PROCESS FOR THE PURIFICATION OF A LIQUID-CRYSTAL MIXTURE

The invention relates to a process for the purification of a liquid-crystal mixture.

Liquid-crystal mixtures are fluid substances having crystal-like direction-dependent physical properties which are used, for example, in liquid-crystal displays. Commercially available liquid-crystal mixtures which can advantageously be employed in displays have various components which are mixed with one another in a pre-specified ratio to one another. The properties and advantages of the liquid-crystal mixture that are necessary for the respective application can be achieved specifically by suitable specification of individual components and mixing proportions.

It has been found that even slight contamination of a liquid-crystal mixture can result in the properties of the liquid-crystal mixture that are necessary or desired for the intended application being impaired and economically viable use of a pre-specified liquid-crystal mixture for a particular application being made more difficult or even impossible.

Various purification processes by means of which a liquid-crystal mixture can be purified have therefore been disclosed in practice. The various purification processes are based on different methods. In industrial production and processing processes, mechanical filter processes or the addition and subsequent separation of a sorbent represent purification processes which are frequently employed.

The purification processes known from practice often have only low efficiency for the purification of liquid-crystal mixtures and are nevertheless comparatively expensive.

It is therefore regarded as an object of the present invention to design a process for the purification of a liquid-crystal mixture in such a way that the most efficient purification possible of the liquid-crystal mixture can be carried out as inexpensively and reliably as possible.

This object is achieved in accordance with the invention by a purification process in which the liquid-crystal mixture is passed through a first electrodialysis cell, a concentrate solution is passed through a second electrodialysis cell which is adjacent to the first electrodialysis cell and is separated by an ion-exchanger membrane, and, with the aid of an anode/cathode arrangement arranged outside the electrodialysis cells, an electric field transverse to a direction of passage of the liquid-crystal mixture through the first electrodialysis cell is generated so that ionised constituents of the liquid-crystal mixture are discharged from the first electrodialysis cell and are removed from the liquid-crystal mixture. The process according to the invention consequently essentially corresponds to the performance of electrodialysis on the liquid-crystal mixture. It has been found that many impurities relevant in practice can be separated and removed from the liquid-crystal mixture using electrodialysis. Ionised impurities can be removed reliably and with high effectiveness from the liquid-crystal mixture by suitable pre-specification of the concentrate solution and the ion-exchanger membrane delimiting the first electrodialysis cell.

The process according to the invention can be carried out in continuous operation and enables continuous sampling and control of the purification process, so that, depending on the respective liquid-crystal mixture, the contamination thereof and a target degree of purity of the liquid-crystal mixture to be purified, a suitable process duration can be determined and the purification already achieved can be monitored and if necessary regulated while the purification process is being carried out.

According to an advantageous embodiment of the inventive idea, it is provided that the liquid-crystal mixture is passed through the first electrodialysis cell a number of times. It is likewise possible for the liquid-crystal mixture to be passed successively through a plurality of electrodialysis cells having an arrangement, comparable to the first electrodialysis cell, of an ion-exchanger membrane and an adjacent second electrodialysis cell and a comparable electric field. In both cases, it is thereby possible to achieve the situation where a rate of passage of the liquid-crystal mixture and a total purification duration or a total residence time of the liquid-crystal mixture in the first electrodialysis cell or in a comparable electrodialysis cell arrangement can be pre-specified independently of one another. Thus, for example, it is possible, in the case of an impurity which can be removed highly efficiently, for the process duration to be adapted and kept short. If, by contrast, it is observed that the impurity in the liquid-crystal mixture can only be separated and removed from the liquid-crystal mixture comparatively slowly, the purification process can be carried out for a sufficiently long time in order to achieve and reliably guarantee a pre-specified purification effect. Sampling at time intervals or continuously enables the purification effect that has already been achieved to be determined and controlled. Accordingly, the purification process according to the invention also enables regulated purification of a liquid-crystal mixture, so that it can be ensured that a target or necessarily pre-specified degree of purity is also achieved with the purification according to the invention.

According to an embodiment of the inventive idea, it is provided that the liquid-crystal mixture is passed through the first electrodialysis cell over a period of more than one hour, preferably more than 4 hours. If the liquid-crystal mixture is passed successively through a plurality of comparable electrodialysis cells, it may likewise be provided that the total residence time of the liquid-crystal mixture in these electrodialysis cells is more than one hour and preferably more than four hours. It has been found that the specific resistance, which can be regarded as an expedient criterion for the purity of the liquid-crystal mixture, can be increased by more than a factor of 20, depending on the process duration over a period of about 4 hours to 8 hours.

It has proven advantageous for the concentrate solution used to be deionised water. In addition to comparatively effective charge transport in deionised water, the concentration gradient favours osmosis through the ion-exchanger membrane, which results in an additional purifying effect.

However, it is likewise possible and possibly advantageous, depending on the composition of the liquid-crystal mixture, for the concentrate solution used also to be other suitable solutions, such as, for example, transformer oil, dodecane or another organic solvent.

Investigations have shown that a large potential difference and consequently a large electric field transverse to a flow direction of the liquid-crystal mixture through the first electrodialysis cell is particularly advantageous for an effective purification effect. According to an embodiment of the inventive idea, it is therefore provided that the ion-exchanger membrane used is a membrane having a breakdown voltage of greater than 10 volts, preferably greater than 80 volts and particularly preferably 400 volts or more, and an electric potential difference which effects the greatest possible drop in voltage at the ion-exchanger membrane, but which is below the breakdown voltage, is pre-specified with the aid of the anode/cathode arrangement. The breakdown voltage denotes the voltage from which the membrane no longer reliably acts as insulator and current flow through the membrane could impair the electrodialysis. A drop in voltage between 10 and 1000 volts within the first electrodialysis cell is regarded as suitable for carrying out the purification process. The drop in voltage in the first electrodialysis cell should preferably be in a range between 80 volts and 120 volts, which has proven particularly advantageous for the purification process.

In order to prevent water or other mixture components being destroyed at the electrodes, it is, in accordance with an advantageous embodiment of the inventive idea, provided that the anode and cathode are flushed with transformer oil while the process is being carried out. The accessible active surfaces of the anode and cathode can be flushed with the transformer oil continuously or at time intervals. The electrode material used for the anode and for the cathode can preferably be stainless steel, but also graphite, mixed oxides or other suitable electrode materials.

In order to prevent residues of the purified liquid-crystal mixture remaining adhering and being retained in the first electrodialysis cell after a purification operation, it is provided that if possible all surfaces coming into contact with the liquid-crystal mixture to be purified are made, for example, from perfluoroalkoxy polymers (PFA) or are coated therewith. It is likewise possible for the components which come into contact with product, such as, for example, the electrodialysis cell, but also tubes, ion-exchanger membranes or spacer elements in an electrodialysis cell to be made from an inert polymer, such as, for example, polytetrafluoroethylene (PTFE). The components which come into contact with product are advantageously cleaned with organic solvents, such as, for example, acetone or toluene, before beginning a new purification process.

In order to prevent undesired pressure variations in the first electrodialysis cell while the purification process is being carried out, which may favour or cause leakage between adjacent electrodialysis cells, low-pulsation pumps are used to convey the liquid-crystal mixture and the concentrate solution. It has been found that, for example, the use of gear pumps enables the liquid-crystal mixture to be conveyed with very constant pressure and considerably reduces or entirely prevents undesired effects, such as, for example, leakage or a reduced purification effect.

In order to achieve the most effective purification possible of the liquid-crystal mixture within the shortest possible time, it is provided that the liquid-crystal mixture is thoroughly mixed and homogenised before introduction into the first electrodialysis cell.

A device by means of which the process according to the invention can be carried out has a first electrodialysis cell having a supply line and a discharge line, enabling a liquid-crystal mixture to be passed through the first electrodialysis cell in a direction of passage, and a second electrodialysis cell having a supply line and a discharge line, which is adjacent to the first electrodialysis cell and is separated by a suitable ion-exchanger membrane, enabling a concentrate solution to be passed through the second electrodialysis cell. The first electrodialysis cell and the second electrodialysis cell are arranged between an anode/cathode arrangement in such a way that an electric field transverse to the direction of passage of the liquid-crystal mixture in the first electrodialysis cell can be generated by means of the anode/cathode arrangement.

The anode and the cathode are separated from the first electrodialysis cell and from the second electrodialysis cell in each case by an ion-exchanger membrane, which exchanges dissolved ions having a charge which has an opposite charge sign to the dissolved ions exchanged by the ion-exchanger membrane between the first electrodialysis cell and the second electrodialysis cell. For example, if a cation-exchanger membrane is located between the first electrodialysis cell and the second electrodialysis cell, the anode and the cathode are separated from the first and second electrodialysis cells by anion-exchanger membranes.

The ion-exchanger membranes can preferably have a heterogeneous design and contain ion-exchanger particles embedded in a base polymer, or alternatively can have a homogeneous design and consist of an ionic polymer. The electrode material used is preferably stainless steel, but also graphite or a suitable mixed oxide.

Spacing devices, which are known as spacers and also serve for effective fluid distribution within the electrodialysis cells, are arranged between the respectively adjacent ion-exchanger membranes. The spacers are made from an inert plastic material or plastic-material mixture, such as, for example, polyethylene, polyethylene and polyamide, or from polyvinyl chloride and polyethylene terephthalate. A typical thickness of suitable spacers is between 0.3 mm and 1.5 mm, preferably about 0.5 mm.

Low-pulsation and as far as possible constant-pressure pumps, such as, for example, gear pumps, are advantageously used for conveying the liquid-crystal mixture and the concentrate solution.

All components which come into contact with the liquid-crystal mixture, such as, for example, the electrodialysis cells, the ion-exchanger membranes, the spacers and the tubes used for the supply lines and discharge lines, are preferably made from an inert polymer or provided with a corresponding coating. A suitable inert polymer is, for example, PFA or PTFE.

Illustrative embodiments of the inventive idea are explained in greater detail below and are depicted in the drawing, in which:

FIG. 1 shows a diagrammatic representation of a purification process according to the invention which is carried out with the aid of a suitable electrodialysis device, and

FIG. 2 shows a diagrammatic representation of a change in a specific resistance of a liquid-crystal mixture over time over the duration of performance of the purification process.

A purification device 1, depicted by way of example in FIG. 1, by means of which the process according to the invention for the purification of a liquid-crystal mixture can be carried out has a first electrodialysis cell 2 having a supply line 3 and a discharge line 4, which are connected to a liquid-crystal mixture reservoir 5. With the aid of a gear pump 6, an amount of fluid of a liquid-crystal mixture 7 can be conveyed out of the liquid-crystal mixture reservoir 5, through the first electrodialysis cell 2 and back into the liquid-crystal mixture reservoir 5, so that a circuit is produced and the liquid-crystal mixture 7 is passed continuously through the first electrodialysis cell 2. In the representation in accordance with FIG. 1, the liquid-crystal mixture 7 flows through the first electrodialysis cell 2 in a direction of passage running from top to bottom.

A second electrodialysis cell 8, which is adjacent to the first electrodialysis cell 2, is separated from the first electrodialysis cell 2 by a suitable anion-exchanger membrane 9. The second electrodialysis cell 8 likewise has a supply line 10 and a discharge line 11, which are connected to a concentrate-solution reservoir 12, so that a concentrate solution 14 can be passed through the second electrodialysis cell 8 with the aid of a gear pump 13. The concentrate solution 14 used is deionised water.

The first electrodialysis cell 2 and the second electrodialysis cell 8 are arranged between an anode 15 and a cathode 16 in such a way that an electric field transverse to the direction of passage of the liquid-crystal mixture 7 in the first electrodialysis cell 2 can be generated by means of this anode/cathode arrangement.

The anode 15 and the cathode 16 are separated from the first electrodialysis cell 2 and from the second electrodialysis cell 8 in each case by a cation-exchanger membrane 17 and can be flushed continuously or on demand with transformer oil 19 with the aid of a transformer-oil circuit 18.

All components which come into contact with the liquid-crystal mixture 7, such as, for example, the electrodialysis cells 2 and 8, the ion-exchanger membranes 9 and 17, the spacers and the tubes used for the supply lines 3 and 10 and the discharge lines 4 and 11, are made from an inert polymer or provided with a corresponding coating. A suitable inert polymer is, for example, PFA or PTFE.

In order to carry out the purification process, a potential difference of, for example, 80 volts or 120 volts is generated between the anode 15 and the cathode 16 with the aid of a direct-voltage source. The gear pumps 6 and 13 are started and effect uniform passage of the liquid-crystal mixture 7 through the first electrodialysis cell 2 and of the concentrate solution 14 through the second electrodialysis cell 8. While the liquid-crystal mixture 7 flows through the first electrodialysis cell 2, ionised impurities are diverted by the electric field either in the direction of the second electrodialysis cell 8 at the anion-exchanger membrane 9, or, in the case of an opposite charge sign of the ionised impurity, in the direction of the cathode 16 at the cation-exchanger membrane 17 and are thereby removed from the liquid-crystal mixture 7 flowing through.

The liquid-crystal mixture can be passed through the first electrodialysis cell 2 over a sufficiently long period. While the purification process is being carried out, samples can be taken continuously or at time intervals in order to determine and monitor the purification of the liquid-crystal mixture 7 that has already been achieved.

FIG. 2 depicts diagrammatically a specific resistance ρ in the unit ohm×cm determined while the purification process for a liquid-crystal mixture 7 is being carried out, as a function of the purification duration t in the unit hours. The specific resistance ρ is a measure of the proportion of dissolved ions in the liquid-crystal mixture 7 and thus at least indirectly a measure of the proportion of ionised impurities present in the liquid-crystal mixture 7. The greater the specific resistance p, the smaller the proportion of ionised impurities and the higher the purity of the liquid-crystal mixture 7. It has been found that the specific resistance ρ of a typical liquid-crystal mixture 7 increases by about a factor of 10 after only one hour and by about a factor of 40 after about four hours.

The purification process according to the invention can be carried out using standard laboratory electrodialysis devices and merely requires continuous operation of the gear pumps. Correspondingly, the purification process can be carried out using simple equipment and inexpensively and facilitates very efficient purification of the liquid-crystal mixture 7. The efficiency can be increased further by additionally carrying out further purification processes based on other methods beforehand.

The purification process described above is particularly suitable for liquid-crystal mixtures comprising at least two organic substances, preferably mesogenic, in particular liquid-crystalline substances, where the organic substances are preferably selected from the compounds of the general formula I,

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in which

R¹and R²each, independently of one another, denote H, an alkyl radical having up to 15 C atoms which is unsubstituted, monosubstituted by CN or CF₃or at least monosubstituted by halogen, where, in addition, one or more CH₂groups in these radicals may be replaced by —O—, —S—,

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—C≡C—, —CH═CH—, —CF₂O—, —OCF₂—, —OC—O— or —O—CO— in such a way that O atoms are not linked directly to one another, and one of the radicals R¹and R²also denotes F, Cl, CN, SF₅, NCS, SCN, OCN,

rings A, B, C, D and E each, independently of one another, denote

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r, s and t each, independently of one another, denote 0, 1, 2 or 3, where r+s+t≦3,

Z^1-4each, independently of one another, denote —CO—O—, —O—CO—, —CF₂O—, —OCF₂—, —CH₂O—, —OCH₂—, —CH₂CH₂—, —(CH₂)₄—, —CH═CH—CH₂O, —C₂F₄—, —CH₂CF₂—, —CF₂CH₂—, —CF═CF—, —CH═CF—, —CF═CH—, —CH═CH—, —C≡C— or a single bond, and

L¹and L²each, independently of one another, denote H or F.

In the case where r+s+t=0, Z¹and Z⁴are preferably selected in such a way that, if they do not denote a single bond, they are not linked to one another via two 0 atoms.

The liquid-crystal mixtures employed comprising the individual mesogenic substances may additionally also comprise one or more polymerisable compounds, so-called reactive mesogens (RMs), for example as disclosed in U.S. Pat. No. 6,861,107, in concentrations of, preferably, 0.1-5% by weight, particularly preferably 0.2-2% by weight, based on the mixture. Mixtures of this type can be used for so-called polymer stabilised VA (PS-VA) modes, negative IPS (PS-IPS) or negative FFS (PS-FFS) modes, in which polymerisation of the reactive mesogens is intended to take place in the liquid-crystalline mixture. The prerequisite for this is that the liquid-crystal mixture does not itself comprise any individual polymerisable substances.

The prerequisite for this is that the liquid-crystal mixture itself does not comprise any polymerisable components which likewise polymerise under the conditions where the compounds of the formula M polymerise.

The polymerisation is preferably carried out under the following conditions:

The polymerisable components are polymerised in a cell using a UV-A lamp of defined intensity for a defined period and applied voltage (typically 10 V to 30 V alternating voltage, frequencies in the range from 60 Hz-1 kHz). The UV-A light source employed is typically a metal-halide vapour lamp or high-pressure mercury lamp having an intensity of 50 mW/cm². These are conditions where, for example, liquid-crystalline compounds containing an alkenyl or alkenyloxy side chain, such as, for example, the compound of the formula

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do not polymerise.

The polymerisable mesogenic or liquid-crystalline compounds, also known as “reactive mesogens” (RMs), are preferably selected from the compounds of the formula II

R^a-A¹-(Z¹-A²)_m-R^b II

in which the individual radicals have the following meanings:

A¹and A²each, independently of one another, denote an aromatic, heteroaromatic, alicyclic or heterocyclic group, preferably having 4 to 25 C atoms, which may also contain fused rings and which is optionally mono- or polysubstituted by L,
Z¹on each occurrence, identically or differently, denotes —O—, —S—, —CO—, —CO—O—, —OCO—, —O—CO—O—, —OCH₂—, —CH₂O—, —SCH₂—, —CH₂S—, —CF₂O—, —OCF₂—, —CF₂S—, —SCF₂—, —(CH₂)_n—, —CF₂CH₂—, —CH₂CF₂—, —(CF₂)_n—, —CH═CH—, —CF═CF—, —C≡C—, —CH═CH—COO—, —OCO—CH═CH—, CR⁰R⁰⁰or a single bond,
L, R^aand R^beach, independently of one another, denote H, halogen, SF₅,

NO₂, a carbon group or hydrocarbon group, where the compounds contain at least one radical L, R^aand R^bwhich denotes or contains a P-Sp-group,

R⁰and R⁰⁰each, independently of one another, denote H or alkyl having 1 to 12 C atoms,
P denotes a polymerisable group,
Sp denotes a spacer group or a single bond,
m denotes 0, 1, 2, 3 or 4,
n denotes 1, 2, 3 or 4.

The polymerisable compounds may contain one polymerisable group (monoreactive) or two or more (di- or multireactive), preferably two, polymerisable groups.

Above and below, the following meanings apply:

The term “mesogenic group” is known to the person skilled in the art and is described in the literature, and denotes a group which, due to the anisotropy of its attracting and repelling interactions, essentially contributes to causing a liquid-crystal (LC) phase in low-molecular-weight or polymeric substances. Compounds containing mesogenic groups (mesogenic compounds) do not necessarily have to have an LC phase themselves. It is also possible for mesogenic compounds to exhibit LC phase behaviour only after mixing with other compounds and/or after polymerisation. Typical mesogenic groups are, for example, rigid rod- or disc-shaped units. An overview of the terms and definitions used in connection with mesogenic or LC compounds is given in Pure Appl. Chem. 73(5), 888 (2001) and C. Tschierske, G. Pelzl, S. Diele, Angew. Chem. 2004, 116, 6340-6368.

The term “spacer group”, also referred to as “Sp” above and below, is known to the person skilled in the art and is described in the literature, see, for example, Pure Appl. Chem. 73(5), 888 (2001) and C. Tschierske, G. Pelzl, S. Diele, Angew. Chem. 2004, 116, 6340-6368. Unless indicated otherwise, the term “spacer group” or “spacer” above and below denotes a flexible group which connects the mesogenic group and the polymerisable group(s) in a polymerisable mesogenic compound (“RM”) to one another. Sp preferably denotes a single bond or a 1-16 C alkylene, in which one or more CH₂groups may be replaced by —O—, —CO—, —COO— or —OCO— in such a way that two 0 atoms are not connected directly to one another.

The term “organic group” denotes a carbon or hydrocarbon group.

The term “carbon group” denotes a mono- or polyvalent organic group containing at least one carbon atom which either contains no further atoms (such as, for example, —C≡C—) or optionally contains one or more further atoms, such as, for example, N, O, S, P, Si, Se, As, Te or Ge (for example carbonyl, etc.). The term “hydrocarbon group” denotes a carbon group which additionally contains one or more H atoms and optionally one or more heteroatoms, such as, for example, N, O, S, P, Si, Se, As, Te or Ge.

“Halogen” denotes F, Cl, Br or I.

The terms “alkyl”, “aryl”, “heteroaryl”, etc., also encompass polyvalent groups, for example alkylene, arylene, heteroarylene, etc.

The term “alkyl” in this application encompasses straight-chain and branched alkyl groups having 1 to 9 carbon atoms, preferably the straight-chain groups methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl and nonyl. Groups having 1 to 5 carbon atoms are particularly preferred.

The term “alkenyl” in this application encompasses straight-chain and branched alkenyl groups having 2 to 9 carbon atoms, preferably the straight-chain groups having 2 to 7 carbon atoms. Particularly preferred alkenyl groups are C_2-C₇-1E-alkenyl, C_4-C_7-3E-alkenyl, C_5-C_7-4-alkenyl, C_6-C_7-5-alkenyl and C₇-6-alkenyl, in particular C_2-C_7-1E-alkenyl, C_4-C_7-3E-alkenyl and C_5-C₇-4-alkenyl. Examples of preferred alkenyl groups are vinyl, 1E-propenyl, 1E-butenyl, 1E-pentenyl, 1E-hex-enyl, 1E-hept-enyl, 3-butenyl, 3E-pentenyl, 3E-hexenyl, 3E-heptenyl, 4-pentenyl, 4Z-hexenyl, 4E-hexenyl, 4Z-hep-tenyl, 5-hexenyl, 6-heptenyl and the like. Groups having up to 5 carbon atoms are particularly preferred.

The term “fluoroalkyl” in this application encompasses straight-chain groups having a terminal fluorine, i.e. fluoromethyl, 2-fluoroethyl, 3-fluoropropyl, 4-fluoro-butyl, 5-fluoro-pentyl, 6-fluorohexyl and 7-fluoroheptyl. However, other positions of the fluorine are not excluded.

The term “oxaalkyl” or “alkoxy” in this application encompasses straight-chain radicals of the formula C_nH_2n+1-O—(CH₂)_m, in which n and m each, independently of one another, denote 1 to 6. Preferably, n=1 and m=1 to 6.

The term “aryl” denotes an aromatic carbon group or a group derived therefrom. The term “heteroaryl” denotes “aryl” in accordance with the above definition containing one or more heteroatoms.

The polymerisable group P is a group which is suitable for a polymerisation reaction, such as, for example, free-radical or ionic chain polymerisation, polyaddition or polycondensation, or for a polymer-analogous reaction, for example addition or condensation onto a main polymer chain. Particular preference is given to groups for chain polymerisation, in particular those containing a C═C double bond or a —C≡C— triple bond, and groups which are suitable for polymerisation with ring opening, such as, for example, oxetane or epoxide groups.

The polymerisable compounds are prepared analogously to processes which are known to the person skilled in the art and are described in standard works of organic chemistry, such as, for example, in Houben-Weyl, Methoden der organischen Chemie [Methods of Organic Chemistry], Thieme-Verlag, Stuttgart.

Typical and preferred reactive mesogens (RMs) are described, for example, in WO 93/22397, EP 0 261 712, DE 195 04 224, WO 95/22586, WO 97/00600, U.S. Pat. No. 5,518,652, U.S. Pat. No. 5,750,051, U.S. Pat. No. 5,770,107 and U.S. Pat. No. 6,514,578. Very particularly referred reactive mesogens are shown on Table E.

The process is used for the preparation of a mixture consisting of organic compounds, one or more of which are preferably mesogenic, preferably liquid-crystalline, per se. The mesogenic compounds preferably include one or more liquid-crystalline compounds. The process product is preferably a homogeneous, liquid-crystalline mixture. In the broader sense, the process also encompasses the preparation of mixtures which consist of organic substances in the homogeneous liquid phase and comprise additives which are insoluble therein (for example small particles). The process can thus also be used for the preparation of suspension-like or emulsion-like mixtures based on a continuous homogeneous organic phase. However, process variants of this type are generally less preferred.

By means of suitable additives, the liquid-crystal mixtures comprising at least two compounds of the formula I can be modified in such a way that they can be employed in any type of LCD display that has been disclosed to date, for example, ECB, VAN, IPS, FFS, TN, TN-TFT, STN, OCB, GH, PS-IPS, PS-FFS, PM-VA, PVA, PSA, PS-VA or ASM-VA displays.

The liquid-crystal mixtures may also comprise further additives known to the person skilled in the art and described in the literature, such as, for example, UV stabilisers, such as, for example, Tinuvin®, for example Tinuvin® 770, from BASF, antioxidants, such as, for example, Irganox®, for example Irganox® 1076 (octadecyl 3-(3,5-di-tert.butyl-4-hydroxyphenyl)propionate), from BASF, free-radical scavengers, nanoparticles, microparticles, one or more dopants, etc. For example, 0-15% of pleochroic dyes may be added, furthermore conductive salts, preferably ethyldimethyldodecylammonium 4-hexoxybenzoate, tetrabutylammonium tetraphenylboranate or complex salts of crown ethers (cf., for example, Haller et al., Mol. Cryst. Liq. Cryst. Volume 24, pages 249-258 (1973)) in order to improve the conductivity, or substances can be added in order to modify the dielectric anisotropy, the viscosity and/or the alignment of the nematic phases. Substances of this type are described, for example, in DE-A 22 09 127, 22 40 864, 23 21 632, 23 38 281, 24 50 088, 26 37 430 and 28 53 728.

Suitable stabilisers and dopants which can be combined with the compounds of the formula I in the electrodialysis cell during the preparation of the liquid-crystal mixtures are indicated below in Tables C and D.

The following examples are intended to explain the invention without limiting it. Above and below, percent data denote percent by weight; all temperatures are indicated in degrees Celsius.

Throughout the patent application, 1,4-cyclohexylene rings and 1,4-phenylene rings are depicted as follows:

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The cyclohexylene rings are trans-1,4-cyclohexylene rings.

In the present application and in the following examples, the structures of the liquid-crystal compounds are indicated by means of acronyms, with the transformation into chemical formulae taking place in accordance with Tables A and B below. All radicals C_nH_2n+1and C_mH_2m+1are straight-chain alkyl radicals having n and m C atoms respectively; n, m, k and z are integers and preferably denote 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 or 12. The term “(O)C_mH_2m-1” means OC_mH_2m+1or C_mH_2m+1. The coding in Table B is self-evident.

