QUANTUM DOT ENSEMBLE AND MANUFACTURING METHOD THEREOF

Abstract

A manufacturing method of a quantum dot ensemble including quantum dots each having a composition represented by a formula AxB1-xCyD1-y (0≦x≦1, 0≦y≦1, A and B are elements selected from Zn and Mg, and C and D are elements selected from the group consisting of O, S, Se, and Te). The quantum dots forming the ensemble in a mixed manner, including (a) step of preparing a plurality of quantum dots each having a composition represented by a formula AxB1-xCyD1-y (0≦x≦1, 0≦y≦1, A and B are elements selected from the group consisting of Zn and Mg, and C and D are elements selected from the group consisting of O, S, Se, and Te); and (b) step of uniformizing band gap energy of the plurality of quantum dots by optically etching the plurality of quantum dots which are prepared in the step (a). In the step (a), target values of x and y in the formula AxB1-xCyD1-y are set in such a manner that band gap energy of AxB1-xCyD1-y attains an approximately minimal value. In the step (b), the quantum dot ensemble including the quantum dots in which at least one of x and y in the formula AxB1-xCyD1-y is varied by equal to or greater than 0.05 is processed, the quantum dot ensemble having an emission spectrum of which the half-width is less than 50 nm is processed, the quantum dot ensemble having a band gap energy which is greater than a band gap energy of a bulk mixed crystal having a same composition as the composition of each of the plurality of quantum dots included in the quantum dot ensemble is processed, and the plurality of quantum dots are processed such that the average particle size thereof is equal to or less than 20 nm.

Description

BACKGROUND OF THE INVENTION

A) Field of the Invention

The present invention relates to a quantum dot ensemble, and a manufacturing method thereof. For example, the invention relates to a quantum dot ensemble having a uniform band gap, even when variations in a size and a composition are large, and a manufacturing method thereof. In a case of quantum dots which are formed of a group II-VI ZnOS semiconductor material consisting of ternary or more compositions, a specific effect is exhibited.

The quantum dots are formed by using a semiconductor material and are particles of which an average particle size is in the range of nanometers. Here, the average particle size represents a median diameter when a distribution of an equivalent circle diameter is formed based on the number of particles, in which the area equivalent circle diameter is calculated for each particle by observing the quantum dots with a transmission electron microscope.

B) Description of the Related Art

As quantum dots consisting of a binary crystal of a group II-VI semiconductor material, quantum dots having a relatively uniform size and composition can be obtained through, for example, a liquid phase synthesis method represented by a hot injection method. However, in a case of a ternary mixed crystal, it cannot be said that ease of control of the size and composition thereof is sufficient.

In the quantum dots, an energy gap is changed depending on the size thereof and a composition of a crystal. The change of the energy gap due to the size is limited to a case of a nanometer size, and the reason for this is that a quantum effect is expressed.

Particularly, in a ternary mixed crystal, an emission spectrum spreads due to variations in the size and composition, and thus, it is difficult to manufacture quantum dots having an emission spectrum of a narrow band. In addition, after manufacturing the quantum dots, separating and selecting the quantum dots having the variations in the size and composition lead to significant reduction in yield and significant increase in cost, which is not realistic.

For example, ZnO_xS_1-x, quantum dots are capable of being synthesized through a solution method such as a solvothermal method by using a hot soap method and an autoclave, or a vapor phase such as a sputtering method. However, in the quantum dots which are synthesized through the above methods, it is difficult to control the size and composition, and thus, quantum dots having different size and composition may be mixed into the synthesized quantum dot ensemble. For this reason, a half-width of an emission spectrum of the quantum dot ensemble broadly spreads in a range of 50 nm to 200 nm, and thus, it is difficult to realize a narrow emission spectrum.

FIG. 13 is a graph illustrating a relationship between an O composition x and size of ZnO_xS_1-x, and a light emitting wavelength. ZnO_xS_1-x, is synthesized by setting the O composition x to be 0.6, and the size to be 4.0 nm (light emitting wavelength is set to be 405 nm (3.06 eV)), and in the synthesized ZnO_xS_1-x, in a case where the variation in each of the O composition x and the size is generated in the respective ranges of 0.4 to 0.8 and 3.0 nm to 6.0 nm, the light emitting wavelength spreads in a range of 335 nm to 440 nm (3.70 eV to 2.84 eV). The light emitting wavelength is widened, and thus, it is very difficult to suppress the half width of the emission spectrum to be less than 50 nm.

Meanwhile, also in a core/shell type quantum dots, for example, when a shell layer is formed of a mixed crystal consisting of three or more elements, it is difficult to control a mixed crystal ratio. In the quantum dot ensemble, the band gap energy of the shell layer is varied for the quantum dots as a composition ratio of the shell layer is varied for each quantum dot. For this reason, even in a case where the band gap energy of a core layer (which includes a single composition, a binary composition, and a ternary or more mixed crystal composition) is constantly controlled, a confinement effect of the core layer is changed for each quantum dot. That is, the wavelength spectrum of the quantum dot ensemble broadly spreads, and thus, it is difficult to obtain a narrow emission spectrum.

