Claims
- 1. A process for producing a reaction bonded silicon carbide body, the process comprising:combining a carbon source, silicon carbide powder, a binder and an additive selected from one or more of the group consisting of boron nitride, aluminum nitride and titanium diboride to form a raw batch mixture, wherein raw batch mixture includes about 10 wt % to about 30 wt % carbon source, and about 88 wt % to no less than 55 wt % silicon carbide powder; compacting the raw batch mixture into a green body; and exposing the green body to a liquid silicon metal to produce a reaction bonded silicon carbon body having a density of at least 2.8 g/cc.
- 2. A process as in claim 1, wherein raw batch mixture includes about 88 wt % to no less than 60 wt % silicon carbide powder.
- 3. A process as in claim 1, wherein the carbon source is selected from the group consisting of graphite, carbon black, and pyrolized resins.
- 4. A process as in claim 1, wherein the raw batch mixture further includes about 1 wt % to about 5 wt % binder, about 4 wt % to about 8 w % of a reactive agent and about 1 wt % to about 25 wt % additive.
- 5. A process as in claim 4, wherein the binder is selected from one or more of the group consisting of polyvinyl alcohol, acrylic resins, coal tar pitch, long chain fatty materials, metallic stearates, sugars, starches, alginates and polystyrene, and wherein the reactive agent is selected from one or more of the group consisting of titanium, titanium dioxide, nickel, cobalt, and manganese.
- 6. A process as in claim 1, wherein the combining step further comprises mixing the silicon carbide powder into a slurry of the carbon source, a reactive agent, and the binder to form a secondary slurry, drying the secondary slurry to form a stock, and blending the stock with the additive.
- 7. A process as in claim 1, further comprising heating the green body to a temperature in the range from about 1500° C. to about 2000° C. during the siliconization step.
- 8. A method for producing a reaction bonded silicon carbide body, the method comprising:incorporating boron nitride in a mixture of carbon and silicon carbide powders to form a raw batch mixture including 88 wt % to 55 wt % silicon carbide powder; and siliconizing the mixture to produce a reaction bonded silicon carbide body having a density of at least 2.80 g/cc and boron nitride particles dispersed therein.
- 9. A method as in claim 8, further comprising incorporating a reactive agent into the mixture to bond the boron nitride to the silicon carbide body.
CROSS-REFERENCES TO RELATED APPLICATIONS
This application is a continuation in part application Ser. No. of 09/104,664, filed Jun. 25, 1998, now abandoned the complete disclosure of which is herein incorporated by reference.
US Referenced Citations (12)
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
09/104664 |
Jun 1998 |
US |
Child |
09/602798 |
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US |