Patent Application
20100273387
This invention relates to a processing apparatus, which adheres and fixes a mask to an object subjected to processing such as film formation and forms a desired pattern on the surface of the object other than an area covered by the mask, and a method of manufacturing an electron emission element and an organic EL display using the processing apparatus.
An apparatus for manufacturing an image display apparatus includes, as an example, a glass substrate manufacturing apparatus for a flat panel display typified by an organic electroluminescence element. With regard to such a substrate for a display, in general, a desired pattern is formed on the substrate with desired accuracy, whereby desired functions are imparted to the substrate.
As a pattern formation method, there have been known a vacuum deposition method, a sputtering method, a photolithography method, and a screen printing method. However, at present, a display is required to have a higher-definition display performance. Thus, a pattern formation apparatus is required to have more highly fine pattern formation accuracy.
As shown in Patent Document 1, the vacuum deposition method, as with the sputtering method, has been known as a method that can realize a highly fine pattern at low cost and with high reliability, in comparison with other methods.
In particular, in the production of a display using an organic electroluminescence element as a display element, the vacuum deposition method has attracted attention as a dry process that causes very few moisture damages on an element that may occur in a wet process typified by photolithography.
For example, in the pattern film formation by means of vacuum evaporation, in such a state that a mask is adhered to a surface of a substrate as an object to be processed, a material is deposited through the opening of the mask previously formed in the pattern portion, whereby a desired pattern is formed on the substrate.
In the vacuum evaporation, the finishing accuracy of a mask directly depends on the finishing accuracy of the pattern, and therefore, means for forming a minute pattern on a mask with high accuracy is required to be developed (for example, see, Patent Document 2).
In the formation of a minute pattern on a mask, the thickness of the mask should be reduced, and, at the same time, for the purpose of ensuring adherence with an object to be processed and the pattern accuracy as a mask, the mask is required to have such flatness that deflection and creases of the mask are prevented from occurring.
Based on the above purpose, there has been known a method shown in Patent Document 3. In this method, a metal mask with a thickness of not more than 500 μm is fixed to a frame while tension is applied to the mask.
The metal mask has such a constitution that the outer peripheral edge of the mask is welded together with a frame by application of tension, and therefore, if tension is always applied to the mask, the reaction force is always applied to the frame at the same time. Consequently, although the flatness of the mask is ensured, the frame is required to have a high rigidity.
This is because the reaction force against the tension applied to the mask is required to be ensured by the rigidity of the frame. If the rigidity of the frame is small, the frame itself is deformed by the reaction force, and the tension is relieved, whereby predetermined accuracy cannot be maintained.
Based on the above reasons, in order to realize minute pattern accuracy, the frame of the mask is required to have a high rigidity, which means the increase of the weight of the metal mask.
The multi-piece molding based on the request for the improvement of the processing performance and the increase of the size of an object to be processed itself cause the increase of the size and weight of a mask. For example, there is a metal mask for 55 inch size (about 130×800 mm) having a weight of 300 kg.
When the size and weight of a mask are increased, a mechanism that aligns the position of the mask with an object to be processed and a mechanism that moves the mask are increased in size, whereby it is difficult for a film formation apparatus to maintain high accuracy.
Thus, the film formation apparatus is required to include means that can be simply handled while high accuracy is maintained even when a heavy mask is used.
In addition, in a film formation process in a vacuum deposition method, a pattern formation surface of an object to be processed is required to be directed downward, generally called face-down (deposition-up), so as to face an evaporation source.
In the process for aligning a position of an object to be processed with a mask, in general, the mask and/or the object to be processed is slightly moved in such a state that they are placed on a base having flatness with fixed accuracy.
When the process from the positional alignment to the film formation is considered, there is required means for maintaining the positions of the mask and the object aligned with each other even in a state of being turned upside down, without causing positional deviation.
Based on the above, in addition to correspondence to the increase in size of an object to be processed, and, in order to ensure highly fine pattern accuracy, means for fixing a mask is required to hold and fix a mask significantly increased in weight, without causing positional deviation. Further, for the same purposes, the mask fixing means is required to ensure adhesion between the mask and the object to be processed.
As a conventional technique for realizing the above requirements, Patent Document 4 proposes such means that, for example, in a multi-piece molding device, an area is divided into small size, and a mask is arranged on the divisional areas, or a deposition process is applied thereto, whereby the weight of the mask can be reduced while high positional alignment accuracy is ensured.
