Claims
- 1. A method of producing a silicon nitride sintered member having reduced thermal conductivity, comprising:
- providing a silicon nitride sintered body;
- roughening or activating a surface of said body; and
- providing a heat insulating layer on said surface, said layer consisting essentially of zirconia, and having a thickness of not greater than 100 microns.
- 2. The method according to claim 1, further comprising the step of applying a peliminary intermediate layer on said silicon nitride sintered body, wherein the thermal expansion coefficient of said intermediate layer is between that of the silicon nitride sintered body and that of the heat insulating layer.
- 3. The method according to claim 1, wherein said surface is roughened or activiated by at least one process selected from the group consisting of polishing with abrasive grits, oxidizing by heating in air, and chemical etching.
- 4. The method according to claim 1, wherein said heat insulating layer is provided on said surface by at least one process selected from the group consisting of applying a slurry, spraying, and plasma spraying.
- 5. The method according to claim 1, wherein said silicon nitride body is formed by a process selected from the group consisting of pressureless sintering, hot pressing, hot isostatic pressing, and reaction sintering.
Priority Claims (2)
Number |
Date |
Country |
Kind |
169782 |
Aug 1985 |
JPX |
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213493 |
Sep 1985 |
JPX |
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Parent Case Info
This application is a Rule 60 Divisional Application of Ser. No. 112,053, filed Oct. 22, 1987, now U.S. Pat. No. 4,816,349, which in turn is a Rule 62 Continuation Application of Ser. No. 06/887,654, filed July 21, 1986, now abandoned.
US Referenced Citations (15)
Foreign Referenced Citations (10)
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DEX |
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JPX |
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Non-Patent Literature Citations (1)
Entry |
Hawley, The Condensed Chemical Dictionary, 9th Edition, p. 945. |
Divisions (1)
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Number |
Date |
Country |
Parent |
112053 |
Oct 1987 |
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Continuations (1)
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Number |
Date |
Country |
Parent |
887654 |
Jul 1986 |
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