In Table A, only the acronym for the parent structure is indicated. In individual cases, this is followed, separated from the acronym for the parent structure by a dash, by a code for the substituents R¹*, R²*, L¹* and L²*:

Code for R¹*,

R²*, L¹*, L²*, L³*
R¹*
R²*
L¹*
L²*

nm
C_nH_2n+1
C_mH_2m+1
H
H

nOm
C_nH_2n+1
OC_mH_2m+1
H
H

nO.m
OC_nH_2n+1
C_mH_2m+1
H
H

n
C_nH_2n+1
CN
H
H

nN.F
C_nH_2n+1
CN
F
H

nN.F.F
C_nH_2n+1
CN
F
F

nF
C_nH_2n+1
F
H
H

nCl
C_nH_2n+1
Cl
H
H

nOF
OC_nH_2n+1
F
H
H

nF.F
C_nH_2n+1
F
F
H

nF.F.F
C_nH_2n+1
F
F
F

nOCF₃
C_nH_2n+1
OCF₃
H
H

nOCF₃.F
C_nH_2n+1
OCF₃
F
H

n-Vm
C_nH_2n+1
—CH═CH—C_mH_2m+1
H
H

nV-Vm
C_nH_2n+1—CH═CH—
—CH═CH—C_mH_2m+1
H
H

Preferred mesogenic or liquid-crystalline substances which are suitable for the preparation of liquid-crystal mixtures and can be used in the purification process according to the invention are listed, in particular, in Tables A and B:

TABLE A

PYP

PYRP

BCH

CBC

CCH

CCP

CPTP

CEPTP

ECCP

CECP

EPCH

PCH

PTP

CCPC

BECH

EBCH

CPC

FET-nF

CGG

CGU

CFU

TABLE B

(n = 1-15; (O)C_nH_2n+1 means C_nH_2n+1 or OC_nH_2n+1)

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APU-n-OXF

ACQU-n-F

CPU-n-OXF

APUQU-n-F

BCH-n.Fm

CFU-n-F

CBC-nmF

CCP-nOCF₃

CCZU-n-F

ECCP-nm

ECCP-nF.F

PGP-n-m

CGU-n-F

CGUQU-n-F

CLUQU-n-F

CDUQU-n-F

CDU-n-F

DCU-n-F

CGG-n-F

CPZG-n-OT

CC-nV-Vm

GPP-n-m

CCP-Vn-m

CCG-V-F

CCP-nV-m

CC-n-V

CCQU-n-F

CC-n-Vm

CPPC-nV-Vm

embedded image

CCQG-n-F

CQU-n-F

CP-1V-m

CP-2V-m

CP-V2-m

CP-1V-N

CP-V2-N

CCP-nF

CCP-nF.F

BCH-nF.F.F

embedded image

CCP-nF.F.F

embedded image

Dec-U-n-F

CWCU-n-F

CPGP-n-m

CWCG-n-F

CCOC-n-m

CPTU-n-F

GPTU-n-F

PQU-n-F

PUQU-n-F

PGU-n-F

CGZP-n-OT

PGU-n-OXF

CCGU-n-F

CUQU-n-F

CCCQU-n-F

CPGU-n-OT

CPGU-n-F

CVCP-1V-OT

embedded image

GGP-n-Cl

PP-nV-Vm

PP-1-nVm

CWCQU-n-F

PPGU-n-F

PGUQU-n-F

GPQU-n-F

MPP-n-F

PGP-n-kVm

PP-n-kVm

PCH-nCl

GP-n-Cl

GGP-n-F

PGIGI-n-F

AIK-n-F

BCH-nm

BCN-nm

CY-n-Om

CP(F,Cl)n-Om

embedded image

CP(Cl,F)-n-Om

embedded image

CCY-n-Om

CCY-n-m

CCP(Cl,F)-n-Om

embedded image

CCP(F,Cl)n-Om

embedded image

CCY-V-m

CCY-Vn-m

CCY-n-OmV

CBC-nm

CCP-V-m

CCP-n-m

CPYC-n-m

CYYC-n-m

CCYY-n-(O)m

embedded image

CCY-n-O2V

CY-n-m

CCH-nm

CCH-nOm

CEY-n-Om

CC-n-V1

CY-n-OV

CC-2V-V2

CVC-n-m

CC-n-mV

CP-nOmFF

CH-nm

CEY-V-n

CVY-V-n

CY-V-On

CY-n-OC(CH₃)═CH₂

embedded image

CY-1V-On

CY-V1-On

CY-n-O1V

CCN-nm

CCPC-nm

CCY-n-zOm

CPY-n-m

CPY-n-Om

CPY-1V-Om

CPY-V-Om

CPP(Cl,F)-n-(O)m

embedded image

CQY-n-(O)m

embedded image

CPP(F,Cl)n—(O)m

embedded image

CQIY-n-(O)m

embedded image

PGIY-n-Om

CCQY-n-(O)m

embedded image

CCQIY-n-(O)m

embedded image

CPQY-n-(O)m

embedded image

CPQIY-n-(O)m

embedded image

CPYG-n-(O)m

embedded image

CCY-V-Om

D-nOmFF

CY-nV-(O)m

embedded image

PCH-nm

PCH-nOm

CY-nV-OmV

DPGU-n-F

DPGU-n-OT

PP-n-m

PYP-n-mV

CYLI-n-m

CENap-n-Om

embedded image

LY-n-(O)m

CCNap-n-Om

embedded image

CNap-n-Om

YPY-n-mV

CETNap-n-Om

embedded image

CTNap-n-Om

embedded image

CK-n-F

YPY-n-m

LYLI-n-m

C-DFDBF-n-(O)m

embedded image

CPYG-n-(O)m

embedded image

DFDBC-n(O)-(O)m

embedded image

HP-nN.F

CCY-V2-(O)m

embedded image

CCY-1V2-(O)m

embedded image

CCY-3V-(O)m

embedded image

PYP-nF

MEnN.F

MUQU-n-F

NUQU-n-F

CCY-V2-(O)m

embedded image

CCY-1V2-(O)m

embedded image

CCY-3V-(O)m

embedded image

CCVC-n-V

COChrom-n-Om

embedded image

COChrom-n-m

embedded image

CCOChrom-n-Om

embedded image

CCOChrom-n-m

embedded image

CONaph-n-Om

embedded image

CCONaph-n-Om

embedded image

CLY-n-Om

CLY-n-m

LYLI-n-m

CYLI-n-m

LY-n-(O)m

COYOICC-n-m

embedded image

COYOIC-n-V

embedded image

CCOY-V-O2V

embedded image

CCOY-V-O3V

embedded image

COY-n-Om

CCOY-n-Om

PYP-n-m

PYP-n-Om

YPY-n-m

YPY-n-mV

Y-nO-Om

Y-n-Om

PY-n-m

PY-n-Om

PY-V2-Om

PY-3V-Om

PY-V-Om

PY-1V-Om

PY-1V2-Om

C-DFDBF-n-(O)m

embedded image

DFDBC-n(O)-(O)m

embedded image

B-nO-Om

DFDBC-n(O)-(O)m

embedded image

CPU-n-VT

CPU-n-AT

DGUQU-n-F

C-n-V

C-n-XF

C-n-m

CC-n-2V1

BCH-nF

BCH-nF.F

PY-n-m

PY-n-Om

PTP-nOmFF

CPTP-nOmFF

embedded image

PPTUI-n-m

CPTP-nOm

CPTP-nm

PTP-nOm

PTP-nm

Y-nO-Om

Y-nO-OmV

Y-nO-OmVm′

Particular preference is given to liquid-crystalline mixtures which comprise at least one, two, three, four or more compounds from Table B besides one or more compounds of the formula I.

TABLE C

Table C indicates possible dopants, which are generally added to the liquid-crystalline mixtures. The mixtures preferably comprise 0-10% by weight, in particular 0.01-5% by weight and particularly preferably 0.01-3% by weight, of dopants.

TABLE D

STAB-1

STAB-2

STAB-3

STAB-4

STAB-5

STAB-6

STAB-7

STAB-8

STAB-9

STAB-10

STAB-11

STAB-12

STAB-13

STAB-14

STAB-15

STAB-16

STAB-17

STAB-18

STAB-19

STAB-20

STAB-21

STAB-22

STAB-23

STAB-24

STAB-25

STAB-26

STAB-27

STAB-28

STAB-29

STAB-30

STAB-31

STAB-32

STAB-33

STAB-34

STAB-35

STAB-36

STAB-37

STAB-38

Stabilisers, which can be added, for example, to the liquid-crystalline mixtures in amounts of 0-10% by weight, are shown below.

(n=1-12)

Suitable polymerisable compounds (reactive mesogens) for use in the mixtures according to the invention, preferably in PSA and PS-VA applications or PS-IPS/FFS applications, are shown below in Table E:

TABLE E

RM-1

RM-2

RM-3

RM-4

RM-5

RM-6

RM-7

RM-8

RM-9

RM-10

RM-11

RM-12

RM-13

RM-14

RM-15

RM-16

RM-17

RM-18

RM-19

RM-20

RM-21

RM-22

RM-23

RM-24

RM-25

RM-26

RM-27

RM-28

RM-29

RM-30

RM-31

RM-32

RM-33

RM-34

RM-35

RM-36

RM-37

RM-38

RM-39

RM-40

RM-41

RM-42

RM-43

RM-44

RM-45

RM-46

RM-47

RM-48

RM-49

RM-50

RM-51

RM-52

RM-53

RM-54

RM-55

RM-56

RM-57

RM-58

RM-59

RM-60

RM-61

RM-62

RM-63

RM-64

RM-65

RM-66

RM-67

RM-68

RM-69

RM-70

RM-71

RM-72

RM-73

RM-74

RM-75

RM-76

RM-77

RM-78

RM-79

RM-80

RM-81

RM-82

RM-83

RM-84

RM-85

RM-86

RM-87

RM-88

RM-89

RM-90

RM-91

RM-92

RM-93

RM-94

RM-95

Table E shows example compounds which can preferably be used as reactive mesogenic compounds in the liquid-crystalline mixtures according to the invention. If the liquid-crystalline mixtures comprise one or more reactive compounds, they are preferably employed in amounts of 0.01-5% by weight. It may be necessary also to add an initiator or a mixture of two or more initiators for the polymerisation. The initiator or the initiator mixture is preferably added in amounts of 0.001-2% by weight, based on the mixture. A suitable initiator is, for example, Irgacure (BASF) or Irganox (BASF).

In a preferred embodiment, the liquid-crystalline mixtures comprise one or more compounds selected from the group of the compounds from Table E.

EXAMPLES

The following working examples are intended to explain the invention without restricting it.

Above and below, percent data denote percent by weight. All temperatures are indicated in degrees Celsius. m.p. denotes melting point, cl.p.=clearing point. Furthermore, C=crystalline state, N=nematic phase, S=smectic phase and I=isotropic phase. The data between these symbols represent the transition temperatures. Furthermore,

V_odenotes threshold voltage, capacitive [V] at 20° C.
Δπ denotes the optical anisotropy measured at 20° C. and 589 nm
Δ∈ denotes the dielectric anisotropy at 20° C. and 1 kHz
cl.p. denotes clearing point [° C.]
K₁denotes elastic constant, “splay” deformation at 20° C., [pN]
K₃denotes elastic constant, “bend” deformation at 20° C., [pN]
γ₁denotes rotational viscosity measured at 20° C. [mPa·s], determined by the rotation method in a magnetic field
LTS denotes low-temperature stability (nematic phase), determined in test cells.

The following examples are intended to explain the invention without limiting it.

Above and below, percentages denote percent by weight. All temperatures are indicated in degrees Celsius.

WORKING EXAMPLES
Example 1

A liquid-crystalline mixture, for example for PS-VA applications, of the composition

CCH-35
9.47%

CCH-501
4.99%

CCY-2-1
9.47%

CCY-3-1
10.47%

CCY-3-O2
10.47%

CCY-5-O2
9.47%

CPY-2-O2
11.96%

CY-3-O4
8.97%

CY-5-O4
10.97%

RM-1
0.30%

PCH-53
13.46%

is purified using the process according to the invention.

Example 2

A liquid-crystalline mixture, for example for PS-VA applications, of the composition

BCH-32
7.48%

CCH-23
21.93%

CCH-34
3.49%

CCY-3-O3
6.98%

CCY-4-O2
7.98%

CPY-2-O2
10.97%

CPY-3-O2
10.97%

CY-3-O2
15.45%

RM-1
0.30%

PCH-301
12.46%

PCH-302
1.99%

is purified using the process according to the invention.

Example 3

A liquid-crystalline mixture, for example for PS-VA applications, of the composition

CC-3-V1
7.98%

CCH-23
17.95%

CCH-34
3.99%

CCH-35
6.98%

CCP-3-1
4.99%

CCY-3-O2
12.46%

CPY-2-O2
7.98%

CPY-3-O2
10.97%

CY-3-O2
15.45%

RM-1
0.30%

PY-3-O2
10.97%

is purified using the process according to the invention.

Example 4

A liquid-crystalline mixture, for example for PS-VA applications, of the composition

CC-3-V1
8.97%

CCH-23
12.96%

CCH-34
6.23%

CCH-35
7.73%

CCP-3-1
3.49%

CCY-3-O2
12.21%

CPY-2-O2
6.73%

CPY-3-O2
11.96%

CY-3-O2
11.47%

RM-1
0.30%

PP-1-2V1
4.24%

PY-3-O2
13.71%

is purified using the process according to the invention.

Example 5

A liquid-crystalline mixture, for example for TN-TFT applications, of the composition

CBC-33
3.50%

CC-3-V
38.00%

CC-3-V1
10.00%

CCP-V-1
3.00%

CCP-V2-1
9.00%

PGP-2-3
5.00%

PGP-2-4
5.00%

PGU-2-F
8.00%

PGU-3-F
9.00%

PUQU-3-F
9.50%

is purified using the process according to the invention.

Example 6

A liquid-crystalline mixture, for example for IPS or FFS applications, of the composition

APUQU-3-F
4.50%

CC-3-V
44.00%

CC-3-V1
12.00%

CCP-V-1
11.00%

CCP-V2-1
9.00%

PGP-2-3
6.00%

PGUQU-3-F
6.00%

PP-1-2V1
7.00%

PPGU-3-F
0.50%

is purified using the process according to the invention.

Example 7

A liquid-crystalline mixture, for example for IPS or FFS applications, of the composition

APUQU-3-F
8.00%

CBC-33
3.00%

CC-3-V
34.00%

CC-3-V1
2.50%

CCGU-3-F
4.00%

CCP-30CF₃
4.00%

CCP-3F.F.F
4.50%

CCP-50CF₃
3.00%

CCP-V-1
10.00%

CCQU-3-F
10.00%

CPGU-3-OT
6.00%

PGUQU-3-F
4.00%

PUQU-3-F
7.00%

is purified using the process according to the invention.

Example 8

A liquid-crystalline mixture, for example for IPS or FFS applications, of the composition

APUQU-2-F
5.00%

APUQU-3-F
7.50%

BCH-3F.F.F
7.00%

CC-3-V
40.50%

CC-3-V1
6.00%

CCP-V-1
9.50%

CPGU-3-OT
5.00%

PGP-2-3
6.00%

PGP-2-4
6.00%

PPGU-3-F
0.50%

PUQU-3-F
7.00%

is purified using the process according to the invention.

Example 9

A liquid-crystalline mixture, for example for TN-TFT applications, of the composition

APUQU-2-F
8.00%

APUQU-3-F
8.00%

BCH-32
7.00%

CC-3-V
43.00%

CCP-V-1
9.00%

PGP-2-3
7.00%

PGP-2-4
6.00%

PUQU-2-F
5.00%

PUQU-3-F
7.00%

is purified using the process according to the invention.

Example 10

A liquid-crystalline mixture, for example for TN-TFT applications, of the composition

BCH-5F.F
8.00%

CBC-33F
3.00%

CC-3-V
22.00%

CCGU-3-F
6.00%

CCP-3F.F.F
8.00%

CCP-5F.F.F
4.00%

CCP-V-1
13.00%

CCP-V2-1
11.00%

CCQU-3-F
5.00%

CCQU-5-F
4.00%

PUQU-3-F
16.00%

is purified using the process according to the invention.

Example 11

A liquid-crystalline mixture, for example for TN-TFT applications, of the composition

CBC-33F
3.00%

CBC-53F
3.00%

CC-3-V
17.00%

CC-3-V1
4.00%

CCP-3F.F.F
8.00%

CCPC-33
3.00%

CCPC-34
3.00%

CCP-V-1
5.00%

CCP-V2-1
2.00%

CCQU-2-F
1.50%

CCQU-3-F
10.00%

CCQU-5-F
10.00%

CGU-3-F
6.00%

PGP-2-3
7.50%

PP-1-2V1
7.00%

PUQU-3-F
10.00%

is purified using the process according to the invention.

Example 12

A liquid-crystalline mixture, for example for TN-TFT applications, of the composition

APUQU-2-F
1.00%

BCH-3F.F.F
15.00%

CC-3-V
33.50%

CC-3-V1
2.00%

CCGU-3-F
1.00%

CCPC-33
2.00%

CCP-V-1
4.50%

BCH-2F
5.00%

BCH-3F
5.00%

PGP-2-3
8.50%

PGUQU-3-F
7.80%

PP-1-2V1
11.00%

PPGU-3-F
0.20%

PUQU-3-F
3.50%

is purified using the process according to the invention.

Example 13

A liquid-crystalline mixture, for example for IPS or FFS applications, of the composition

APUQU-2-F
2.00%

APUQU-3-F
6.00%

CC-3-V
42.00%

CCP-3-1
3.00%

CCP-3-3
3.00%

CCP-3F.F.F
8.00%

CCP-V-1
1.50%

CCQU-3-F
7.00%

CCQU-5-F
3.00%

CPGU-3-OT
6.50%

PGUQU-3-F
5.00%

PGUQU-4-F
4.00%

PGUQU-5-F
4.00%

PPGU-3-F
0.50%

PUQU-3-F
4.50%

is purified using the process according to the invention.

Example 14

A liquid-crystalline mixture, for example for TN-TFT applications, of the composition

CC-3-V
49.50%

CCP-3-1
1.50%

CCP-V-1
6.00%

CPGU-3-OT
7.00%

PGP-2-3
8.50%

PGP-2-4
5.50%

PGUQU-3-F
7.00%

PGUQU-4-F
4.00%

PP-1-2V1
2.50%

PPGU-3-F
0.50%

PUQU-3-F
8.00%

is purified using the process according to the invention.

Example 15

A liquid-crystalline mixture, for example for VA applications, of the composition

BCH-32
6.00%

CCH-23
18.00%

CCH-34
8.00%

CCP-3-1
12.00%

CCP-3-3
3.00%

CCY-3-O2
6.00%

CPY-2-O2
6.00%

CPY-3-O2
7.00%

CY-3-O2
14.00%

CY-3-O4
8.00%

CY-5-O2
9.00%

PYP-2-3
3.00%

is purified using the process according to the invention.

Example 16

A liquid-crystalline mixture, for example for PS-VA applications, of the composition

CC-3-V1
7.98%

CCH-23
17.95%

CCH-34
3.99%

CCH-35
6.98%

CCP-3-1
4.99%

CCY-3-O2
12.46%

CPY-2-O2
7.98%

CPY-3-O2
10.97%

CY-3-O2
15.45%

RM-17
0.30%

PY-3-O2
10.97%

is purified using the process according to the invention.

Example 17

A liquid-crystalline mixture, for example for VA applications, of the composition

CC-3-V
29.50%

PP-1-3
11.00%

PY-3-O2
12.00%

CCP-3-1
9.50%

CCOY-2-O2
18.00%

CCOY-3-O2
13.00%

GPP-5-2
7.00%

is purified using the process according to the invention.

Mixture Examples 1 to 17 may additionally also comprise one or more, for example one or two, stabiliser(s) and/or a dopant from Tables C and D.

Example 18

A liquid-crystalline mixture, for example for TN applications, of the composition

BCH-3F.F
7.50%

BCH-5F.F
7.50%

CC-3-V
35.00%

CCGU-3-F
4.00%

CCP-3F.F.F
12.00%

CCPC-33
3.00%

CCP-V-1
10.00%

PGP-2-4
4.00%

PPGU-3-F
1.00%

PUQU-3-F
16.00%

is purified using the process according to the invention.

Example 19

A liquid-crystalline mixture, for example for TN applications, of the composition

BCH-2F.F
4.00%

BCH-3F.F.F
8.50%

CC-3-V1
8.00%

CC-4-V
10.00%

CCG-V-F
8.00%

CCP-20CF₃
7.00%

CCP-2F.F.F
8.00%

CCP-30CF₃
5.00%

CCP-3-1
3.00%

CCPC-33
2.50%

CCP-V-1
11.50%

CCQU-3-F
5.00%

CDU-2-F
7.00%

CDU-3-F
7.00%

PUQU-3-F
5.50%

is purified using the process according to the invention.

Example 20

A liquid-crystalline mixture, for example for PS-VA applications, of the composition

BCH-32
7.48%

CCH-23
21.93%

CCH-34
3.49%

CCY-3-O3
6.98%

CCY-4-O2
7.98%

CPY-2-O2
10.97%

CPY-3-O2
10.97%

CY-3-O2
15.45%

RM-1
0.30%

PCH-301
12.46%

PCH-302
1.99%

is purified using the process according to the invention.

Example 21

A liquid-crystalline mixture, for example for VA applications, of the composition

BCH-32
8.50%

CC-3-V
24.00%

CC-3-V1
5.00%

CCP-V-1
2.00%

CCY-3-1
2.50%

CCY-3-O1
7.00%

CCY-3-O2
6.50%

CCY-3-O3
4.00%

CCY-4-O2
4.00%

CPY-2-O2
7.50%

CPY-3-O2
10.00%

CY-3-O2
3.50%

PY-3-O2
8.50%

PYP-2-3
4.00%

PYP-2-4
3.00%

is purified using the process according to the invention.

Example 22

A liquid-crystalline mixture, for example for FFS applications, of the composition

APUQU-2-F
4.00%

CC-3-V
26.50%

CC-3-V1
7.00%

CCGU-3-F
1.50%

CCP-2F.F.F
1.50%

CCP-30CF₃
8.00%

CCP-3-1
2.00%

CCP-V-1
10.00%

CCP-V2-1
7.00%

CDU-2-F
5.00%

CPGU-3-OT
4.50%

PGU-3-F
3.00%

PGUQU-3-F
3.00%

PGUQU-4-F
3.00%

PPGU-3-F
1.50%

PUQU-3-F
12.50%

is purified using the process according to the invention.

Example 23

A liquid-crystalline mixture, for example for FFS applications, of the composition

BCH-3F.F
7.00%

CBC-33
3.00%

CC-3-V
25.00%

CCGU-3-F
6.00%

CCP-30CF₃
8.00%

CCP-3-1
4.50%

CCP-V-1
13.50%

CCP-V2-1
6.00%

CCQU-3-F
8.00%

CPGP-5-2
3.00%

DPGU-4-F
2.50%

PPGU-3-F
1.00%

PUQU-3-F
4.50%

Y-4O-O4
8.00%

is purified using the process according to the invention.

Example 24

A liquid-crystalline mixture, for example for PS-VA applications, of the composition

CC-3-V1
10.22%

CCH-23
18.44%

Irganox ® 1076
0.01%

RM-1
0.30%

PY-3-O2
12.96%

PP-1-2V1
3.74%

CY-3-O2
11.47%

CPY-3-O2
9.72%

CPY-2-O2
5.98%

CCY-3-O2
11.96%

CCY-3-1
2.49%

CCP-3-1
5.98%

CCH-35
6.73%

is purified using the process according to the invention.

Example 25

A liquid-crystalline mixture, for example for TN applications, of the composition

APUQU-2-F
2.00%

BCH-3F.F
9.00%

BCH-3F.F.F
9.00%

CC-3-V1
5.00%

CC-4-V
6.00%

CCGU-3-F
7.50%

CCG-V-F
15.50%

CCP-2F.F.F
8.50%

CCP-30CF₃
6.00%

CCP-3-1
2.00%

CCP-3F.F.F
10.00%

CCQU-3-F
9.50%

CCQU-5-F
9.00%

PPGU-3-F
1.00%

is purified using the process according to the invention.

Example 26

A liquid-crystalline mixture, for example for PS-VA applications, of the composition

RM-1
0.199%

Irganox ® 1076
0.001%

PYP-2-4
8.98%

PYP-2-3
8.98%

PCH-53
2.99%

PCH-301
5.99%

CY-3-O4
20.46%

CPY-3-O2
4.49%

CPY-2-O2
9.98%

CCY-4-O2
6.99%

CCY-3-O3
7.98%

CCY-3-O2
6.99%

CCH-35
5.99%

BCH-52
3.99%

CCH-34
5.99%

is purified using the process according to the invention.

Example 27

A liquid-crystalline mixture, for example for FFS applications, of the composition

CDUQU-3-F
3.00%

CCP-V-1
13.50%

CCP-3-3
2.50%

CC-3-V
44.00%

APUQU-2-F
4.50%

CPGU-3-OT
4.00%

PUQU-2-F
5.00%

PGU-2-F
6.00%

PGU-3-F
6.00%

PGUQU-3-F
3.50%

PGUQU-4-F
3.50%

PPGU-3-F
0.50%

DPGU-4-F
4.00%

is purified using the process according to the invention.

Example 28

A liquid-crystalline mixture, for example for FFS applications, of the composition

BCH-3F.F
15.00%

BCH-3F.F.F
8.00%

CC-3-V
10.00%

CC-3-V1
10.50%

CC-4-V
10.50%

CCP-30CF₃
10.00%

CCP-V-1
15.00%

CDUQU-3-F
6.50%

PGP-2-2V
1.00%

PGU-2-F
8.00%

PPGU-3-F
1.00%

PUQU-3-F
4.50%

is purified using the process according to the invention.

Example 29

A liquid-crystalline mixture, for example for FFS applications, of the composition

PUQU-3-F
14.00%

PPGU-3-F
1.00%

PGP-2-2V
4.50%

DPGU-4-F
3.00%

CPGU-3-OT
3.00%

STAB-37
0.01%

CCP-V-1
14.00%

CCP-30CF₃
6.00%

CC-3-V1
5.50%

CC-3-V
38.99%

APUQU-2-F
4.00%

CCY-3-O2
6.00%

is purified using the process according to the invention.

Example 30

A liquid-crystalline mixture, for example for VA applications, of the composition

CLY-3-O2
10.00%

CCY-3-O2
9.25%

CCH-35
8.00%

CC-3-V1
10.00%

CC-3-V
27.50%

CPY-3-O2
11.75%

PYP-2-4
0.50%

PY-4-O2
9.00%

PY-3-O2
14.00%

is purified using the process according to the invention.

Example 31

A liquid-crystalline mixture, for example for PVA applications, of the composition

CCH-23
12.00%

CCH-34
10.00%

CCP-3-1
7.00%

CCY-3-1
10.00%

CCY-3-O2
9.00%

CCY-3-O3
9.00%

CCY-4-O2
9.00%

CPGP-4-3
2.00%

CPY-2-O2
8.00%

CPY-3-O2
8.00%

CY-3-O4
4.50%

PCH-301
10.00%

PYP-2-3
1.50%

is purified using the process according to the invention.

Example 32

A liquid-crystalline mixture, for example for FFS applications, of the composition

CC-3-V
33.00%

CCY-3-O1
5.00%

CCY-3-O2
6.50%

CCY-4-O2
8.00%

CCY-5-O2
3.50%

CPY-2-O2
9.00%

CPY-3-O2
9.00%

CY-3-O2
10.00%

CY-5-O2
2.00%

PY-3-O2
9.00%

PYP-2-3
5.00%

is purified using the process according to the invention.

Example 33

A liquid-crystalline mixture, for example for FFS applications, of the composition

CC-3-V
44.50%

CC-3-V1
5.50%

CCP-30CF₃
8.00%

CCP-V-1
8.00%

CCQU-3-F
5.00%

PGP-2-3
4.00%

PGP-2-4
5.00%

PGUQU-3-F
3.00%

PGUQU-4-F
9.00%

PGUQU-5-F
5.50%

PUQU-3-F
2.50%

is purified using the process according to the invention.

Example 34

A liquid-crystalline mixture, for example for FFS applications, of the composition

APUQU-2-F
5.00%

APUQU-3-F
5.00%

CC-3-V
40.00%

CC-3-V1
4.50%

CCGU-3-F
3.50%

CCP-30CF₃
5.50%

CCP-V-1
10.50%

CCQU-3-F
5.50%

CPGU-3-OT
3.00%

PGUQU-4-F
6.00%

PGUQU-5-F
4.50%

PUQU-3-F
7.00%

is purified using the process according to the invention.

Example 35

A liquid-crystalline mixture, for example for FFS applications, of the composition

CC-3-V
23.50%

CC-3-V1
9.00%

CCGU-3-F
5.00%

CCP-30CF₃
8.00%

CCP-50CF₃
6.00%

CCP-V-1
12.00%

CCP-V2-1
5.00%

CPGP-4-3
3.00%

PCH-301
5.00%

PGP-1-2V
7.50%

PGP-2-2V
8.00%

PUQU-3-F
8.00%

is purified using the process according to the invention.

Example 36

A liquid-crystalline mixture, for example for IPS applications, of the composition

APUQU-2-F
5.00%

APUQU-3-F
8.00%

CC-3-V
36.00%

CC-3-V1
5.00%

CCP-V-1
8.00%

CCQU-3-F
9.50%

PGP-2-2V
3.00%

PGUQU-3-F
4.00%

PGUQU-4-F
8.00%

PGUQU-5-F
5.00%

PUQU-3-F
8.50%

is purified using the process according to the invention.

