Claims
- 1. A process for producing an optical structure comprising a silicon-based coating on an optical polymeric substrate, comprising the following consecutive steps:
- (a) plasma-activating a surface of the substrate with plasma based upon a gaseous mixture containing argon to form an activated surface;
- (b) depositing a first layer of SiO.sub.2 onto the activated surface by a plasma enhanced chemical vapor deposition technique from silane and oxygen to form a first layer having a thickness of from about 2 to 5 microns;
- (c) coating said first layer by a plasma enhanced chemical vapor deposition technique while the substrate is subjected to radio-frequency biasing with a second layer formed of a silicon nitride.
- 2. The process for producing an optical structure comprising a silicon-based coating on an optical polymeric substrate, comprising the following consecutive steps:
- (a) plasma-activating a surface of the substrate with a plasma based upon a gaseous mixture containing argon to form a plasma-activated surface;
- (b) depositing a first layer of SiO.sub.2 onto the activated surface by plasma enhanced chemical vapor deposition from silane and oxygen to form a first layer having a thickness of from 2 to 5 microns;
- (c) coating said first layer by plasma enhanced chemical vapor deposition with a second layer, said second layer comprising a complex having a composition intermediate between SiO.sub.2 and Si.sub.3 N.sub.4 with a minimum of Si--Si bonds while the substrate is subjected to radio-frequency biasing.
- 3. The process according to claim 1 wherein the nitride compound of silicon contains silicon, hydrogen and nitrogen.
- 4. The process according to claim 1 wherein said second layer has a thickness of from 2 to 50 microns.
- 5. The process according to claim 1 further comprising depositing onto the activated surface a silicon-based under-layer by plasma enhanced chemical vapor deposition from silane.
- 6. The process according to claim 2 further comprising depositing onto said activated surface a silicon-based under-layer by plasma enhanced vapor chemical vapor deposition from silane.
- 7. The process according to claim 5 wherein at least one optical layer is deposited between said under-layer and said first layer.
- 8. The process according to claim 6 wherein at least one optical layer is deposited between said under-layer and said first layer.
- 9. The process according to claim 5 wherein the intermediate layer has a thickness of from 100 to 200 Angstroms.
- 10. The process according to claim 6 wherein said intermediate layer has a thickness of from 100 to 200 Angstroms.
- 11. The process according to claim 1 wherein the plasma activation of the surface is effected with a plasma selected from the group consisting of Ar/O.sub.2 plasma and successive Ar and Ar+NH.sub.3 plasmas.
- 12. The process according to claim 2 wherein the plasma activation of the surface is effected with a plasma selected from the group consisting of Ar/O.sub.2 plasma and successive Ar and Ar+NH.sub.3 plasmas.
- 13. The process according to claim 2 wherein the radio-frequency biasing of the substrate is performed so as to adjust the compressive stress of the layer at room temperature.
- 14. In a process for producing an optical structure comprising a silicon-based coating on an optical polymeric substrate comprising plasma-activating a surface of the substrate, depositing a first layer of SiO.sub.2 onto the activated structure by plasma enhanced chemical vapor deposition technique from silane and oxygen to form a first layer;
- the improvement comprising coating said first layer by a plasma enhanced chemical vapor deposition technique with a second layer formed from a silicon nitride compound while the substrate is subjected to radio-frequency biasing.
- 15. In a process for producing an optical structure comprising a silicon-based coating on an optical polymeric substrate comprising plasma-activating a surface of the substrate, depositing a first layer of SiO.sub.2 onto the activated structure by plasma enhanced chemical vapor deposition technique from silane and oxygen to form a first layer;
- the improvement comprising coating said first layer by a plasma enhanced chemical vapor deposition technique with a second layer of a complex of a composition which is intermediate between SiO.sub.2 and Si.sub.3 N.sub.4 with a minimum number of Si--Si bonds while the substrate is subjected to radio-frequency biasing.
Priority Claims (1)
Number |
Date |
Country |
Kind |
91 07140 |
Jun 1991 |
FRX |
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Parent Case Info
This application is a continuation-in-part, of application Ser. No. 07/897,625, filed Jun. 12, 1992, now abandoned.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4927704 |
Reed et al. |
May 1990 |
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5093152 |
Bonet et al. |
Mar 1992 |
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Foreign Referenced Citations (3)
Number |
Date |
Country |
0254205 |
Jul 1986 |
EPX |
0291113 |
Nov 1988 |
EPX |
8808439 |
Nov 1988 |
WOX |
Continuation in Parts (1)
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Number |
Date |
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Parent |
897625 |
Jun 1992 |
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