Claims
- 1. A protected faceplate structure of a field emission display device, said protected faceplate structure comprising:a) a faceplate of a field emission display device, said faceplate adapted to have phosphor containing areas disposed above one side thereof; and b) a barrier layer comprised of an oxide of the lanthanide series, said barrier layer disposed over said one side of said faceplate, said barrier layer adapted to prevent degradation of said faceplate due to electron bombardment by electrons directed towards said phosphor containing areas, wherein said barrier layer is comprised of a substantially transparent, electron-damage resistant material and includes a selectively light absorbing component.
- 2. The protected faceplate structure of a field emission display device of claim 1, wherein said faceplate is comprised of a high-sodium glass substrate.
- 3. The protected faceplate structure of a field emission display device of claim 2, wherein said barrier layer prevents the migration of sodium from said faceplate into said field emission display device.
- 4. The protected faceplate structure of a field emission display device of claim 1, wherein said barrier layer has a thickness sufficient to prevent substantial penetration of said electrons through said barrier layer such that said electrons do not impinge said faceplate.
- 5. The protected faceplate structure of a field emission display device of claim 1, wherein said barrier layer is selected from the group consisting of: Y2O3, La2O3, CeO2, Pr4O11, Nd2O3, Pm2O3, Sm2O3, EuO2, Gd2O3, TbO2, Dy2O3, Ho2O3, Er2O3, Tm2O3, Yb2O3, Yb2O3 and Lu2O3, and their mixtures.
- 6. The protected faceplate structure of a field emission display device of claim 5, wherein said barrier layer has a thickness of approximately 25 nanometers.
- 7. The protected faceplate structure of a field emission display device of claim 1, wherein said barrier layer prevents the migration of contaminants from said faceplate into said field emission display device.
- 8. The protected faceplate structure of a field emission display device of claim 1, wherein said barrier layer is electrically conductive.
- 9. The protected faceplate structure of a field emission display device of claim 1, wherein said selectively light absorbing component is selected from the group consisting of dyes and pigments.
- 10. The protected faceplate structure of a field emission display device of claim 1, wherein each subpixel of said faceplate includes a different selectively light absorbing component.
- 11. The protected faceplate structure of a field emission display device of claim 1, wherein said barrier layer is selected from the group consisting of: high density oxides, nitride, Gd2O3, Yb2O3, HfO2, GdNx, HfNx, and their mixtures.
- 12. The protected faceplate structure of a field emission display device of claim 11, wherein said barrier layer has a thickness of approximately 25 nanometers.
- 13. A protected cathode substrate structure of a field emission display device, said protected cathode substrate structure comprising:a) a cathode substrate of a field emission display device, said cathode substrate adapted to have an electron emitting structure disposed above one side thereof; and b) a barrier layer comprised of an oxide of the lanthanide series disposed over said one side of said cathode substrate, said barrier layer adapted to prevent degradation of said cathode substrate due to electron bombardment by electrons originating from said electron emitting structure, wherein said barrier layer is comprised of a substantially transparent, electron-damage resistant material and is electrically conductive.
- 14. The protected cathode substrate structure of a field emission display device of claim 13, wherein said cathode substrate is comprised of a high-sodium glass.
- 15. The protected cathode substrate structure of a field emission display device of claim 14, wherein said barrier layer prevents the migration of sodium from said cathode substrate into said field emission display device.
- 16. The protected cathode substrate structure of a field emission display device of claim 13, wherein said barrier layer has a thickness sufficient to prevent substantial penetration of said electrons through said barrier layer such that said electrons do not impinge said cathode substrate.
- 17. The protected cathode substrate structure of a field emission display device of claim 13, wherein said barrier layer is comprised of: Y2O3, La2O3, CeO2, Pr4O11, Nd2O3, Pm2O3, Sm2O3, EuO2, Gd2O3, TbO2, Dy2O3, Ho2O3, Er2O3, Tm2O3, Yb2O3, Yb2O3 and Lu2O3, and their mixtures.
- 18. The protected cathode substrate structure of a field emission display device of claim 17, wherein said barrier layer has a thickness of approximately 25 nanometers.
- 19. The protected cathode substrate structure of a field emission display device of claim 13, wherein said barrier layer prevents the migration of contaminants from said cathode substrate into said field emission display device.
- 20. The protected cathode substrate structure of a field emission display device of claim 13, wherein said barrier layer is comprised of: high density oxides, nitride, Gd2O3, Yb2O3, HfO2, GdNx, HfNx, and their mixtures.
- 21. The protected cathode substrate structure of a field emission display device of claim 20, wherein said barrier layer has a thickness of approximately 25 nanometers.
CROSS REFERENCE TO RELATED APPLICATION
This Application is a Continuation-in-Part of co-pending, commonly-owned U.S. patent application Ser. No. 09/627,355, filed Jul. 28, 2000, by Haven et al., and entitled “PROTECTED SUBSTRATE STRUCTURE FOR A FIELD EMISSION DISPLAY DEVICE” which is a Continuation-in-Part of Ser. No. 09/087,785 filed May 29, 1998, now U.S. Pat. No. 6,215,241 issued Apr. 10, 2001 to Learn et al., and entitled “FLAT PANEL DISPLAY WITH ENCAPSULATED MATRIX STRUCTURE”.
US Referenced Citations (5)
Number |
Name |
Date |
Kind |
5270615 |
Chang |
Dec 1993 |
A |
5811919 |
Hoogsteen et al. |
Sep 1998 |
A |
5909081 |
Eida et al. |
Jun 1999 |
A |
6037712 |
Codama et al. |
Mar 2000 |
A |
6144155 |
Yoshikawa et al. |
Nov 2000 |
A |
Continuation in Parts (2)
|
Number |
Date |
Country |
Parent |
09/627355 |
Jul 2000 |
US |
Child |
09/895699 |
|
US |
Parent |
09/087785 |
May 1998 |
US |
Child |
09/627355 |
|
US |