Example 37

A liquid-crystalline mixture, for example for IPS applications, of the composition

APUQU-2-F
7.00%

APUQU-3-F
7.00%

CC-3-2V1
4.50%

CC-3-V
32.00%

CC-3-V1
11.00%

CCP-30CF₃
7.50%

CCP-50CF₃
1.50%

DGUQU-4-F
8.00%

DPGU-4-F
5.00%

PGUQU-3-F
3.00%

PGUQU-4-F
8.00%

PGUQU-5-F
2.00%

PP-1-2V1
2.00%

PUQU-3-F
1.50%

is purified using the process according to the invention.

Example 38

A liquid-crystalline mixture, for example for PS-VA applications, of the composition

CCH-23
13.97%

CCH-34
11.98%

CCP-3-1
2.99%

CCY-3-1
7.98%

CCY-3-O2
11.98%

CCY-3-O3
11.98%

CCY-4-O2
9.98%

CPY-2-O2
2.99%

CPY-3-O2
9.98%

PCH-301
9.98%

PYP-2-3
5.99%

RM-1
0.20%

is purified using the process according to the invention.

Example 39

A liquid-crystalline mixture, for example for FFS applications, of the composition

CC-3-V
29.00%

CCY-3-O1
3.50%

CCY-3-O2
9.00%

CCY-4-O2
9.00%

CCY-5-O2
3.00%

CPY-3-O2
9.50%

CY-3-O2
13.00%

CY-5-O2
2.00%

PY-3-O2
10.00%

PYP-2-3
2.50%

CPY-2-O2
9.50%

is purified using the process according to the invention and 0.005% of STAB-35 is subsequently added.

Example 40

A liquid-crystalline mixture, for example for PS-IPS applications, of the composition

APUQU-2-F
2.99%

APUQU-3-F
5.99%

BCH-2F.F
2.00%

BCH-3F.F
7.48%

CC-3-V
25.44%

CC-3-V1
5.98%

CCP-V-1
12.97%

CCP-V2-1
5.98%

CCQU-3-F
7.98%

CCQU-5-F
3.98%

PGUQU-3-F
4.99%

PPGU-3-F
0.50%

PUQU-3-F
13.47%

RM-35
0.25%

is purified using the process according to the invention.

Example 41

A liquid-crystalline mixture, for example for PS-IPS applications, of the composition

APUQU-2-F
2.99%

APUQU-3-F
5.99%

BCH-2F.F
2.00%

BCH-3F.F
7.48%

CC-3-V
25.44%

CC-3-V1
5.98%

CCP-V-1
12.97%

CCP-V2-1
5.99%

CCQU-3-F
7.98%

CCQU-5-F
3.98%

PGUQU-3-F
4.98%

PPGU-3-F
0.50%

PUQU-3-F
13.47%

RM-41
0.25%

is purified using the process according to the invention.

Example 42

A liquid-crystalline mixture, for example for TN applications, of the composition

PPGU-3-F
0.50%

PP-1-2V1
1.50%

PGUQU-4-F
4.00%

PGUQU-3-F
5.00%

PGP-2-5
2.00%

PGP-2-4
5.00%

PUQU-3-F
6.00%

PCH-302
6.00%

CPGP-5-3
6.00%

CPGP-5-2
6.00%

CC-3-V
30.00%

BCH-3F.F.F
12.00%

BCH-3F.F
10.00%

PGP-2-3
6.00%

is purified using the process according to the invention.

Example 43

A liquid-crystalline mixture, for example for TN-TFT applications, of the composition

CC-3-V
29.00%

CCGU-3-F
4.00%

CCG-V-F
5.00%

CCP-2F.F.F
5.00%

CCP-3F.F.F
8.00%

CCPC-33
3.00%

CCPC-34
3.00%

CCPC-35
1.50%

CCP-V-1
10.00%

CCP-V2-1
11.00%

CCQU-2-F
1.50%

CCQU-3-F
8.00%

PUQU-3-F
11.00%

is purified using the process according to the invention.

Example 44

A liquid-crystalline mixture, for example for FFS applications, of the composition

BCH-32
4.50%

CC-3-V
23.50%

CCH-301
4.00%

CCY-3-O2
4.00%

CCY-3-O3
7.00%

CCY-4-O2
8.00%

CLY-3-O2
8.00%

CPY-2-O2
7.00%

CPY-3-O2
11.00%

CY-3-O2
11.00%

PY-3-O2
12.00%

is purified using the process according to the invention.

Example 45

A liquid-crystalline mixture, for example for IPS applications, of the composition

APUQU-2-F
2.50%

APUQU-3-F
4.50%

CC-3-V
42.00%

CCGU-3-F
4.00%

CCP-30CF₃
5.00%

CCP-3-1
3.00%

CCP-V-1
10.00%

CCP-V2-1
2.50%

CCQU-3-F
6.00%

CPGU-3-OT
5.00%

PGUQU-3-F
4.50%

PGUQU-4-F
3.50%

PPGU-3-F
0.50%

PUQU-3-F
7.00%

is purified using the process according to the invention.

Example 46

A liquid-crystalline mixture, for example for IPS applications, of the composition

BCH-32
2.99%

CCH-303
1.49%

CCH-34
12.93%

CCH-501
5.97%

CCY-2-1
5.97%

CCY-3-1
5.97%

CCY-3-O2
5.97%

CCY-3-O3
5.97%

CCY-4-O2
5.97%

CCY-5-O2
2.99%

CPY-2-O2
6.97%

CPY-3-O2
6.97%

CY-3-O2
14.93%

CY-5-O2
9.46%

PCH-302
4.98%

RM-41
0.30%

S-4011
0.17%

is purified using the process according to the invention.

Example 47

A liquid-crystalline mixture, for example for PM-VA applications, of the composition

CPY-3-O2
8.00%

CPY-2-O2
8.00%

CH-43
3.00%

CH-35
3.00%

CH-33
3.00%

CCY-5-O2
5.50%

CCY-4-O2
6.50%

CCY-3-O3
6.50%

CCY-3-O2
6.50%

CCPC-35
5.00%

CCPC-34
5.00%

CCPC-33
5.00%

CC-4-V
4.50%

CY-3-O4
15.50%

Y-4O-O4
15.00%

is purified using the process according to the invention.

Example 48

A liquid-crystalline mixture, for example for PS-FFS applications, of the composition

APUQU-2-F
2.49%

APUQU-3-F
6.98%

CC-3-V
24.94%

CC-3-V1
7.98%

CCGU-3-F
3.49%

CCP-30CF₃
4.99%

CCP-V-1
5.99%

CCP-V2-1
13.97%

CCQU-3-F
9.98%

PCH-302
6.48%

PGUQU-3-F
3.99%

PGUQU-4-F
3.99%

PPGU-3-F
0.49%

PUQU-3-F
3.99%

RM-41
0.25%

is purified using the process according to the invention.

Example 49

A liquid-crystalline mixture, for example for FFS applications, of the composition

APUQU-2-F
3.50%

APUQU-3-F
6.00%

CC-3-V
45.50%

CCP-30CF₃
5.00%

CCP-3-1
3.00%

CCP-V2-1
8.50%

CPGU-3-OT
6.00%

PGUQU-3-F
5.00%

PGUQU-4-F
5.00%

PPGU-3-F
0.50%

PUQU-3-F
12.00%

is purified using the process according to the invention.

Example 50

A liquid-crystalline mixture, for example for FFS applications, of the composition

APUQU-2-F
4.00%

APUQU-3-F
6.00%

CC-3-V
45.00%

CCP-20CF₃
4.00%

CCP-30CF₃
4.00%

CCP-40CF₃
2.50%

CPGP-5-2
7.00%

CPGP-5-3
7.00%

PGP-2-3
5.50%

PGP-2-4
5.00%

PPGU-3-F
0.50%

PUQU-3-F
9.50%

is purified using the process according to the invention.

Example 51

A liquid-crystalline mixture, for example for TN applications, of the composition

CC-3-V
49.50%

CCP-3-1
1.50%

CCP-V-1
6.00%

CPGU-3-OT
7.00%

PGP-2-3
8.50%

PGP-2-4
5.50%

PGUQU-3-F
7.00%

PGUQU-4-F
4.00%

PP-1-2V1
2.50%

PPGU-3-F
0.50%

PUQU-3-F
8.00%

is purified using the process according to the invention.

Example 52

A liquid-crystalline mixture, for example for PA-VA applications, of the composition

BCH-32
6.00%

CCH-23
18.00%

CCH-34
8.00%

CCP-3-1
12.00%

CCP-3-3
3.00%

CCY-3-O2
6.00%

CPY-2-O2
6.00%

CPY-3-O2
7.00%

CY-3-O2
14.00%

CY-3-O4
8.00%

CY-5-O2
9.00%

PYP-2-3
3.00%

is purified using the process according to the invention.

Example 53

A liquid-crystalline mixture, for example for FFS applications, of the composition

CCQU-3-F
8.00%

CCP-V2-1
7.00%

CCP-V-1
10.00%

CC-3-V
32.50%

PGP-2-2V
10.00%

PUQU-3-F
12.50%

PGUQU-5-F
4.00%

PGUQU-4-F
5.00%

PGUQU-3-F
5.00%

APUQU-3-F
6.00%

is purified using the process according to the invention.

Example 54

A liquid-crystalline mixture, for example for FFS applications, of the composition

APUQU-3-F
1.00%

BCH-3F.F.F
17.00%

CC-3-V
35.00%

CC-3-V1
6.00%

CCP-3F.F.F
2.50%

CCP-V-1
12.00%

CCP-V2-1
8.50%

CPGP-5-2
3.00%

CPGP-5-3
2.50%

DPGU-4-F
4.00%

PGUQU-3-F
4.00%

PGUQU-4-F
2.00%

PGUQU-5-F
2.00%

PPGU-3-F
0.50%

is purified using the process according to the invention.

Example 55

A liquid-crystalline mixture, for example for PM-VA applications, of the composition

CH-35
3.00%

CH-43
3.00%

CLY-3-O2
3.25%

CPY-2-O2
10.00%

CY-3-O2
15.00%

CH-33
3.00%

CCY-5-O2
4.00%

CCY-4-O2
6.00%

CCY-3-O3
6.00%

CCY-3-O2
6.00%

CCY-3-1
2.00%

CCY-2-1
8.75%

CY-3-O4
20.00%

CCPC-33
3.75%

CCH-34
4.75%

CCPC-34
1.50%

is purified using the process according to the invention.

Example 56

A liquid-crystalline mixture, for example for PS-FFS applications, of the composition

APUQU-3-F
5.99%

BCH-3F.F
5.49%

CC-3-V
24.94%

CC-3-V1
7.98%

CCGU-3-F
5.98%

CCP-30CF₃
2.99%

CCP-V-1
16.96%

CCP-V2-1
13.96%

CCQU-3-F
2.49%

CCQU-5-F
4.99%

PGUQU-4-F
4.49%

PPGU-3-F
0.50%

PUQU-3-F
2.99%

RM-41
0.25%

is purified using the process according to the invention.

The following mixtures are likewise purified using the process according to the invention:

Example 57

CY-3-O4
14.00%
Clearing point [° C.]:
106.0

CCY-3-O2
8.00%
Δn [589 nm, 20° C.]:
0.1597

CCY-4-O2
7.00%
ε_∥ [1 kHz, 20° C.]:
3.9

CCY-3-O3
6.00%
ε_⊥ [1 kHz, 20° C.]:
8.5

CCY-5-O2
5.00%
Δε [1 kHz, 20° C.]:
−4.6

CPY-2-O2
10.00%
K₁[pN, 20° C.]:
16.6

CPY-3-O2
8.00%
K₃[pN, 20° C.]:
17.6

PYP-2-3
14.00%
V₀[20° C., V]:
2.08

PYP-2-4
14.00%
γ₁[mPa · s, 20° C.]:
316

CCH-301
8.00%

PGP-2-3
6.00%

Example 57a

The mixture according to Example 57 additionally comprises 0.025% of STAB-35.

Example 58

CY-3-O2
13.00%
Clearing point [° C.]:
111

CY-5-O2
9.00%

CY-5-O4
8.00%

CCY-3-O2
6.00%

CCY-3-O3
5.00%

CCY-4-O2
5.00%

CCY-5-O2
3.50%

CPY-2-O2
7.00%

CPY-3-O2
3.00%

CCH-34
17.50%

CCP-3-1
4.50%

CH-35
3.00%

CH-43
3.00%

CH-45
0.50%

CCPC-33
3.00%

CCPC-34
3.00%

CCPC-35
3.00%

Example 59

CC-3-V
37.00%
Clearing point [° C.]:
75.2

CCY-3-O1
5.00%
Δn [589 nm, 20° C.]:
0.1014

CCY-3-O2
5.00%
Δε [1 kHz, 20° C.]:
−3.7

CCY-4-O2
4.00%
ε_∥ [1 kHz, 20° C.]:
3.7

CLY-3-O2
7.00%
ε_⊥ [1 kHz, 20° C.]:
7.4

CPY-2-O2
9.00%
K₁[pN, 20° C.]:
13.2

CPY-3-O2
10.00%
K₃[pN, 20° C.]:
15.2

CY-3-O2
11.50%
V₀[20° C., V]:
2.13

PY-3-O2
11.50%

Example 60

CC-3-V
40.00%
Clearing point [° C.]:
100.3

CC-3-V1
5.00%
Δn [589 nm, 20° C.]:
0.1059

CCP-30CF3
4.00%
Δε [1 kHz, 20° C.]:
3.9

CCP-V-1
13.00%
ε_∥ [1 kHz, 20° C.]:
6.7

CCP-V2-1
4.00%
ε_⊥ [1 kHz, 20° C.]:
2.8

CCVC-3-V
4.00%
K₁[pN, 20° C.]:
14.9

CDUQU-3-F
2.00%
K₃[pN, 20° C.]:
17.0

CPGP-5-2
5.00%
V₀[20° C., V]:
2.07

CPGP-5-3
1.50%
γ₁[mPa · s, 20° C.]:
74

DGUQU-4-F
2.00%

DPGU-4-F
3.00%

PGP-2-3
4.00%

PGP-2-4
4.00%

PPGU-3-F
0.50%

PUQU-3-F
8.00%

Example 61

CY-3-O4
23.00%
Clearing point [° C.]:
71.3

CCY-3-O1
6.00%
Δn [589 nm, 20° C.]:
0.1197

CCY-3-O2
6.00%
Δε [1 kHz, 20° C.]:
−7.0

CCY-3-O3
7.00%
ε_∥ [1 kHz, 20° C.]:
5.0

CCY-4-O2
7.00%
ε_⊥ [1 kHz, 20° C.]:
12.0

CCY-5-O2
5.00%
K₁[pN, 20° C.]:
11.7

CPY-2-O2
8.00%
K₃[pN, 20° C.]:
13.2

CPY-3-O2
10.00%
V₀[20° C., V]:
1.44

CCY-2-1
3.50%
γ₁[mPa · s, 20° C.]:
246

PYP-2-4
8.50%

PY-1-O4
8.00%

Y-4O-O4
8.00%

Example 62

PUQU-3-F
9.00%
Clearing point [° C.]:
75.9

PGUQU-3-F
7.00%
Δn [589 nm, 20° C.]:
0.1131

PGUQU-4-F
5.00%
Δε [1 kHz, 20° C.]:
6.1

CPGU-3-OT
4.50%
K₁[pN, 20° C.]:
11.9

PPGU-3-F
0.50%
K₃[pN, 20° C.]:
13.6

CDUQU-3-F
0.05%
V₀[20° C.]:
1.14

CC-3-V
49.95%
γ₁[mPa · s, 20° C.]:
57

CCP-V-1
12.00%

PGP-2-3
8.00%

PGP-2-4
4.00%

Example 63

PUQU-3-F
8.00%
Clearing point [° C.]:
75.4

PGUQU-3-F
7.00%
Δn [589 nm, 20° C.]:
0.1191

PGUQU-4-F
4.00%
Δε [1 kHz, 20° C.]:
6.1

PPGU-3-F
0.50%
K₁[pN, 20° C.]:
12.6

CPGU-3-OT
7.00%
K₃[pN, 20° C.]:
12.5

CC-3-V
49.50%
V₀[20° C., V]:
1.52

CCP-3-1
1.50%
γ₁[mPa · s, 20° C.]:
57

CCP-V-1
6.00%

PP-1-2V1
2.50%

PGP-2-3
8.50%

PGP-2-4
5.50%

Example 64

CY-3-O4
12.00%
Clearing point [° C.]:
102.5

CY-5-O4
12.00%
Δn [589 nm, 20° C.]:
0.1605

CCY-3-O2
8.00%
Δε [1 kHz, 20° C.]:
−5.6

CCY-4-O2
7.00%
ε_∥ [1 kHz, 20° C.]:
4.0

CCY-3-O3
7.00%
ε_⊥ [1 kHz, 20° C.]:
9.6

CPY-2-O2
12.00%
K₁[pN, 20° C.]:
16.9

CPY-3-O2
12.00%
K₃[pN, 20° C.]:
17.1

PYP-2-3
15.00%
V₀[V, 20° C.]:
1.84

PYP-2-4
15.00%
γ₁[mPa · s, 20° C.]:
401

Example 65

BCH-32
8.00%
Clearing point [° C.]:
80.6

CC-3-V
28.00%
Δn [589 nm, 20° C.]:
0.1194

CCY-3-O1
5.00%
Δε [1 kHz, 20° C.]:
−3.9

CCY-3-O2
6.00%
ε_∥ [1 kHz, 20° C.]:
4.0

CLY-3-O2
8.00%
ε_⊥ [1 kHz, 20° C.]:
7.9

CPY-2-O2
10.00%
K₁[pN, 20° C.]:
13.0

CPY-3-O2
10.00%
K₃[pN, 20° C.]:
14.0

PGIY-2-O4
8.00%
V₀[20° C.]:
2.0

PY-3-O2
9.00%
γ₁[mPa · s, 20° C.]:
120

Y-4O-O4
8.00%

Example 66

CY-3-O2
15.00%
Clearing point [° C.]:
80.1

CY-5-O2
7.00%
Δn [589 nm, 20° C.]:
0.1026

CCY-3-O1
4.00%
Δε [1 kHz, 20° C.]:
−3.5

CCY-3-O2
2.00%
ε_∥ [1 kHz, 20° C.]:
3.5

CCY-3-O3
6.00%
ε_⊥ [1 kHz, 20° C.]:
7.0

CCY-4-O2
6.00%
K₁[pN, 20° C.]:
13.9

CPY-2-O2
8.00%
K₃[pN, 20° C.]:
13.8

CPY-3-O2
8.00%
V₀[20° C.]:
2.11

PYP-2-4
6.50%
γ₁[mPa · s, 20° C.]:
132

CCH-23
15.00%

CCH-34
5.00%

CCH-35
4.00%

CCH-301
6.00%

BCH-32
7.50%

Example 67

APUQU-2-F
3.00%
Clearing point [° C.]:
100.1

APUQU-3-F
2.50%
Δn [589 nm, 20° C.]:
0.1046

CC-3-2V1
3.00%

CC-3-V
37.00%

CC-3-V1
5.00%

CCP-V-1
13.00%

CCP-V2-1
7.50%

CCVC-3-V
5.00%

CDUQU-3-F
2.00%

CPGP-5-2
4.00%

DGUQU-4-F
2.00%

PGP-2-3
5.00%

PGP-2-4
4.50%

PPGU-3-F
0.50%

PUQU-3-F
6.00%

Example 68

PCH-3
6.00%
Clearing point [° C.]:
86.0

CC-5-V
20.00%
Δn [589 nm, 20° C.]:
0.1612

PCH-301
14.00%
Δε [1 kHz, 20° C.]:
1.8

PCH-302
15.00%
ε_∥ [1 kHz, 20° C.]:
4.7

PPTUI-3-2
15.00%
ε_⊥ [1 kHz, 20° C.]:
2.9

PPTUI-3-4
15.00%

CCP-V-1
8.00%

CCP-V2-1
7.00%

Example 68a

The mixture according to Example 68 additionally comprises 2% of R-5011.

Example 69

CY-3-O4
13.00%
Clearing point [° C.]:
92.0

CC-4-V
17.00%
Δn [589 nm, 20° C.]:
0.1598

CC-3-V1
8.00%
Δε [1 kHz, 20° C.]:
−1.9

CCP-V-1
12.00%
ε_∥ [1 kHz, 20° C.]:
3.4

CCP-V2-1
12.00%
ε_⊥ [1 kHz, 20° C.]:
5.3

PPTUI-3-2
10.00%

PTP-302FF
10.00%

PTP-502FF
10.00%

CPTP-302FF
4.00%

CPTP-502FF
4.00%

Example 70

CY-3-O4
12.50%
Clearing point [° C.]:
75.4

CY-5-O2
10.00%
Δn [589 nm, 20° C.]:
0.1077

CCY-3-O1
4.50%
Δε [1 kHz, 20° C.]:
−3.2

CCY-3-O2
6.00%
ε_∥ [1 kHz, 20° C.]:
3.5

CLY-3-O2
7.00%
ε_⊥ [1 kHz, 20° C.]:
6.7

CPY-2-O2
10.00%
V₀[20° C.]:
2.30

CPY-3-O2
10.00%
γ₁[mPa · s, 20° C.]:
112.9

CC-3-V
27.40%

BCH-32
3.50%

PP-1-2V1
9.00%

CDUQU-3-F
0.10%

Example 71

CY-3-O2
15.00%
Clearing point [° C.]:
75.8

CY-3-O4
2.50%
Δn [589 nm, 20° C.]:
0.1021

CY-5-O2
10.00%
Δε [1 kHz, 20° C.]:
−3.2

CCY-3-O1
5.00%
ε_∥ [1 kHz, 20° C.]:
3.6

CCY-4-O2
5.00%
ε_⊥ [1 kHz, 20° C.]:
6.8

CPY-2-O2
7.00%
K₁[pN, 20° C.]:
13.4

CPY-3-O2
7.00%
K₃[pN, 20° C.]:
13.5

CCY-2-1
6.00%
V₀[20° C.]:
2.14

CCY-3-1
6.00%
γ₁[mPa · s, 20° C.]:
128

CCH-23
15.50%

CCH-34
5.00%

BCH-32
13.00%

PP-1-4
3.00%

Example 72

CC-3-V
33.00%
Clearing point [° C.]:
80.2

CCY-3-O1
6.00%
Δn [589 nm, 20° C.]:
0.1116

CCY-3-O2
8.00%
Δε [1 kHz, 20° C.]:
−4.1

CCY-4-O2
2.50%
ε_∥ [1 kHz, 20° C.]:
3.7

CPY-2-O2
8.00%
ε_⊥ [1 kHz, 20° C.]:
7.8

CPY-3-O2
12.00%
K₁[pN, 20° C.]:
14.5

CLY-3-O2
8.00%
K₃[pN, 20° C.]:
16.1

PY-1-O4
1.50%
V₀[20° C.]:
2.09

PY-3-O2
10.00%
γ₁[mPa · s, 20° C.]:
119

PY-4-O2
8.00%

CY-3-O2
3.00%

Example 73

BCH-32
2.00%
Clearing point [° C.]:
79.7

BCH-52
2.50%
Δn [589 nm, 20° C.]:
0.1036

CCY-2-1
9.50%
Δε [1 kHz, 20° C.]:
−3.7

CCY-3-1
9.50%
ε_∥ [1 kHz, 20° C.]:
4.8

CCY-3-O2
10.00%
ε_⊥ [1 kHz, 20° C.]:
8.5

CCY-5-O2
10.00%
K₁[pN, 20° C.]:
13.9

CPY-2-O2
12.00%
K₃[pN, 20° C.]:
14.1

CY-3-O4
15.00%
V₀[20° C.]:
2.06

CY-5-O4
15.50%

PCH-53
10.50%

APUQU-3-F
3.50%

Example 74

BCH-32
0.50%
Clearing point [° C.]:
79.2

BCH-52
0.50%
Δn [589 nm, 20° C.]:
0.1037

CCY-2-1
5.00%
Δε [1 kHz, 20° C.]:
−3.8

CCY-3-1
5.00%
ε_∥ [1 kHz, 20° C.]:
6.2

CCY-3-O2
13.00%
ε_⊥ [1 kHz, 20° C.]:
10.0

CCY-5-O2
13.00%
K₁[pN, 20° C.]:
14.8

CPY-2-O2
12.00%
K₃[pN, 20° C.]:
14.5

CY-3-O4
19.50%
V₀[20° C.]:
2.12

CY-5-O4
19.50%

PCH-53
5.00%

APUQU-3-F
7.00%

Example 75

CY-3-O2
27.50%
Clearing point [° C.]:
80.0

CCY-4-O2
26.50%
Δn [589 nm, 20° C.]:
0.0911

CPY-3-O2
13.50%
Δε [1 kHz, 20° C.]:
−3.6

CC-3-V
25.00%
ε_∥ [1 kHz, 20° C.]:
4.4

CCH-34
5.00%
ε_⊥ [1 kHz, 20° C.]:
8.1

APUQU-3-F
2.50%

Example 76

APUQU-3-F
7.00%
Clearing point [° C.]:
88.0

CC-3-V
35.00%
Δn [589 nm, 20° C.]:
0.1150

CC-3-V1
5.00%
Δε [1 kHz, 20° C.]:
−2.2

CCP-30CF₃
5.00%
ε_∥ [1 kHz, 20° C.]:
1.0

CCP-V-1
12.00%
ε_⊥ [1 kHz, 20° C.]:
3.1

CPGP-5-2
1.00%
K₁[pN, 20° C.]:
14.3

DPGU-4-F
8.00%
K₃[pN, 20° C.]:
14.7

PGP-2-2V
12.00%
V₀[20° C.]:
1.53

PUQU-3-F
10.00%
γ₁[mPa · s, 20° C.]:
66

CC-2-V1
5.00%

Example 77

BCH-32
6.00%
Clearing point [° C.]:
101.6

CC-3-V
39.50%
Δn [589 nm, 20° C.]:
0.1111

CCP-3-1
6.50%
Δε [1 kHz, 20° C.]:
6.9

CCP-30CF₃
1.00%
K₁[pN, 20° C.]:
15.3

CCP-V-1
16.00%
K₃[pN, 20° C.]:
17.3

CDUQU-3-F
9.50%
V₀[20° C.]:
1.57

CPGP-5-2
3.00%
γ₁[mPa · s, 20° C.]:
89

CPGP-5-3
1.00%
LTS [bulk, −30° C.]:
>1000 h

PGU-2-F
7.50%

PGUQU-3-F
3.50%

PGUQU-4-F
2.00%

PGUQU-5-F
3.50%

PPGU-3-F
1.00%

Example 78

BCH-32
5.00%
Clearing point [° C.]:
102.5

CC-3-V
35.00%
Δn [589 nm, 20° C.]:
0.1207

CC-3-V1
5.00%
Δε [1 kHz, 20° C.]:
7.3

CCP-V-1
15.00%
K₁[pN, 20° C.]:
15.2

CDUQU-3-F
8.00%
K₃[pN, 20° C.]:
16.6

CPGP-4-3
3.00%
V₀[20° C.]:
1.53

CPGP-5-2
3.00%
γ₁[mPa · s, 20° C.]:
96

CPGP-5-3
3.00%
LTS [bulk, −30° C.]:
>1000 h

CPGU-3-OT
4.50%

PGU-2-F
5.50%

PGU-3-F
5.50%

PGUQU-3-F
2.50%

PPGU-3-F
0.50%

PUQU-3-F
4.50%

Example 79

BCH-32
6.00%
Clearing point [° C.]:
101

CC-3-V
34.50%
Δn [589 nm, 20° C.]:
0.1210

CC-3-V1
6.00%
Δε [1 kHz, 20° C.]:
7.3

CCP-V-1
15.00%
K₁[pN, 20° C.]:
15.1

CDUQU-3-F
6.50%
K₃[pN, 20° C.]:
16.5

CPGP-4-3
3.00%
γ₁[mPa · s, 20° C.]:
92

CPGP-5-2
3.00%
LTS [bulk, −30° C.]:
>1000 h

CPGP-5-3
1.50%

CPGU-3-OT
5.00%

PGU-2-F
5.50%

PGU-3-F
4.50%

PGUQU-3-F
4.00%

PPGU-3-F
0.50%

PUQU-3-F
5.00%

Example 80

APUQU-3-F
5.00%
Clearing point [° C.]:
104.4

BCH-3F.F
2.50%
Δn [589 nm, 20° C.]:
0.0947

CC-3-V
40.00%
Δε [1 kHz, 20° C.]:
7.2

CCGU-3-F
6.00%
K₁[pN, 20° C.]:
15.5

CCP-3-1
2.50%
K₃[pN, 20° C.]:
18.3

CCP-30CF₃
7.00%
V₀[20° C.]:
1.55

CCP-V-1
12.00%
γ₁[mPa · s, 20° C.]:
93

CCP-V2-1
6.00%

CDUQU-3-F
10.00%

CPGP-5-2
2.00%

DPGU-4-F
2.50%

PPGU-3-F
0.50%

PUQU-3-F
4.00%

Example 81

APUQU-3-F
5.00%
Clearing point [° C.]:
104.5

CC-3-V
39.00%
Δn [589 nm, 20° C.]:
0.0942

CCGU-3-F
10.00%
Δε [1 kHz, 20° C.]:
7.2

CCP-3-1
3.00%
K₁[pN, 20° C.]:
15.3

CCP-30CF₃
7.50%
K₃[pN, 20° C.]:
18.5

CCP-V-1
13.00%
V₀[20° C.]:
1.54

CCP-V2-1
5.00%
γ₁[mPa · s, 20° C.]:
94

CDUQU-3-F
8.00%

CPGP-5-2
2.00%

PPGU-3-F
0.50%

PUQU-3-F
7.00%

Example 82

APUQU-3-F
5.00%
Clearing point [° C.]:
104.5

CC-3-V
34.50%
Δn [589 nm, 20° C.]:
0.0940

CC-3-V1
4.50%
Δε [1 kHz, 20° C.]:
7.3

CCGU-3-F
10.00%
K₁[pN, 20° C.]:
15.5

CCP-3-1
3.00%
K₃[pN, 20° C.]:
18.7

CCP-30CF₃
7.50%
V₀[20° C.]:
1.54

CCP-V-1
11.50%
γ₁[mPa · s, 20° C.]:
97

CCP-V2-1
4.00%

CCQU-3-F
4.00%

CDUQU-3-F
6.50%

CPGP-5-2
2.00%

PPGU-3-F
0.50%

PUQU-3-F
7.00%

Example 83

BCH-3F.F.F
12.00%
Clearing point [° C.]:
101.2

CC-3-V
8.00%
Δn [589 nm, 20° C.]:
0.1079

CC-3-V1
9.00%
Δε [1 kHz, 20° C.]:
6.8

CC-4-V
10.00%
K₁[pN, 20° C.]:
14.2

CCGU-3-F
4.00%
K₃[pN, 20° C.]:
17.0

CCP-1F.F.F
4.50%
V₀[20° C.]:
1.53

CCP-30CF₃
8.00%
γ₁[mPa · s, 20° C.]:
100

CCP-3F.F.F
8.00%

CCP-V-1
13.00%

CCP-V2-1
6.00%

CPGP-5-2
3.00%

CPGU-3-OT
1.50%

PGP-2-2V
3.00%

PPGU-3-F
1.00%

PUQU-3-F
9.00%

Example 84

APUQU-2-F
5.50%
Clearing point [° C.]:
80.5

APUQU-3-F
3.00%
Δn [589 nm, 20° C.]:
0.1017

CC-3-V
36.00%
Δε [1 kHz, 20° C.]:
9.2

CC-3-V1
6.50%
ε_∥ [1 kHz, 20° C.]:
12.9

CCP-30CF₃
8.00%
ε_⊥ [1 kHz, 20° C.]:
3.7

CCP-V-1
11.50%
K₁[pN, 20° C.]:
11.8

CDUQU-3-F
5.00%
K₃[pN, 20° C.]:
12.8

DPGU-4-F
5.50%
V₀[20° C.]:
1.20

PGP-2-2V
2.00%
γ₁[mPa · s, 20° C.]:
53

PGU-2-F
7.50%

PUQU-3-F
9.50%

Example 84a

The mixture according to Example 84 additionally comprises 0.4% of RM-1.

