The present application relates to a protection device, and more specifically, to a fast-acting protection device exhibiting a wide range in operating current.
Fuses containing low melting point metals, such as, lead, tin or antimony, are well-known protection devices to cut off currents. To prevent over-current and over-voltage, various protection devices are continuously developed. For example, a device containing a substrate on which a heating layer and a low melting point metal layer are stacked in sequence. The heating layer heats up in the event of over-voltage, and then the heat is transferred upwards to the low melting point metal layer. As a result, the low melting point metal layer is melted and blown to sever currents flowing therethrough, so as to protect circuits or electronic apparatuses.
Recently, mobile apparatuses such as cellular phones and laptop computers are widely used, and people increasingly rely on such products over time. However, burnout or explosion of batteries of cellular phones or portable products during charging or discharging is often seen. Therefore, the manufacturers continuously improve the designs of over-current and over-voltage protection devices to prevent the batteries from being blown due to over-current or over-voltage during charging or discharging.
In a known protection device, a fuse containing a low melting point metal layer is in series connection to a power line of a battery, and the low melting point metal layer and a heating layer are electrically coupled to a switch and an integrated circuit (IC) device. When the IC device detects an over-voltage event, the IC device enables the switch to “on”. As a result, current flows through the heating layer to generate heat to melt and blow the low melting point metal layer, so as to sever the power line to the battery for over-voltage protection. Moreover, it can be easily understood that the fuse itself can be heated and blown by a large amount of current in the event of over-current, and therefore over-current protection can also be achieved.
However, miniaturization is the current trend for electronic apparatuses, indicating that the electronic apparatuses equipped with protection devices will also become smaller in size in the future. It is understood that the interior components in the electronic apparatuses become more sensitive to any changes in temperature, current, and voltage as the size of electronic apparatuses decreases. The damage caused by high temperature, current surge, or voltage surge is easily magnified, and the overall performance of electronic apparatuses is more significantly compromised as such damage persists over time. In light of this, the blowing efficiency of protective devices needs to be improved. Additionally, there is a wide variety of electronic apparatuses, each with its corresponding operating current, therefore widening the protection range in current under the same structural design is also one of the most important issues.
Accordingly, there is a need to improve the blowing efficiency and operating current range of a protection device.
The present invention provides a protection device for over-voltage, over-current, and/or over-temperature protection. The major components of the protection device include a meltable conductor, an electrode set electrically connected to the meltable conductor, and a heating element disposed below the meltable conductor. The meltable conductor includes a low melting point bottom covering layer that covers the bottom of its core metal layer, thereby accelerating the blowing action of the protection device. Besides the acceleration of the blowing action, the present invention adjusts the thickness of at least three layers within the core metal layer and further enables the protection device to exhibit various operating currents. In this way, with the structural design of the protection device unchanged, not only is the blowing action improved, but the protection range in current is also expanded.
In accordance with an aspect of the present invention, a protection device includes a meltable conductor, an electrode set, and a heating element. The meltable conductor has a core metal layer and a bottom covering layer with low melting point. The core metal layer has a first low melting point metal layer, a second low melting point layer, and a high melting point metal layer laminated between the first low melting point metal layer and the second low melting point layer. A melting point of the high melting point metal layer is higher than a melting point of the first low melting point metal layer and a melting point of the second low melting point layer, and a thickness of the second low melting point layer is different from a thickness of the first low melting point metal layer. The bottom covering layer is disposed on a bottom surface of the core metal layer. The electrode set has a first electrode and a second electrode respectively connected to two terminals of the meltable conductor. The heating element is disposed below the bottom covering layer, by which the meltable conductor is heated up and blown by the heating element during an over-voltage event.
In an embodiment, a thickness of the bottom covering layer ranges from 0.01 mm to 1 mm.