As the fixing means for a mask and an object to be processed, a magnet is used for fixing a metal mask which is a magnetic body; however, a necessary fixing force is increased as the weight of the mask is increased, whereby damage caused by contact between the mask and the object to be processed and positional deviation caused by impact may occur.
In order to prevent the occurrence of damage and positional deviation in the fixing of a mask through a magnet, Patent Document 5 proposes that an object to be processed and a mask are formed of a semiconductor material with high flatness such as silicon, and an electrostatic chuck is used in the means that fixes the object to be processed and the mask.
Even when tension is applied to a mask membranous plane (membrane) of a mask, which is a portion having a desired pattern opening, the mask membranous plane has a slight deflection, and thus there exists a difference in the flatness of the mask relative to the rigidity of an object to be processed.
Therefore, when the mask and an object to be processed are in contact with each other, the adherence therebetween decreases, resulting in creases of the mask. Consequently, when a gap is generated between the contact surfaces between them, a deposition material infiltrates a place other than the opening of the mask, leading to the reduction of the finishing accuracy of the pattern of the mask.
The reduction of the pattern accuracy is called “film-formation blur”. In order to prevent the film-formation blur, the adhesion between a mask and an object to be processed is required to be enhanced as much as possible.
As a conventional technique for realizing the above requirement, Patent Document 6 proposes a method of fixing a mask and an object to be processed in sequence from one side end of the mask toward the other opposite side end, whereby the adhesion area between the mask and the substrate is increased.
However, in the divided deposition method shown in Patent Document 4 and using small-sized masks disposed in each divided processing region, there is a problem that it takes time to align the positions of the masks, resulting in the increase of the device tact time. Further, there is also a problem that the divided deposition method cannot easily correspond to the increase in size of a substrate, on which a large number of the same patterns are deposited all together for the sake of the multi-piece molding.
Meanwhile, the means that fixes an object to be processed using the electrostatic chuck disclosed in Patent Document 5 has the following problem.
When the object to be processed is a glass, the glass which is an insulator has a high volume resistivity, and thus a satisfactory electrostatic adsorption power is not generated under normal temperature condition. Thus, in order to decrease the volume resistivity, the procedure of rising and falling temperature and the addition of a heating mechanism are required for a film formation apparatus. Alternatively, the film formation apparatus requires a new process of applying a conductive film onto the glass so that the glass is rendered electrostatically adsorbable.
Thus, when a film is formed on a glass, an additional measure is required, and consequently, there arises a new problem of causing increase in a tact time and costs of the apparatus.
The procedure for increasing the adhesion between the mask and the object to be processed, disclosed in Patent Document 6 has such a problem that, because the mask and the object to be processed are always fixed in sequence from one side end, the degree of freedom upon change in the size of the object to be processed is limited.
Especially when a large-sized substrate will be processed, there occurs such a problem that the degree of design freedom and expandability of a processing apparatus are limited.
It is thus an object of the present invention to provide a processing apparatus which can solve the above problems of the prior arts. Especially, the processing apparatus can solve the problems of the prior art assuming that a mask used in the apparatus is formed of a magnetic material in a thin film form, and tension is applied to a membranous plane of the mask.
One object of the present invention is to realize highly accurate batch pattern film formation for a mask, which is significantly increased in size according to the demand for increasing the size of an object to be processed and thereby has a concern that the pattern accuracy is reduced. Another object is to provide an apparatus and a method that can prevent the occurrence of damage and positional deviation in the fixing of a mask without using a component such as an electrostatic chuck. A further object is to provide an apparatus, which can easily correspond to the demand for increasing the size of an object to be processed and has a high expandability, and a method of manufacturing a display using the apparatus.
One embodiment of the present invention relates to a processing apparatus that processes an object to be processed by using a mask mechanism having a magnetic mask member and a magnetic mask frame fixing the periphery of the magnetic mask member. In order to solve the above problems, the processing apparatus is characterized by including a plurality of first fixing means and second fixing means. The first fixing means fix the magnetic mask member and can each independently operate. The second fixing means operates independently from the first fixing means and fixes the magnetic mask frame.