Example 85

BCH-32
3.00%
Clearing point [° C.]:
109.8

CCH-23
15.00%
Δn [589 nm, 20° C.]:
0.1028

CCH-34
3.00%
Δε [1 kHz, 20° C.]:
−3.7

CCH-35
7.00%
ε_∥ [1 kHz, 20° C.]:
3.3

CCP-3-1
7.00%
ε_⊥ [1 kHz, 20° C.]:
7.0

CCY-3-1
8.00%
K₁[pN, 20° C.]:
20.4

CCY-3-O2
12.00%
K₃[pN, 20° C.]:
20.6

CCY-4-O2
10.00%

CCY-5-O2
5.50%

CPY-2-O2
5.00%

CPY-3-O2
11.00%

CY-3-O2
8.00%

PY-3-O2
5.50%

Example 86

CC-3-V1
10.00%
Clearing point [° C.]:
74.6

CCH-23
18.50%
Δn [589 nm, 20° C.]:
0.1032

CCH-35
8.00%
Δε [1 kHz, 20° C.]:
−3.0

CCP-3-1
7.00%
ε_∥ [1 kHz, 20° C.]:
3.4

CCY-3-O2
12.00%
ε_⊥ [1 kHz, 20° C.]:
6.3

CPY-3-O2
10.50%
K₁[pN, 20° C.]:
15.0

CY-3-O2
15.50%
K₃[pN, 20° C.]:
16.1

PY-3-O2
10.50%
V₀[20° C.]:
2.45

PYP-2-3
8.00%
γ₁[mPa · s, 20° C.]:
103

Example 86a

The mixture from Example 86 additionally comprises 0.001% of Irganox® 1076 (octadecyl 3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, BASF) and 0.3% of RM-1.

Example 87

CDUQU-3-F
7.00%
Clearing point [° C.]:
100

CCP-V-1
2.00%
Δn [589 nm, 20° C.]:
0.0714

CCQU-3-F
5.00%
Δε [1 kHz, 20° C.]:
8.3

CCQU-5-F
5.00%
ε_∥ [1 kHz, 20° C.]:
12.0

CCZU-3-F
13.50%
ε_⊥ [1 kHz, 20° C.]:
3.8

CCZU-5-F
4.00%
K₁[pN, 20° C.]:
11.4

PUQU-3-F
1.00%
K₃[pN, 20° C.]:
15.8

CC-5-V
7.00%
V₀[20° C.]:
1.23

CCG-V-F
7.50%
γ₁[mPa · s, 20° C.]:
118

CCH-301
14.00%

CCP-2F.F.F
5.00%

CCP-30CF₃.F
7.00%

CCP-3F.F.F
7.00%

CCP-5F.F.F
7.00%

CCPC-33
1.50%

CCPC-34
2.00%

CH-33
1.50%

CH-35
1.50%

CH-43
1.50%

Example 88

APUQU-2-F
8.00%
Clearing point [° C.]:
88.9

APUQU-3-F
8.00%
Δn [589 nm, 20° C.]:
0.0987

CC-3-V
30.00%
Δε [1 kHz, 20° C.]:
5.9

CC-3-V1
8.50%
ε_∥ [1 kHz, 20° C.]:
8.9

CCP-3-1
4.00%
ε_⊥ [1 kHz, 20° C.]:
2.9

CCP-V-1
16.00%
K₁[pN, 20° C.]:
13.4

CCP-V2-1
11.00%
K₃[pN, 20° C.]:
16.1

PP-1-2V1
6.00%
V₀[20° C.]:
1.59

PUQU-3-F
8.50%
γ₁[mPa · s, 20° C.]:
56

Example 89

CC-3-V
28.50%
Clearing point [° C.]:
74.6

CC-3-V1
7.00%
Δn [589 nm, 20° C.]:
0.1040

CCY-3-O2
12.50%
Δε [1 kHz, 20° C.]:
−3.0

CCY-4-O2
5.25%
ε_∥ [1 kHz, 20° C.]:
3.5

CPY-3-O2
9.75%
ε_⊥ [1 kHz, 20° C.]:
6.5

CY-3-O2
15.00%
K₁[pN, 20° C.]:
13.2

CY-3-O4
4.75%
K₃[pN, 20° C.]:
15.5

CY-5-O2
1.00%
V₀[20° C.]:
2.40

PCH-301
3.25%
γ₁[mPa · s, 20° C.]:
98

PPGU-3-F
0.50%

PYP-2-3
12.50%

Example 89a

The mixture from Example 89 additionally comprises 0.001% of Irganox® 1076 (octadecyl 3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, BASF) and 0.3% of RM-1.

Example 90

CC-3-V
15.00%
Clearing point [° C.]:
74.4

CC-3-V1
9.00%
Δn [589 nm, 20° C.]:
0.1086

CCH-23
8.00%
Δε [1 kHz, 20° C.]:
−3.2

CCH-34
7.50%
ε_∥ [1 kHz, 20° C.]:
3.5

CCY-3-O2
10.00%
ε_⊥ [1 kHz, 20° C.]:
6.7

CCY-5-O2
8.00%
K₁[pN, 20° C.]:
14.3

CPY-2-O2
3.00%
K₃[pN, 20° C.]:
15.7

CPY-3-O2
8.50%
V₀[20° C.]:
2.33

CY-3-O2
7.00%
γ₁[mPa · s, 20° C.]:
102

PY-3-O2
16.00%

PYP-2-3
8.00%

Example 90a

The mixture from Example 90 additionally comprises 0.3% of RM-1.

Example 91

CC-3-V
29.00%
Clearing point [° C.]:
103

CC-3-V1
9.00%
Δn [589 nm, 20° C.]:
0.1176

CC-3-2V1
7.00%
Δε [1 kHz, 20° C.]:
4.8

CCP-V-1
7.00%
ε_∥ [1 kHz, 20° C.]:
7.6

CCP-V2-1
7.50%
ε_⊥ [1 kHz, 20° C.]:
2.9

PP-1-2V1
3.00%
K₁[pN, 20° C.]:
18.0

PGP-1-2V
4.00%
K₃[pN, 20° C.]:
19.6

PGP-2-2V
6.00%
V₀[20° C.]:
2.04

PGP-3-2V
4.00%
γ₁[mPa · s, 20° C.]:
82

CCP-30CF₃
5.00%

CCGU-3-F
4.00%

PGUQU-4-F
3.50%

CDUQU-3-F
3.00%

DGUQU-4-F
4.00%

CPGU-3-OT
4.00%

Example 91a

The mixture from Example 91 additionally comprises 0.001% of STAB-35.

Example 92

PGUQU-3-F
8.00%
Clearing point [° C.]:
82.5

PGUQU-4-F
9.00%
Δn [589 nm, 20° C.]:
0.2143

PGUQU-5-F
9.00%
Δε [1 kHz, 20° C.]:
65.8

PGU-2-F
7.00%
ε_∥ [1 kHz, 20° C.]:
73.4

PGU-3-F
8.00%
ε_⊥ [1 kHz, 20° C.]:
7.6

PGP-2-3
8.00%

PGP-2-4
8.00%

ME2N.F
12.00%

ME3N.F
12.00%

BCH-3F.F
7.00%

BCH-5F.F
7.00%

DPGU-4-F
5.00%

Example 93

CC-3-V
10.50%
Clearing point [° C.]:
100.8

CC-3-V1
5.50%
Δn [589 nm, 20° C.]:
0.0999

CCP-V-1
6.50%
Δε [1 kHz, 20° C.]:
9.1

PUQU-3-F
7.00%
ε_∥ [1 kHz, 20° C.]:
12.6

CCGU-3-F
6.00%
ε_⊥ [1 kHz, 20° C.]:
3.5

APUQU-3-F
2.50%
K₁[pN, 20° C.]:
13.4

CCP-30CF₃
8.00%
K₃[pN, 20° C.]:
17.0

CCP-50CF₃
5.00%
V₀[pN, 20° C.]:
1.28

CCP-30CF₃.F
12.00%
γ₁[mPa · s, 20° C.]:
126

CCQU-3-F
10.00%

CCP-1F.F.F
9.00%

CCP-3F.F.F
11.00%

PGP-2-2V
6.00%

CDU-2-F
1.00%

Example 94

CY-3-O2
10.50%
Clearing point [° C.]:
79.7

PY-1-O4
5.00%
Δn [589 nm, 20° C.]:
0.1113

PY-3-O2
7.50%
Δε [1 kHz, 20° C.]:
−4.4

PY-4-O2
4.00%
K₁[pN, 20° C.]:
14.5

CCY-3-O1
5.50%
K₃[pN, 20° C.]:
16.7

CCY-3-O2
5.00%
V₀[20° C.]:
2.05

CCY-4-O2
4.00%

CLY-3-O2
9.00%

CPY-2-O2
9.00%

CPY-3-O2
9.00%

CC-3-V
23.50%

CC-3-V1
7.00%

CBC-33F
1.00%

Example 95

DU-2-N
2.50%
Clearing point [° C.]:
94.0

ME2N.F
8.00%
Δn [589 nm, 20° C.]:
0.2530

ME3N.F
8.00%
Δε [1 kHz, 20° C.]:
47.6

ME4N.F
16.00%
ε_∥ [1 kHz, 20° C.]:
55.7

ME5N.F
8.00%
ε_⊥ [1 kHz, 20° C.]:
8.1

HP-3N.F
5.00%
K₁[pN, 20° C.]:
11.3

HP-4N.F
5.00%
K₃[pN, 20° C.]:
13.8

HP-5N.F
2.50%
V₀[20° C.]:
0.51

PTP-102
5.00%
γ₁[mPa · s, 20° C.]:
464

PPTUI-3-2
20.00%

PPTUI-3-4
20.00%

Example 95a

The mixture according to Example 95 additionally comprises 5% of RM-41.

Example 96

CCY-3-O1
7.50%
Clearing point [° C.]:
81.5

CCY-4-O2
3.50%
Δn [589 nm, 20° C.]:
0.1082

CLY-3-O2
7.00%
Δε [1 kHz, 20° C.]:
−2.7

CPY-2-O2
10.00%
ε_∥ [1 kHz, 20° C.]:
3.4

CPY-3-O2
10.00%
ε_⊥ [1 kHz, 20° C.]:
6.1

PYP-2-3
9.00%
γ₁[mPa · s, 20° C.]:
88

CC-3-V
45.00%
K₁[pN, 20° C.]:
13.4

PY-1-O4
4.00%
K₃[pN, 20° C.]:
15.3

PY-3-O2
2.00%
V₀[20° C., V]:
2.53

Y-4O-O4
2.00%

Example 97

CCY-3-O1
7.50%
Clearing point [° C.]:
81

CCY-4-O2
5.00%
Δn [589 nm, 20° C.]:
0.1054

CLY-3-O2
7.00%
Δε [1 kHz, 20° C.]:
−2.6

CPY-2-O2
10.00%
ε_∥ [1 kHz, 20° C.]:
3.4

CPY-3-O2
8.50%
ε_⊥ [1 kHz, 20° C.]:
6.0

PYP-2-3
9.00%
γ₁[mPa · s, 20° C.]:
86

CC-3-V
45.50%
K₁[pN, 20° C.]:
13.3

PY-1-O4
5.00%
K₃[pN, 20° C.]:
15.1

Y-4O-O4
2.50%
V₀[20° C., V]:
2.54

Example 98

CC-3-2V1
4.00%
Clearing point [° C.]:
100

CC-3-V
37.50%
Δn [589 nm, 20° C.]:
0.1047

CC-3-V1
5.00%
Δε [1 kHz, 20° C.]:
3.9

CCP-V-1
13.00%
ε_∥ [1 kHz, 20° C.]:
6.6

CCP-V2-1
7.50%
ε_⊥ [1 kHz, 20° C.]:
2.7

CCVC-3-V
6.00%
γ₁[mPa · s, 20° C.]:
72

CDUQU-3-F
1.00%
K₁[pN, 20° C.]:
15.1

CPGP-5-2
3.00%
K₃[pN, 20° C.]:
17.4

DGUQU-4-F
2.00%
V₀[20° C., V]:
2.07

PGP-2-3
5.00%

PGP-2-4
3.00%

PGUQU-3-F
4.00%

PGUQU-4-F
3.50%

PPGU-3F
0.50%

PUQU-3F
5.00%

Example 99

APUQU-2-F
1.50%
Clearing point [° C.]:
100

APUQU-3-F
5.00%
Δn [589 nm, 20° C.]:
0.1056

CC-3-2V1
4.00%
Δε [1 kHz, 20° C.]:
4.0

CC-3-V
36.00%
ε_∥ [1 kHz, 20° C.]:
6.8

CC-3-V1
5.00%
ε_⊥ [1 kHz, 20° C.]:
2.8

CCP-V-1
13.00%
γ₁[mPa · s, 20° C.]:
71

CCP-V2-1
9.50%
K₁[pN, 20° C.]:
15.4

CCVC-3-V
4.00%
K₃[pN, 20° C.]:
17.7

CDUQU-3-F
3.00%
V₀[20° C., V]:
2.07

DGUQU-4-F
2.00%

PGP-1-2V
5.50%

PGP-2-2V
7.00%

PPGU-3-F
0.50%

PUQU-3-F
4.00%

Example 100

CC-3-V1
9.00%
Clearing point [° C.]:
74.7

CCH-23
18.00%
Δn [589 nm, 20° C.]:
0.0982

CCH-34
3.00%
Δε [1 kHz, 20° C.]:
−3.4

CCH-35
7.00%
ε_|| [1 kHz, 20° C.]:
3.5

CCP-3-1
5.50%
ε_⊥ [1 kHz, 20° C.]:
6.9

CCY-3-O2
11.50%
γ₁[mPa · s, 20° C.]:
108

CPY-2-O2
8.00%
K₁[pN, 20° C.]:
14.9

CPY-3-O2
11.00%
K₃[pN, 20° C.]:
15.9

CY-3-O2
15.50%
V₀[20° C., V]:
2.28

PY-3-O2
11.50%

Example 100a

The mixture according to Example 100 additionally comprises 0.001% of Irganox® 1076 (octadecyl 3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, BASF) and 0.45% of RM-1.

Example 101

CC-3-V
15.00%
Clearing point [° C.]:
85

CPGP-4-3
2.00%
Δn [589 nm, 20° C.]:
0.1981

CPGP-5-2
2.00%
Δε [1 kHz, 20° C.]:
9.9

CPTP-301
6.00%
ε_|| [1 kHz, 20° C.]:
13.6

DGUQU-4-F
3.00%
ε_⊥ [1 kHz, 20° C.]:
3.7

PCH-301
7.00%
γ₁[mPa · s, 20° C.]:
123

PGP-2-2V
14.50%
K₁[pN, 20° C.]:
15.1

PGUQU-3-F
7.50%
K₃[pN, 20° C.]:
15.1

PGUQU-4-F
7.00%
V₀[20° C., V]:
1.29

PGUQU-5-F
6.00%

PP-1-2V1
12.00%

PTP-102
6.00%

PTP-201
6.00%

PUQU-3-F
6.00%

Example 102

CC-3-V
28.00%
Clearing point [° C.]:
84.8

CC-3-V1
3.00%
Δn [589 nm, 20° C.]:
0.1078

CCP-3-1
3.00%
Δε [1 kHz, 20° C.]:
−4.1

CCY-3-O2
9.00%
ε_|| [1 kHz, 20° C.]:
3.7

CCY-4-O2
9.00%
ε_⊥ [1 kHz, 20° C.]:
7.8

CLY-3-O2
6.00%
γ₁[mPa · s, 20° C.]:
122

CLY-3-O3
6.00%
K₁[pN, 20° C.]:
14.8

CPY-2-O2
7.00%

CPY-3-O2
9.00%

PY-3-O2
8.00%

PY-4-O2
4.00%

PYP-2-4
2.50%

Y-4O-O4
5.50%

Example 102a

The mixture according to Example 102 additionally comprises 0.04% of

embedded image

and

0.01% of

embedded image

Example 103

CC-3-V
28.00%
Clearing point [° C.]:
80

CC-3-V1
5.00%
Δn [589 nm, 20° C.]:
0.1082

CCP-3-1
2.50%
Δε [1 kHz, 20° C.]:
−4.1

CCY-3-O2
10.00%
ε_|| [1 kHz, 20° C.]:
3.8

CCY-4-O2
2.50%
ε_⊥ [1 kHz, 20° C.]:
7.9

CLY-3-O2
6.50%
γ₁[mPa · s, 20° C.]:
113

CLY-3-O3
6.50%
K₁[pN, 20° C.]:
14.5

CPY-2-O2
9.00%

CPY-3-O2
10.00%

PY-3-O2
10.00%

PY-4-O2
5.00%

Y-4O-O4
5.00%

Example 103a

The mixture according to Example 103 additionally comprises 0.04% of

embedded image

and 0.01% of

embedded image

Example 104

CC-3-V
29.00%
Clearing point [° C.]:
75.1

CC-3-V1
5.00%
Δn [589 nm, 20° C.]:
0.1075

CCP-3-1
3.00%
Δε [1 kHz, 20° C.]:
−4.0

CCY-3-O2
10.00%
ε_|| [1 kHz, 20° C.]:
3.8

CLY-3-O2
6.00%
ε_⊥ [1 kHz, 20° C.]:
7.7

CLY-3-O3
6.00%
γ₁[mPa · s, 20° C.]:
103

CPY-2-O2
9.00%
K₁[pN, 20° C.]:
14.3

CPY-3-O2
10.00%

PY-3-O2
10.00%

PY-4-O2
7.00%

Y-4O-O4
5.00%

Example 104a

The mixture from Example 104 additionally comprises 0.04% of

embedded image

and 0.015% of

embedded image

Example 105

CC-3-V
29.00%
Clearing point [° C.]:
80.1

CCY-3-O1
8.00%
Δn [589 nm, 20° C.]:
0.1052

CCY-3-O2
6.00%
Δε [1 kHz, 20° C.]:
−4.7

CCY-4-O2
2.00%
ε_|| [1 kHz, 20° C.]:
3.9

CLY-3-O2
8.50%
ε_⊥ [1 kHz, 20° C.]:
8.7

CLY-3-O3
7.50%
γ₁[mPa · s, 20° C.]:
125

CPY-2-O2
10.00%
K₁[pN, 20° C.]:
14.0

CPY-3-O2
7.50%

CY-3-O2
6.50%

PY-3-O2
10.00%

Y-4O-O4
5.00%

Example 105a

The mixture according to Example 105 additionally comprises 0.04% of

embedded image

and 0.02% of

embedded image

Example 106

CC-3-V
37.00%
Clearing point [° C.]:
75.2

CCY-3-O1
5.00%
Δn [589 nm, 20° C.]:
0.1012

CCY-3-O2
5.00%
Δε [1 kHz, 20° C.]:
−3.8

CCY-4-O2
4.00%
ε_|| [1 kHz, 20° C.]:
3.6

CLY-3-O2
7.00%
ε_⊥ [1 kHz, 20° C.]:
7.5

CPY-2-O2
9.00%
γ₁[mPa · s, 20° C.]:
97

CPY-3-O2
10.00%
K₁[pN, 20° C.]:
13.3

CY-3-O2
12.00%
K₃[pN, 20° C.]:
15.3

PY-3-O2
11.00%
V₀[20° C., V]:
2.12

Example 106a

The mixture according to Example 106 additionally comprises 0.04% of

embedded image

and 0.015% of

embedded image

Example 107

CY-3-O2
15.00%
Clearing point [° C.]:
80.4

CY-5-O2
12.50%
Δn [589 nm, 20° C.]:
0.1038

CCY-3-O1
2.50%
Δε [1 kHz, 20° C.]:
−3.3

CCY-4-O2
5.00%
ε_|| [1 kHz, 20° C.]:
3.5

CPY-2-O2
8.00%
ε_⊥ [1 kHz, 20° C.]:
6.8

CPY-3-O2
8.00%
γ₁[mPa · s, 20° C.]:
137

CCY-2-1
6.00%
K₁[pN, 20° C.]:
14.2

CCY-3-1
6.00%
K₃[pN, 20° C.]:
14.2

CCH-23
15.00%
V₀[20° C., V]:
2.18

CCH-34
5.00%

CCH-301
1.50%

BCH-32
15.50%

Example 107a

The mixture according to Example 107 additionally comprises 0.01% of

embedded image

Example 108

CY-3-O2
15.00%
Clearing point [° C.]:
100

CY-3-O4
20.00%
Δn [589 nm, 20° C.]:
0.0968

CY-5-O2
7.50%
Δε [1 kHz, 20° C.]:
−5.9

CCY-3-O2
6.50%
ε_|| [1 kHz, 20° C.]:
4.0

CCY-3-O3
6.50%
ε_⊥ [1 kHz, 20° C.]:
9.9

CCY-4-O2
6.50%
γ₁[mPa · s, 20° C.]:
324

CCY-5-O2
6.50%
K₁[pN, 20° C.]:
15.1

CPY-2-O2
5.50%
K₃[pN, 20° C.]:
17.2

CPY-3-O2
5.00%
V₀[20° C., V]:
1.80

CC-4-V
3.00%

CH-33
3.00%

CH-35
2.00%

CH-43
3.00%

CH-45
2.00%

CCPC-33
4.00%

CCPC-34
4.00%

Example 109

CY-3-O2
11.00%
Clearing point [° C.]:
101

CY-3-O4
18.00%
Δn [589 nm, 20° C.]:
0.1662

CCY-3-O2
6.00%
Δε [1 kHz, 20° C.]:
−6.1

CCY-3-O3
6.00%
ε_|| [1 kHz, 20° C.]:
4.2

CCY-4-O2
6.00%
ε_⊥ [1 kHz, 20° C.]:
10.3

CCY-5-O2
6.00%
γ₁[mPa · s, 20° C.]:
363

CPY-3-O2
6.00%
K₁[pN, 20° C.]:
16.5

CC-4-V
3.00%
K₃[pN, 20° C.]:
22.00

CPTP-3-1
5.00%
V₀[20° C., V]:
2.00

PTP-302FF
10.00%

PTP-502FF
10.00%

CPTP-302FF
5.00%

CPTP-502FF
5.00%

CCPC-33
3.00%

Example 110

CY-3-O2
8.00%
Clearing point [° C.]:
101

CY-3-O4
13.00%
Δn [589 nm, 20° C.]:
0.0970

CCY-3-O2
6.50%
Δε [1 kHz, 20° C.]:
−2.1

CPY-2-O2
3.50%
ε_|| [1 kHz, 20° C.]:
3.2

CPY-3-O2
8.00%
ε_⊥ [1 kHz, 20° C.]:
5.3

CCH-301
5.00%
γ₁[mPa · s, 20° C.]:
136

CC-4-V
12.00%
K₁[pN, 20° C.]:
14.8

CC-5-V
8.00%
K₃[pN, 20° C.]:
18.3

CCP-V-1
13.00%
V₀[20° C., V]:
3.11

CCP-V2-1
13.00%

BCH-32
5.00%

CCPC-33
5.00%

Example 111

CY-3-O4
12.00%
Clearing point [° C.]:
101

CC-4-V
13.00%
Δn [589 nm, 20° C.]:
0.1660

CC-5-V
9.50%
Δε [1 kHz, 20° C.]:
−2.1

CCP-V-1
10.50%
ε_|| [1 kHz, 20° C.]:
3.4

CCP-V2-1
10.00%
ε_⊥ [1 kHz, 20° C.]:
5.5

PTP-102
3.00%
γ₁[mPa · s, 20° C.]:
151

CPTP-3-1
5.00%
K₁[pN, 20° C.]:
16.2

CPTP-3-2
5.00%
K₃[pN, 20° C.]:
19.8

PTP-302FF
9.50%
V₀[20° C., V]:
3.25

PTP-502FF
9.50%

CPTP-302FF
6.50%

CPTP-502FF
6.50%

Example 112

CY-3-O2
15.00%
Clearing point [° C.]:
71.9

CCY-3-O1
6.00%
Δn [589 nm, 20° C.]:
0.1203

CCY-3-O2
8.00%
Δε [1 kHz, 20° C.]:
−8.1

CCY-3-O3
5.50%
ε_|| [1 kHz, 20° C.]:
5.2

CCY-4-O2
8.00%
ε_⊥ [1 kHz, 20° C.]:
13.3

CCY-5-O2
8.00%
γ₁[mPa · s, 20° C.]:
253

CPY-2-O2
1.50%
K₁[pN, 20° C.]:
13.2

CPY-3-O2
10.00%
K₃[pN, 20° C.]:
15.7

CLY-3-O2
8.00%
V₀[20° C., V]:
1.46

PY-3-O2
6.00%

PY-1-O4
8.00%

PY-4-O2
8.00%

Y-4O-O4
8.00%

Example 113

CC-3-V1
8.00%
Clearing point [° C.]:
75.5

CCH-23
18.00%
Δn [589 nm, 20° C.]:
0.0978

CCH-34
4.00%
Δε [1 kHz, 20° C.]:
−3.5

CCH-35
7.00%
ε_|| [1 kHz, 20° C.]:
3.5

CCP-3-1
5.00%
ε_⊥ [1 kHz, 20° C.]:
6.9

CCY-3-O2
12.50%
γ₁[mPa · s, 20° C.]:
111

CPY-2-O2
8.00%
K₁[pN, 20° C.]:
14.9

CPY-3-O2
11.00%
K₃[pN, 20° C.]:
15.8

CY-3-O2
15.50%
V₀[20° C., V]:
2.26

PY-3-O2
11.00%

Example 113a

The mixture according to Example 113 additionally comprises 0.3% of RM-1.