In an embodiment, a ratio of the thickness of the first low melting point metal layer to a thickness of the high melting point metal layer to the thickness of the second low melting point layer is x:y:z. x ranges from 1 to 3. y ranges from 1 to 6. z ranges from 2 to 25. In addition, the ratio of x:y:z does not include 1:1:25.
In an embodiment, the thickness of the second low melting point layer is greater than the thickness of the first low melting point metal layer, and is greater than the thickness of the high melting point metal layer.
In an embodiment, the electrode set further includes an auxiliary electrode disposed below the bottom covering layer and between the first electrode and the second electrode.
In an embodiment, the present invention further includes an insulating layer disposed between the heating element and the auxiliary electrode. The electrode set is disposed on a substrate, and the insulating layer covers the heating element and attaches to the substrate.
In an embodiment, the bottom covering layer has a thin region located between the first electrode and the auxiliary electrode, and between the second electrode and the auxiliary electrode. The thin region becomes thinner in a direction away from the first electrode and the auxiliary electrode, and in a direction away from the second electrode and the auxiliary electrode.
In an embodiment, if a top-view area of the core metal layer is calculated as 100%, a top-view area of the bottom covering layer ranges from 30% to 90%.
In an embodiment, if the top-view area of the core metal layer is calculated as 100%, the top-view area of the bottom covering layer ranges from 60% to 90%.
In an embodiment, the bottom covering layer includes tin-silver alloy, tin-silver-copper alloy, tin-antimony alloy, tin-lead-silver alloy, tin-bismuth-silver alloy, or tin-lead-bismuth alloy, or combinations thereof.
In an embodiment, the bottom covering layer does not include gold.
In accordance with an aspect of the present invention, a protection device includes a meltable conductor, an electrode set, and a heating element. The meltable conductor has a core metal layer and a bottom covering layer with low melting point. The core metal layer consists of a low melting point metal layer and a high melting point metal layer. The low melting point metal layer covers a top surface and a bottom surface of the high melting point metal layer, and a melting point of the low melting point metal layer is lower than a melting point of the high melting point metal layer. The bottom covering layer is disposed on a bottom surface of the core metal layer. The electrode set has a first electrode and a second electrode respectively connected to two terminals of the meltable conductor. The heating element is disposed below the bottom covering layer, by which the meltable conductor is heated up and blown by the heating element in during an over-voltage event.
In an embodiment, a thickness of the bottom covering layer ranges from 0.01 mm to 1 mm.
In an embodiment, a ratio of a thickness of the low melting point metal layer to a thickness of the high melting point metal layer is x:y. x ranges from 1 to 3. y ranges from 1 to 10. The ratio of x:y does not include 1:10.
In an embodiment, the bottom covering layer includes tin-silver alloy, tin-silver-copper alloy, tin-antimony alloy, tin-lead-silver alloy, tin-bismuth-silver alloy, or tin-lead-bismuth alloy, or combinations thereof.
In an embodiment, the bottom covering layer does not include gold.
In an embodiment, the present invention further includes a substrate and an insulating layer, and the electrode set further includes an auxiliary electrode. The electrode set is disposed on the substrate. The auxiliary electrode is disposed below the bottom covering layer, and between the first electrode and the second electrode. The insulating layer is disposed between the heating element and the auxiliary electrode, wherein the insulating layer covers the heating element and attaches to the substrate.
In accordance with an aspect of the present invention, a protection device includes a meltable conductor, an electrode set, and a heating element. The meltable conductor has a core metal layer and a bottom covering layer with low melting point. The core metal layer consists of a low melting point metal layer and a high melting point metal layer. The high melting point metal layer covers a top surface and a bottom surface of the low melting point metal layer, and a melting point of the low melting point metal layer is lower than a melting point of the high melting point metal layer. The bottom covering layer is disposed on a bottom surface of the core metal layer. The electrode set has a first electrode and a second electrode respectively connected to two terminals of the meltable conductor. The heating element is disposed below the bottom covering layer, by which the meltable conductor is heated up and blown by the heating element during an over-voltage event.