Another embodiment of the present invention relates to a method of manufacturing an electron emission element and an organic EL element that is characterized by comprising a step of processing an object to be processed, using the processing apparatus of the above embodiment.
According to the present invention, even when a mask, which corresponds to the demand for increasing the size of an object to be processed, is used, the highly accurate batch pattern film formation can be realized, and, at the same time, the object to be processed can be prevented from being damaged. Further, it is possible to easily correspond to the demand for increasing the size of the object to be processed.
Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the embodiment, a deposition processing is shown as an example of the processing according to the present invention; however, the processing according to the present invention is not limited to the deposition processing.
In the present invention, a mask used in a processing apparatus is formed of a magnetic material in a thin film form, and tension is applied to a membranous plane of the mask.
A processing apparatus 1 includes fixing means (second fixing means) 101 for fixing a mask frame 200a and fixing means (first fixing means) 102 for fixing a mask member (hereinafter also referred to as a “mask membranous plane”) 200b.
The second and first fixing means 101 and 102 move in a base 400 respectively through holes 103a and 103b.
In the present embodiment, a permanent magnet applying a magnetic force to a mask 200, formed of a magnetic material, is used as the second and first fixing means 101 and 102.
The second and first fixing means 101 and 102 will be described in detail. The processing apparatus 1 of
The processing apparatus further includes a plurality of second fixing means 101 which can each independently operate.
The first fixing means 102 can independently operate without being affected by the operation of the second fixing means 101. The second fixing means 101 also can independently operate without being affected by the operation of the first fixing means 102. Also, the first fixing means 102 can each independently operate.
Next, control means that controls the operation of the first and second fixing means 102 and 101 will be specifically described.
First, the first and second fixing means 102 and 101 are connected respectively to driving mechanisms 109 and 106, which can each independently operate, such as a servo motor, a pulse motor, and a pneumatic driving mechanism using a pressure of air.
Further, the driving mechanism 104 for the first fixing means 102 and the driving mechanism 106 for the second fixing 101 are connected to control means 105 that controls driving of the first and second fixing means 102 and 101.
The driving mechanism 104 for the first fixing means 102 and the driving mechanism 106 for the second fixing means 101 are controlled by the control means 105 as follows.
The individual driving mechanisms 104 connected to the first fixing means 102 can be each independently controlled. Also, control can be performed on the driving mechanisms 104 such that one or more driving mechanisms 104 operate in synchronism with each other.
The individual driving mechanisms 106 connected to the second fixing means 101 can also be each independently controlled.
The individual driving mechanisms 104 connected to the first fixing means 102 can be independently controlled without being affected by the operation of the driving mechanisms 106.
The individual driving mechanisms 106 connected to the second fixing means 101 can also be independently controlled without being affected by the operation of the driving mechanisms 104.
The first and second fixing means 101 and 102 can be operated by the above control method, as described above.
The driving mechanisms 104 and 106 that drive the mask frame 200a and the mask membranous plane 200b are not necessarily controlled by the same control means 105, and they may be controlled by different control means.
The holes 103a and 103b may penetrate through the base 400 having the holes 103a and 103b, or one ends thereof may be sealed with remaining predetermined thickness.
The other components 107 to 109 and 111 will be described as follows.
A gate valve 107 is used for communicating and blocking between the inside of a vessel 111 of the processing apparatus 1 and evacuation means 109. The component 108 is a evacuation tube.
The evacuation means 109 evacuates the inside of the vessel 111 of the processing apparatus 1 and is, for example, a turbomolecular pump, a mechanical booster pump, and a cryopump.
In the processing apparatus shown in
Thereafter, after the mask fixing operation to be described later, the mask 200 is fixed onto the object to be processed 300 on the base 400, as shown in
The mask 200 is formed of metal, and, for example, an iron-based magnetic material is required to be used in the mask 200. Especially, in order to reduce thermal expansion due to radiation heat input in the deposition, a low thermal expansion material such as an iron-nickel alloy, for example, an invar material is used.
As a desired pattern, small openings are formed on the mask membranous plane 200b, which is a magnetic mask member, by etching or the like. The mask membranous plane is required to reduce the thickness as the pattern accuracy becomes highly fine, and a metal film can be processed to have a thickness of not more than 50 microns.
The mask membranous plane 200b is fixed at its peripheral edges to the mask frame 200a, which is a magnetic mask frame, by welding or the like in such a state that tension is applied to the mask membranous plane 200b.
