafer 22 has, in addition to the ring-shape step 12b formed previously on the outer circumferential edge of its separated surface 12a, a ring-shape step 22b of about 0.3 μm is formed on the outer circumferential edge of a new separated surface 12a by the above heat treatment (FIG. 1(m)). On the chamfered portion of the circumferential edge of the separated surface 22a and the separated surface 12a of the layer transferred wafer 22, the oxide film formed by heat treatment or the like remains. It is preferable that these oxide films are removed by dipping the second layer transferred wafer 22 in fluorinated acid or the like as shown in
The second layer transferred wafer 22 shown in
As mentioned above, according to the present invention, when a layer transferred wafer is to be reused two times or more the separated surface of the first layer transferred wafer obtained at the first manufacture of the SOI wafer and the opposite surface thereof are laminated on another support wafer at the second manufacture of the SOI wafer and the second layer transferred wafer obtained by separation at this time is subjected to both-surface polishing so that the ring-shape steps formed on both the separated surfaces of the second layer transferred wafer can be removed at the same time, which can reduce the regeneration cost.
By adjusting a carrier plate of the both-surface polishing, the regenerated wafer can be reused another two times or more.
Also, by reducing damage on the second main surface formed during the manufacture of the first layer transferred wafer by polishing before laminating the first layer transferred wafer on another support wafer, a high-quality SOI wafer can be obtained from this layer transferred wafer even if the ring-shape step is left on this separated surface.
Also, by polishing one of the second main surface, on which the ring-shape step of the first layer transferred wafer is removed by the wax-less polishing device, the second main surface can be polished uniformly in the surface even if the other main surface (separated surface) has the ring-shape step.
Moreover, by removing the oxide film on the second main surface of the first layer transferred wafer before wax-less polishing, a uniform polishing is made possible without impurities such as particles remaining on the second main surface.
Furthermore, by performing the wax-less polishing in two stages of the primary polishing and the final polishing, the damage such as chuck marks on the second main surface can be removed and the second main surface can have a high flatness.
Additionally, since the wafer regenerated in the present invention has the ring-shape steps formed on both surfaces of the second layer transferred wafer removed by both-surface polishing at the same time, the polishing force is not biased to one face at the both-surface polishing and both the main surfaces have uniform and high flatness, respectively.
Number | Date | Country | |
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60753038 | Dec 2005 | US |