In an embodiment, a thickness of the bottom covering layer ranges from 0.01 mm to 1 mm.
In an embodiment, a ratio of a thickness of the low melting point metal layer to a thickness of the high melting point metal layer is x:y. x ranges from 1 to 25. y ranges from 1 to 3. The ratio of x:y does not include 25:1.
In an embodiment, the bottom covering layer includes tin-silver alloy, tin-silver-copper alloy, tin-antimony alloy, tin-lead-silver alloy, tin-bismuth-silver alloy, or tin-lead-bismuth alloy, or combinations thereof.
In an embodiment, the bottom covering layer does not include gold.
In an embodiment, the present invention further includes a substrate and an insulating layer, and the electrode set further includes an auxiliary electrode. The electrode set is disposed on the substrate. The auxiliary electrode is disposed below the bottom covering layer, and between the first electrode and the second electrode. The insulating layer is disposed between the heating element and the auxiliary electrode, wherein the insulating layer covers the heating element and attaches to the substrate.
The present application will be described according to the appended drawings in which:
The making and using of the presently preferred illustrative embodiments are discussed in detail below. It should be appreciated, however, that the present application provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific illustrative embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the invention.
Please refer to
It is noted that the bottom covering layer 15a is additionally disposed below the core metal layer of the present invention. More specifically, the bottom covering layer 15a covers the first low melting point metal layer 15b of the core metal layer. The bottom covering layer 15a includes tin-silver (Sn—Ag) alloy, tin-silver-copper (Sn—Ag—Cu) alloy, tin-antimony (Sn—Sb) alloy, tin-lead-silver (Sn—Pb—Ag) alloy, tin-bismuth-silver (Sn—Bi—Ag) alloy, or tin-lead-bismuth (Sn—Pb—Bi) alloy, or any combinations thereof, but excludes gold (Au). A melting point of the bottom covering layer 15a is lower than that of the first low melting point metal layer 15b, and a eutectic alloy can be formed between them under high temperature. The eutectic alloy has a melting point lower than that of the first low melting point metal layer 15b, thereby accelerating the blowing action of the meltable conductor 15. However, the present invention observes that not all arbitrary sizes or structural designs of the bottom covering layer 15a exhibit excellent performance. With the presence of at least five metal layers (i.e., the core metal layer) in the meltable conductor 15, any slight change in the thickness, covering area, or structural design of the bottom covering layer 15a could significantly affect the performance of the protection device 10. In the present invention, the thickness of the core metal layer of the meltable conductor 15 ranges from 0.01 mm to 0.3 mm, and the thickness of the bottom covering layer 15a should be controlled within the range of 0.01 mm to 1 mm, preferably 0.1 mm to 0.3 mm. In an embodiment, the thickness of the bottom covering layer 15a is 0.01 mm, 0.05 mm, 0.1 mm, 0.15 mm, 0.2 mm, 0.25 mm, 0.3 mm, 0.35 mm, 0.4 mm, 0.45 mm, 0.5 mm, 0.55 mm, 0.6 mm, 0.65 mm, 0.7 mm, 0.75 mm, 0.8 mm, 0.85 mm, 0.9 mm, 0.95 mm, or 1 mm. This variation allows the addition of the bottom covering layer 15a to accelerate the blowing action of the meltable conductor 15. At an applied power of 6 watts (W), the blowout time of the protection device 10 can be reduced to 3 seconds from 7 seconds. At an applied power of 35 W, the blowout time of the protection device 10 can be reduced to 0.09 seconds from 0.1 seconds. Moreover, within the previously mentioned thickness range of the bottom covering layer 15a, the present invention further adjusts the thickness of each layer in the core metal layer, thereby modifying the operating current (i.e., blowout current) of the meltable conductor 15. More specifically, a ratio of the thickness of the first low melting point metal layer 15b to the thickness of the high melting point metal layer 15c to the thickness of the second low melting point layer 15d is x:y:z. x ranges from 1 to 3. y ranges from 1 to 6. z ranges from 2 to 25. For example, the thickness