Protective layer material for PDP and method of manufacturing the same

Abstract
An MgO protective layer formed on a front substrate of a plasma display panel and a method of manufacturing the protective layer are disclosed. The protective layer is manufactured by using an MgO pellet, which is simultaneously doped with a first doping material of BeO and/or CaO among alkali earth metals and a second material selected from the group consisting of Sc2O3, Sb2O3, Er2O3, Mo2O3, and Al2O3, as a deposition source through a vacuum deposition method. The protective layer remarkably improves a discharge efficiency of the PDP and shortens a discharge delay time, so that it is applied to a signal can PDP. Also, it lowers a manufacturing cost by reducing the number of electronic components.
Description

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which:



FIG. 1 is a perspective view schematically illustrating the structure of a plasma display panel;



FIG. 2 is a view depicting the process of emitting electrons based on Auger neutralization;



FIG. 3 is a graph depicting the experiment results obtained by comparing discharge efficiencies in case in which a discharge gas consisting of Ne and 4% Xe is used in panels each manufactured by using an MgO deposition source simultaneously doped with BeO and Sc2O3, an MgO deposition source doped with BeO, and an undoped MgO deposition source;



FIG. 4 is a graph depicting the experiment results obtained by comparing discharge efficiencies in case in which a discharge gas consisting of Ne and 10% Xe is used in panels each manufactured by using an MgO deposition source simultaneously doped with BeO and Sc2O3, an MgO deposition source doped with BeO, and an undoped MgO deposition source; and



FIG. 5 is a graph depicting the experiment results obtained by comparing discharge efficiencies in case in which a discharge gas consisting of Ne and 10% Xe is used in panels each manufactured by using an MgO deposition source simultaneously doped with BeO and Al2O3 and an undoped MgO deposition source.





DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, a preferred embodiment of the present invention will be described with reference to the accompanying drawings. The matters defined in the description, such as the detailed construction and elements, are nothing but specific details provided to assist those of ordinary skill in the art in a comprehensive understanding of the invention, and thus the present invention is not limited thereto.



FIG. 3 shows an embodiment of the present invention, which shows the experiment results obtained by comparing discharge efficiencies of a panel manufactured by using MgO, which contains BeO as a first doping material and Sc2O3 as a second doping material, as a deposition source through an electron beam deposition method; a panel manufactured by using MgO, which contains only BeO as a first doping material, as a deposition source through an electron beam deposition method; and a panel manufactured by a protective layer formed by using MgO as a deposition source.


It will be known from FIG. 3 that the light emitting efficiency of the panel manufactured by using the MgO deposition source doped with BeO of the first doping material is higher than that of the panel manufactured by using the undoped MgO deposition, but the light emitting efficiency of the panel manufactured by using the MgO deposition source simultaneously doped with BeO of the first doping material and Sc2O3 of the second doping material is further increased. The first doping material and the second doping material extrinsically form a defect level of holes and electrons in an MgO base, respectively, which contributes the improved characteristic. This experiment was measured under conditions of a discharge gas of Ne and 4% Xe and an AC discharge frequency of 30 kH.



FIG. 4 shows the influence of a doping element on the discharge efficiency, when the discharge gas is replaced by a discharge gas of Ne and 10% Xe under the same conditions as those of FIG. 3. It will be known from FIG. 4 that the light emitting efficiency of the panel manufactured by doping with BeO of the first doping material is higher than that of the panel manufactured by using the discharge gas of Ne and 4% Xe. In this instance, however, the light emitting efficiency of the panel manufactured by simultaneously doping with BeO of the first doping material and Sc2O3 of the second doping material is further increased.



FIG. 5 shows the discharge efficiency of the panel manufactured by simultaneously doping with BeO of the first doping material and Al2O3 of the second doping material. The result is obtained by using a discharge gas of Ne and 10% Xe. It will be known from FIG. 5 that the discharge efficiency is remarkably increased in case of simultaneously doping with BeO doping element to form holes and Al2O3 doping element to form trapped electron levels. The discharge efficiency is remarkably increased by applying the protective layer of the present invention to the PDP panel, thereby reducing the consumption power of the PDP and lowering a manufacturing cost.


Also, the present invention relates to a plasma display panel manufactured by using a front substrate with the protective layer formed thereon. The method of manufacturing the PDP using the front substrate with the protective layer is well known in the art, and thus will be not described in detail.


With the above description, the protective layer of the present invention consists of MgO containing BeO or CaO as a first doping material, and Sc2O3, Sb2O3, Er2O3, Mo2O3, or Al2O3 as a second doping material. The panel including the protective layer has good discharge characteristics of the increased discharge efficiency and the shortened discharge time. Consequently, the protective layer of the present invention can be applied to a high-resolution HD or full HD PDP.


Although preferred embodiments of the present invention have been described for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.

Claims
  • 1. A protective layer for an AC PDP, formed by using a deposition source comprising at least one first doping material selected from the group consisting of BeO and CaO and at least one second material selected from the group consisting of Sc2O3, Sb2O3, Er2O3, Mo2O3, and Al2O3 through a vacuum deposition process.
  • 2. The protective layer as claimed in claim 1, wherein the first doping material and the second doping material are respectively added into MgO in the range of 50 ppm to 8000 ppm.
  • 3. The protective layer as claimed in claim 2, wherein the first doping material and the second doping material range from 500 ppm to 2000 ppm, respectively.
  • 4. The protective layer as claimed in claim 1, wherein the first doping material is BeO, and the second doping material is Sc2O3.
  • 5. The protective layer as claimed in claim 1, wherein the first doping material is BeO, and the second doping material is Al2O3.
  • 6. The protective layer as claimed in claim 1, wherein the first doping material is CaO, and the second doping material is Sc2O3.
  • 7. The protective layer as claimed in claim 1, wherein the first doping material is CaO, and the second doping material is Al2O3.
  • 8. The protective layer as claimed in claim 1, wherein the protective layer comprises impurities of Fe of up to 30 ppm, Al of up to 50 ppm, Si of up to 50 ppm, Ni of up to 5 ppm, Na of up to 50 ppm, and K of up to 5 ppm.
  • 9. A method of forming a protective layer for an AC PDP, the method comprising: evenly mixing a deposition source of Mg(OH)2, a first doping material selected from the group consisting of BeO and CaO or a precursor thereof, and a second material selected from the group consisting of Sc2O3, Sb2O3, Er2O3, Mo2O3, and Al2O3 or a precursor thereof;pressing the mixture in a mold to form a pellet-shaped material;calcining the pellet-shaped material;sintering the pellet-shaped material to form a pellet for a deposition source used to form the protective layer; andvacuum depositing the pellet to form the protective layer.
  • 10. The method of forming the protective layer as claimed in claim 1, wherein the vacuum deposition is performed by electron-beam evaporation, ion plating, sputtering, or chemical vapor deposition.
  • 11. A method of forming a protective layer for an AC PDP, the method comprising: evenly mixing a deposition source of Mg(OH)2, a first doping material of BeO and/or CaO or a precursor thereof, and a second material selected from the group consisting of Sc2O3, Sb2O3, Er2O3, Mo2O3, and Al2O3 or a precursor thereof;arc fusing the mixture to form a single crystal; andvacuum depositing the single crystal under a hydrogen atmosphere to form the protective layer.
  • 12. The method of forming the protective layer as claimed in claim 11, wherein the vacuum deposition is performed by electron-beam evaporation, ion plating, sputtering, or chemical vapor deposition.
  • 13. An AC PDP comprising the protective layer as claimed in claim 1.
Priority Claims (1)
Number Date Country Kind
10-2006-0098603 Oct 2006 KR national