Example 114

BCH-32
1.50%
Clearing point [° C.]:
74.8

CC-3-V
15.50%
Δn [589 nm, 20° C.]:
0.1035

CC-3-V1
11.00%
Δε [1 kHz, 20° C.]:
−3.1

CCH-23
12.00%
ε_|| [1 kHz, 20° C.]:
3.4

CCH-34
3.50%
ε_⊥ [1 kHz, 20° C.]:
6.5

CCY-3-O2
11.50%
γ₁[mPa · s, 20° C.]:
95

CCY-5-O2
0.50%
K₁[pN, 20° C.]:
14.1

CPY-2-O2
8.50%
K₃[pN, 20° C.]:
15.4

CPY-3-O2
12.00%
V₀[20° C., V]:
2.36

CY-3-O2
9.50%

PY-3-O2
11.50%

PYP-2-3
3.00%

Example 115a

The mixture according to Example 115 additionally comprises 0.001% of Irganox® 1076 (octadecyl 3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, BASF) and 0.3% of RM-1.

Example 116

CC-3-V
30.50%
Clearing point [° C.]:
79.8

CC-3-V1
4.50%
Δn [589 nm, 20° C.]:
0.1022

CCY-3-O1
5.00%
Δε [1 kHz, 20° C.]:
−4.0

CCY-3-O2
6.00%
ε_|| [1 kHz, 20° C.]:
3.6

CCY-3-O3
4.00%
ε_⊥ [1 kHz, 20° C.]:
7.6

CLY-3-O2
8.00%
γ₁[mPa · s, 20° C.]:
114

CPY-2-O2
8.00%
K₁[pN, 20° C.]:
14.5

CPY-3-O2
11.00%
K₃[pN, 20° C.]:
16.7

CY-3-O2
15.00%
V₀[20° C., V]:
2.14

PY-3-O2
8.00%

Example 117

Example 118

CY-3-O2
15.00%
Clearing point [° C.]:
80.5

CY-3-O4
4.00%
Δn [589 nm, 20° C.]:
0.1025

CY-5-O2
6.50%
Δε [1 kHz, 20° C.]:
−3.4

CCY-3-O1
5.00%
ε_|| [1 kHz, 20° C.]:
3.5

CCY-3-O3
2.00%
ε_⊥ [1 kHz, 20° C.]:
6.9

CCY-4-O2
6.00%
γ₁[mPa · s, 20° C.]:
141

CPY-2-O2
7.00%
K₁[pN, 20° C.]:
14.0

CPY-3-O2
7.00%
K₃[pN, 20° C.]:
14.1

CCY-2-1
6.00%
V₀[20° C., V]:
2.16

CCY-3-1
6.00%

CCH-23
15.50%

CCH-34
5.00%

BCH-32
13.00%

PP-1-4
2.00%

Example 119

PGUQU-3-F
4.00%
Clearing point [° C.]:
85.4

CCQU-3-F
7.50%
Δn [589 nm, 20° C.]:
0.1028

PUQU-3-F
15.50%
Δε [1 kHz, 20° C.]:
9.9

APUQU-2-F
4.00%
ε_|| [1 kHz, 20° C.]:
13.3

APUQU-3-F
7.50%
ε_⊥ [1 kHz, 20° C.]:
3.4

CC-3-V
27.50%
γ₁[mPa · s, 20° C.]:
82

CCP-3-V1
6.00%
K₁[pN, 20° C.]:
12.6

CCP-V-1
13.00%
K₃[pN, 20° C.]:
15.3

CCP-V2-1
10.00%
V₀[20° C., V]:
1.19

PPGU-3-F
0.50%

BCH-3F.F
4.50%

Example 119a

The mixture according to Example 119 additionally comprises 0.01% of

embedded image

Example 120

CC-3-V
30.50%
Clearing point [° C.]:
80.1

CC-3-V1
4.50%
Δn [589 nm, 20° C.]:
0.1033

CCY-3-O1
6.00%
Δε [1 kHz, 20° C.]:
−4.0

CCY-3-O2
8.00%
ε_|| [1 kHz, 20° C.]:
3.6

CLY-3-O2
8.00%
ε_⊥ [1 kHz, 20° C.]:
7.6

CPY-2-O2
8.00%
γ₁[mPa · s, 20° C.]:
113

CPY-3-O2
12.00%
K₁[pN, 20° C.]:
14.4

CY-3-O2
15.00%
K₃[pN, 20° C.]:
17.0

PY-3-O2
8.00%
V₀[20° C., V]:
2.16

Example 120a

The mixture from Example 120 additionally comprises 0.3% of

embedded image

Example 121

CC-3-V
28.50%
Clearing point [° C.]:
74.6

CC-3-V1
7.00%
Δn [589 nm, 20° C.]:
0.1040

CCY-3-O2
12.50%
Δε [1 kHz, 20° C.]:
−3.0

CCY-4-O2
5.25%
ε_|| [1 kHz, 20° C.]:
3.5

CPY-3-O2
9.75%
ε_⊥ [1 kHz, 20° C.]:
6.5

CY-3-O2
15.00%
γ₁[mPa · s, 20° C.]:
98

CY-3-O4
4.75%
K₁[pN, 20° C.]:
13.2

CY-5-O2
1.00%
K₃[pN, 20° C.]:
15.5

PCH-301
3.25%
V₀[20° C., V]:
2.4

PPGU-3-F
0.50%

PYP-2-3
12.50%

Example 121a

The mixture from Example 121 additionally comprises 0.001% of Irganox® 1076 (octadecyl 3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate. BASF) and 0.45% of RM-1.