of the first low melting point metal layer 15b may be 6 micrometers (μm), the thickness of the high melting point metal layer 15c may be 18 μm, and the thickness of the second low melting point layer 15d may be 150 μm, resulting in a thickness ratio of 1:3:25. In another embodiment, the thickness of the first low melting point metal layer 15b is greater than that of the second low melting point layer 15d. The thickness of the first low melting point metal layer 15b may be 18 μm, the thickness of the high melting point metal layer 15c may be 6 μm, and the thickness of the second low melting point layer 15d may be 12 μm, resulting in a thickness ratio of 3:1:2. Nevertheless, the operating current of the meltable conductor 15 can be expanded, ranging from 78 amperes (A) to 100 A, as long as x, y, and, z are controlled according to the aforementioned ratio. It is noted that the ratio of x:y:z does not include 1:1:25. If the second low melting point layer 15d is too thick, the meltable conductor 15 cannot be assembled on the substrate 11. The assembly of the meltable conductor 15 on the substrate 11 is achieved through a welding process (e.g., reflow welding). With excessive thickness, the second low melting point layer 15d would melt excessively under the high temperature of the welding process, leading to a severe eutectic effect that causes the blowout of the meltable conductor 15.
Regarding the electrode set, the first electrode 12a and the second electrode 12b are respectively connected to two terminals of the meltable conductor 15 in the cross-sectional view. The auxiliary electrode 12e is disposed below the center of the meltable conductor 15, and is located between the first electrode 12a and the second electrode 12b. More specifically, the bottom surface of the core metal layer is covered with the bottom covering layer 15a, and the bottom covering layer 15a physically contacts the first electrode 12a, the second electrode 12b, and the auxiliary electrode 12e. The first electrode 12a is electrically connected to the input terminal, and the second electrode 12b is electrically connected to the output terminal of the power supply. When the current or temperature becomes excessively large or high, the meltable conductor 15 is heated up and blown. In addition, the heating element 13 is disposed below the bottom covering layer 15a, thereby actively heating up and blowing the meltable conductor 15 in the over-voltage event. The auxiliary electrode 12e is positioned directly above the heating element 13, facilitating the transfer of heat generated by the heating element 13. In addition, a portion of the meltable conductor 15 forms molten metal as it is blown, and the auxiliary electrode 12e can serve as a platform for the adsorption and collection of the molten metal, preventing incomplete blowout. It is noted that the insulating layer 14 is disposed between the heating element 13 and the auxiliary electrode 12e. In the cross-sectional view, the insulating layer 14 entirely covers the heating element 13 and extends further to attach to the substrate 11, and is substantially disposed below the center of the bottom covering layer 15a. The bottom covering layer 15a is not in physical contact with the insulating layer 14, and hence there is a gap between the bottom covering layer 15a and the insulating layer 14. The insulating layer 14 exhibits better thermal conductivity than ambient air. Consequently, the heat generated by the heating element 13 can be more concentrated and directly transferred upwards to the bottom covering layer 15a, accelerating the blowing action.
Please refer to
The design of the thin region T can be varied. Please refer to
Please refer to
In order to describe the present invention more clearly, the following verification is shown.
As shown in Table 1, the test group E1 represents embodiment E1 of the present invention, and the test group C1 represents comparative example C1. The embodiment E1 adopts the protection device 10 in
In light of the preliminary effectiveness of the above improvement, subsequent tests (data shown in Tables 2 to 4) further isolate the meltable conductor 15 from the protection device 10 of the present invention. Over-current is directly applied to this meltable conductor 15 and its melting characteristics are investigated.
