"Ultralow-threshold graded-index separate-confinement single quantum well buried heterostructure (Al,Ga) As Lasers with high reflectivity coatings," by P. L. Derry, et al., Applied Physics Letter 50 (25), pp. 1773-1775, Jun. 22, 1987. |
"Channelled substrate (100) GaAs MBE growth and lateral p-n junction formation of lasers," by H. P. Meier, et al., Inst. Physics Conference Serial No. 91: Ch. 7, pp. 609-612, Paper presented at International Symposium GaAs & Related Compounds, Heraklion, Greece, Sep. 28-Oct. 1, 1987. |
"Patterned quantum well semiconductor injection laser grown by molecular beam epitaxy," by E. Kapon, et al., Applied Physics Letter 52 (8), pp. 607-609, Feb. 22, 1988. |
"Problems related to the formation of lateral p-n junctions on channel substrate (100) GaAs for lasers," by H. P. Meier, et al., J. Vac. Sci. Technology B6 (2), pp. 692-695, Mar./Apr. 1988. |