The mask frame 200a is required to have such rigidity that deformation, occurring due to the reaction force against the tension applied to the mask membranous plane 200b, is not more than a required value as described below. The tension required for maintaining the flatness of the mask membranous plane 200b is determined from properties of matter (elastic coefficient) of a mask material and thermal deformation of the mask itself upon deposition, and the tension of about 2.9 N/m (0.3 kgf/m) is required per unit length. When an analysis is performed by a finite element method, using the value as the calculation condition, the cross-sectional shape of the frame, that is required for the deformation of a 55-inch sized mask frame (inside dimension is 1350 mm×820 mm) to be kept within a range of not more than 50 μm, is required to be a cross section of 125 mm×60 mm, and the weight is 280 kg. Namely, when the mask 200 has the above rigidity, the weight of the entire mask 200 is increased, and a mask, which is used for a substrate having a size of approximately 1300 mm×800 mm, has a weight of 300 kg.
The processing apparatus fixing the mask 200 and the object to be processed 300 includes the base 400 on which the mask 200 and the object to be processed 300 are placed. The base 400 includes the first fixing means 102 and the second fixing means 101. The second fixing means 101 firmly fixes the mask frame 200a of the mask 200 onto the surface of the base 400 on which the mask 200 will be placed. The first fixing means 102 fixes the mask membranous plane 200b onto the placement surface of the base 400. More specifically, the second and first fixing means 101 and 102 are mechanisms that can move a magnet, which is fixing force generation means, close to and away from the placement surface of the base 400, on which the mask 200 and the object to be processed 300 are placed, through a through-hole of the base 400. The processing apparatus further includes a moving mechanism that can move the base 900 so that the processing surface of the object to be processed 300 on the base 400 is directed upward or downward in a vertical direction, and, in addition, can move the base 400 in a direction vertical to the processing surface.
Next, the mask fixing operation in the processing apparatus of the present invention will be described.
In the processing apparatus shown in
a) shows the state where the position of the mask is aligned with the substrate which is the object to be processed 300. The object to be processed 300 is placed on the base 400 in such a state that the processing surface is directed upward, and the mask 200 is placed on the base 400 so as to cover the object to be processed 300 from above. The mask 200 is the large-sized mask for a substrate with a size of 1300 mm×800 mm and is fixed without creases or deflection of the mask membranous plane 200b. However, the mask membranous plane 200b is fixed at only its periphery to the mask frame 200a, and therefore, the mask membranous plane 200b is slightly extended under its own weight as shown in
In the present embodiment, in order to form a predetermined pattern with high accuracy on the object to be processed 300, the relative position between the mask 200 and the object to be processed 300 in
In the positional alignment between the mask 200 and the object to be processed 300, the mask 200 and/or the object to be processed 300 is moved by a positional alignment mechanism (not shown), whereby the mask 200 and the object to be processed 300 can be disposed at a predetermined position.
In the relative movement between the mask 200 and the object to be processed 300, if they are in contact with each other, the object to be processed 300 may be damaged. Therefore, as shown in
However, if the interval is large, the large interval causes the positional deviation when the mask membranous plane 200b and the object to be processed 300 are adhered and fixed to each other in the following procedure. Therefore, the interval is preferably as small as possible. Specifically, the upper limit of the interval is preferably not more than 50 μm.
In
In the present embodiment, the permanent magnet is used as the fixing force generation means for the mask frame 200a; however, mechanical fixing means for mechanical fixing using a clamp and an electromagnet may be used.
In
In
At that time, only the group 102a including fixing means corresponding to the central portion of the mask membranous plane 200b is independently operated, and the central portion of the mask membranous plane 200b is elastically deformed by the magnetic force, whereby the central portion of the object to be processed 300 and the central portion of the mask membranous plane 200b are in contact with each other.
The fixing means belonging to the group 102a controls the magnetic fixing force by driving a permanent magnet, which is the fixing force generation means, vertically to the mask placement surface of the base 400 by means of an external driving mechanism (not shown).
In the present embodiment, the permanent magnet is used as the fixing force generation means for the central portion of the mask membranous plane 200b; however, the fixing force generation means is not limited to the permanent magnet, and any means that can generate the fixing force can be used.