In Table 2, the test groups E2 and C2 represent embodiment E2 of the present invention and comparative example C2, respectively. Both the embodiment E2 and comparative example C2 adopt the protection device 10 in
In addition, the thicknesses of the first low melting point metal layer 15b, the high melting point metal layer 15c, and the second low melting point layer 15d can be expressed in ratio based on the results of Table 2. The thickness of the first low melting point metal layer 15b is defined as x; the thickness of the high melting point metal layer 15c is defined as y; and the thickness of the second low melting point layer 15d is defined as z. According to the embodiment E2, x:y:z may be 1:3:25, 1:4:25, 1:6:25, 2:1:9 or 3:1:2. The aforementioned thickness ratios can be applied to the protection devices with different sizes while achieving the same or similar technical effect. In one embodiment, the thickness of the first low melting point metal layer 15b ranges from 5 μm to 21 μm; the thickness of the high melting point metal layer 15c ranges from 5 μm to 42 μm; and the thickness of the second low melting point layer 15d ranges from 10 μm to 175 μm. From the above, under the circumstance that the thickness of the bottom covering layer 15a is 0.26 mm, the adjustment of the thickness ratio within the core metal layer allows the meltable conductor 15 to be used in various electronic apparatuses with different rated currents. Considering the measurement error and the permissible error tolerance, the thickness of the bottom covering layer 15a may vary within the range of 0.01 mm to 1 mm while still achieving the same or similar technical effect.
Besides the expanded range of the blowout current, the present invention also adjusts the covering area of the bottom covering layer 15a. This adjustment ensures that the blowout time of the meltable conductor 15 complies with UL (Underwriters Laboratories) standard, which requires blowout in two minutes. Details are provided in Table 3.
In Table 3, the test groups E3 to E7 and test groups C3 to C5 represent embodiments E3 to E7 of the present invention and comparative examples C3 to C5, respectively. The embodiments E3 to E7 and comparative examples C3 to C5 adopt the protection device 10 in
In the embodiments E3 to E7, the covering ratio of the bottom covering layer 15a ranges from 39.2% to 78.4%. In these cases, the meltable conductor 15 is blown in two minutes, with the blowout current ranging from 65 A to 87 A. Concentrating the bottom covering layer 15a on the electrodes 12a, 12b, and 12e accelerates the blowing action and efficiently manages the distribution of the bottom covering layer 15a, saving unnecessary usage. However, it is noted that there are adverse effects if the covering ratio is too high or too low. If the covering ratio exceeds 90.2% (i.e., the comparative examples C3 and C4), an excessive amount of the bottom covering layer 15a is melted during heating. The excessive amount of the molten portion of bottom covering layer 15a would be adsorbed on the entire top surfaces of the first electrode 12a, the second electrode 12b, and the auxiliary electrode 12e. This increases the risk of reconnection of the molten bottom covering materials on the electrodes 12a, 12b, and 12e, leading to the incomplete blowout of the meltable conductor 15. If the covering ratio is lower than 29.7% (i.e., the comparative example C5), there is an insufficient amount of eutectic alloy formed from the bottom covering layer 15a and the first low melting point metal layer 15b. The meltable conductor 15 cannot be blown in two minutes. It is added that the covering ratio of the bottom covering layer 15a described above can be applied to the meltable conductors 15 with different sizes. For example, the length and width (length×width) of the core metal layer of the meltable conductor 15 may be 2.3 mm×2.3 mm, 1.85 mm×1.85 mm, or other sizes commonly used in the industry. Considering the measurement error and the permissible error tolerance, the covering ratio of the embodiments E3 to E7 may vary within the range of 30% to 90% while achieving the same or similar technical effect.
