Claims
- 1. A method of producing an ultra smooth diamond film having a surface roughness in the range of about 14 nanometers to about 100 nanometers, comprising the step of:adding nitrogen gas to methane/hydrogen plasma created by a microwave discharge, wherein said plasma provides chemical vapor deposition for the production of said diamond film.
- 2. The method of claim 1, wherein said diamond film has a hardness up to 90% of a single crystal diamond value.
- 3. The method of claim 1, wherein said diamond film adheres to metals.
- 4. The method of claim 1, wherein said nitrogen gas is added in the concentration range from about 2% to about 20% of the methane (CH4) used in said plasma.
- 5. The method of claim 4, wherein said nitrogen gas is 10% of the methane used in said plasma.
- 6. The method of claim 1, wherein said chemical vapor deposition is under a pressure range from about 100 Torr to about 150 Torr.
- 7. The method of claim 1, wherein said plasma uses CH4 in the concentration range of 5% to 15% in a balance of H2.
- 8. The method of claim 7, wherein said CH4 is 15% of H2 used in said plasma.
- 9. The method of claim 1, wherein said chemical vapor deposition is held under a constant substrate temperature between 700° C. to 850° C.
- 10. A method of depositing an ultra smooth diamond film having a surface roughness in the range of about 14 nanometers to about 100 nanometers on a metal, comprising the step of:adding nitrogen gas to methane/hydrogen plasma created by a microwave discharge, wherein said plasma provides chemical vapor deposition for depositing said diamond film on said metal.
- 11. The method of claim 6, wherein said nitrogen gas is added in the concentration range from about 2% to about 20% of the methane (CH4) used in said plasma.
- 12. The method of claim 10, wherein said metal is selected from the group consisting of titanium implant, cobalt chrome femoral head, knee implant, and a magnetic video or audio tape and a recording head in a magnetic storage media.
CROSS-REFERENCE TO RELATED APPLICATION
This non-provisional application claims benefit of priority of provisional application U.S. Ser. No. 60/102,693, filed Oct. 1, 1998, now abandoned.
FEDERAL FUNDING NOTICE
The present invention was funded in part by NASA and National Science Foundation (NSF). Consequently, the United States government has certain rights in this invention.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
5055318 |
Deutchman et al. |
Oct 1991 |
|
5523121 |
Anthony et al. |
Jun 1996 |
|
Provisional Applications (1)
|
Number |
Date |
Country |
|
60/102693 |
Oct 1998 |
US |