Claims
- 1. A process for the preparation of silane polysulfides comprising:
- (a) contacting hydrogen sulfide gas with an active metal alkoxide solution, and
- (b) reacting elemental sulfur and a halohydrocarbylalkoxysilane of the formula Q--R--X with the product of step (a)
- in which Q is ##STR2## and in which R.sup.1 is an alkyl group of 1 to 4 carbon atoms or phenyl, and
- R.sup.2 is an alkoxy group with 1 to 8, preferably 1 to 4, carbon atoms,
- a cycloalkoxy group including 5 to 8 carbon atoms, or a straight or branched chain alkylmercapto group with 1 to 8 carbon atoms,
- wherein the various R.sup.1 and R.sup.2 groups can be the same or different,
- R is a divalent hydrocarbyl group including 1 to 18 carbon atoms, and
- X is a halogen,
- to produce a compound of of the formula Q--R--S.sub.n --R--Q
- in which Q and R are as defined above, and n is an integer of from 2 to 9.
- 2. A process according to claim 1 wherein the product is purified to remove salt and solvent.
- 3. A process according to claim 1 wherein the products of the last reaction step are methoxy derivatives, and said methoxysilane derivatives are converted to silane derivatives containing higher alkoxy groups.
- 4. A process according to claim 1 wherein Q is ##STR3##
- 5. A process according to claim 1 wherein R.sup.2 is ethoxy.
- 6. A process according to claim 1 wherein n is within the range of from 3 to 5.
- 7. A process according to claim 1 wherein the active metal alkoxide is sodium ethoxylate.
- 8. A process according to claim 1 wherein the halogen is chlorine.
- 9. A process according to claim 1 wherein R is 1,3-propylene.
- 10. A process for the preparation of (C.sub.2 H.sub.5 O).sub.3 Si(CH.sub.2).sub.3 --S.sub.4 --(CH.sub.2).sub.3 Si(OC.sub.2 H.sub.5).sub.3, comprising:
- (a) contacting an ethanol solution of sodium ethoxylate with hydrogen sulfide gas to produce a solution of Na.sub.2 S, and
- (b) adding the solution of Na.sub.2 S to an elemental sulfur and Cl(CH.sub.2).sub.3 Si(C.sub.2 H.sub.5 O).sub.3 slurry and reacting to completion.
- 11. A process according to claim 10 wherein the elemental sulfur and Cl(CH.sub.2).sub.3 Si(C.sub.2 H.sub.5 O).sub.3 slurry is formed by heating sulfur with Cl(CH.sub.2).sub.3 Si(C.sub.2 H.sub.5 O).sub.3.
- 12. A process according to claim 10 wherein sodium ethoxylate is formed by reacting sodium with ethanol.
- 13. A process according to claim 10 wherein salts formed in the reaction are filtered off and the solvents stipped off after the reaction is completed.
- 14. A process for the preparation of (C.sub.2 H.sub.5 O).sub.3 Si(CH.sub.2).sub.3 --S.sub.4 --(CH.sub.2).sub.3 Si(OC.sub.2 H.sub.5).sub.3, comprising reacting sodium ethoxylate with hydrogen sulfide gas to yield a product and then reacting said product with a slurried mixture of elemental sulfur and Cl(CH.sub.2).sub.3 Si(C.sub.2 H.sub.5 O).sub.3.
RELATED APPLICATION DATA
This application is a continuation-in-part of U.S. application Ser. No. 08/314,204, filed Sep. 28, 1994, which is incorporated herein in its entirety by reference.
US Referenced Citations (9)
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
314204 |
Sep 1994 |
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