Since the central portion of the mask membranous plane 200b is first in contact with the object to be processed 300, a good adherence with the processing surface of the object to be processed 300 can be ensured without causing creases of the mask membranous plane and the positional deviation occurring when the entire mask membranous plane is fixed to the object to be processed.
In
When a magnet as the fixing force generation means is used in the fixing means belonging to the groups 102a and 102b, each magnet is disposed so that the magnetic fixing force that firmly fixes the mask membranous plane 200b to the processing surface of the object to be processed 300 is uniformly exercised. Specifically, the magnets are uniformly arranged in a plane facing the processing surface, whereby the magnetic fixing force can be uniformly exercised.
In the present embodiment, the external driving mechanism (not shown) drives the permanent magnet, which is the fixing force generation means, vertically to the mask placement surface, whereby the magnetic fixing force for the mask is controlled. However, also when the fixing means is constituted so that the fixing force for the mask membranous plane can be changed for each area in the mask membranous plane without providing the driving mechanism for the fixing force generation means, the mask fixing operation can be realized.
Thus, the method of controlling the fixing force is not limited to the driving system shown in
When the sequential operation shown in
The above constitution can realize the function of fixing the object to be processed 300 to the base 400 even if the object to be processed 300 is a non-magnetic body such as a glass substrate.
A glass substrate is widely used as a substrate for a flat panel display. For this purpose, in the prior art processing apparatus, an instrument such as an electrostatic chuck is provided on the base 400, whereby the function of fixing the glass substrate is ensured. On the other hand, according to the present invention, since the object to be processed 300 can be held and fixed by the force that fixes the mask membranous plane 200b toward the base 400 side, the object to be processed 300 which is a non-magnetic body can be fixed without using the electrostatic chuck, resulting in a significant contribution to the reduction of the apparatus cost.
The mask fixing procedure described with reference to
When the positional alignment and fixing of the object to be processed 300 and the mask 200 on the base 400 are completed as described above, the base 400 having the fixing means 101 and 102 is turned upside down by a moving mechanism (not shown) so that the processing surface is directed downward. The base 400 having the fixing means 101 and 102 is disposed above a deposition source in a vacuum chamber (not shown) while the processing surface is directed downward (faced down), and a film-formation material is formed in a desired pattern on the processing surface through the mask 200.
In the collection of the object to be processed 300, the base 400 is turned upside down by a moving mechanism (not shown). Subsequently, the mask 200 is transferred to a different place in the same deposition chamber or in a separate chamber in the processing apparatus by mask conveying means (not shown). Further, a conveyance system receives the object to be processed 300 from means for delivering an object to be processed (not shown), and the object to be processed 300 is carried to a predetermined position to be collected.
Although the present embodiment is an application example related to the vacuum deposition apparatus, the mask fixing method according to the present invention can be used in not only the film-formation method but also a sputtering method.
Next, a preferred embodiment of the present invention will be described.
In order to endure highly fine pattern accuracy even when an object to be processed is increased in size, two significantly different designs are required for the mask fixing means. One of the designs is to fix a mask significantly increased in weight, and another of that to ensure the adhesion between the mask and the object to be processed.
Thus, the fixing and releasing of the fixing of the mask frame accounting for the majority of the weight of the mask and the fixing and releasing of the fixing of the mask membranous plane requiring adherence with the object to be processed can be respectively performed by separate fixing means. According to this constitution, the mask positional alignment operation can be performed without adhering and fixing the mask membranous plane to the processing surface. Consequently, there can be realized such an operation that prevents the occurrence of a damage caused by the contact between the mask and the object to be processed and positional deviation caused by impact.
According to the above constitution, the film formation can be performed while maintaining such a state that the position of the mask is precisely aligned. Further, the positional alignment of the mask and the film formation can be performed without dividing the processing area into ranges capable of ensuring the accuracy, unlike the technique disclosed in Patent Document 4, whereby it is possible to realize highly accurate film formation processing that can correspond to the increase of the size of the object to be processed.
In the present invention, it is preferable that the mask frame is disposed so as to be prevented from being directly in contact with the object to be processed. According to this constitution, even when only the mask frame is fixed to the base after the positional alignment of the mask, an interval can be provided between the object to be processed and the mask, and consequently, there can be realized such an operation that prevents the occurrence of positional deviation caused by impact and contact damage. Therefore, the film formation can be preformed while maintaining such a state that the position of the mask is precisely aligned.
