Patent Application
20210347644
The present invention is related to a purification method of high-purity n-tetrasilane, and more particularly to a purification method of high-purity n-tetrasilane by utilizing its freezing point property to separate it from i-tetrasilane.
The temperature requirement of the epitaxial film growth with silanes-employed processes is similar to the ones of germanes. Correspondingly, the application with silane/disilane is like the one of germane, the one of trisilane is similar to the one of digermane, and the employment of tetrasilane is resembled to the one of digermane or trigermane. The temperature requirement of the epitaxial film formation with tetrasilane can be as low as around 350° C., which is significantly lower than the formation temperature of applications with silane, disilane, and trisilane. Therefore, the application with tetrasilane holds an absolute advantage for the semiconductor epitaxial film growth process in the future.
At present, for higher silanes production with the silicon-magnesium alloy method, magnesium silicide is employed to react with ammonium chloride in an acidic solution. In such application, monosilane, however, is the primary product, whereas higher silanes, as desired products, are very rare. Yet, the cost of wastewater treatment post to the application is high, and the process equipment are all required to be strong-acid corrosion resistanted, which are all not economically cost-effective. The glow discharge method is the second way for higher silanes generation. Though the method is excellent in its reaction rate for the yield of higher silanes, due to the complexity of the systematic technologies it cannot be commercialized, and the application can only be limited to the laboratory-scale. Besides, in the silane pyrolysis method, which is the most practical approach, thermal energy is applied to silane or disilane to synthesize higher silanes, and the higher silanes obtained by such method contains not only tetrasilane isomers, namely n-tetrasilane and i-tetrasilane, but also heavier silanes, such as pentasilanes, hexasilane, etc.
In the semiconductor CVD process, it is extremely important to use silane-based precursors to control the film formation quality and yield rate. The energy data of cracking the epitaxial silanes obtained from the CVD process reveals that the energy required for cracking Si—Si bonds is 310 kJ/mole, and for Si—H bonds is 380 kJ/mole. For i-tetrasilane, it requires additional energy to crack an additional Si—H bond which leads to higher energy requirement for the epitaxial process compared to the application with n-tetrasilane. Also, the additional energy provided to the process increases the instability of the epitaxial film and causes the yield rate to reduce. The boiling points of the n-tetrasilane (108.1° C.) and the i-tetrasilane (101.7° C.) are too close, which is only 6.4° C. in difference; therefore, it is very difficult to separate the i-tetrasilane from the n-tetrasilane in the tetrasilane isomeric mixture, especially with about 25% to 30% of the i-tetrasilane is contained, with a typical distillation column. As well, it is not easy to efficiently purify the n-tetrasilane with a general distillation column. Moreover, it may require more than four distillation columns to effectively achieve the purification and separation. In other words, this purification method would demand higher equipment capital, operational cost, and energy consumption.
Therefore, it is desirable to provide a high-purity n-tetrasilane purification method to mitigate and/or obviate the aforementioned problems.
An objective of present invention is to provide a purification method for high-purity n-tetrasilane collection, which is capable of improving the above-mention problems.
In order to achieve the above-mentioned objective, a high-purity n-tetrasilane purification method includes: introducing a tetrasilane (Si4H10) isomeric mixture into a solidifying purification tank, cooling the tetrasilane (Si4H10) to a predetermined temperature with a refrigerant at the solidifying purification tank, maintaining the predetermined temperature between the freezing temperature of the i-tetrasilane (i-Si4H10) and the n-tetrasilane (n-Si4H10) to condense the n-tetrasilane (n-Si4H10) into its solid form, and vacuuming the liquid i-tetrasilane (i-Si4H10) in the tetrasilanes isomeric mixture for separation.
Other objects, advantages, and novel features of this invention will become more apparent from the details of following description when the accompanying drawings are taken in conjunction with.
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The solidifying purification tank 10 is evacuated until the pressure in the tank reaches −1.0 kg/cm2G, and with the degree of vacuum pressure, it indicates that the liquid and vapor substances are all removed from the mixture. The solidifying purification tank 10 is then warmed up to the ambient state to convert the remaining solid n-tetrasilane (n-Si4H10) to its liquid state. Furthermore, the solidifying purification tank 10 is connected with an output tube 13 to a distillation tower 20. The output tube 13 is used to discharge the liquid n-tetrasilane (n-Si4H10) to the distillation tower 20 by filling the pressurized helium to shove all of the n-tetrasilane (n-Si4H10) to the distillation tower 20 without consuming any energy. At the distillation tower 20, the pentasilanes (Si5H12) and heavier silanes, with boiling point higher than 130˜153° C., contained in the tetrasilane mixture are further separated from the n-tetrasilane (n-Si4H10) through the bottom of the distillation tower 20, and the remaining PPM-graded of silanes, trisilane (Si3H8) and i-tetrasilane (i-Si4H10), with boiling temperatures lower than 101.7° C., are removed through the top of the distillation tower 20 by differences in their boiling temperatures. Since most of i-tetrasilane (i-Si4H10) and lower silanes are removed in the earlier process at the solidifying purification tank 10, the residual i-tetrasilane (i-Si4H10) in the distillation tower 20 is rare, and it does not affect the boiling temperature (108.1° C.) of the n-tetrasilane (n-Si4H10) for the fractional distillation purification. With the above proposed purification method, the n-tetrasilane (n-Si4H10) with a purity of 99.99% is then carried out by the final distillation purification at low cost in combined with simple equipment and low energy-consuming process.
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Although the present invention has been explained in relation to its preferred embodiment, it is to be understood that many other possible modifications and variations can be made without departing from the spirit and scope of invention as hereinafter claimed.