Example 122

CC-3-V
36.50%
Clearing point [° C.]:
75

CC-3-V1
2.00%
Δn [589 nm, 20° C.]:
0.1015

CCY-3-O1
8.00%
Δε [1 kHz, 20° C.]:
−3.7

CCY-3-O2
6.00%
ε_|| [1 kHz, 20° C.]:
3.7

CCY-4-O2
2.50%
ε_⊥ [1 kHz, 20° C.]:
7.3

CLY-3-O2
8.00%
γ₁[mPa · s, 20° C.]:
97

CLY-3-O3
2.00%
K₁[pN, 20° C.]:
13.8

CPY-2-O2
10.00%
K₃[pN, 20° C.]:
15

CPY-3-O2
3.00%
V₀[20° C., V]:
2.14

CY-3-O2
5.50%

PY-3-O2
13.00%

PY-1-O4
3.50%

Example 123

BCH-32
4.50%
Clearing point [° C.]:
75.5

CCH-23
14.00%
Δn [589 nm, 20° C.]:
0.0938

CCH-301
7.00%
Δε [1 kHz, 20° C.]:
−2.5

CCH-34
9.00%
ε_|| [1 kHz, 20° C.]:
3.3

CCH-35
5.50%
ε_⊥ [1 kHz, 20° C.]:
5.8

CCP-3-1
10.00%
γ₁[mPa · s, 20° C.]:
89

CY-3-O2
5.00%
K₁[pN, 20° C.]:
13.5

CY-V-O2
7.00%
K₃[pN, 20° C.]:
14.5

CCY-3-O1
5.00%
V₀[20° C., V]:
2.54

CCY-3-O2
9.00%

CPY-V-O2
10.00%

PCH-302
5.00%

PY-V2-O2
9.00%

Example 124

BCH-32
1.50%
Clearing point [° C.]:
75

CC-3-V
37.00%
Δn [589 nm, 20° C.]:
0.0960

CCP-3-1
8.00%
Δε [1 kHz, 20° C.]:
−2.6

CY-3-O2
15.00%
ε_|| [1 kHz, 20° C.]:
3.4

CCY-3-O1
7.00%
ε_⊥ [1 kHz, 20° C.]:
6.0

CCY-3-O2
9.50%
γ₁[mPa · s, 20° C.]:
79

CPY-3-O2
8.50%
K₁[pN, 20° C.]:
13.0

PCH-302
5.50%
K₃[pN, 20° C.]:
16.0

PY-V-O2
8.00%
V₀[20° C., V]:
2.6

Example 125

BCH-32
1.00%
Clearing point [° C.]:
75

CC-3-V
41.00%
Δn [589 nm, 20° C.]:
0.0948

CCP-3-1
8.50%
Δε [1 kHz, 20° C.]:
−2.3

CY-3-O2
13.00%
ε_|| [1 kHz, 20° C.]:
3.2

CCY-3-O1
6.50%
ε_⊥ [1 kHz, 20° C.]:
5.5

CCY-3-O2
8.50%
γ₁[mPa · s, 20° C.]:
70

CPY-3-O2
6.00%
K₁[pN, 20° C.]:
13.4

PCH-302
7.00%
K₃[pN, 20° C.]:
16.5

PY-1V-O2
8.50%
V₀[20° C., V]:
2.84

Example 126

PY-3-O2
7.50%
Clearing point [° C.]:
74

PY-1V-O2
4.00%
Δn [589 nm, 20° C.]:
0.1094

CY-3-O2
14.50%
Δε [1 kHz, 20° C.]:
−3.0

CCY-3-O1
3.00%
ε_|| [1 kHz, 20° C.]:
3.6

CCY-3-O2
9.00%
ε_⊥ [1 kHz, 20° C.]:
6.6

CPY-2-O2
7.50%
γ₁[mPa · s, 20° C.]:
85

CPY-3-O2
9.00%
K₁[pN, 20° C.]:
12.9

CC-3-V
37.00%
K₃[pN, 20° C.]:
14.6

BCH-32
8.00%
V₀[20° C., V]:
2.34

PPGU-3-F
0.50%

Example 127

PY-3-O2
8.00%
Clearing point [° C.]:
74.5

PY-3V-O2
5.00%
Δn [589 nm, 20° C.]:
0.1086

CY-3-O2
11.50%
Δε [1 kHz, 20° C.]:
−3.0

CCY-3-O1
10.00%
ε_|| [1 kHz, 20° C.]:
3.6

CCY-3-O2
4.00%
ε_⊥ [1 kHz, 20° C.]:
6.6

CPY-2-O2
10.00%
γ₁[mPa · s, 20° C.]:
87

CPY-3-O2
7.00%
K₁[pN, 20° C.]:
12.9

CC-3-V
37.50%
K₃[pN, 20° C.]:
14.1

BCH-32
6.50%
V₀[20° C., V]:
2.30

PPGU-3-F
0.50%

Example 128

PY-V2-O2
12.00%
Clearing point [° C.]:
76

CY-V-O2
9.00%
Δn [589 nm, 20° C.]:
0.1087

CCY-3-O1
9.00%
Δε [1 kHz, 20° C.]:
−3.1

CCY-V2-O2
8.00%
ε_|| [1 kHz, 20° C.]:
3.7

CPY-2-O2
8.00%
ε_⊥ [1 kHz, 20° C.]:
6.9

CPY-V-O2
10.50%
γ₁[mPa · s, 20° C.]:
83

CC-3-V
36.50%
K₁[pN, 20° C.]:
12.4

BCH-32
6.50%
K₃[pN, 20° C.]:
14.7

PPGU-3-F
0.50%
V₀[20° C., V]:
2.28

Example 129

PY-V2-O2
11.50%
Clearing point [° C.]:
75.5

CY-3-O2
11.00%
Δn [589 nm, 20° C.]:
0.1074

CCY-3-O1
9.00%
Δε [1 kHz, 20° C.]:
−3.1

CCY-3-O2
4.00%
ε_|| [1 kHz, 20° C.]:
3.7

CPY-2-O2
12.00%
ε_⊥ [1 kHz, 20° C.]:
6.8

CPY-3-O2
9.00%
γ₁[mPa · s, 20° C.]:
87

CC-3-V
37.00%
K₁[pN, 20° C.]:
13.0

BCH-32
6.00%
K₃[pN, 20° C.]:
14.7

PPGU-3-F
0.50%
V₀[20° C., V]:
2.29

Example 130

PY-1V-O2
10.50%
Clearing point [° C.]:
72

CY-3-O2
18.00%
Δn [589 nm, 20° C.]:
0.1068

CCY-3-O1
7.00%
Δε [1 kHz, 20° C.]:
−3.1

CCY-3-O2
5.00%
ε_|| [1 kHz, 20° C.]:
3.6

CPY-2-O2
7.00%
ε_⊥ [1 kHz, 20° C.]:
6.7

CPY-3-O2
8.00%
γ₁[mPa · s, 20° C.]:
78

CC-3-V
41.00%
K₁[pN, 20° C.]:
12.6

BCH-32
3.00%
K₃[pN, 20° C.]:
14.6

PPGU-3-F
0.50%
V₀[20° C., V]:
2.30

Example 131

PY-V2-O2
10.50%
Clearing point [° C.]:
75

CY-3-O2
10.00%
Δn [589 nm, 20° C.]:
0.1070

CCY-3-O1
6.00%
Δε [1 kHz, 20° C.]:
−3.3

CCY-3-O2
9.00%
ε_|| [1 kHz, 20° C.]:
3.7

CPY-2-O2
8.00%
ε_⊥ [1 kHz, 20° C.]:
7.0

CPY-3-O2
12.00%
γ₁[mPa · s, 20° C.]:
90

CC-3-V
35.00%
K₁[pN, 20° C.]:
12.7

BCH-32
6.50%
K₃[pN, 20° C.]:
14.5

PPGU-3-F
0.50%
V₀[20° C., V]:
2.23

Y-4O-O4
2.50%
LTS (bulk) [−20° C.]:
>1000 h

LTS (bulk) [−30° C.]:
>1000 h

Example 132

PY-1V-O2
10.00%
Clearing point [° C.]:
73.5

CY-3-O2
18.00%
Δn [589 nm, 20° C.]:
0.1084

CCY-3-O1
6.00%
Δε [1 kHz, 20° C.]:
−3.2

CCY-3-O2
6.00%
ε_|| [1 kHz, 20° C.]:
3.6

CPY-2-O2
7.00%
ε_⊥ [1 kHz, 20° C.]:
6.8

CPY-3-O2
9.00%
γ₁[mPa · s, 20° C.]:
82

CC-3-V
40.00%
K₁[pN, 20° C.]:
12.8

BCH-32
3.50%
K₃[pN, 20° C.]:
14.9

PPGU-3-F
0.50%
V₀[20° C., V]:
2.3

Example 133

PY-V2-O2
11.50%
Clearing point [° C.]:
74.5

CY-3-O2
10.00%
Δn [589 nm, 20° C.]:
0.1071

CCY-3-O1
4.50%
Δε [1 kHz, 20° C.]:
−3.4

CCY-3-O2
11.00%
ε_|| [1 kHz, 20° C.]:
3.8

CPY-2-O2
7.00%
ε_⊥ [1 kHz, 20° C.]:
7.1

CPY-3-O2
12.50%
γ₁[mPa · s, 20° C.]:
91

CC-3-V
34.50%
K₁[pN, 20° C.]:
12.7

BCH-32
6.00%
K₃[pN, 20° C.]:
14.6

PPGU-3-F
0.50%
V₀[20° C., V]:
2.2

Y-4O-O4
2.50%

Example 134

PY-V2-O2
14.00%
Clearing point [° C.]:
74.5

CY-3-O2
10.50%
Δn [589 nm, 20° C.]:
0.1075

CCY-3-O1
5.00%
Δε [1 kHz, 20° C.]:
−3.2

CCY-3-O2
10.00%
ε_|| [1 kHz, 20° C.]:
3.6

CPY-2-O2
9.00%
ε_⊥ [1 kHz, 20° C.]:
6.8

CPY-3-O2
12.00%
γ₁[mPa · s, 20° C.]:
90

CC-3-V
36.50%
K₁[pN, 20° C.]:
11.7

BCH-32
2.50%
K₃[pN, 20° C.]:
14.1

PPGU-3-F
0.50%
V₀[20° C., V]:
2.21

Example 135

PY-3V-O2
10.50%
Clearing point [° C.]:
74.5

CY-3-O2
15.00%
Δn [589 nm, 20° C.]:
0.1073

CCY-3-O1
7.50%
Δε [1 kHz, 20° C.]:
−3.0

CCY-3-O2
4.00%
ε_|| [1 kHz, 20° C.]:
3.6

CPY-2-O2
11.00%
ε_⊥ [1 kHz, 20° C.]:
6.6

CPY-3-O2
8.00%
γ₁[mPa · s, 20° C.]:
84

CC-3-V
40.50%
K₁[pN, 20° C.]:
12.8

BCH-32
3.00%
K₃[pN, 20° C.]:
14.1

PPGU-3-F
0.50%
V₀[20° C., V]:
2.29

Example 136

CC-3-V
36.50%
Clearing point [° C.]:
73

CY-3-O2
10.00%
Δn [589 nm, 20° C.]:
0.1081

CCY-3-O1
6.50%
Δε [1 kHz, 20° C.]:
−3.3

CCY-3-O2
11.00%
ε_|| [1 kHz, 20° C.]:
3.5

CCY-4-O2
6.00%
ε_⊥ [1 kHz, 20° C.]:
6.8

CPY-3-O2
8.50%
γ₁[mPa · s, 20° C.]:
90

PY-3-O2
4.00%
K₁[pN, 20° C.]:
13.2

PY-3V-O2
6.50%
K₃[pN, 20° C.]:
15.0

PY-1-O4
4.50%
V₀[20° C., V]:
2.25

PYP-2-3
3.00%

PP-1-2V1
3.50%

Example 137

PY-V2-O2
7.00%
Clearing point [° C.]:
75.5

CY-3-O2
10.00%
Δn [589 nm, 20° C.]:
0.1086

CY-1V2-O2
6.00%
Δε [1 kHz, 20° C.]:
−2.7

CCY-3-O1
5.00%
ε_|| [1 kHz, 20° C.]:
3.5

CCY-3-O2
2.00%
ε_⊥ [1 kHz, 20° C.]:
6.2

CPY-2-O2
12.00%
γ₁[mPa · s, 20° C.]:
85

CPY-3-O2
10.00%
K₁[pN, 20° C.]:
12.8

CC-3-V
37.00%
K₃[pN, 20° C.]:
14.5

BCH-32
10.50%
V₀[20° C., V]:
2.45

PPGU-3-F
0.50%
LTS (bulk) [−20° C.]:
>1000 h

Example 138

PY-V-O2
5.00%
Clearing point [° C.]:
75

PY-V2-O2
5.00%
Δn [589 nm, 20° C.]:
0.1087

PY-3-O2
3.00%
Δε [1 kHz, 20° C.]:
−3.1

CY-V-O2
4.00%
ε_|| [1 kHz, 20° C.]:
3.7

CY-3-O2
3.00%
ε_⊥ [1 kHz, 20° C.]:
6.8

CCY-3-O1
3.50%
γ₁[mPa · s, 20° C.]:
83

CCY-3-O2
7.00%
K₁[pN, 20° C.]:
12.6

CCY-4-O2
5.00%
K₃[pN, 20° C.]:
14.2

CPY-2-O2
8.00%
V₀[20° C., V]:
2.28

CPY-3-O2
10.00%
LTS (bulk) [−20° C.]:
>1000 h

CC-3-V
38.00%

BCH-32
6.00%

PPGU-3-F
0.50%

Y-4O-O4
2.00%

Example 139

PY-V2-O2
5.50%
Clearing point [° C.]:
75.5

PY-3-O2
8.00%
Δn [589 nm, 20° C.]:
0.1075

CY-V-O2
6.00%
Δε [1 kHz, 20° C.]:
−3.1

CCY-3-O1
5.50%
ε_|| [1 kHz, 20° C.]:
3.7

CCY-3-O2
5.00%
ε_⊥ [1 kHz, 20° C.]:
6.8

CCY-4-O2
4.00%
γ₁[mPa · s, 20° C.]:
88

CPY-2-O2
8.00%
K₁[pN, 20° C.]:
12.6

CPY-3-O2
9.00%
K₃[pN, 20° C.]:
14.0

CC-3-V
35.00%
V₀[20° C., V]:
2.26

BCH-32
8.00%
LTS (bulk) [−20° C.]:
>1000 h

PPGU-3-F
0.50%
LTS (bulk) [−30° C.]:
>1000 h

Y-4O-O4
2.00%

Example 140

PY-V-O2
5.50%
Clearing point [° C.]:
74.5

PY-3-O2
4.50%
Δn [589 nm, 20° C.]:
0.1098

CY-3-O2
11.00%
Δε [1 kHz, 20° C.]:
−3.0

CCY-3-O2
10.50%
ε_|| [1 kHz, 20° C.]:
3.7

CPY-2-O2
10.00%
ε_⊥ [1 kHz, 20° C.]:
6.7

CPY-3-O2
11.00%
γ₁[mPa · s, 20° C.]:
85

CC-3-V
37.00%
K₁[pN, 20° C.]:
12.9

BCH-32
8.00%
K₃[pN, 20° C.]:
14.5

PPGU-3-F
0.50%
V₀[20° C., V]:
2.31

Y-4O-O4
2.00%
LTS (bulk) [−20° C.]:
>1000 h

LTS (bulk) [−30° C.]:
>1000 h

Example 141

PY-3-O2
6.00%
Clearing point [° C.]:
75

PY-V2-O2
6.00%
Δn [589 nm, 20° C.]:
0.1079

CY-3-O2
12.00%
Δε [1 kHz, 20° C.]:
−3.2

CCY-3-O1
4.00%
ε_|| [1 kHz, 20° C.]:
3.7

CCY-3-O2
9.50%
ε_⊥ [1 kHz, 20° C.]:
6.9

CPY-2-O2
9.50%
γ₁[mPa · s, 20° C.]:
91

CPY-3-O2
10.00%
K₁[pN, 20° C.]:
13.1

CC-3-V
35.50%
K₃[pN, 20° C.]:
14.9

BCH-32
7.00%
V₀[20° C., V]:
2.29

PPGU-3-F
0.50%
LTS (bulk) [−20° C.]:
>1000 h

LTS (bulk) [−30° C.]:
>1000 h

Example 142

PY-3-O2
6.00%
Clearing point [° C.]:
75

PY-1V2-O2
6.50%
Δn [589 nm, 20° C.]:
0.1088

CY-3-O2
13.00%
Δε [1 kHz, 20° C.]:
−3.3

CCY-3-O2
12.00%
ε_|| [1 kHz, 20° C.]:
3.7

CPY-2-O2
8.00%
ε_⊥ [1 kHz, 20° C.]:
6.9

CPY-3-O2
12.00%
γ₁[mPa · s, 20° C.]:
93

CC-3-V
36.00%
K₁[pN, 20° C.]:
13.5

BCH-32
6.00%
K₃[pN, 20° C.]:
15.6

PPGU-3-F
0.50%
V₀[20° C., V]:
2.32

Example 143

PY-3-O2
4.50%
Clearing point [° C.]:
75

PY-V2-O2
6.00%
Δn [589 nm, 20° C.]:
0.1078

CY-3-O2
10.00%
Δε [1 kHz, 20° C.]:
−3.1

CCY-3-O1
2.00%
ε_|| [1 kHz, 20° C.]:
3.7

CCY-3-O2
11.00%
ε_⊥ [1 kHz, 20° C.]:
6.8

CPY-2-O2
8.00%
γ₁[mPa · s, 20° C.]:
88

CPY-3-O2
12.00%
K₁[pN, 20° C.]:
13.0

CC-3-V
36.00%
K₃[pN, 20° C.]:
14.8

BCH-32
8.00%
V₀[20° C., V]:
2.31

PPGU-3-F
0.50%
LTS (bulk) [−30° C.]
>1000 h

Y-4O-O4
2.00%

Example 143a

The mixture according to Example 143 additionally comprises 0.01% of

embedded image

Example 144

BCH-32
6.00%
Clearing point [° C.]:
77

CCH-23
16.00%
Δn [589 nm, 20° C.]:
0.0953

CCH-301
3.50%
Δε [1 kHz, 20° C.]:
−2.5

CCH-34
6.00%
ε_|| [1 kHz, 20° C.]:
3.3

CCH-35
6.00%
ε_⊥ [1 kHz, 20° C.]:
5.8

CCP-3-1
12.00%
γ₁[mPa · s, 20° C.]:
96

CY-3-O2
15.00%
K₁[pN, 20° C.]:
14.6

CCY-3-O1
5.00%
K₃[pN, 20° C.]:
15.6

CCY-3-O2
7.00%
V₀[20° C., V]:
2.66

CPY-3-O2
8.50%
LTS (bulk) [−20° C.]
>1000 h

PCH-302
6.00%
LTS (bulk) [−30° C.]
>1000 h

PY-V2-O2
9.00%

Example 145

BCH-32
4.00%
Clearing point [° C.]:
76

CC-3-V
34.50%
Δn [589 nm, 20° C.]:
0.0955

CCP-3-1
10.00%
Δε [1 kHz, 20° C.]:
−2.5

CY-3-O2
14.00%
ε_|| [1 kHz, 20° C.]:
3.4

CCY-3-O1
6.00%
ε_⊥ [1 kHz, 20° C.]:
5.9

CCY-3-O2
9.00%
γ₁[mPa · s, 20° C.]:
82

CPY-3-O2
9.00%
K₁[pN, 20° C.]:
13.4

PCH-302
4.50%
K₃[pN, 20° C.]:
16.2

PY-V2-O2
9.00%
V₀[20° C., V]:
2.66

LTS (bulk) [−20° C.]:
>1000 h

LTS (bulk) [−30° C.]:
>1000 h

Example 146

BCH-32
6.50%
Clearing point [° C.]:
76.5

CCH-23
16.00%
Δn [589 nm, 20° C.]:
0.0933

CCH-301
4.50%
Δε [1 kHz, 20° C.]:
−2.5

CCH-34
8.00%
ε_∥ [1 kHz, 20° C.]:
3.3

CCH-35
6.00%
ε_⊥ [1 kHz, 20° C.]:
5.8

CCP-3-1
8.50%
γ₁[mPa · s, 20° C.]:
96

CY-3-O2
15.00%
K₁[pN, 20° C.]:
14.3

CCY-3-O1
5.50%
K₃[pN, 20° C.]:
15.0

CCY-3-O2
8.00%
V₀[20° C., V]:
2.57

CPY-3-O2
9.00%

PCH-302
4.50%

PY-V2-O2
8.50%

Example 147

Y-4O-O4
7.00%
Clearing point [° C.]:
75.5

PY-1-O4
2.00%
Δn [589 nm, 20° C.]:
0.1062

CCY-3-O1
2.50%
Δε [1 kHz, 20° C.]:
−2.2

CCY-3-O2
8.00%
ε_∥ [1 kHz, 20° C.]:
3.4

CPY-3-O2
10.00%
ε_⊥ [1 kHz, 20° C.]:
5.5

PYP-2-3
8.50%
γ₁[mPa · s, 20° C.]:
90

CCH-23
19.00%
K₁[pN, 20° C.]:
14.5

CCH-34
6.00%
K₃[pN, 20° C.]:
14.2

CCH-35
6.00%
V₀[20° C., V]:
2.70

PCH-302
8.00%

BCH-32
7.00%

CCP-3-1
10.00%

PY-V2-O2
6.00%

Example 148

BCH-32
7.00%
Clearing point [° C.]:
75

CCH-23
16.00%
Δn [589 nm, 20° C.]:
0.0930

CCH-301
3.50%
Δε [1 kHz, 20° C.]:
−2.5

CCH-34
6.50%
ε_∥ [1 kHz, 20° C.]:
3.3

CCH-35
6.50%
ε_⊥ [1 kHz, 20° C.]:
5.8

CCP-3-1
9.50%
γ₁[mPa · s, 20° C.]:
93

CY-3-O2
7.50%
K₁[pN, 20° C.]:
13.7

CY-V1-O2
7.00%
K₃[pN, 20° C.]:
14.1

CCY-3-O1
6.00%
V₀[20° C., V]:
2.52

CCY-3-O2
9.00%
LTS (bulk) [−20° C.]
>1000 h

CPY-3-O2
7.00%

PCH-302
5.00%

PY-V2-O2
9.50%

Example 149

BCH-32
7.00%
Clearing point [° C.]:
74

CCH-23
15.00%
Δn [589 nm, 20° C.]:
0.0921

CCH-301
4.00%
Δε [1 kHz, 20° C.]:
−2.5

CCH-34
8.00%
ε_∥ [1 kHz, 20° C.]:
3.4

CCH-35
7.00%
ε_⊥ [1 kHz, 20° C.]:
5.9

CCP-3-1
8.00%
γ₁[mPa · s, 20° C.]:
95

CY-3-O2
9.00%
K₁[pN, 20° C.]:
13.4

CY-V1-O2
7.00%
K₃[pN, 20° C.]:
14.1

CCY-3-O1
9.00%
V₀[20° C., V]:
2.49

CCY-3-O2
7.00%

CPY-1V-O1
7.00%

PCH-302
4.00%

PY-V2-O2
8.00%

Example 150

BCH-32
7.00%
Clearing point [° C.]:
77

CCH-23
13.00%
Δn [589 nm, 20° C.]:
0.0935

CCH-301
3.00%
Δε [1 kHz, 20° C.]:
−2.4

CCH-34
10.00%
ε_∥ [1 kHz, 20° C.]:
3.3

CCH-35
6.00%
ε_⊥ [1 kHz, 20° C.]:
5.7

CCP-3-1
10.50%
γ₁[mPa · s, 20° C.]:
97

CY-3-O2
8.50%
K₁[pN, 20° C.]:
14.1

CY-V1-O2
5.50%
K₃[pN, 20° C.]:
14.6

CCY-3-O1
10.00%
V₀[20° C., V]:
2.62

CCY-3-O2
6.00%

CPY-1V-O1
5.50%

PCH-302
6.00%

PY-V2-O2
9.00%

Example 151

CY-3-O2
9.50%
Clearing point [° C.]:
75

PY-V-O2
9.50%
Δn [589 nm, 20° C.]:
0.1101

CCY-3-O2
9.00%
Δε [1 kHz, 20° C.]:
−3.0

CCY-4-O2
6.00%
ε_∥ [1 kHz, 20° C.]:
3.5

CPY-2-O2
5.00%
ε_⊥ [1 kHz, 20° C.]:
6.5

CPY-3-O2
9.50%
γ₁[mPa · s, 20° C.]:
100

CCH-34
10.00%
K₁[pN, 20° C.]:
13.4

CCH-23
21.00%
K₃[pN, 20° C.]:
14.3

PYP-2-3
7.00%
V₀[20° C., V]:
2.31

CCP-3-1
3.00%

PCH-301
10.50%

Example 152

PY-3-O2
11.00%
Clearing point [° C.]:
75

PY-1V-O2
8.00%
Δn [589 nm, 20° C.]:
0.1100

CY-3-O2
5.00%
Δε [1 kHz, 20° C.]:
−3.4

CCY-3-O2
9.00%
ε_∥ [1 kHz, 20° C.]:
3.5

CCY-3-O1
6.00%
ε_⊥ [1 kHz, 20° C.]:
6.9

CPY-2-O2
7.00%
γ₁[mPa · s, 20° C.]:
107

CPY-3-O2
10.00%
K₁[pN, 20° C.]:
14.3

CCH-34
10.00%
K₃[pN, 20° C.]:
15.2

CCH-23
21.00%
V₀[20° C., V]:
2.24

CCP-3-1
4.00%

PCH-301
9.00%

Example 153

CY-3-O2
10.00%
Clearing point [° C.]:
75

PY-V-O2
9.00%
Δn [589 nm, 20° C.]:
0.1099

CCY-3-O2
9.00%
Δε [1 kHz, 20° C.]:
−3.2

CCY-4-O2
7.00%
ε_∥ [1 kHz, 20° C.]:
3.5

CPY-2-O2
7.00%
ε_⊥ [1 kHz, 20° C.]:
6.7

CPY-3-O2
9.00%
γ₁[mPa · s, 20° C.]:
104

CCH-34
11.00%
K₁[pN, 20° C.]:
13.2

CCH-23
20.00%
K₃[pN, 20° C.]:
14.1

PYP-2-3
7.00%
V₀[20° C., V]:
2.24

CCP-3-1
1.00%

PCH-301
10.00%

Example 154

CY-3-O2
12.50%
Clearing point [° C.]:
74

PY-3-O2
4.00%
Δn [589 nm, 20° C.]:
0.1026

PY-V-O2
5.00%
Δε [1 kHz, 20° C.]:
−3.2

CCY-3-O2
9.00%
ε_∥ [1 kHz, 20° C.]:
3.5

CCY-3-O1
6.00%
ε_⊥ [1 kHz, 20° C.]:
6.7

CCY-4-O2
2.00%
γ₁[mPa · s, 20° C.]:
102

CPY-2-O2
7.00%
K₁[pN, 20° C.]:
13.5

CPY-3-O2
9.00%
K₃[pN, 20° C.]:
14.1

CCH-34
10.00%
V₀[20° C., V]:
2.22

CCH-23
21.00%
LTS (bulk) [−20° C.]:
>1000 h

BCH-32
5.50%

PCH-301
8.00%

PYP-2-3
1.00%

Example 155

PY-3-O2
12.00%
Clearing point [° C.]:
75

PY-V-O2
5.00%
Δn [589 nm, 20° C.]:
0.1112

CCY-3-O2
10.00%
Δε [1 kHz, 20° C.]:
−3.1

CCY-4-O2
9.50%
ε_∥ [1 kHz, 20° C.]:
3.5

CPY-2-O2
6.00%
ε_⊥ [1 kHz, 20° C.]:
6.6

CPY-3-O2
9.00%
γ₁[mPa · s, 20° C.]:
107

CCH-34
5.50%
K₁[pN, 20° C.]:
13.7

CCH-23
21.00%
K₃[pN, 20° C.]:
14.4

PYP-2-3
4.50%
V₀[20° C., V]:
2.29

CCH-35
4.00%

PCH-301
12.00%

BCH-32
1.50%

Example 156

PY-V-O2
8.00%
Clearing point [° C.]:
74.8

CY-3-O2
5.50%
Δn [589 nm, 20° C.]:
0.1073

CY-V-O2
11.00%
Δε [1 kHz, 20° C.]:
−3.1

CCY-3-O1
4.00%
ε_∥ [1 kHz, 20° C.]:
3.7

CCY-3-O2
10.00%
ε_⊥ [1 kHz, 20° C.]:
6.8

CPY-3-O2
10.00%
γ₁[mPa · s, 20° C.]:
82

CPY-V-O4
7.00%
K₁[pN, 20° C.]:
12.1

CC-3-V
37.00%
K₃[pN, 20° C.]:
14.6

BCH-32
7.00%
V₀[20° C., V]:
2.30

PPGU-3-F
0.50%

Example 157

PY-3-O2
5.00%
Clearing point [° C.]:
76

PY-V2-O2
6.50%
Δn [589 nm, 20° C.]:
0.1082

CY-3-O2
12.00%
Δε [1 kHz, 20° C.]:
−3.2

CCY-3-O1
5.00%
ε_∥ [1 kHz, 20° C.]:
3.7

CCY-3-O2
10.00%
ε_⊥ [1 kHz, 20° C.]:
6.9

CPY-V-O2
9.00%
γ₁[mPa · s, 20° C.]:
89

CPY-V-O4
10.00%
K₁[pN, 20° C.]:
12.6

CC-3-V
35.00%
K₃[pN, 20° C.]:
14.6

BCH-32
7.00%
V₀[20° C., V]:
2.26

PPGU-3-F
0.50%

Example 157a

The mixture according to Example 157 additionally comprises 0.01% of

embedded image

Example 157b

The mixture according to Example 157 additionally comprises 0.01% of

embedded image

Example 158

PY-V-O2
5.00%
Clearing point [° C.]:
73.5

PY-V2-O2
5.00%
Δn [589 nm, 20° C.]:
0.1074

PY-3-O2
3.00%
Δε [1 kHz, 20° C.]:
−2.9

CY-V-O2
4.00%
ε_∥ [1 kHz, 20° C.]:
3.7

CY-3-O2
3.00%
ε_⊥ [1 kHz, 20° C.]:
6.6

CCY-3-O1
3.00%
γ₁[mPa · s, 20° C.]:
78

CCY-3-O2
6.00%
K₁[pN, 20° C.]:
12.5

CCY-4-O2
5.00%
K₃[pN, 20° C.]:
14.0

CPY-2-O2
7.50%
V₀[20° C., V]:
2.33

CPY-3-O2
10.00%

CC-3-V
39.00%

BCH-32
7.00%

PPGU-3-F
0.50%

Y-4O-O4
2.00%

Example 159

PY-V-O2
5.00%
Clearing point [° C.]:
75

CY-3-O2
8.00%
Δn [589 nm, 20° C.]:
0.1078

CY-V-O2
11.00%
Δε [1 kHz, 20° C.]:
−3.0

CCY-3-O1
4.00%
ε_∥ [1 kHz, 20° C.]:
3.7

CCY-3-O2
7.00%
ε_⊥ [1 kHz, 20° C.]:
6.7

CPY-3-O2
8.00%
γ₁[mPa · s, 20° C.]:
84

CPY-V-O4
5.00%
K₁[pN, 20° C.]:
11.9

CPY-V-O2
7.00%
K₃[pN, 20° C.]:
14.4

CC-3-V
35.50%
V₀[20° C., V]:
2.30

BCH-32
9.00%

PPGU-3-F
0.50%

Example 160

APUQU-2-F
9.00%
Clearing point [° C.]:
77.5

APUQU-3-F
8.50%
Δn [589 nm, 20° C.]:
0.1087

CC-3-V
43.50%
Δε [1 kHz, 20° C.]:
9.9

CCP-30CF₃
7.50%
ε_∥ [1 kHz, 20° C.]:
13.7

CCP-V-1
7.00%
ε_⊥ [1 kHz, 20° C.]:
3.8

DPGU-4-F
3.50%
γ₁[mPa · s, 20° C.]:
68

PGP-2-2V
4.00%
K₁[pN, 20° C.]:
12.4

PGUQU-4-F
4.50%
K₃[pN, 20° C.]:
13.1

PUQU-3-F
8.50%
V₀[20° C., V]:
1.18

PY-3V-O2
4.00%
LTS (bulk) [−20° C.]:
>1000 h

LTS (bulk) [−30° C.]:
>1000 h

Example 161

PY-1V-O2
4.50%
Clearing point [° C.]:
73.5

PY-V2-O2
5.00%
Δn [589 nm, 20° C.]:
0.1074

CY-3-O2
10.00%
Δε [1 kHz, 20° C.]:
−2.8

CY-V-O2
4.50%
ε_|| [1 kHz, 20° C.]:
3.6

CCY-3-O1
6.00%
ε_⊥ [1 kHz, 20° C.]:
6.4

CCY-3-O2
3.00%
γ₁[mPa · s, 20° C.]:
78

CPY-2-O2
9.00%
K₁[pN, 20° C.]:
12.5

CPY-3-O2
10.00%
K₃[pN, 20° C.]:
14.3

CC-3-V
39.50%
V₀[20° C., V]:
2.40

BCH-32
8.00%

PPGU-3-F
0.50%

Example 162

PY-V2-O2
5.50%
Clearing point [° C.]:
74

PY-3-O2
6.00%
Δn [589 nm, 20° C.]:
0.1074

CY-V2-O2
5.00%
Δε [1 kHz, 20° C.]:
−2.9

CY-3-O2
4.00%
ε_|| [1 kHz, 20° C.]:
3.7

CCY-3-O1
3.00%
ε_⊥ [1 kHz, 20° C.]:
6.6

CCY-3-O2
3.00%
γ₁[mPa · s, 20° C.]:
85

CCY-4-O2
6.00%
K₁[pN, 20° C.]:
12.6

CPY-2-O2
8.00%
K₃[pN, 20° C.]:
13.9

CPY-3-O2
12.00%
V₀[20° C., V]:
2.30

CC-3-V
36.50%

BCH-32
8.50%

PPGU-3-F
0.50%

Y-4O-O4
2.00%

Example 163

PY-V2-O2
6.00%
Clearing point [° C.]:
74.5

PY-3-O2
6.00%
Δn [589 nm, 20° C.]:
0.1086

CY-1V2-O2
4.50%
Δε [1 kHz, 20° C.]:
−2.9

CY-3-O2
4.00%
ε_|| [1 kHz, 20° C.]:
3.6

CCY-3-O1
3.00%
ε_⊥ [1 kHz, 20° C.]:
6.5

CCY-3-O2
3.00%
γ₁[mPa · s, 20° C.]:
86

CCY-4-O2
6.00%
K₁[pN, 20° C.]:
12.8

CPY-2-O2
8.00%
K₃[pN, 20° C.]:
14.2

CPY-3-O2
12.00%
V₀[20° C., V]:
2.33

CC-3-V
37.00%

BCH-32
8.00%

PPGU-3-F
0.50%

Y-4O-O4
2.00%

Example 164

PY-V2-O2
6.50%
Clearing point [° C.]:
74

CY-3-O2
11.00%
Δn [589 nm, 20° C.]:
0.1068

CY-V2-O2
6.50%
Δε [1 kHz, 20° C.]:
−2.8

CCY-3-O1
6.00%
ε_|| [1 kHz, 20° C.]:
3.6

CCY-3-O2
2.00%
ε_⊥ [1 kHz, 20° C.]:
6.4

CPY-2-O2
10.00%
γ₁[mPa · s, 20° C.]:
85

CPY-3-O2
12.00%
K₁[pN, 20° C.]:
12.3

CC-3-V
36.00%
K₃[pN, 20° C.]:
14.1

BCH-32
9.50%
V₀[20° C., V]:
2.35

PPGU-3-F
0.50%

Example 165

PCH-504FF
10.00%
Clearing point [° C.]:
72

PCH-502FF
8.00%
Δn [589 nm, 20° C.]:
0.1216

PCH-304FF
4.00%
Δε [1 kHz, 20° C.]:
−4.0

CCP-V2-1
6.00%
ε_|| [1 kHz, 20° C.]:
3.9

BCH-32
7.00%
ε_⊥ [1 kHz, 20° C.]:
7.9

CCH-35
5.00%
γ₁[mPa · s, 20° C.]:
125

CC-5-V
7.00%
K₁[pN, 20° C.]:
14.6

CC-3-V1
10.00%
K₃[pN, 20° C.]:
14.7

CPY-2-O2
10.00%
V₀[20° C., V]:
2.03

CPY-3-O2
13.00%

PY-V2-O2
20.00%

Example 166

CY-3-O2
24.00%
Clearing point [° C.]:
81

PY-1V2-O2
7.00%
Δn [589 nm, 20° C.]:
0.1019

CCY-3-O3
4.00%
Δε [1 kHz, 20° C.]:
−3.1

CCY-3-O2
5.00%
ε_|| [1 kHz, 20° C.]:
3.5

CPY-2-O2
7.00%
ε_⊥ [1 kHz, 20° C.]:
6.6

CPY-3-O2
5.00%
γ₁[mPa · s, 20° C.]:
126

CCP-3-3
9.00%
K₁[pN, 20° C.]:
14.9

CCP-3-1
9.00%
K₃[pN, 20° C.]:
16.0

BCH-32
5.00%
V₀[20° C., V]:
2.39

CCH-34
10.00%
LTS (bulk) [−20° C.]:
>1000 h

CCH-25
10.00%

PCH-301
5.00%

Example 167

CY-3-O2
18.00%
Clearing point [° C.]:
80.5

PY-1V2-O2
6.00%
Δn [589 nm, 20° C.]:
0.0949

CCY-3-O2
8.00%
Δε [1 kHz, 20° C.]:
−3.1

CCY-4-O2
4.00%
ε_|| [1 kHz, 20° C.]:
3.4

CPY-2-O2
7.00%
ε_⊥ [1 kHz, 20° C.]:
6.4

CPY-3-O2
10.00%
γ₁[mPa · s, 20° C.]:
113

CCH-34
8.00%
K₁[pN, 20° C.]:
14.9

CCH-23
22.00%
K₃[pN, 20° C.]:
16.0

CCP-3-3
7.00%
V₀[20° C., V]:
2.41

CCP-3-1
7.00%
LTS (bulk) [−20° C.]:
>1000 h

PCH-301
3.00%

Example 168

CY-1V-O1V
20.00%
Clearing point [° C.]:
82.5

PY-1V2-O2
7.00%
Δn [589 nm, 20° C.]:
0.0987

CY-3-O2
5.00%
Δε [1 kHz, 20° C.]:
−3.0

CCY-3-O2
5.00%
ε_|| [1 kHz, 20° C.]:
3.4

CCY-4-O2
5.00%
ε_⊥ [1 kHz, 20° C.]:
6.4

CPY-3-O2
10.00%
γ₁[mPa · s, 20° C.]:
109

CCH-34
10.00%
K₁[pN, 20° C.]:
14.9

CC-3-V1
11.00%
K₃[pN, 20° C.]:
18.9

CC-2-V1
11.00%
V₀[20° C., V]:
2.66

CCP-3-1
8.00%
LTS (bulk) [−20° C.]:
>1000 h

PCH-301
2.00%

CCVC-3-V
6.00%

Example 169

CY-1V-O1V
20.00%
Clearing point [° C.]:
81

PY-1V2-O2
5.00%
Δn [589 nm, 20° C.]:
0.0953

CY-3-O2
7.00%
Δε [1 kHz, 20° C.]:
−3.0

CCY-3-O2
6.00%
ε_|| [1 kHz, 20° C.]:
3.4

CCY-3-O1
6.00%
ε_⊥ [1 kHz, 20° C.]:
6.4

CPY-3-O2
8.00%
γ₁[mPa · s, 20° C.]:
106

CCH-34
10.00%
K₁[pN, 20° C.]:
14.5

CC-3-V1
11.00%
K₃[pN, 20° C.]:
18.6

CC-2-V1
11.00%
V₀[20° C., V]:
2.63

CCP-3-1
8.00%
LTS (bulk) [−20° C.]:
>1000 h

PCH-301
2.00%

CCVC-3-V
6.00%

Example 170

CY-1V-O1V
20.00%
Clearing point [° C.]:
81.5

PY-1V2-O2
6.00%
Δn [589 nm, 20° C.]:
0.0947

CY-3-O2
6.00%
Δε [1 kHz, 20° C.]:
−3.0

CCY-3-O2
7.00%
ε_|| [1 kHz, 20° C.]:
3.4

CCY-3-O1
7.00%
ε_⊥ [1 kHz, 20° C.]:
6.4

CPY-3-O2
6.00%
γ₁[mPa · s, 20° C.]:
104

CCH-34
10.00%
K₁[pN, 20° C.]:
14.6

CC-3-V1
12.00%
K₃[pN, 20° C.]:
18.6

CC-2-V1
12.00%
V₀[20° C., V]:
2.64

CCP-V2-1
4.00%

CCP-V-1
4.00%

CCVC-3-V
6.00%

Example 171

CY-1V-O1V
20.00%
Clearing point [° C.]:
80.5

PY-1V2-O2
5.00%
Δn [589 nm, 20° C.]:
0.0962

CY-3-O2
12.00%
Δε [1 kHz, 20° C.]:
−3.4

CCY-3-O2
6.00%
ε_|| [1 kHz, 20° C.]:
3.5

CCY-4-O2
6.00%
ε_⊥ [1 kHz, 20° C.]:
6.9

CPY-3-O2
8.00%
γ₁[mPa · s, 20° C.]:
112

CCH-34
7.00%
K₁[pN, 20° C.]:
14.3

CC-3-V1
11.00%
K₃[pN, 20° C.]:
18.5

CC-2-V1
11.00%
V₀[20° C., V]:
2.45

CCP-3-1
6.00%

CCVC-3-V
8.00%

Example 172

CY-1V-O1V
20.00%
Clearing point [° C.]:
81.5

PY-1V2-O2
7.00%
Δn [589 nm, 20° C.]:
0.0932

CY-3-O2
7.50%
Δε [1 kHz, 20° C.]:
−3.3

CCY-3-O2
10.50%
ε_|| [1 kHz, 20° C.]:
3.4

CCY-4-O2
10.00%
ε_⊥ [1 kHz, 20° C.]:
6.7

CC-3-V2
11.00%
γ₁[mPa · s, 20° C.]:
104

CC-3-V1
11.00%
K₁[pN, 20° C.]:
14.9

CC-2-V1
11.00%
K₃[pN, 20° C.]:
19.0

CCP-3-1
6.00%
V₀[20° C., V]:
2.55

CCVC-3-V
6.00%
LTS (bulk) [−20° C.]
>1000 h

Example 173

CY-3-O2
12.00%
Clearing point [° C.]:
80.0

PY-1V2-O2
11.00%
Δn [589 nm, 20° C.]:
0.0950

CCY-3-O2
10.00%
Δε [1 kHz, 20° C.]:
−3.1

CCY-4-O2
10.00%
ε_|| [1 kHz, 20° C.]:
3.3

CPY-3-O2
10.00%
ε_⊥ [1 kHz, 20° C.]:
6.4

CCH-34
8.00%
γ₁[mPa · s, 20° C.]:
111

CCH-23
22.00%
K₁[pN, 20° C.]:
15.1

CCP-3-3
3.00%
K₃[pN, 20° C.]:
16.6

CCP-3-1
7.00%
V₀[20° C., V]:
2.46

PCH-301
7.00%
LTS (bulk) [−20° C.]
>1000 h

Example 174

CY-1V-O1V
18.00%
Clearing point [° C.]:
80.5

PY-1V2-O2
4.00%
Δn [589 nm, 20° C.]:
0.0943

CY-3-O2
15.00%
Δε [1 kHz, 20° C.]:
−3.6

CCY-3-O2
8.00%
ε_|| [1 kHz, 20° C.]:
3.5

CCY-4-O2
7.00%
ε_⊥ [1 kHz, 20° C.]:
7.2

CPY-3-O2
7.00%
γ₁[mPa · s, 20° C.]:
112

CCH-34
7.00%
K₁[pN, 20° C.]:
14.2

CC-3-V1
11.00%
K₃[pN, 20° C.]:
18.2

CC-2-V1
11.00%
V₀[20° C., V]:
2.37

CCP-3-1
3.00%

CCVC-3-V
9.00%

Example 175

CY-1V-O1V
18.00%
Clearing point [° C.]:
80.5

PY-1V2-O2
3.00%
Δn [589 nm, 20° C.]:
0.0946

CY-3-O2
16.00%
Δε [1 kHz, 20° C.]:
−3.7

CCY-3-O2
10.00%
ε_|| [1 kHz, 20° C.]:
3.5

CCY-4-O2
5.00%
ε_⊥ [1 kHz, 20° C.]:
7.2

CPY-3-O2
7.00%
γ₁[mPa · s, 20° C.]:
113

CC-3-V2
7.00%
K₁[pN, 20° C.]:
14.2

CC-3-V1
11.00%
K₃[pN, 20° C.]:
18.7

CC-2-V1
11.00%
V₀[20° C., V]:
2.39

CCP-3-1
3.00%

CCVC-3-V
9.00%

Example 176

PY-3-O2
11.00%
Clearing point [° C.]:
75

PY-V2-O2
6.50%
Δn [589 nm, 20° C.]:
0.1105

CCY-3-O2
9.00%
Δε [1 kHz, 20° C.]:
−3.1

CCY-4-O2
3.00%
ε_|| [1 kHz, 20° C.]:
3.5

CCY-3-O1
5.00%
ε_⊥ [1 kHz, 20° C.]:
6.6

CPY-2-O2
6.50%
γ₁[mPa · s, 20° C.]:
105

CPY-3-O2
10.00%
K₁[pN, 20° C.]:
13.9

CCH-34
10.00%
K₃[pN, 20° C.]:
14.3

CCH-23
21.00%
V₀[20° C., V]:
2.28

PYP-2-3
6.00%
LTS (bulk) [−20° C.]
>1000 h

CCP-3-1
3.00%

PCH-301
9.00%

Example 177

PY-3-O2
11.00%
Clearing point [° C.]:
74

PY-1V2-O2
7.50%
Δn [589 nm, 20° C.]:
0.1107

CCY-3-O2
9.00%
Δε [1 kHz, 20° C.]:
−3.0

CCY-3-O1
5.50%
ε_|| [1 kHz, 20° C.]:
3.4

CPY-2-O2
6.50%
ε_⊥ [1 kHz, 20° C.]:
6.4

CPY-3-O2
10.00%
γ₁[mPa · s, 20° C.]:
104

CCH-34
10.00%
K₁[pN, 20° C.]:
14.0

CCH-23
21.00%
K₃[pN, 20° C.]:
14.8

PYP-2-3
5.50%
V₀[20° C., V]:
2.37

CCP-3-1
4.00%
LTS (bulk) [−20° C.]
>1000 h

PCH-301
10.00%

Example 178

PY-3-O2
11.00%
Clearing point [° C.]:
74

PY-1V2-O2
8.00%
Δn [589 nm, 20° C.]:
0.1119

CY-3-O2
3.00%
Δε [1 kHz, 20° C.]:
−3.3

CCY-3-O2
9.00%
ε_|| [1 kHz, 20° C.]:
3.5

CCY-3-O1
6.00%
ε_⊥ [1 kHz, 20° C.]:
6.8

CPY-2-O2
6.50%
γ₁[mPa · s, 20° C.]:
108

CPY-3-O2
10.00%
K₁[pN, 20° C.]:
14.3

CCH-34
10.00%
K₃[pN, 20° C.]:
15.0

CCH-23
21.00%
V₀[20° C., V]:
2.26

PYP-2-3
5.00%
LTS (bulk) [−20° C.]
>1000 h

CCP-3-1
4.00%

PCH-301
6.50%

Example 179

CC-3-V
39.00%
Clearing point [° C.]:
74.5

CC-3-V1
3.00%
Δn [589 nm, 20° C.]:
0.1017

CCP-V-1
8.00%
Δε [1 kHz, 20° C.]:
3.2

CCP-V2-1
12.00%
γ₁[mPa · s, 20° C.]:
64

PGP-2-2V
3.50%
K₁[pN, 20° C.]:
13

PP-1-2V1
9.00%
K₃[pN, 20° C.]:
15.4

PPGU-3-F
1.00%
V₀[20° C., V]:
2.13

PUQU-3-F
15.50%

CCY-3-O2
9.00%

Example 180

BCH-32
5.00%
Clearing point [° C.]:
75.3

CC-3-V
41.50%
Δn [589 nm, 20° C.]:
0.0989

CC-3-V1
8.50%
Δε [1 kHz, 20° C.]:
−1.9

CCH-35
2.00%
ε_|| [1 kHz, 20° C.]:
3.2

CCP-3-1
3.00%
ε_⊥ [1 kHz, 20° C.]:
5.0

CCY-3-O2
7.00%
γ₁[mPa · s, 20° C.]:
69

CPY-2-O2
5.50%
K₁[pN, 20° C.]:
14.2

CPY-3-O2
12.50%
K₃[pN, 20° C.]:
15.5

PY-3-O2
15.00%
V₀[20° C., V]:
3.02

Example 180a

The mixture according to Example 180 additionally comprises 0.001% of Irganox® 1076 (octadecyl 3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, BASF) and 0.3% of RM-1.