On the basis mentioned above, the aforementioned design of the bottom covering layer 15a can also be applied to the core metal layers with different layer number. Please refer to
It is added that the protection device 10 in
In an embodiment, the protection device 10 in
In another embodiment, in
To clearly describe the two embodiments of
In Table 4, the test groups E8 and E9 represent embodiments E8 and E9 of the present invention, respectively, and the test groups C6 and C7 represent comparative examples C6 and C7, respectively. More specifically, the meltable conductor 25 has the bottom covering layer 25a with a thickness of 0.26 mm, and its protection range in operating current is further expanded by adjusting the thickness of each layer within the core metal layer. It is noted that the protection devices 10 of the embodiment E8 and the comparative example C6 adopt the same configuration for the core metal layer (i.e., two layers of the low melting point metal layer 25b and one layer of the high melting point metal layer 25c laminated therebetween), and the only difference lies in the thickness ratio between the layers. Similarly, the protection devices 10 of the embodiment E9 and the comparative example C7 adopt the same configuration for the core metal layer (i.e., two layers of the high melting point metal layer 25c and one layer of the low melting point metal layer 25b laminated therebetween), and the only difference lies in the thickness ratio between the layers. The low melting point metal layer 25b is made of tin, and the high melting point metal layer 25c is made of silver. The melting point of the low melting point metal layer 25b is lower than that of the high melting point metal layer 25c, thereby accelerating the melting of the high melting point metal layer 25c.
According to the embodiment E8, the required blowout current varies as the thickness ratio of these two metal layers is adjusted based on the three different thickness ratios. More specifically, the thickness of the low melting point metal layer 25b is set within the range of 6 μm to 18 μm, and the thickness of the high melting point metal layer 25c is set within the range of 6 μm to 36 μm. By changing the ratio between them, the blowout current can be adjusted within the range of 72 A to 95 A. It is noted that the relative thickness of the high melting point metal layer 25c should not be too large. In the comparative example C6, as the high melting point metal layer 25c is too thick, it takes a longer time to blow the meltable conductor 25, exceeding the required blowout time (2 minutes) specified by the UL standard, that is, the meltable conductor 25 is not blown in 2 minutes. Additionally, the thickness of the low melting point metal layer 25b and the thickness of the high melting point metal layer 25c can be expressed in ratio based on the results of Table 4. The thickness of the low melting point metal layer 25b is defined as x, and the thickness of the high melting point metal layer 25c is defined as y. According to the embodiment E8, xy may be 1:6, 1:3, or 3:1. The aforementioned thickness ratios can be applied to the protection devices with different sizes while achieving the same or similar technical effect. For example, the thickness of the low melting point metal layer 25b may range from 5 μm to 21 μm, and the thickness of the high melting point metal layer 25c may range from 5 μm to 70 μm.
In the embodiment E9, the thickness of the low melting point metal layer 25b is set within the range of 6 μm to 120 μm, and the thickness of the high melting point metal layer 25c is set within the range of 6 μm to 18 μm. By changing the ratio between them, the blowout current can be adjusted within the range of 67 A to 76 A. It is noted that the relative thickness of the low melting point metal layer 25b should not be too large. In the comparative example C7, because the low melting point metal layer 25b is excessively thick, a severe eutectic effect occurs and the meltable conductor 25 cannot be properly assembled on the substrate 11. The low melting point metal layer 25b melts and erodes the high melting point metal layer 25c excessively under the high temperature of reflow welding, leading to the blowout of the meltable conductor 25 during assembly. According to the embodiment E9, x:y may be 20:3, 10:1, or 1:2. The aforementioned thickness ratios can be applied to the protection devices with different sizes while achieving the same or similar technical effect. For example, the thickness of the low melting point metal layer 25b may range from 5 μm to 140 μm, and the thickness of the high melting point metal layer 25c may range from 5 μm to 21 μm.
The present invention may be applied to the protection devices with different structural designs. Please refer to
The above-described embodiments of the present invention are intended to be illustrative only. Numerous alternative embodiments may be devised by persons skilled in the art without departing from the scope of the following claims.
Number | Date | Country | Kind |
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112133405 | Sep 2023 | TW | national |