Claims
- 1. A process for the preparation of crystalline 7-[D-.alpha.-amino-.alpha.-(p-hydroxyphenyl)acetamido]-3-methyl-3-cephem-4-carboxylic acid monohydrate exhibiting essentially the following x-ray diffraction properties:
- ______________________________________Line Spacing d(A) Relative Intensity______________________________________1 8.84 1002 7.88 403 7.27 424 6.89 155 6.08 706 5.56 57 5.35 638 4.98 389 4.73 2610 4.43 1811 4.10 6112 3.95 513 3.79 7014 3.66 515 3.55 1216 3.45 7417 3.30 1118 3.18 1419 3.09 1620 3.03 2921 2.93 822 2.85 2623 2.76 1924 2.67 925 2.59 2826 2.51 1227 2.46 1328 2.41 229 2.35 1230 2.30 231 2.20 1532 2.17 1133 2.12 734 2.05 435 1.99 436 1.95 1437 1.90 10______________________________________
- which process comprises
- (a) silylating 7-aminodesacetoxycephalosporanic acid in an inert substantially anhydrous aprotic solvent;
- (b) acylating the so-produced silylated 7-aminodesacetoxycephalosporanic acid with D(-)-.alpha.-amino-.alpha.-(p-hydroxyphenyl)acetyl chloride hydrochloride in an inert substantially anhydrous aprotic solvent in the presence of an acid acceptor;
- (c) cleaving any silyl groups of the acylation product by hydrolysis or alcoholysis; and
- (d) forming the desired monohydrate product by upwardly adjusting the pH of the solution from step (c) to form 7-[D-.alpha.-amino-.alpha.-(p-hydroxyphenyl)acetamido]-3-methyl-3-cephem-4-carboxylic acid and contacting said acid with water or a partially aqueous medium to effect crystallization of the desired monohydrate.
- 2. A process as claimed in claim 1 wherein the silylation step (a) is accomplished by reacting 7-aminodesacetoxycephalosporanic acid with a silylating agent selected from those of the formulae ##STR8## wherein R.sup.2, R.sup.3 and R.sup.4 are hydrogen, halogen, (lower)alkyl, halo(lower)alkyl, phenyl, benzyl, tolyl or dimethylaminophenyl, at least one of the said R.sup.2, R.sup.3 and R.sup.4 groups being other than halogen or hydrogen; R.sup.1 is (lower)alkyl; m is an integer of 1 to 2 and X is halogen or ##STR9## wherein R.sup.5 is hydrogen or (lower)alkyl and R.sup.6 is (lower)alkyl or ##STR10## wherein R.sup.2, R.sup.3 and R.sup.4 are as defined above.
- 3. A process as claimed in claim 2 wherein the silylating agent in step (a) is trimethylchlorosilane or hexamethyldisilazane.
- 4. A process as claimed in claim 1 wherein disilylated 7-aminodesacetoxycephalosporanic acid is produced in step (a) by using at least two equivalents of silylating agent per mole of 7-aminodesacetoxycephalosporanic acid.
- 5. A process as claimed in claim 1 wherein step (a) is carried out by silylating 7-aminodesacetoxycephalosporanic acid with trimethylchlorosilane in a substantially anhydrous aprotic solvent in the presence of an acid acceptor.
- 6. A process as claimed in claim 5 wherein the silylation step is carried out in a substantially anhydrous methylene chloride solvent system in the presence of an acid acceptor comprising triethylamine or a mixture of triethylamine and dimethylaniline at a temperature of about 20.degree.-30.degree. C.
- 7. A process as claimed in claim 1 wherein step (a) is carried out by silylating 7-aminodesacetoxycephalosporanic acid with hexamethyldisilazane in a substantially anhydrous aprotic solvent with external heating.
- 8. A process as claimed in claim 7 wherein the silylation step is carried out in a substantially anhydrous methylene chloride solvent at reflux temperature.
- 9. A process as claimed in claim 1 wherein acylation step (b) is carried out in a substantially anhydrous methylene chloride solvent system at a temperature in the range of from about -10.degree. C. to +10.degree. C. in the presence of an acid acceptor selected from a tertiary amine base having a pK.sub.a .ltoreq.7.
- 10. A process as claimed in claim 9 wherein the acid acceptor is dimethylaniline.
- 11. A process as claimed in claim 1 wherein in step (c) silyl groups are cleaved by treatment with water or a C.sub.1 -C.sub.4 alkanol, or a mixture thereof.
- 12. A process as claimed in claim 1 wherein in step (c) silyl groups are cleaved by treatment with a C.sub.1 -C.sub.4 alkanol.
- 13. A process as claimed in claim 1 wherein step (d) comprises
- (1) upwardly adjusting the pH of the solution from step (c) by addition of triethylamine to form 7-[D-.alpha.-amino-.alpha.-(p-hydroxyphenyl)acetamido]-3-methyl-3-cephem-4-carboxylic acid; and
- (2) contacting said cephalosporanic acid with a solvent system comprising water or a mixture of water with one or more organic solvents selected from acetonitrile, acetone or a C.sub.1 -C.sub.5 alkanol until the desired monohydrate crystallizes from solution; and
- (3) recovering the desired monohydrate.
- 14. A process as claimed in claim 13 wherein the monohydrate crystallization step (2) is carried out at a temperature of from about 35.degree.-60.degree. C.
- 15. A process as claimed in claim 13 wherein the crystallization solvent system of step (2) comprises water:acetonitrile:n-butanol in a v/v ratio of 1:2:1.
- 16. A process as claimed in claim 13 wherein the crystallization solvent system of step (2) comprises water:acetone (1:3) (v/v), water:isopropanol (1:3) (v/v), water:acetonitrile (1:3) (v/v) or water:n-butanol (1:1) (v/v).
- 17. A process as claimed in claim 13 wherein seed crystals of the desired 7-[D-.alpha.-amino-.alpha.-(p-hydroxyphenyl)acetamido]-3-methyl-3-cephem-4-carboxylic acid monohydrate are added during the final crystallization step.
Priority Claims (1)
Number |
Date |
Country |
Kind |
17028/76 |
Apr 1976 |
GBX |
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CROSS-REFERENCE TO RELATED APPLICATION
This is a division of co-pending application Ser. No. 874,457, filed Feb. 2, 1978, now U.S. Pat. No. 4,160,863, which is a division of Ser. No. 785,392, filed Apr. 7, 1977, and now abandoned.
US Referenced Citations (5)
Foreign Referenced Citations (2)
Number |
Date |
Country |
829758 |
Jun 1974 |
BEX |
1240687 |
Jul 1971 |
GBX |
Non-Patent Literature Citations (2)
Entry |
Dunn et al. T. Antibiotics 24, 65-80 (1976). |
Marconi et al. Chem Abs. 83, 145764a (1975). |
Divisions (2)
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Number |
Date |
Country |
Parent |
874457 |
Feb 1978 |
|
Parent |
785392 |
Apr 1977 |
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