Example 181

CCY-3-O1
8.00%
Clearing point [° C.]:
74.9

CCY-4-O2
7.50%
Δn [589 nm, 20° C.]:
0.1123

CPY-2-O2
10.00%
Δε [1 kHz, 20° C.]:
−3.7

CPY-3-O2
10.00%
ε_|| [1 kHz, 20° C.]:
3.7

CC-3-V
15.00%
ε_⊥ [1 kHz, 20° C.]:
7.5

PY-1-O4
5.00%
γ₁[mPa · s, 20° C.]:
121

PY-3-O2
9.00%
K₁[pN, 20° C.]:
13.2

PY-4-O2
5.00%
K₃[pN, 20° C.]:
15.5

CC-3-V1
9.00%
V₀[20° C., V]:
2.15

CCY-3-O2
6.50%

PCH-301
15.00%

Example 181a

The mixture according to Example 181 additionally comprises 0.01% of

embedded image

Example 182

CY-3-O2
10.00%
Clearing point [° C.]:
100

CY-3-O4
20.00%
Δn [589 nm, 20° C.]:
0.0865

CY-5-O4
20.00%
Δε [1 kHz, 20° C.]:
−5.4

CCY-3-O2
6.00%
ε_|| [1 kHz, 20° C.]:
3.9

CCY-3-O3
6.00%
ε_⊥ [1 kHz, 20° C.]:
9.3

CCY-4-O2
6.00%
γ₁[mPa · s, 20° C.]:
347

CCY-5-O2
6.00%
K₁[pN, 20° C.]:
15.6

CH-33
3.00%
K₃[pN, 20° C.]:
16.6

CH-35
3.50%
V₀[20° C., V]:
1.84

CH-43
3.50%

CH-45
3.50%

CCPC-33
4.00%

CCPC-34
4.50%

CCPC-35
4.00%

Example 183

CY-3-O2
15.00%
Clearing point [° C.]:
91

CY-5-O2
12.00%
Δn [589 nm, 20° C.]:
0.105

CCY-3-O1
4.00%
Δε [1 kHz, 20° C.]:
−4.5

CCY-3-O2
4.00%
γ₁[mPa · s, 20° C.]:
106

CCY-3-O3
4.00%
V₀[20° C., V]:
1.32

CCY-4-O2
4.00%

CLY-3-O2
10.00%

CLY-3-O3
2.00%

CPY-2-O2
8.00%

CC-3-V
24.00%

PGP-2-5
5.00%

Example 184

CY-3-O2
14.00%
Clearing point [° C.]:
84.7

CY-3-O4
4.00%
Δn [589 nm, 20° C.]:
0.1068

CY-5-O2
7.00%
Δε [1 kHz, 20° C.]:
−4.0

CCY-3-O1
4.00%
γ₁[mPa · s, 20° C.]:
138

CCY-3-O2
5.00%
K₁[pN, 20° C.]:
14.1

CCY-4-O2
8.00%
K₃[pN, 20° C.]:
16.2

CCY-5-O2
3.00%
V₀[20° C., V]:
2.13

CPY-2-O2
9.00%

CPY-3-O2
9.00%

PYP-2-3
6.00%

CC-3-V
22.00%

CC-3-V1
3.50%

CCP-V-1
5.00%

PPGU-3-F
0.50%

Example 185

Example 185a

The mixture according to Example 185 additionally comprises 0.25% of RM-35

embedded image

and 0.025% of

embedded image

Example 186

CC-3-V
34.00%
Clearing point [° C.]:
100

CC-3-V1
2.50%
Δn [589 nm, 20° C.]:
0.1003

CCP-V-1
10.00%
Δε [1 kHz, 20° C.]:
9.1

PUQU-3-F
7.00%
ε_|| [1 kHz, 20° C.]:
12.3

PGUQU-3-F
4.00%
ε_⊥ [1 kHz, 20° C.]:
3.2

CPGU-3-OT
6.00%
γ₁[mPa · s, 20° C.]:
99

CCGU-3-F
4.00%
K₁[pN, 20° C.]:
14.2

APUQU-3-F
8.00%
K₃[pN, 20° C.]:
17.3

CCP-3F.F.F
4.50%

CCP-30CF₃
4.00%

CCP-50CF₃
3.00%

CCQU-3-F
10.00%

CBC-33
3.00%

Example 186a

The mixture according to Example 186 additionally comprises 0.03% of

embedded image

Example 186b

The mixture according to Example 186 additionally comprises 0.03% of

embedded image

Example 187

Y-4O-O4
4.50%
Clearing point [° C.]:
100

PYP-2-3
2.00%
Δn [589 nm, 20° C.]:
0.1716

CC-3-V
25.00%
Δε [1 kHz, 20° C.]:
−1.5

CC-4-V
10.00%
ε_|| [1 kHz, 20° C.]:
3.4

CCP-V-1
14.00%
ε_⊥ [1 kHz, 20° C.]:
4.9

PTP-302FF
10.00%
γ₁[mPa · s, 20° C.]:
114

CPTP-302FF
10.00%
K₁[pN, 20° C.]:
15.2

CPTP-302FF
10.00%
K₃[pN, 20° C.]:
18.5

PPTUI-3-2
14.50%
V₀[20° C., V]:
3.76

Example 188

CCH-23
25.00%
Clearing point [° C.]:
70.3

CC-3-V
4.50%
Δn [589 nm, 20° C.]:
0.0737

PCH-53
25.00%
Δε [1 kHz, 20° C.]:
−1.1

CCY-2-1
12.00%
ε_|| [1 kHz, 20° C.]:
2.8

CCY-3-1
12.00%
ε_⊥ [1 kHz, 20° C.]:
3.9

CCY-3-O2
12.00%
K₁[pN, 20° C.]:
11.7

CCY-3-O3
5.00%
K₃[pN, 20° C.]:
13.1

CBC-33F
4.50%

Example 189

CC-3-V1
10.25%
Clearing point [° C.]:
74.7

CCH-23
18.50%
Δn [589 nm, 20° C.]:
0.1027

CCH-35
6.75%
Δε [1 kHz, 20° C.]:
−3.1

CCP-3-1
6.00%
ε_|| [1 kHz, 20° C.]:
3.4

CCY-3-1
2.50%
ε_⊥ [1 kHz, 20° C.]:
6.5

CCY-3-O2
12.00%
γ₁[mPa · s, 20° C.]:
104

CPY-2-O2
6.00%
K₁[pN, 20° C.]:
15.4

CPY-3-O2
9.75%
K₃[pN, 20° C.]:
16.8

CY-3-O2
11.50%
V₀[20° C., V]:
2.46

PP-1-2V1
3.75%

PY-3-O2
13.00%

Example 189a

The mixture according to Example 189 additionally comprises 0.01% of Irganox® 1076 (octadecyl 3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, BASF) and 0.3% of RM-1.