In the fixing means 101 for the mask frame, it is preferable that the fixing force generation means for the mask frame 200a exercises the fixing force, larger than gravity of the entire mask, in the vertical direction with respect to the mask placement surface of the base. When the processing surface of the object to be processed is tilted, it is preferable that the fixing force of the fixing force generation means for the mask frame is set so that the frictional force of the mask frame in a direction parallel to the mask placement surface is larger than a component of the gravity of the entire mask, that is parallel to the mask placement surface. The fixing force for the mask frame accounting for the majority of the weight of the mask is determined by considering not only the gravity of the entire mask but also the frictional force against the placement surface generated in the movement of the mask. According to this constitution, it is possible to maintain such a state that the position of the mask is precisely aligned even when the mask is put in the face down attitude in the film formation, and, at the same time, the movement of the mask and the accidental falling can be prevented.
In the fixing means 102 for the mask membranous plane, it is preferable that the fixing force generation means for the mask membranous plane exercises the fixing force, that is larger than the sum of the gravity of the mask membranous plane and the gravity of the object to be processed in contact with the mask membranous plane, in the vertical direction with respect to the base. Further, when the processing surface of the object to be processed is tilted, it is preferable that the fixing force of the fixing force generation means for the mask frame is set so that the following frictional force is exercised. Namely, the fixing force is set so that the frictional force between the base and the object to be processed is larger than a component of the sum of the gravity of the object to be processed and the gravity of the mask membranous plane, that is parallel to the base, and, at the same time, so that the frictional force between the object to be processed and the mask membranous plane is larger than a component of the gravity of the mask membranous plane, that is parallel to the processing surface of the object to be processed.
As described above, the fixing force for the mask membranous plane is determined by considering not only the gravity of the mask membranous plane and the object to be processed but also the frictional force between the mask membranous plane and the object to be processed generated in the movement of the mask. According to this constitution, when the object to be processed is moved to be put in the face down attitude in the film formation, the adhesion between the object to be processed and the mask and the resting state can be maintained. Thus, the positional deviation of the mask can be prevented, and the film formation can be performed while maintaining such a state that the position of the mask is precisely aligned. Further, even when the object to be processed is put in the face down attitude during deposition, the adhesion between the object to be processed and the mask can be maintained, and, at the same time, falling of the object to be processed can be prevented, whereby the film formation can be performed while maintaining such a state that the position of the mask is precisely aligned.
Furthermore, the object to be processed itself is fixed onto the base through the mask membranous plane, and therefore, it is possible to obtain, without using an electrostatic chuck, the same effects and functions as those in the case of using an electrostatic chuck in the mechanism that fixes the object to be processed. Consequently, it is possible to realize the cost reduction of the processing apparatus due to the simplification of the mask fixing means and the tact up of the apparatus due to the reduction in the time required for preparing to fix the mask, whereby a productive apparatus can be realized.
In the fixing means for the mask membranous plane, it is preferable that magnetism for fixing the mask membranous plane are arranged so that the magnetic force is uniformly distributed on the contact surface between the mask and the object to be processed. This constitution can enhance the adhesion between the object to be processed and the mask and bring the mask membranous plane into contact with the processing surface without causing positional deviation or creases. Thus, the film formation can be performed while maintaining a good adhesion state between the object to be processed and the mask.
While the positions of the mask and the object to be processed are aligned, it is preferable that the mask is fixed so that a constant minute interval is provided between the mask membranous plane and the processing surface of the object to be processed. According to this constitution, the planar movement for the mask positional alignment can be performed without causing contact between the mask and the object to be processed during the relative movement of the mask and the object to be processed. Consequently, the positional deviation between the mask and the object to be processed caused by impact and contact damage of the object to be processed can be prevented from occurring in the mask positional alignment.
In the fixing of the mask membranous plane, it is preferable that the fixing force is applied to the mask membranous plane so that the mask membranous plane is fixed from the central portion of the object to be processed toward the peripheral edge.
Although tension is applied to the mask membranous plane, the mask membranous plane is slightly extended by its own weight (see,
Thus, in the present invention, the mask membranous plane is brought into contact with the object to be processed in sequence from the central portion of the object to be processed toward the peripheral edge. Consequently, good adhesion can be ensured without causing creases of the mask and the positional deviation of the mask from the object to be processed.
