Claims
- 1. A quadrature switch apparatus for multi-mode phase shift drivers comprising in combination:
- an impedance means,
- a linear driver means operatively connected to one end of said impedance means, said linear driver means applying a linear drive signal to said impedance means,
- a switch means operatively connected to the other end of said impedance means, said switching means to provide high speed bi-directional high voltage random mode switching, said switch means including a switchable ground reference, said switch means comprises a first and second MOSFET switch means in series and a third and fourth MOSFET switch means in series, said first and second MOSFET switch means is in parallel with said third and fourth MOSFET switch means, a first junction between said first and second switch means operatively connected to said impedance means, a second junction between said third and fourth MOSFET switch means operatively connected to ground, a third junction between said first and third MOSFET switch means operatively connected to one side of said high voltage power supply means, a fourth junction between said second and fourth MOSFET means operatively connected to the other side of said high voltage power supply means, and,
- a high voltage power supply means operatively connected to said switch means, said high voltage power supply means being floating with respect to said ground reference, said high voltage power supply means being switchably connected to said impedance means to provide a bi-directional high voltage reset signal to said impedance means.
- 2. A quadrature switch apparatus as described in claim 1 including a capacitive storage means operatively connected across said high voltage power supply means.
- 3. A quadrature switch apparatus as described in claim 1 wherein each MOSFET switch means of said first, second, third and fourth switch means comprises respectively a plurality of MOSFET devices which are operatively connected in series.
- 4. A quadrature switch apparatus as described in claim 3 wherein each MOSFET device of said plurality of MOSFET devices includes a diode means operatively connected across said MOSFET device between its source and drain.
STATEMENT OF GOVERNMENT INTEREST
The invention described herein may be manufactured and used by or for the Government for governmental purposes without the payment of any royalty thereon.
US Referenced Citations (7)