SUMMARY OF THE INVENTION

Accordingly, it is an object of the present invention to provide a quantum dot ensemble in which a half-width of an emission spectrum is narrow, for example, the half width is less than 50 nm, and a manufacturing method thereof.

According to an aspect of the invention, there is provided a quantum dot ensemble which includes quantum dots each have a composition represented by a formula A_xB_1-xC_yD_1-y (0≦x1, 0≦y≦1, A and B are elements selected from the group consisting of Zn and Mg, and C and D are elements selected from the group consisting of O, S, Se, and Te) and form the ensemble in a mixed manner in which at least one of x and y in the formula A_xB_1-xC_yD_1-y is varied by equal to or greater than 0.05, the quantum dots have an average particle size that is equal to or less than 20 nm and a band gap energy of the quantum dot ensemble is greater than a band gap energy of a bulk mixed crystal, and a half-width of an emission spectrum is less than 50 nm.

In addition, according to another aspect of the invention, there is provided a quantum dot ensemble which includes quantum dots each have a composition represented by a formula Al_xGa_yIn_zN (0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z=1) and form the ensemble in a mixed manner, in which at least one of x, y, and z in the formula Al_xGa_yIn_zN is varied by equal to or greater than 0.05, the quantum dots have an average particle size that is equal to or less than 20 nm and a band gap energy of the quantum dot ensemble is greater than a band gap energy of a bulk mixed crystal, and a half-width of an emission spectrum is less than 50 nm.

Further, according to still another aspect of the invention, there is provided a manufacturing method of a quantum dot ensemble, the method including (a) a step of preparing a plurality of quantum dots, and (b) a step of uniformizing band gap energy of the plurality of quantum dots by optically etching the plurality of quantum dots which are prepared in the step (a).

In the above optical etching step, the plurality of quantum dots have a varied band gap because one of, or both of a mixed crystal composition and a size are varied. Then, the plurality of quantum dots having the varied band gap are put into an etchant, and are irradiated with the light corresponding to a target band gap. The quantum dots having a band gap which is narrower than the irradiation light are dissolved by an excited carrier, and thus, the band gap widens. On the other hand, quantum dots having a band gap which is wider than the irradiation light do not absorb the light, and thus are not dissolved. For this reason, it is possible to uniformize a band gap of a quantum dot ensemble which has variations in the composition and size, for example.

FIG. 14 schematically illustrates a change of the quantum dots through the optical etching.

The quantum dots having variations in the composition and (or) the size are uniformized to be a certain size through, for example, an etching process by light control. The etching is performed on the quantum dots having a size which is sufficient for absorbing the irradiation light. In addition, when the size of the quantum dot becomes small through the etching, and then the irradiation light transmits through the quantum dot, the etching is stopped. In the optical etching, it is possible to control the quantum dots to have, for example, a desired uniformed size by selecting the wavelength of the light.

Meanwhile, for example, in a case of a single composition of a ternary mixed crystal, each of a size and an energy gap is constant. When the composition is varied, the size is varied, but the energy gap is constant.

According to the invention, it is possible to provide a quantum dot ensemble which has a small half width of the emission spectrum, for example, the half width which is less than 50 nm, and a manufacturing method thereof.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1A is a graph illustrating a relationship between an O composition x and band gap energy in a mixed crystal of ZnO_xS_1-x, and FIG. 1B is a graph illustrating a relationship between crystal sizes of ZnO and ZnS and a light emitting wavelength (band gap energy).

FIG. 2 is a flow chart schematically illustrating a manufacturing method of a quantum dot ensemble according to a first embodiment.

FIG. 3A is a schematic diagram of a manufacturing apparatus which manufactures quantum dots (a base material) through a hot injection method, and FIG. 3B is a schematic diagram of an ensemble (ZnO_xS_1-x, nanoparticle ensemble) of quantum dot base materials.

FIG. 4A is a schematic diagram of an optical etching apparatus, FIG. 4B is a schematic diagram illustrating a quantum dot ensemble (ZnO_xS_1-x nanoparticle ensemble) after being irradiated with the light, and FIG. 4C is a graph illustrating a relationship between the O composition x and the size of the quantum dot ensemble after being irradiated with the light, and the band gap energy (light emitting wavelength).

FIG. 5 is a diagram illustrating a band line-up of In_yAl_1-yN (0<y<1) and ZnO_xS_1-x (0<x<1).

FIG. 6A is a flow chart schematically illustrating a manufacturing method of a quantum dot ensemble according to a second embodiment, and FIG. 6B is sectional view schematically illustrating the quantum dot (a core/shell structure) ensemble manufactured through the manufacturing method according to the second embodiment.

FIG. 7 is a flow chart schematically illustrating a manufacturing method of a quantum dot ensemble according to a third embodiment.

FIG. 8 is a sectional view of a quantum dot manufactured through a manufacturing method of according to a third embodiment and is a diagram illustrating a target value of a band structure.

FIG. 9 is a flow chart schematically illustrating a manufacturing method of a quantum dot ensemble according to a fourth embodiment.

FIG. 10 is a sectional view of the quantum dot which is manufactured through the manufacturing method according to the fourth embodiment, and is a diagram illustrating a target value of the band structure.