Comparing with a method disclosed in Patent Document 6, in which the mask is adhered in sequence from one end of the object to be processed, the mask fixing procedure of the present invention can be easily extended to the case of increasing the sizes of the mask and the object to be processed.
The reason comes from the fact that the mask membranous plane can be adhered to the object to be processed, in a centrally symmetric manner, from the central portion of the object to be processed toward the peripheral edge, and therefore, if creases occur in the mask, the distance moved by the creases to the outside of the peripheral edge of the object to be processed is always the shortest. Namely, it is estimated that in the fixing of the mask, when the deviated mask cannot be deformed so as to follow the object to be processed, the deviation is remained, whereby creases occur in the mask. Even when creases occur, if the deformation is moved as it is to the end of the object to be processed, the creases are eliminated. However, the longer the distance from the location of the occurrence of creases to the peripheral edge of the object to be processed, the higher the possibility that deformation such as creases is left. Thus, in the prior art method of fixing the mask in sequence from one end of the object to be processed, the distance moved by the deformed portion of the mask, such as creases, to the outside of the peripheral edge of the object to be processed may be elongated in one direction. Namely, in the prior art method, when the sizes of the mask and the object to be processed are increased, it is difficult to maintain a good mask adhesion state free from creases and the like.
On the other hand, according to the mask fixing procedure of the present invention, since the distance that allows deformation such as creases to release can be minimized, the mask fixing procedure can be easily extended to the case of increasing the sizes of the mask and the object to be processed.
Further, the mask and the object to be processed can be easily adhered to each other in sequence from the center of the object to be processed to the peripheral edge by controlling the fixing force of the mask. There can be used a variety of methods which suit the properties of the apparatus, such as the movement of the permanent magnet close to and away from the mask membranous plane and the disposition of the permanent magnet that allows the fixing force to be changed in an area corresponding to the mask membranous plane, or ON/OFF control by means of an electromagnet.
In the mask fixing procedure after the position alignment between the mask and the object to be processed, it is preferable that the mask frame is first fixed, and the mask membranous plane is then fixed. In the procedure for fixing the mask membranous plane, it is preferable that the mask membranous plane is brought into contact with the object to be processed in sequence from the center of the object to be processed toward the peripheral edge.
In the present invention, since the fixing force required for the fixing means is proportional to the weight of a fixed object, the fixing force required for the mask frame is significantly larger than that for the mask membranous plane.
The mask frame requiring a larger fixing force is first fixed, and the mask membranous plane is then fixed, whereby the object to be processed can be fixed and held by only the elastic deformation of the mask membranous plane without causing the positional deviation of the mask.
According to the above constitution, the film formation can be performed without causing damage caused by the contact between the mask and the object to be processed and positional deviation caused by impact.
The operation procedure of the fixing means according to the present invention can be easily realized in an operation control sequence of the processing apparatus. The operation procedure is automated by a program, for example, whereby the operation can be eased, and the reliability of the apparatus can be further enhanced.
Hereinafter, an example of the application of the processing apparatus will be described.
First, an example in which the processing apparatus is used in an electron emission element display is shown.
The electron emission element display includes an electron source substrate 501, row lines 502, column lines 503, electron emission elements 504, a first getter 507, and a second getter 510.
The electron emission element display further includes a reinforcing plate 511, a frame 512, a glass substrate 513, a fluorescent film 514, a metal back 515, column selection terminals Dox1 to Doxm, and row selection terminals Doy1 to Doyn. The glass substrate 513, the fluorescent film 514, and the metal back 515 constitute a face plate 516.
In the electron emission element display, the electron emission element 504 is disposed at a position where the row line 502 and the column line 503 intersect with each other on a plane. When a predetermined voltage is applied to the selected row line 502 and the selected column line 503, electrons are emitted from the electron emission element 504 located at the position where the row line 502 and the column line 503 intersect with each other on a plane, and the electrons are accelerated toward the face plate 516 subjected to a positive high voltage. The electrons collide against the metal back 515 to excite the fluorescent film 514 in contact with the metal back 515, and thus the fluorescent film 514 emits light.
