Protection circuit

Information

  • Patent Grant
  • 6639444
  • Patent Number
    6,639,444
  • Date Filed
    Friday, July 26, 2002
    22 years ago
  • Date Issued
    Tuesday, October 28, 2003
    21 years ago
Abstract
A protection circuit 10 has a diode 31 being connected in parallel to an inductive load 11 and having a forward direction set reverse to the conduction direction of a power supply current and a Zener diode 33 being placed between one terminal of the diode 31 and one terminal of the load 11 corresponding to the terminal of the diode and having a forward direction matched with the conduction direction of the power supply current.
Description




BACKGROUND OF THE INVENTION




This invention relates to a protection circuit for protecting a transistor, etc., for controlling the conduction state of an electric current to an inductive load and in particular to a protection circuit applied to power supply control in various vehicle-installed power supply distribution sections.





FIG. 2

is a circuit diagram of a protection circuit in a related art and a circuit configuration incorporating the protection circuit. In this kind of protection circuit, a diode


3


is connected in parallel with an inductive load (for example, a motor)


1


as a measure against surge voltage occurring when the load


1


is powered off, as shown in FIG.


2


. In the figure, numeral


5


denotes a MOSFET (transistor) for controlling the energization state of the load


1


and numeral


7


denotes a drive circuit for driving the MOSFET


5


. Power supply current supplied from a power supply line


9


is supplied via the MOSFET


5


to the load


1


.




However, in the protection circuit in the related art, if the circuit configuration shown in

FIG. 2

is connected to the power supply line


9


in incorrect polarity by mistake, the power supply current from the power supply line


9


(reverse current) flows into the MOSFET


5


via the diode


3


rather than via the load


1


as on a route A shown in FIG.


2


and there is a fear of breaking the MOSFET


5


.




SUMMARY OF THE INVENTION




It is therefore an object of the invention to provide a protection circuit capable of preventing an overcurrent from flowing into a transistor if a circuit configuration incorporating the invention is connected to a power supply in incorrect polarity by mistake while taking a measure against surge voltage occurring when a load in the circuit configuration is powered off.




To the end, according to the invention, there is provided a protection circuit being provided for a circuit configuration comprising an inductive load and a transistor for controlling the energization state of the load, the protection circuit comprising a diode being connected in parallel to the load and having a forward direction set reverse to the conduction direction of a power supply current to the load; and a Zener diode being placed in a conducting path between one terminal of the diode and one terminal of the load corresponding to the terminal of the diode and having a forward direction matched with the conduction direction of the power supply current.




Preferably, the transistor may be placed upstream in the conduction direction of the power supply current relative to the load.











BRIEF DESCRIPTION OF THE DRAWINGS




In the accompanying drawings:





FIG. 1

is a circuit diagram of a protection circuit according to one embodiment of the invention and a circuit configuration incorporating the protection circuit; and





FIG. 2

is a circuit diagram of a protection circuit in a related art and a circuit configuration incorporating the protection circuit.











DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS





FIG. 1

is a circuit diagram of a protection circuit according to one embodiment of the invention and a circuit configuration incorporating the protection circuit. The circuit configuration incorporating the protection circuit


10


comprises an inductive load (for example, a motor)


11


, an n-channel MOSFET (transistor)


13


for controlling the energization state of the load


11


, and a drive circuit


15


for driving the MOSFET


13


. The load


11


and the MOSFET


13


are placed in series to an energization path


17


so that the MOSFET


13


is placed upstream in the conduction direction of a power supply current. The energization path


17


is placed between a power supply line


19


and a ground. A resistor


21


is placed between the drive circuit


15


and a gate of the MOSFET


13


. A diode


23


is connected to the energization path


17


so as to become parallel with the MOSFET


13


. The diode


23


is connected so that the forward direction of the diode


23


becomes reverse to the conduction direction of the power supply current supplied from the power supply line


19


to the energization path


17


.




The protection circuit


10


according to the embodiment comprises a diode


31


and a Zener diode


33


. The diode


31


and the Zener diode


33


are placed in series to a conducting path


35


connected to the energization path


17


so as to become parallel with the load


11


. The diode


31


is connected so that the forward direction of the diode


31


becomes reverse to the conduction direction of the power supply current. The Zener diode


33


is connected so that the forward direction of the Zener diode


33


matches the conduction direction of the power supply current. The inverse breakdown voltage of the Zener diode


33


is set to a higher value than the voltage applied via the power supply line


19


by a predetermined level.




According to the configuration of the protection circuit


10


, when the circuit configuration (energization path


17


) is connected to the power supply line


19


in the proper direction as shown in

FIG. 1

, if surge voltage exceeding the inverse breakdown voltage of the Zener diode


33


is generated by the load


11


when the load


11


is powered off, a conduction state is entered between the terminals of the load


11


through the Zener diode


33


and the diode


31


and the surge voltage can be prevented from flowing into the MOSFET


13


.




If the circuit configuration is connected to the power supply line


19


in incorrect polarity by mistake, the Zener diode


33


can keep the reverse power supply current from the power supply line


19


from flowing into the MOSFET


13


through the diode


31


and can prevent an overcurrent from flowing into the MOSFET


13


.




According to the invention as in aspects


1


and


2


, if the circuit configuration incorporating the invention is connected to the power supply in the proper direction, a measure against surge voltage occurring when the load is powered off is taken and the circuit configuration is connected to the power supply in incorrect polarity by mistake, the reverse power supply current can be kept from flowing into the transistor through the diode connected in parallel to the load and an overcurrent can be prevented from flowing into the transistor.



Claims
  • 1. A protection circuit provided for a circuit configuration including an inductive load and an FET type transistor for controlling in the energization state of said load,said protection circuit comprising: a diode being connected in parallel to said load, and having a forward direction set reverse to a conduction direction of a power supply current to said load; and a Zener diode having a breakdown voltage greater than a power supply voltage being placed in a conducting path between one terminal of said diode and one terminal of said load corresponding to said terminal of said diode, and having a forward direction matched with the conduction direction of the power supply current.
  • 2. The protection circuit as claimed in claim 1, whereinsaid transistor is placed upstream in the conduction direction of the power supply current relative to said load.
Priority Claims (1)
Number Date Country Kind
2001-226081 Jul 2001 JP
US Referenced Citations (6)
Number Name Date Kind
4455585 Murari et al. Jun 1984 A
4705322 Yiannoulos Nov 1987 A
4916378 Marchio' et al. Apr 1990 A
5010439 Zisa et al. Apr 1991 A
5894395 Baurand et al. Apr 1999 A
6031702 Williams Feb 2000 A
Foreign Referenced Citations (5)
Number Date Country
352238 Jan 1990 EP
57-71109 May 1982 JP
10-136564 May 1988 JP
1-261919 Oct 1989 JP
6-61824 Mar 1994 JP