The present invention relates to integrated circuits using standard CMOS technology. More specifically, the present invention relates to a CMOS circuit for adjusting the frequency oscillation of a crystal oscillator.
Inverting amplifier 101, resistor 102 and crystal 103 are connected in parallel between terminals 151 and 152. Fixed load capacitors 110 and 120 are connected between terminals 151 and 152, respectively, and ground. The programmable load capacitors 111-114 can be selectively connected between terminal 151 and ground by activating switches 131-134, respectively. Similarly, the programmable load capacitors 121-124 can be selectively connected between terminal 152 and ground by activating switches 141-144, respectively. Switches 131, 132, 133 and 134 are controlled by control signals A1, A2, A3 and A4, respectively. Switches 141, 142, 143 and 144 are controlled by control signals B1, B2, B3 and B4, respectively.
The fixed load capacitors 110 and 120 have capacitances C10 and C20, respectively, wherein C10 is typically equal to C20. The programmable load capacitors 111, 112, 113 and 114 have capacitances of C11, C12, C13 and C14, respectively, and programmable load capacitors 121, 122, 123 and 124 have capacitances of C21, C22, C23 and C24, respectively. Capacitances C11, C12, C13 and C14 are typically equal to capacitances C21, C22, C23 and C24, respectively.
Crystal 103 can be modeled by an inductor 104 having an inductance LM, a capacitor 105 having a capacitance CM, a resistor 106 having a resistance RS, and a capacitor 107 having a capacitance C0. Inductor 104, capacitor 105 and resistor 106 are connected in series between terminals 151 and 152. Capacitor 107 is connected between terminals 151 and 152, in parallel with the series-connected inductor 104, capacitor 105 and resistor 106.
The series resonant frequency (fs) of crystal 103 is determined by the inductance LM of inductor 104 and the capacitance CM of capacitor 105. The series resonant frequency (fs) of crystal 103 is specified by the following equation.
The parallel resonant frequency of oscillation (fp) of crystal oscillator circuit 100 can be represented by the following equation, wherein CL is the capacitance introduced by load capacitors 110-114 and 120-124.
If only fixed load capacitors 110 and 120 are connected to terminals 151 and 152 (i.e., switches 131-134 and 141-144 are all open), the load capacitance CL can be represented by the following equation.
C
L=(C10*C20)/(C10+C20) equation (3)
The load capacitance CL can be adjusted by selectively activating the switches 131-134 and 141-144. In general, the load capacitance CL increases as additional switches are activated (i.e., as additional capacitors are connected to terminals 151 and 152). Increasing the load capacitance CL causes the parallel resonant frequency of oscillation fp to be reduced, as indicated by equation (2).
Although crystal oscillator circuit 100 allows the parallel resonant frequency of oscillation fp to be adjusted, the programmable load capacitors 111-114 and 121-124 require a relatively large layout area on an integrated circuit chip. It would therefore be desirable to have an improved crystal oscillator circuit, which is capable of parallel resonant frequency adjustment, but does not require an excessive layout area.
Accordingly, the present invention provides a crystal oscillator circuit having a parallel resonant frequency that is adjustable by switching trim capacitors in parallel with a crystal.
The present invention will be more fully understood in view of the following description and drawings.
In one embodiment, more than one of the capacitor trim signals can be simultaneously activated to the second logic state, such that more than one of the trim capacitors can be simultaneously connected between terminals 151 and 152. In an alternate embodiment, the four capacitor trim signals CAP_TRIM[1:4] are generated by decoding a 2-bit control signal provided on a pair of pins of an integrated circuit chip. In this embodiment, only one of the capacitor trim signals CAP_TRIM[1:4] can be activated at any given time. Although the illustrated embodiments only implement four trim capacitors and the associated switch pairs, it is understood that other numbers of trim capacitors/switch pairs can be used in other embodiments. Trim capacitors 201, 202, 203 and 204 have capacitances C1, C2, C3 and C4, respectively. In one embodiment, capacitances C1-C4 are binary weighted, thereby enabling trimming from a minimum frequency to a maximum frequency with a predefined step. In alternate embodiments, capacitances C1-C4 can have other weightings.
The parallel resonant frequency of oscillation (fp) of crystal oscillator circuit 200 can be represented by equation (4) below, wherein CL is the capacitance introduced by load capacitors 110 and 120, and CP is the capacitance of the trim capacitor(s) connected between terminals 151 and 152.
Note that connecting a trim capacitor in parallel with crystal 103 effectively adds the capacitance of the trim capacitor to the capacitance C0 of the crystal 103. The trim capacitance CP can be adjusted by selectively activating the switches 221-228. In general, the trim capacitance CP increases as additional switches are activated (i.e., as additional capacitors are connected to terminals 151 and 152), or as larger trim capacitors are connected between terminals 151 and 152. Increasing the trim capacitance CP causes the parallel resonant frequency of oscillation fp to be reduced, as indicated by equation (4).
In order for the trim capacitors 201-204 of crystal oscillator circuit 200 to produces the same frequency adjustments as the programmable load capacitors 121-124 and 121-124 of crystal oscillator circuit 100, the capacitances C1-C4 of trim capacitors 201-204 should have the following relationships with respect to the capacitances C11-C14 and C21-C24 of programmable load capacitors.
C1=(C11*C21)/(C11+C21) equation (5)
C2=(C12*C22)/(C12+C22) equation (6)
C3=(C13*C23)/(C13+C23) equation (7)
C4=(C14*C24)/(C14+C24) equation (8)
In general, a trim capacitor of the present invention can replace two programmable load capacitors, wherein the trim capacitor is half the size of either of the two programmable load capacitors. For example, suppose that programmable load capacitors 111 and 121 of crystal oscillator circuit 100 (
Although the present invention has been described in connection with particular embodiments, it is understood that variations in these embodiments would be apparent to one of ordinary skill in the art. Thus, the present invention is only limited by the following claims.