A space surrounded by the face plate 516, the frame 512, and the glass substrate 513 is maintained in vacuum. In order to maintain the space in a vacuum state over the life of the image display apparatus, a getter material is disposed in the space. As the getter material, there are an evaporating getter and a non-evaporating getter, and they are appropriately used. As the evaporating getter, there has been known a single metal such as Ba, Li, Al, Hf, Nb, Ta, Th, Mo, and V or alloy thereof. As the non-evaporating getter, there has been known a single metal such as Zr and Ti or alloy thereof. The evaporating getter and the non-evaporating getter are made of metal and are conductive materials.
In the example of
In the production of the first getter, since an electroconductive film, which will finally become the electron emission element 504, is already formed, it is crucial to produce the first getter without the first getter electrically conducting with the electroconductive film. The allowable error of the positional alignment at that time is approximately ±3 μm.
Meanwhile, it is considered that the image display apparatus is getting larger and larger and have higher definition, and consequently the allowable error of the positional alignment is getting smaller and smaller.
Thus, the processing apparatus of the present invention, which can realize the highly accurate positional alignment of a large and heavy mask, is suited particularly for use in the manufacturing of the electron emission element display.
Next, an example of the application of an organic light-emitting display (hereinafter referred to as “organic EL display”) is shown.
The organic light-emitting display includes a glass substrate 601, an anode 602, a layer 604 related to a hole, an emission layer 605, an electron transport layer 606, an electron injection layer 607, and a cathode 608. The layer 604 includes a hole injection layer 604a and a hole transport layer 604b.
In the operation of the organic EL display, when a voltage is applied to between the anode 602 and the cathode 608, holes are injected into the hole transport layer 604a from the anode 602. Meanwhile, electrons are injected into the electron injection layer 607 from the cathode 608. The injected holes move through the hole transport layer 604a and the hole transport layer 604b to reach the emission layer 605, and the injected electrons move through the electron injection layer 607 and the electron transport layer 606 to reach the emission layer 605. The holes and electrons having reached the emission layer 605 are recombined to emit light.
The material of the emission layer 605 is suitably selected, whereby red, green, and blue lights which are light's three primary colors can be emitted, and consequently a full-color image display apparatus can be realized.
Next, the production of the light-emitting part will be described with reference to
According to the above constitution, the element separating film 603 partitions between the adjacent light emitting portions R, G, and B. Then, the layer 604 (actually formed of the hole transport layer 604a and the hole transport layer 604b) related to a hole, the emission layer 605, the electron transport layer 606, and the electron injection layer 607 are produced sequentially on the anode electrode 602 by a deposition method. The cathode electrode 608 formed of a transparent electroconductive film is stacked on the electron injection layer 607, whereby a light emitting part of the organic EL display is formed on the substrate 601.
Finally, the light emitting part on the substrate is covered by a sealing layer (not shown) formed of a low permeable material.
When the R, G, and B emission layers 605 are produced by a deposition method, the green and blue light emitting portions G and B are covered by a mask 610 as shown in
Thus, the green and blue light emitting portions G and B are covered by the mask 610 so that the red light emitting material is prevented from being mixed in the green and blue light emitting portions G and B. The mask 610 is used in a similar manner for the green and blue light emitting portions G and B.
For example, in a full color organic EL display with a diagonal size of 5.2 inches and 320×240 pixels, the pixel pitch is 0.33 mm (330 μm), and the subpixel pitch is 0.11 mm (110 μm). In such a display, the alignment accuracy of a mask is required to be not more than several microns.
Also in the production of the hole transport layer 604b, the emission layer 605, the electron transport layer 606, and the electron injection layer 607, they are produced in different chambers in order to prevent the mixing of each organic material, and a dedicated mask is used for each layer.
Thus, also in the film-formation process for the above layers, each mask is required to be aligned at the same position with high accuracy.
Thus, highly accurate and rapid mask alignment is necessary for the improvement of the productivity and yield of the organic EL display.
It is considered that the demand for a display having a large display screen is increased more and more, whereby it is predicted that the demand for the highly accurate and rapid alignment of a heavy large mask is increased more and more.
Thus, the processing apparatus of the present invention, which can realize the highly accurate and rapid alignment of a heavy large mask is suited particularly for use in the manufacturing of the organic EL display.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2007-336693 | Dec 2007 | JP | national |
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/JP2008/073704 | 12/26/2008 | WO | 00 | 6/18/2010 |