Example 190

BCH-3F.F
10.00%
Clearing point [° C.]:
99.6

BCH-3F.F.F
12.00%
Δn [589 nm, 20° C.]:
0.1122

CBC-33
3.00%
Δε [1 kHz, 20° C.]:
10.1

CBC-33F
3.00%
ε_|| [1 kHz, 20° C.]:
13.8

CCGU-3-F
8.00%
ε_⊥ [1 kHz, 20° C.]:
3.6

CCH-34
10.00%
γ₁[mPa · s, 20° C.]:
164

CCH-35
6.50%
K₁[pN, 20° C.]:
11.8

CCP-1F.F.F
10.00%
K₃[pN, 20° C.]:
15.9

CCP-2F.F.F
10.00%
V₀[20° C., V]:
1.14

CCP-3-1
2.50%

CCP-3F.F.F
8.00%

CPGP-4-3
3.00%

CPGP-5-2
2.00%

CPGP-5-3
1.00%

PUQU-2-F
1.00%

PUQU-3-F
10.00%

Example 191

CBC-53F
3.00%
Clearing point [° C.]:
115.5

CC-3-2V1
1.00%
Δn [589 nm, 20° C.]:
0.1106

CC-3-V
25.00%
Δε [1 kHz, 20° C.]:
7.0

CC-3-V1
5.00%
ε_∥ [1 kHz, 20° C.]:
9.9

CCGU-3-F
5.50%
ε_⊥ [1 kHz, 20° C.]:
2.9

CCP-30CF₃
4.00%
γ₁[mPa · s, 20° C.]:
118

CCP-30CF₃.F
8.00%
K₁[pN, 20° C.]:
17.4

CCP-40CF₃
3.00%
K₃[pN, 20° C.]:
20.4

CCP-50CF₃
3.00%
V₀[20° C., V]:
1.66

CCP-V-1
8.00%

CCP-V2-1
12.00%

CPGU-3-OT
5.00%

PGUQU-3-F
4.00%

PGUQU-4-F
4.00%

PGUQU-5-F
2.00%

PP-1-2V1
3.00%

PPGU-3-F
0.50%

PUQU-2-F
1.00%

PUQU-3-F
3.00%

Example 192

APUQU-2-F
2.50%
Clearing point [° C.]:
85.8

APUQU-3-F
5.00%
Δn [589 nm, 20° C.]:
0.1106

PUQU-3-F
10.00%
Δε [1 kHz, 20° C.]:
8.6

PGUQU-3-F
5.00%
ε_∥ [1 kHz, 20° C.]:
12.6

PGUQU-4-F
3.00%
ε_⊥ [1 kHz, 20° C.]:
4.0

PGUQU-5-F
2.00%
γ₁[mPa · s, 20° C.]:
92

DPGU-4-F
4.00%
K₁[pN, 20° C.]:
13.0

PPGU-3-F
0.50%
K₃[pN, 20° C.]:
15.3

CDUQU-3-F
0.05%
V₀[20° C., V]:
1.30

CC-3-V
39.95%

CCP-V-1
9.00%

CCP-V2-1
8.00%

CCP-3-1
2.00%

PGP-2-3
3.00%

CY-3-O2
5.00%

CCY-3-O2
5.00%

Example 193

APUQU-2-F
2.50%
Clearing point [° C.]:
85.8

APUQU-3-F
5.00%
Δn [589 nm, 20° C.]:
0.1105

PUQU-3-F
12.50%
Δε [1 kHz, 20° C.]:
10.6

PGUQU-3-F
5.00%
ε_∥ [1 kHz, 20° C.]:
14.8

PGUQU-4-F
4.00%
ε_⊥ [1 kHz, 20° C.]:
4.2

PGUQU-5-F
4.00%
γ₁[mPa · s, 20° C.]:
98

DPGU-4-F
4.00%
K₁[pN, 20° C.]:
12.7

PPGU-3-F
0.50%
K₃[pN, 20° C.]:
15.1

CDUQU-3-F
0.05%

CC-3-V
34.95%

CCP-V-1
7.00%

CCP-V2-1
6.00%

CCP-3-1
2.50%

CCPC-33
2.00%

CY-3-O2
5.00%

CCY-3-O2
5.00%

Example 194

APUQU-2-F
3.00%
Clearing point [° C.]:
85.7

APUQU-3-F
5.00%
Δn [589 nm, 20° C.]:
0.1097

PUQU-3-F
12.00%
Δε [1 kHz, 20° C.]:
8.7

PGUQU-3-F
5.00%
ε_∥ [1 kHz, 20° C.]:
12.4

PGUQU-4-F
4.00%
ε_⊥ [1 kHz, 20° C.]:
3.7

PGUQU-5-F
3.00%
γ₁[mPa · s, 20° C.]:
82

PPGU-3-F
0.50%
K₁[pN, 20° C.]:
12.9

CDUQU-3-F
0.05%
K₃[pN, 20° C.]:
15.7

CC-3-V
38.95%
V₀[20° C., V]:
1.29

CCP-V-1
10.50%

CCP-V2-1
9.00%

PGP-2-3
2.00%

CCY-3-O2
3.50%

CPY-3-O2
3.50%

Example 195

Example 196

CC-3-V
35.00%
Clearing point [° C.]:
84.6

CCY-3-O1
9.00%
Δn [589 nm, 20° C.]:
0.1010

CCY-3-O2
8.00%
Δε [1 kHz, 20° C.]:
−4.0

CCY-4-O2
5.00%
ε_∥ [1 kHz, 20° C.]:
3.6

CLY-3-O3
11.00%
ε_⊥ [1 kHz, 20° C.]:
7.6

CPY-2-O2
9.50%
γ₁[mPa · s, 20° C.]:
114

CPY-3-O2
4.00%
K₁[pN, 20° C.]:
14.5

CY-3-O2
6.50%

PY-3-O2
12.00%

Example 196a

The mixture according to Example 196 additionally comprises 0.04% of

embedded image

and 0.015% of

embedded image

Example 197

CC-3-V
33.00%
Clearing point [° C.]:
84

CCY-3-O1
7.00%
Δn [589 nm, 20° C.]:
0.1111

CCY-3-O2
7.00%
Δε [1 kHz, 20° C.]:
−4.0

CCY-4-O2
5.00%
ε_∥ [1 kHz, 20° C.]:
3.7

CLY-3-O3
11.00%
ε_⊥ [1 kHz, 20° C.]:
7.6

CPY-2-O2
9.00%
γ₁[mPa · s, 20° C.]:
119

CPY-3-O2
8.00%
K₁[pN, 20° C.]:
14.8

PP-1-2V1
1.50%

PY-1-O4
8.50%

PY-3-O2
10.00%

Example 197a

The mixture according to Example 197 additionally comprises 0.04% of

embedded image

and 0.015% of

embedded image

Example 198

APUQU-2-F
4.00%
Clearing point [° C.]:
85.6

APUQU-3-F
7.00%
Δn [589 nm, 20° C.]:
0.1021

PUQU-3-F
5.00%
Δε [1 kHz, 20° C.]:
6.9

PGUQU-3-F
4.00%
ε_∥ [1 kHz, 20° C.]:
10.0

PGUQU-4-F
3.00%
ε_⊥ [1 kHz, 20° C.]:
3.1

PGUQU-5-F
3.00%
γ₁[mPa · s, 20° C.]:
71

CCP-V-1
16.00%
K₁[pN, 20° C.]:
13.1

CC-3-V
40.00%
K₃[pN, 20° C.]:
15.3

CC-3-V1
4.00%
V₀[20° C., V]:
1.45

CC-4-V
3.00%

PGP-2-3
4.00%

PGP-2-4
1.00%

PPGU-3-F
1.00%

CCOC-4-3
5.00%

Example 198a

The mixture according to Example 198 additionally comprises 0.25% of RM-41

embedded image

Example 198b

The mixture according to Example 198 additionally comprises 0.3% of RM-17

embedded image

Example 199

Y-4O-O4
12.00%
Clearing point [° C.]:
101

CY-3-O2
14.00%
Δn [589 nm, 20° C.]:
0.1504

CCY-3-O1
5.00%
Δε [1 kHz, 20° C.]:
−6.2

CCY-3-O2
6.00%
ε_∥ [1 kHz, 20° C.]:
4.5

CCY-3-O3
6.00%
ε_⊥ [1 kHz, 20° C.]:
10.7

CCY-4-O2
6.00%
γ₁[mPa · s, 20° C.]:
281

CPY-2-O2
2.50%
K₁[pN, 20° C.]:
15.7

PTP-302FF
10.00%
K₃[pN, 20° C.]:
19.9

CPTP-302FF
10.00%
V₀[20° C., V]:
1.90

CPTP-502FF
10.00%

CC-4-V
2.50%

CCP-V-1
11.50%

CCPC-33
4.50%

Example 200

Y-4O-O4
12.00%
Clearing point [° C.]:
100

CCY-3-O1
5.00%
Δn [589 nm, 20° C.]:
0.1496

CCY-3-O2
6.00%
Δε [1 kHz, 20° C.]:
−4.1

CCY-3-O3
6.00%
ε_∥ [1 kHz, 20° C.]:
4.0

CCY-4-O2
2.00%
ε_⊥ [1 kHz, 20° C.]:
8.1

CC-4-V
15.00%
γ₁[mPa · s, 20° C.]:
180

CCP-V-1
11.00%
K₁[pN, 20° C.]:
16.1

CCP-V2-1
5.00%
K₃[pN, 20° C.]:
18.5

BCH-32
5.00%
V₀[20° C., V]:
2.25

PTP-302FF
10.00%

PTP-502FF
3.00%

CPTP-302FF
10.00%

CPTP-502FF
10.00%

Example 201

Y-4O-O4
10.00%
Clearing point [° C.]:
100

CCY-3-O1
2.50%
Δn [589 nm, 20° C.]:
0.1515

PTP-302FF
10.00%
Δε [1 kHz, 20° C.]:
−2.1

PTP-502FF
3.50%
ε_∥ [1 kHz, 20° C.]:
3.5

CPTP-302FF
10.00%
ε_⊥ [1 kHz, 20° C.]:
5.6

CPTP-502FF
3.50%
γ₁[mPa · s, 20° C.]:
125

CC-4-V
15.00%
K₁[pN, 20° C.]:
16.6

CC-3-V1
8.00%
K₃[pN, 20° C.]:
18.7

CCP-V-1
12.00%
V₀[20° C., V]:
3.13

CCP-V2-1
12.00%

BCH-32
5.00%

CPTP-3-1
5.00%

CPTP-3-2
3.50%

Example 202

Y-4O-O4
12.00%
Clearing point [° C.]:
101

CY-3-O2
6.00%
Δn [589 nm, 20° C.]:
0.1218

CY-3-O4
15.00%
Δε [1 kHz, 20° C.]:
−6.2

CCY-3-O2
6.00%
ε_∥ [1 kHz, 20° C.]:
4.5

CCY-3-O3
6.00%
ε_⊥ [1 kHz, 20° C.]:
10.7

CCY-4-O2
6.00%
γ₁[mPa · s, 20° C.]:
302

CLY-3-O2
5.00%
K₁[pN, 20° C.]:
15.7

CPY-2-O2
8.00%
K₃[pN, 20° C.]:
18.9

CPY-3-O2
8.00%
V₀[20° C., V]:
1.83

CPTP-302FF
4.00%

CPTP-502FF
4.00%

CCP-V-1
11.00%

CCPC-33
4.50%

CCPC-34
4.50%

Example 203

Y-4O-O4
15.00%
Clearing point [° C.]:
101

CCY-3-O2
5.00%
Δn [589 nm, 20° C.]:
0.1216

CCY-3-O3
5.00%
Δε [1 kHz, 20° C.]:
−4.0

CCY-4-O2
5.00%
ε_∥ [1 kHz, 20° C.]:
4.0

CLY-3-O2
4.00%
ε_⊥ [1 kHz, 20° C.]:
8.0

CPY-2-O2
8.00%
γ₁[mPa · s, 20° C.]:
167

CPY-3-02
8.00%
K₁[pN, 20° C.]:
16.1

CPTP-302FF
5.00%
K₃[pN, 20° C.]:
17.3

CPTP-502FF
5.00%
V₀[20° C., V]:
2.19

CC-4-V
13.50%

CCP-V-1
11.50%

CCP-V2-1
10.00%

BCH-32
5.00%

Example 204

Y-4O-O4
10.00%
Clearing point [° C.]:
100

CCY-3-O2
5.00%
Δn [589 nm, 20° C.]:
0.1203

CCY-3-O3
3.50%
Δε [1 kHz, 20° C.]:
−2.0

CPY-3-O2
5.50%
ε_∥ [1 kHz, 20° C.]:
3.4

PTP-302FF
3.50%
ε_⊥ [1 kHz, 20° C.]:
5.4

CPTP-302FF
5.00%
γ₁[mPa · s, 20° C.]:
117

CPTP-502FF
5.00%
K₁[pN, 20° C.]:
15.6

CCH-301
5.00%
K₃[pN, 20° C.]:
18.5

CC-4-V
15.00%
V₀[20° C., V]:
3.17

CC-3-V1
8.00%

CCP-V-1
13.00%

CCP-V2-1
13.00%

BCH-32
5.00%

CPTP-3-1
3.50%

Example 205

BCH-32
16.00%
Clearing point [° C.]:
105

BCH-52
6.50%
Δn [589 nm, 20° C.]:
0.1503

CCY-3-O1
5.00%
Δε [1 kHz, 20° C.]:
−4.2

CCY-3-O2
8.00%
ε_∥ [1 kHz, 20° C.]:
3.8

CCY-3-O3
6.00%
ε_⊥ [1 kHz, 20° C.]:
8.0

CCY-4-O2
8.00%
γ₁[mPa · s, 20° C.]:
297

CCY-5-O2
7.00%
K₁[pN, 20° C.]:
18.3

CY-3-O4
13.00%
K₃[pN, 20° C.]:
17.3

PY-3-O2
5.50%
V₀[20° C., V]:
2.13

PY-4-O2
9.00%

PYP-2-3
8.00%

PYP-2-4
8.00%

Example 205a

The mixture according to Example 205 additionally comprises 0.015% of

embedded image

and 0.015% of

embedded image

Example 206

CC-3-V
35.50%
Clearing point [° C.]:
79.8

CCY-3-O2
6.00%
Δn [589 nm, 20° C.]:
0.0962

CCY-3-O3
6.00%
Δε [1 kHz, 20° C.]:
−3.4

CCY-4-O2
6.00%
ε_|| [1 kHz, 20° C.]:
3.6

CCY-5-O2
3.50%
ε_⊥ [1 kHz, 20° C.]:
7.0

CPY-2-O2
10.00%
γ₁[mPa · s, 20° C.]:
111

CPY-3-O2
9.00%
K₁[pN, 20° C.]:
13.3

CY-3-O4
10.00%
K₃[pN, 20° C.]:
15.2

CY-5-O2
9.00%
V₀[20° C., V]:
2.23

PGIGI-3-F
5.00%

Example 207

CC-3-V
31.50%
Clearing point [° C.]:
79.6

CCP-V-1
5.00%
Δn [589 nm, 20° C.]:
0.1044

CCY-3-O2
6.00%
Δε [1 kHz, 20° C.]:
−3.4

CCY-3-O3
6.00%
ε_|| [1 kHz, 20° C.]:
3.6

CCY-4-O2
5.50%
ε_⊥ [1 kHz, 20° C.]:
7.0

CPY-2-O2
10.00%
γ₁[mPa · s, 20° C.]:
115

CPY-3-O2
10.00%
K₁[pN, 20° C.]:
13.3

CY-3-O4
7.00%
K₃[pN, 20° C.]:
15.2

CY-5-O2
7.00%
V₀[20° C., V]:
2.24

PGIGI-3-F
5.00%

PY-3-O2
7.00%

Example 208

CC-3-V
36.50%
Clearing point [° C.]:
84.9

CCP-V-1
3.00%
Δn [589 nm, 20° C.]:
0.1054

CCY-3-O1
6.50%
Δε [1 kHz, 20° C.]:
−3.5

CCY-3-O2
3.50%
ε_|| [1 kHz, 20° C.]:
3.5

CCY-4-O2
5.00%
ε_⊥ [1 kHz, 20° C.]:
7.0

CLY-3-O3
9.00%
γ₁[mPa · s, 20° C.]:
108

CPY-2-O2
11.00%
K₁[pN, 20° C.]:
14.4

CPY-3-O2
9.00%
K₃[pN, 20° C.]:
15.7

CY-3-O2
3.00%
V₀[20° C., V]:
2.24

PY-3-O2
13.50%

Example 209

CC-3-V
39.00%
Clearing point [° C.]:
75.2

BCH-3F.F.F
8.00%
Δn [589 nm, 20° C.]:
0.1298

PGU-2-F
6.00%
Δε [1 kHz, 20° C.]:
18.3

PGU-3-F
6.00%
ε_|| [1 kHz, 20° C.]:
22.6

APUQU-2-F
6.00%
ε_⊥ [1 kHz, 20° C.]:
4.3

APUQU-3-F
8.00%
γ₁[mPa · s, 20° C.]:
99

PGUQU-3-F
6.00%
K₁[pN, 20° C.]:
10.9

PGUQU-4-F
6.00%
K₃[pN, 20° C.]:
11.1

PGUQU-5-F
6.00%
V₀[20° C., V]:
0.81

DPGU-4-F
9.00%

Example 210

CC-3-V
38.50%
Clearing point [° C.]:
74.9

CCY-3-O1
4.50%
Δn [589 nm, 20° C.]:
0.1012

CCY-3-O2
4.00%
Δε [1 kHz, 20° C.]:
−3.7

CCY-4-O2
8.00%
ε_|| [1 kHz, 20° C.]:
3.7

CLY-3-O2
8.00%
ε_⊥ [1 kHz, 20° C.]:
7.4

CPY-2-O2
10.00%
γ₁[mPa · s, 20° C.]:
94

CPY-3-O2
9.00%
K₁[pN, 20° C.]:
13.4

PY-1-O4
7.50%
K₃[pN, 20° C.]:
14.4

PY-3-O2
6.00%
V₀[20° C., V]:
2.08

Y-4O-O4
4.50%
LTS (bulk) [−20° C.]
>1000 h

Example 210a

The mixture according to Example 210 additionally comprises 0.25% of

embedded image

and 0.25% of

embedded image

Example 211

CC-3-V
40.50%
Clearing point [° C.]:
74.8

CC-3-V1
5.00%
Δn [589 nm, 20° C.]:
0.1073

CCPC-33
3.00%
Δε [1 kHz, 20° C.]:
−1.9

CCY-3-O2
9.00%
ε_|| [1 kHz, 20° C.]:
3.2

CPY-2-O2
9.00%
ε_⊥ [1 kHz, 20° C.]:
5.2

CPY-3-O2
9.50%
γ₁[mPa · s, 20° C.]:
63

PP-1-2V1
6.00%
K₁[pN, 20° C.]:
12.6

PY-3-O2
7.00%
K₃[pN, 20° C.]:
14.1

PYP-2-3
8.00%
V₀[20° C., V]:
2.86

Y-4O-O4
3.00%

Example 211a

The mixture according to Example 211 additionally comprises 0.04% of

embedded image

and 0.02% of

embedded image

Example 212

APUQU-2-F
2.50%
Clearing point [° C.]:
97.5

APUQU-3-F
7.00%
Δn [589 nm, 20° C.]:
0.1000

PGUQU-3-F
4.00%
Δε [1 kHz, 20° C.]:
8.0

PGUQU-4-F
4.00%
ε_|| [1 kHz, 20° C.]:
11.1

PUQU-3-F
4.00%
ε_⊥ [1 kHz, 20° C.]:
3.1

CCP-V-1
6.00%
γ₁[mPa · s, 20° C.]:
93

CCP-V2-1
14.00%
K₁[pN, 20° C.]:
15.3

CCGU-3-F
3.50%
K₃[pN, 20° C.]:
17.6

CCQU-3-F
10.00%
V₀[20° C., V]:
1.45

PCH-302
6.50%

CC-3-V
25.00%

CC-3-V1
8.00%

CCP-30CF₃
5.00%

PPGU-3-F
0.50%

Example 212a

The mixture according to Example 212 additionally comprises 0.25% of

embedded image

Example 213

CY-3-O2
18.50%
Clearing point [° C.]:
80

CCY-3-O2
11.00%
Δn [589 nm, 20° C.]:
0.0896

CCY-4-O2
9.00%
Δε [1 kHz, 20° C.]:
−3.4

CPY-2-O2
7.50%
ε_|| [1 kHz, 20° C.]:
3.5

CPY-3-O2
9.00%
ε_⊥ [1 kHz, 20° C.]:
6.9

CCH-34
9.00%
γ₁[mPa · s, 20° C.]:
117

CCH-35
9.00%
K₁[pN, 20° C.]:
14.4

CC-3-V
10.00%
K₃[pN, 20° C.]:
15.1

CCH-301
9.00%
V₀[20° C., V]:
2.23

CCH-303
5.00%

PYP-2-3
3.00%

Example 213a

The mixture according to Example 213 additionally comprises 0.2% of

embedded image

Example 214

CY-3-O2
10.50%
Clearing point [° C.]:
79.7

PY-1-O4
5.00%
Δn [589 nm, 20° C.]:
0.1113

PY-3-O2
7.50%
Δε [1 kHz, 20° C.]:
−4.4

PY-4-O2
4.00%
K₁[pN, 20° C.]:
14.5

CCY-3-O1
5.50%
K₃[pN, 20° C.]:
16.7

CCY-3-O2
5.00%
V₀[20° C., V]:
2.05

CCY-4-O2
4.00%

CLY-3-O2
9.00%

CPY-2-O2
9.00%

CPY-3-O2
9.00%

CC-3-V
23.50%

CC-3-V1
7.00%

CBC-33F
1.00%

Example 215

APUQU-3-F
3.00%
Clearing point [° C.]:
90.5

CC-3-V1
7.75%
Δn [589 nm, 20° C.]:
0.1057

CC-4-V
10.00%
Δε [1 kHz, 20° C.]:
7.4

CC-5-V
9.25%
γ₁[mPa · s, 20° C.]:
91

CCGU-3-F
7.00%
K₁[pN, 20° C.]:
13.6

CCH-34
3.00%
K₃[pN, 20° C.]:
15.5

CCP-30CF₃
2.50%
V₀[20° C., V]:
1.43

CCP-V-1
14.00%

CCP-V2-1
9.50%

PCH-301
11.00%

PGP-2-2V
2.00%

PGUQU-3-F
5.00%

PPGU-3-F
0.50%

PUQU-3-F
12.00%

APUQU-2-F
3.50%

Example 216

CC-3-V
27.00%
Clearing point [° C.]:
74.9

CCY-3-1
9.50%
Δn [589 nm, 20° C.]:
0.1093

CCP-3-1
8.00%
Δε [1 kHz, 20° C.]:
−3.8

CLY-3-O2
6.00%
ε_|| [1 kHz, 20° C.]:
3.7

CPY-2-O2
10.50%
ε_⊥ [1 kHz, 20° C.]:
7.5

CPY-3-O2
10.50%
γ₁[mPa · s, 20° C.]:
108

CY-3-O2
15.00%
K₁[pN, 20° C.]:
14.1

PY-3-O2
13.50%
K₃[pN, 20° C.]:
15.8

V₀[20° C., V]:
2.16

Example 217

CC-3-V
16.00%
Clearing point [° C.]:
85.4

CC-3-V1
5.00%
Δn [589 nm, 20° C.]:
0.1060

CCH-34
7.00%
Δε [1 kHz, 20° C.]:
−3.7

CCP-3-1
1.00%
ε_|| [1 kHz, 20° C.]:
3.6

CCY-3-O1
6.00%
ε_⊥ [1 kHz, 20° C.]:
7.4

CCY-3-O2
7.50%
γ₁[mPa · s, 20° C.]:
114

CCY-3-O3
2.00%
K₁[pN, 20° C.]:
13.4

CCY-4-O2
5.00%
K₃[pN, 20° C.]:
14.5

CPY-2-O2
10.00%
V₀[20° C., V]:
2.09

CPY-3-O2
9.00%

CY-3-O2
10.00%

CY-3-O4
6.50%

CY-5-O4
6.00%

PYP-2-3
5.50%

PYP-2-4
3.50%

Example 217a

The mixture according to Example 217 additionally comprises 0.04% of

embedded image

Example 218

CCH-23
12.00%
Clearing point [° C.]:
110.7

CCH-34
10.00%
Δn [589 nm, 20° C.]:
0.1002

CCP-3-1
7.00%
Δε [1 kHz, 20° C.]:
−2.9

CCY-3-1
10.00%
ε_|| [1 kHz, 20° C.]:
3.2

CCY-3-O1
1.50%
ε_⊥ [1 kHz, 20° C.]:
6.1

CCY-3-O2
9.00%
γ₁[mPa · s, 20° C.]:
147

CCY-3-O3
7.50%
K₁[pN, 20° C.]:
17.3

CCY-4-O2
9.00%
K₃[pN, 20° C.]:
18.3

CPGP-4-3
2.00%
V₀[20° C., V]:
2.65

CPY-2-O2
8.00%

CPY-3-O2
8.00%

CY-3-O2
1.50%

CY-3-O4
3.00%

PCH-301
10.00%

PYP-2-3
1.50%

Example 218a

The mixture according to Example 218 additionally comprises 0.04% of

embedded image

Example 219

BCH-32
1.50%
Clearing point [° C.]:
74.3

CC-3-V
19.50%
Δn [589 nm, 20° C.]:
0.1089

CC-3-V1
5.50%
Δε [1 kHz, 20° C.]:
−3.8

CCP-3-1
8.00%
ε_|| [1 kHz, 20° C.]:
3.7

CCP-3-3
4.50%
ε_⊥ [1 kHz, 20° C.]:
7.5

CLY-3-O2
6.00%
γ₁[mPa · s, 20° C.]:
115

CPY-2-O2
10.50%
K₁[pN, 20° C.]:
13.7

CPY-3-O2
10.50%
K₃[pN, 20° C.]:
16.1

CY-3-O2
15.00%
V₀[20° C., V]:
2.18

CY-5-O2
9.00%

PY-3-O2
10.00%

Example 220

CY-3-O2
15.00%
Clearing point [° C.]:
74.7

CY-5-O2
6.50%
Δn [589 nm, 20° C.]:
0.1082

CCY-3-O2
11.00%
Δε [1 kHz, 20° C.]:
−3.0

CPY-2-O2
5.50%
ε_|| [1 kHz, 20° C.]:
3.6

CPY-3-O2
10.50%
ε_⊥ [1 kHz, 20° C.]:
6.6

CC-3-V
28.50%
γ₁[mPa · s, 20° C.]:
97

CC-3-V1
10.00%
K₁[pN, 20° C.]:
12.9

PYP-2-3
12.50%
K₃[pN, 20° C.]:
15.7

PPGU-3-F
0.50%
V₀[20° C., V]:
2.42

Example 221

PGUQU-3-F
5.00%
Clearing point [° C.]:
84.8

CCQU-3-F
8.00%
Δn [589 nm, 20° C.]:
0.1035

CCQU-5-F
4.00%
Δε [1 kHz, 20° C.]:
10.1

PUQU-3-F
13.50%
ε_|| [1 kHz, 20° C.]:
13.5

APUQU-2-F
3.00%
ε_⊥ [1 kHz, 20° C.]:
3.4

APUQU-3-F
6.00%
γ₁[mPa · s, 20° C.]:
86

CC-3-V
25.50%
K₁[pN, 20° C.]:
12.3

CC-3-V1
6.00%
K₃[pN, 20° C.]:
15.0

CCP-V-1
13.00%
V₀[20° C., V]:
1.17

CCP-V2-1
6.00%

PPGU-3-F
0.50%

BCH-3F.F
7.50%

BCH-2F.F
2.00%

Example 221a

The mixture according to Example 221 additionally comprises 0.25% of

embedded image

Example 222

CY-3-O2
12.00%
Clearing point [° C.]:
85.4

CY-5-O2
12.00%
Δn [589 nm, 20° C.]:
0.1039

CCY-3-O3
5.00%

CCY-4-O2
5.00%

CPY-2-O2
10.00%

CPY-3-O2
10.00%

CCY-2-1
4.00%

CC-3-V
16.00%

CCH-23
10.00%

CCH-34
4.00%

CCP-V-1
4.00%

PGP-2-5
2.00%

CPGP-5-2
3.00%

CPGP-5-3
3.00%

Example 223

CC-3-V
41.50%
Clearing point [° C.]:
74.5

CCY-3-O1
2.50%
Δn [589 nm, 20° C.]:
0.0984

CCY-3-O2
11.50%
Δε [1 kHz, 20° C.]:
−3.3

CCY-3-O3
5.00%
ε_|| [1 kHz, 20° C.]:
3.5

CPY-2-O2
5.00%
ε_⊥ [1 kHz, 20° C.]:
6.7

CPY-3-O2
12.00%
γ₁[mPa · s, 20° C.]:
89

CY-3-O2
9.50%
K₁[pN, 20° C.]:
13.2

PY-3-O2
7.00%
K₃[pN, 20° C.]:
15.2

PY-4-O2
3.00%
V₀[20° C., V]:
2.29

PYP-2-3
3.00%

Example 223a

The mixture according to Example 223 additionally comprises 0.001% of Irganox® 1076 (octadecyl 3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, BASF) and 0.4% of

embedded image

Example 224

Example 225

CC-3-V
41.50%
Clearing point [° C.]:
74.5

CCY-3-O1
2.50%
Δε [1 kHz, 20° C.]:
−3.3

CCY-3-O2
11.50%
K₁[pN, 20° C.]:
13.2

CCY-3-O3
5.00%
K₃[pN, 20° C.]:
15.2

CPY-2-O2
5.00%
V₀[20° C., V]:
2.29

CPY-3-O2
12.00%

CY-3-O2
9.50%

PY-3-O2
7.00%

PY-4-O2
3.00%

PYP-2-3
3.00%

Example 226

CC-3-V
26.00%
Clearing point [° C.]:
80.5

CCY-3-O2
6.00%
Δn [589 nm, 20° C.]:
0.1040

CCY-3-O3
6.00%
Δε [1 kHz, 20° C.]:
−4.0

CCY-4-O2
6.00%
ε_|| [1 kHz, 20° C.]:
3.7

CCY-5-O2
6.00%
ε_⊥ [1 kHz, 20° C.]:
7.7

CPY-2-O2
6.00%
γ₁[mPa · s, 20° C.]:
133

CPY-3-O2
6.00%
K₁[pN, 20° C.]:
13.6

PYP-2-3
7.00%
K₃[pN, 20° C.]:
15.4

CY-3-O2
15.00%
V₀[20° C., V]:
2.07

CY-5-O2
12.00%
LTS (bulk) [−20° C.]
>1000 h

BCH-32
4.00%

Example 226a

The mixture according to Example 226 additionally comprises 0.3% of

embedded image

Example 227

CC-3-V
26.50%
Clearing point [° C.]:
84.6

CC-3-V1
2.00%
Δn [589 nm, 20° C.]:
0.1076

CCH-34
2.00%
Δε [1 kHz, 20° C.]:
−4.0

CCY-3-O2
10.00%
ε_|| [1 kHz, 20° C.]:
3.7

CCY-3-O3
5.00%
ε_⊥ [1 kHz, 20° C.]:
7.7

CCY-4-O2
10.00%
γ₁[mPa · s, 20° C.]:
129

CPY-2-O2
10.00%
K₁[pN, 20° C.]:
13.9

CPY-3-O2
10.00%
K₃[pN, 20° C.]:
15.4

CY-3-O2
10.50%
V₀[20° C., V]:
2.06

PYP-2-3
9.00%

Y-4O-O4
5.00%

Example 227a

The mixture according to Example 227 additionally comprises 0.04% of

embedded image

and 0.015% of

embedded image

Example 228

APUQU-3-F
1.50%
Clearing point [° C.]:
110.1

CC-3-V
34.00%
Δn [589 nm, 20° C.]:
0.1208

CC-3-V1
5.00%
Δε [1 kHz, 20° C.]:
6.2

CCP-30CF₃
4.50%
ε_|| [1 kHz, 20° C.]:
9.2

CCP-V-1
10.50%
ε_⊥ [1 kHz, 20° C.]:
3.0

CCP-V2-1
6.00%
γ₁[mPa · s, 20° C.]:
104

CCVC-3-V
3.50%
K₁[pN, 20° C.]:
16.3

CPGP-5-2
4.50%
K₃[pN, 20° C.]:
18.9

CPGP-5-3
4.50%
V₀[20° C., V]:
1.70

DGUQU-4-F
3.00%

PGP-2-3
4.00%

PGP-2-4
2.00%

PGUQU-3-F
5.00%

PGUQU-4-F
3.50%

PGUQU-5-F
3.00%

PPGU-3-F
0.50%

PUQU-3-F
5.00%

Example 229

APUQU-3-F
1.50%
Clearing point [° C.]:
110

CC-3-V
35.50%
Δn [589 nm, 20° C.]:
0.1257

CCP-30CF₃
4.00%
Δε [1 kHz, 20° C.]:
6.3

CCP-V-1
12.00%
ε_|| [1 kHz, 20° C.]:
9.3

CCP-V2-1
4.50%
ε_⊥ [1 kHz, 20° C.]:
3.0

CCVC-3-V
4.00%
γ₁[mPa · s, 20° C.]:
104

CPGP-5-2
5.00%
K₁[pN, 20° C.]:
16.1

CPGP-5-3
5.00%
K₃[pN, 20° C.]:
18.7

DGUQU-4-F
3.00%
V₀[20° C., V]:
1.69

PGP-2-3
4.00%

PGP-2-4
2.00%

PGUQU-3-F
5.00%

PGUQU-4-F
3.50%

PGUQU-5-F
3.00%

PPGU-3-F
0.50%

PUQU-3-F
5.00%

PP-1-2V1
2.50%

Example 230

CY-3-O2
5.00%
Clearing point [° C.]:
102

CY-3-O4
15.00%
Δn [589 nm, 20° C.]:
0.2503

CCY-3-O2
6.00%
Δε [1 kHz, 20° C.]:
−4.0

CCY-3-O3
6.00%
ε_|| [1 kHz, 20° C.]:
4.3

CPY-2-O2
3.00%
ε_⊥ [1 kHz, 20° C.]:
8.3

PTP-102
5.00%
γ₁[mPa · s, 20° C.]:
392

PPTUI-3-2
15.00%
K₁[pN, 20° C.]:
19.5

PPTUI-3-4
11.00%
K₃[pN, 20° C.]:
24.0

PTP-302FF
12.00%
V₀[20° C., V]:
2.57

PTP-502FF
12.00%

CPTP-302FF
5.00%

CPTP-502FF
5.00%

Example 231

CC-3-V
35.00%
Clearing point [° C.]:
79.6

CCP-3-1
7.50%
Δn [589 nm, 20° C.]:
0.1095

CCPC-33
2.00%
Δε [1 kHz, 20° C.]:
−2.6

CCY-3-O2
7.00%
ε_|| [1 kHz, 20° C.]:
3.5

CCY-4-O2
7.50%
ε_⊥ [1 kHz, 20° C.]:
6.1

CPY-2-O2
8.50%
γ₁[mPa · s, 20° C.]:
92

CPY-3-O2
9.00%
K₁[pN, 20° C.]:
14.5

PP-1-2V1
5.50%

PY-3-O2
8.00%

PYP-2-3
5.00%

Y-4O-O4
5.00%

Example 231a

The mixture according to Example 231 additionally comprises 0.04% of

embedded image

and 0.02% of

embedded image

Example 232

CY-3-O4
25.00%
Clearing point [° C.]:
81.2

CY-5-O2
9.00%
Δn [589 nm, 20° C.]:
0.1531

CCY-3-O2
7.00%
Δε [1 kHz, 20° C.]:
−5.0

CCY-3-O3
4.50%
ε_|| [1 kHz, 20° C.]:
4.1

CPY-2-O2
10.00%
ε_⊥ [1 kHz, 20° C.]:
9.1

CPY-3-O2
10.00%
γ₁[mPa · s, 20° C.]:
298

PYP-2-3
14.00%
K₁[pN, 20° C.]:
13.1

PYP-2-4
10.00%
K₃[pN, 20° C.]:
15.9

CCP-V-1
3.00%
V₀[20° C., V]:
1.89

BCH-32
2.00%

PP-1-2V1
3.50%

PGP-2-3
2.00%

Example 232a

The mixture according to Example 232 additionally comprises 10% of

embedded image

Example 233

CC-3-V
29.00%
Clearing point [° C.]:
80.1

CCY-3-O1
8.00%
Δn [589 nm, 20° C.]:
0.1033

CCY-3-O2
6.00%
Δε [1 kHz, 20° C.]:
−4.5

CCY-4-O2
2.00%
ε_|| [1 kHz, 20° C.]:
4.0

CLY-3-O2
8.50%
ε_⊥ [1 kHz, 20° C.]:
8.4

CLY-3-O3
7.50%
γ₁[mPa · s, 20° C.]:
98

CPY-2-O2
10.00%
K₁[pN, 20° C.]:
13.2

CPY-3-O2
7.50%
K₃[pN, 20° C.]:
14.6

CY-3-O2
6.50%
V₀[20° C., V]:
1.91

PY-3-O2
10.00%

Y-4O-O4
5.00%

Example 233a

The mixture according to Example 233 additionally comprises 0.04% of

embedded image

and 0.02% of

embedded image

Example 234

CC-3-V
34.00%
Clearing point [° C.]:
79.7

CCPC-33
1.00%
Δn [589 nm, 20° C.]:
0.1095

CCY-3-1
4.00%
Δε [1 kHz, 20° C.]:
−3.5

CCY-3-O2
10.00%
ε_|| [1 kHz, 20° C.]:
3.7

CCY-4-O2
9.50%
ε_⊥ [1 kHz, 20° C.]:
7.2

CPY-2-O2
9.00%
γ₁[mPa · s, 20° C.]:
105

CPY-3-O2
10.00%
K₁[pN, 20° C.]:
14.0

PP-1-2V1
1.50%

PY-3-O2
10.00%

PYP-2-3
6.00%

Y-4O-O4
5.00%

Example 234a

The mixture according to Example 234 additionally comprises 0.04% of

embedded image

and 0.02% of

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Example 235

CC-3-V
19.00%
Clearing point [° C.]:
80.2

CCY-3-O1
5.00%
Δn [589 nm, 20° C.]:
0.1104

CCY-3-O2
7.00%
Δε [1 kHz, 20° C.]:
−3.7

CCY-3-O3
12.00%
ε_|| [1 kHz, 20° C.]:
3.6

CCY-4-O2
8.00%
ε_⊥ [1 kHz, 20° C.]:
7.3

CPY-2-O2
9.50%
γ₁[mPa · s, 20° C.]:
143

CPY-3-O2
10.00%
K₁[pN, 20° C.]:
12.9

CY-3-O2
12.00%
K₃[pN, 20° C.]:
14.5

CY-3-O4
3.50%
V₀[20° C., V]:
2.09

PP-1-3
7.00%

PP-1-4
7.00%

Example 236

CY-3-O2
15.00%
Clearing point [° C.]:
79.1

CY-5-O2
9.50%
Δn [589 nm, 20° C.]:
0.0944

CCY-3-O1
4.00%
Δε [1 kHz, 20° C.]:
−4.0

CCY-3-O2
6.00%
ε_∥ [1 kHz, 20° C.]:
3.7

CCY-3-O3
4.50%
ε_⊥ [1 kHz, 20° C.]:
7.7

CCY-4-O2
6.00%
γ₁[mPa · s, 20° C.]:
120

CCY-5-O2
4.00%
K₁[pN, 20° C.]:
13.4

CPY-2-O2
8.00%
K₃[pN, 20° C.]:
15.4

CPY-3-O2
9.00%
V₀[20° C., V]:
2.06

PYP-2-4
2.00%

CC-3-V
32.00%

Example 236a

The mixture according to Example 236 additionally comprises 0.015% of

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Example 237

Example 237a

The mixture according to Example 237 additionally comprises 0.015% of

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Example 238

APUQU-3-F
4.00%
Clearing point [° C.]:
85.7

CC-3-V
41.00%
Δn [589 nm, 20° C.]:
0.1004

CC-3-V1
6.50%
Δε [1 kHz, 20° C.]:
6.8

CCP-V-1
12.00%
ε_∥ [1 kHz, 20° C.]:
9.8

CCP-V2-1
11.00%
ε_⊥ [1 kHz, 20° C.]:
3.0

CPGP-5-3
2.50%
γ₁[mPa · s, 20° C.]:
69

PGUQU-3-F
5.00%
K₁[pN, 20° C.]:
13.0

PGUQU-4-F
4.00%
K₃[pN, 20° C.]:
16.6

PGUQU-5-F
3.50%
V₀[20° C., V]:
1.47

PUQU-3-F
10.50%

Example 239

CC-3-V
32.50%
Clearing point [° C.]:
74.7

CC-3-V1
1.50%
Δn [589 nm, 20° C.]:
0.1090

CCY-3-O1
8.50%
Δε [1 kHz, 20° C.]:
−3.8

CCY-3-O2
5.50%
ε_∥ [1 kHz, 20° C.]:
3.7

CLY-3-O2
10.00%
ε_⊥ [1 kHz, 20° C.]:
7.5

CPY-3-O2
9.50%
γ₁[mPa · s, 20° C.]:
102

PY-3-O2
10.50%
K₁[pN, 20° C.]:
13.8

CY-3-O2
14.00%
K₃[pN, 20° C.]:
15.7

PYP-2-3
8.00%
V₀[20° C., V]:
2.15

Example 240

CC-3-V
33.00%
Clearing point [° C.]:
80.2

CCY-3-O1
6.00%
Δn [589 nm, 20° C.]:
0.1116

CCY-3-O2
8.00%
Δε [1 kHz, 20° C.]:
−4.1

CCY-4-O2
2.50%
ε_∥ [1 kHz, 20° C.]:
3.7

CPY-2-O2
8.00%
ε_⊥ [1 kHz, 20° C.]:
7.8

CPY-3-O2
12.00%
γ₁[mPa · s, 20° C.]:
119

CLY-3-O2
8.00%
K₁[pN, 20° C.]:
14.5

PY-1-O4
1.50%
K₃[pN, 20° C.]:
16.1

PY-3-O2
10.00%
V₀[20° C., V]:
2.09

PY-4-O2
8.00%

CY-3-O2
3.00%

Example 240a

The mixture according to Example 240 additionally comprises 0.008% of

embedded image

Example 241

BCH-3F.F
5.00%
Clearing point [° C.]:
101

BCH-3F.F.F
8.50%
Δn [589 nm, 20° C.]:
0.0925

CC-3-V1
10.00%
Δε [1 kHz, 20° C.]:
5.3

CC-4-V
12.50%
ε_∥ [1 kHz, 20° C.]:
8.3

CCG-V-F
9.00%
γ₁[mPa · s, 20° C.]:
119

CCP-2F.F.F
3.50%
K₁[pN, 20° C.]:
14.2

CCP-3-1
4.50%
K₃[pN, 20° C.]:
19.9

CCP-3F.F.F
10.00%
V₀[20° C., V]:
1.73

CCP-V-1
12.00%

CCP-V2-1
7.00%

ECCP-5F.F
13.00%

PUQU-3-F
5.00%

Example 242

APUQU-2-F
4.00%
Clearing point [° C.]:
86.4

APUQU-3-F
6.00%
Δn [589 nm, 20° C.]:
0.1030

PUQU-3-F
10.00%
Δε [1 kHz, 20° C.]:
7.0

CCQU-3-F
2.00%
ε_∥ [1 kHz, 20° C.]:
10.1

CCP-V-1
13.00%
γ₁[mPa · s, 20° C.]:
71

CCP-V2-1
7.00%
K₁[pN, 20° C.]:
13.2

PGUQU-3-F
6.00%
K₃[pN, 20° C.]:
15.8

CC-3-V
40.00%
V₀[20° C., V]:
1.45

CC-3-V1
5.50%

PGP-2-3
3.00%

CPGP-5-2
3.00%

PPGU-3-F
0.50%

Example 242a

The mixture according to Example 242 additionally comprises 0.25% of RM-41

embedded image

Example 243

Y-4O-O4
9.00%
Clearing point [° C.]:
96

CY-3-O4
12.00%
Δn [589 nm, 20° C.]:
0.0796

CCY-3-O1
5.00%
Δε [1 kHz, 20° C.]:
−2.3

CCY-3-O2
5.50%
ε_∥ [1 kHz, 20° C.]:
3.4

CCY-3-O3
5.50%
ε_⊥[1 kHz, 20° C.]:
5.7

CC-4-V
15.00%
K₁[pN, 20° C.]:
14.8

CC-5-V
5.50%
K₃[pN, 20° C.]:
16.6

CC-3-V1
6.50%
V₀[20° C., V]:
2.85

CCP-V-1
11.00%

CCP-V2-1
10.00%

CH-33
3.00%

CH-35
3.00%

CCPC-33
4.50%

CCPC-34
4.50%

Example 244

Y-4O-O4
11.50%
Clearing point [° C.]:
95

CCY-3-O1
4.00%
Δn [589 nm, 20° C.]:
0.1697

CCY-3-O2
5.00%
Δε [1 kHz, 20° C.]:
−4.4

CCY-3-O3
2.50%
ε_∥ [1 kHz, 20° C.]:
4.1

CPY-3-O2
4.00%
ε_⊥ [1 kHz, 20° C.]:
8.5

CC-4-V
10.00%
γ₁[mPa · s, 20° C.]:
193

CCP-V-1
6.00%
K₁[pN, 20° C.]:
16.8

CCP-V2-1
12.00%
K₃[pN, 20° C.]:
19.5

BCH-32
5.00%
V₀[20° C., V]:
2.23

PTP-302FF
12.00%

PTP-502FF
12.00%

CPTP-302FF
8.00%

CPTP-502FF
8.00%

Example 245

CY-3-O2
10.00%
Clearing point [° C.]:
80.7

PY-1-O4
5.00%
Δn [589 nm, 20° C.]:
0.1123

PY-3-O2
6.50%
Δε [1 kHz, 20° C.]:
−4.2

PY-4-O2
3.00%
ε_∥ [1 kHz, 20° C.]:
3.8

CCY-3-O1
5.00%
ε_⊥ [1 kHz, 20° C.]:
8.0

CCY-3-O2
5.00%
γ₁[mPa · s, 20° C.]:
150

CCY-4-O2
3.00%
K₁[pN, 20° C.]:
14.6

CLY-3-O2
8.00%
K₃[pN, 20° C.]:
15.2

CPY-2-O2
10.00%
V₀[20° C., V]:
2.01

CPY-3-O2
10.00%

CCH-301
8.50%

CCH-23
12.00%

CCH-34
4.50%

CCH-35
3.00%

BCH-32
6.50%

Example 246

PCH-3N.F.F
7.00%
Clearing point [° C.]:
91

CP-1V-N
18.00%
Δn [589 nm, 20° C.]:
0.2003

CP-V2-N
16.00%
Δε [1 kHz, 20° C.]:
10.3

CC-4-V
12.00%
ε_∥ [1 kHz, 20° C.]:
14.3

CCP-V-1
9.00%
ε_⊥ [1 kHz, 20° C.]:
4.0

PPTUI-3-2
18.00%

PPTUI-3-4
20.00%

Example 247

BCH-32
8.00%
Clearing point [° C.]:
96

CC-3-V
24.50%
Δn [589 nm, 20° C.]:
0.1195

CCP-V-1
8.00%
Δε [1 kHz, 20° C.]:
−2.7

CCY-2-1
2.00%
ε_∥ [1 kHz, 20° C.]:
3.3

CCY-3-O1
6.00%

CCY-3-O3
2.00%

CLY-3-O2
5.00%

CLY-3-O3
5.00%

CPY-2-O2
6.50%

CPY-3-O2
6.00%

CY-3-O2
6.00%

CY-3-O4
3.00%

CY-5-O2
5.00%

PYP-2-3
6.50%

PYP-2-4
6.50%

Example 247a

The mixture according to Example 247 additionally comprises 0.03% of

embedded image

and 0.4% of

embedded image

Example 248

BCH-32
2.00%
Clearing point [° C.]:
80

CC-3-V
31.00%
Δn [589 nm, 20° C.]:
0.1083

CCY-3-O1
4.50%
Δε [1 kHz, 20° C.]:
−3.9

CCY-3-O2
6.00%
ε_∥ [1 kHz, 20° C.]:
3.7

CCY-4-O2
7.00%
γ₁[mPa · s, 20° C.]:
120

CLY-3-O2
8.00%
K₁[pN, 20° C.]:
12.7

CPY-2-O2
7.50%
K₃[pN, 20° C.]:
15.1

CPY-3-O2
10.00%
V₀[20° C., V]:
2.07

CY-3-O2
6.25%

PY-3-O2
5.75%

PY-1-O4
6.00%

PY-4-O2
6.00%

Example 248a

The mixture according to Example 248 additionally comprises 0.005% of

embedded image

Example 249

CC-3-V
37.00%
Clearing point [° C.]:
75.2

CCY-3-O1
5.00%
Δn [589 nm, 20° C.]:
0.1016

CCY-3-O2
5.00%
Δε [1 kHz, 20° C.]:
−3.7

CCY-4-O2
4.00%
ε_∥ [1 kHz, 20° C.]:
3.7

CLY-3-O2
7.00%
γ₁[mPa · s, 20° C.]:
99

CPY-2-O2
9.00%
V₀[20° C., V]:
2.13

CPY-3-O2
10.00%

CY-3-O2
11.50%

PY-3-O2
11.50%

Example 249a

The mixture according to Example 249 additionally comprises 0.015% of

embedded image

Example 249b

The mixture according to Example 249 additionally comprises 0.005% of

embedded image

Example 250

PUQU-3-F
8.00%
Clearing point [° C.]:
96.3

APUQU-2-F
6.00%
Δn [589 nm, 20° C.]:
0.0994

APUQU-3-F
6.00%
Δε [1 kHz, 20° C.]:
9.6

CDUQU-3-F
6.00%
γ₁[mPa · s, 20° C.]:
87

DPGU-4-F
6.00%
K₁[pN, 20° C.]:
14.5

CCGU-3-F
4.00%
K₃[pN, 20° C.]:
16.6

CC-3-V
36.00%
V₀[20° C., V]:
1.29

CC-3-V1
8.00%

CCP-V-1
12.00%

CCP-V2-1
6.00%

CBC-33F
1.50%

PPGU-3-F
0.50%

PROCESS FOR THE PURIFICATION OF A LIQUID-CRYSTAL MIXTURE

Information

Publication Number

Date Filed

Date Published

Inventors

Original Assignees

CPC

International Classifications

Abstract

Description

Claims

Priority Claims (1)

PCT Information