Claims
- 1. A method of manufacturing a semiconductor device using shallow trench isolation, comprising:forming a dielectric stack outwardly from a semiconductor substrate, the dielectric stack comprising: a first sacrificial dielectric layer disposed outwardly from the semiconductor substrate; and a second sacrificial dielectric layer disposed outwardly from the first sacrificial dielectric layer; wherein the first sacrificial dielectric layer is selectively etchable from the second sacrificial dielectric layer; removing a portion of the first sacrificial dielectric layer, a portion of the second sacrificial dielectric layer, and a portion of the substrate to form a trench within the semiconductor substrate and the dielectric stack; forming a first isolation dielectric region within the trench using thermal oxidation; forming a second isolation dielectric region on said first isolation dielectric region within the trench; removing the second sacrificial dielectric layer; and after removing the second sacrificial dielectric layer, depositing a dielectric material to form a third sacrificial dielectric layer outwardly from the first sacrificial dielectric layer, wherein a combined thickness of the first sacrificial dielectric layer and the third sacrificial dielectric layer comprises at least 100 Angstroms.
- 2. The method in claim 1, wherein the first sacrificial dielectric layer comprises a dielectric material selected from the group consisting of oxide and oxi-nitride, and the second sacrificial dielectric layer comprises nitride.
- 3. The method in claim 1, wherein the deposited dielectric material forming the third sacrificial dielectric layer comprises a dielectric material selected from the group consisting of oxide, oxi-nitride, and nitride.
Parent Case Info
This application claims priority under 35 USC §119(e)(1) of provisional application Serial No. 60/326,068, filed Sep. 27, 2001.
US Referenced Citations (8)
Provisional Applications (1)
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Number |
Date |
Country |
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60/326068 |
Sep 2001 |
US |