FIG. 11 is a flow chart schematically illustrating a manufacturing method of a quantum dot ensemble according to a fifth embodiment.

FIG. 12 is a sectional view of the quantum dot manufactured through the manufacturing method according to the fifth embodiment, and is a diagram illustrating a target value of a band structure.

FIG. 13 is a graph illustrating a relationship between an O composition x and a size of ZnO_xS_1-x, and a light emitting wavelength.

FIG. 14 is a diagram conceptionally illustrating a change of quantum dots by optical etching.

DESCRIPTION OF EMBODIMENTS

The embodiments of the invention will be described by exemplifying light emitting nanoparticles (quantum dots) formed of a ternary ZnO_xS_1-x (0<x<1) which is a group II-VI compound semiconductor.

First, a ZnO_xS_1-x mixed crystal will be briefly described.

FIG. 1A is a graph illustrating a relationship between an O composition x and band gap energy in a mixed crystal of ZnO_xS_1-x. In FIG. 1A, the relationship between the O composition x and the band gap energy in a case where particle sizes are 3 nm, 4 nm, 6 nm, and 20 nm. The curved lines represent 3 nm, 4 nm, 6 nm, and 20 nm in order from the above. A circle represents a position in which x is 0.6, and the particle size is 4.0 nm. A variation in the O composition x is set to be in a range of 0.4 to 0.8, a variation in the size is set to be in a range of 3.0 nm to 6.0 nm, and then the ranges are darkly shaded. In addition, a ZnO_xS_1-x mixed crystal has a large variation in the composition.

For example, according to a technique in the related art, when a target value is set that the O composition x is 0.6 and the size is 4.0 nm in the ZnO_xS_1-x, it is possible to manufacture a nanoparticle ensemble in which the particle having the O composition x in a range of 0.4 to 0.8, and the size in a range of 3.0 nm to 6.0 nm is mixed (in the ZnO_xS_1- mixed crystal, since the variation in the composition and a bowing phenomenon are large, a synthesized nanoparticle becomes a nanoparticle having a value that the O composition x is in a range of 0.4 to 0.8 and the size is in a range of 3.0 nm to 6.0 nm on the basis of the target value that the O composition x is 0.6 and the size is 4.0 nm).

In a case where the variation in the O composition x is set to be in the range of 0.4 to 0.8 and the variation in the size is set to be in the range of 3.0 nm to 6.0 nm, the band gap energy becomes in a range of 2.84 eV to 3.65 eV (the light emitting wavelength becomes in a range of 440 nm to 340 nm).

In addition, the band gap energy of each of the ZnO and ZnS is 3.2 eV and 3.8 eV, and a bowing parameter b is 3.0. The ZnO_xS_1-x (x=0.6) mixed crystal having 4.0 nm of particle size has a large bowing parameter, and thus, has smaller band gap energy than that of a binary crystal of ZnO and ZnS.

FIG. 1B is a graph illustrating a relationship between crystal sizes of ZnO and ZnS and a light emitting wavelength (band gap energy) in a state where a curved line on the right side is ZnO, and a curved line on the left side is ZnS. Regarding the ZnO_xS_1-x (0<x<1) mixed crystal, if the size is set to be equal to or less than 20 nm, or particularly, is set to be equal to or less than 10 nm in order to calculate a value between two curved lines illustrated in FIG. 1B, a carrier is confined due to a quantum effect, and thus, the light emitting wavelength is shifted to the short wavelength side (the side on the band gap energy is high).

In addition, each band gap energy (ZnO is 3.2 eV and ZnS is 3.8 eV) of the above-described ZnO and ZnS corresponds to the wavelength little less than 390 nm and the wavelength little less than 330 nm.

As illustrated in FIG. 1A and FIG. 1B, it is possible to change the band gap such that an energy level of as low as 2.7 eV which cannot be realized in the binary crystal of ZnO and ZnS (refer to the curved line at a size of 20 nm in FIG. 1A) is changed to an energy level of as high as 6.0 eV (refer to FIG. 1B. In ZnO_xS_1-x (0<x<1) close to ZnS (x is close to 0), the wavelength can be changed to be less than 205 nm (energy conversion: 6.0 eV) due to the quantum effect) by controlling the mixed crystal composition and the size of ZnO_xS_1-x (0<x<1).

FIG. 2 is a flow chart schematically illustrating the manufacturing method of the quantum dot ensemble according to the first embodiment.

In the first embodiment, first, a quantum dot base material is prepared, and is synthesized as an example (Step S101). Next, a step of controlling the size of the quantum dot base material which is prepared (synthesized) in Step S101 is performed. Specifically, the prepared quantum dot base material is etched through the selective optical etching (Step S102).

In a particulating process in the selective optical etching step (Step S102), for example, the quantum dots (the base material) are dispersed in the solution, the dispersion liquid is irradiated with narrow band light. With this, only the particles having the large size are activated by absorbing the light, and then are etched. The quantum dots having the size which is sufficient for absorbing the light aer etched, and thus the size thereof is reduced. When the size is reduced, the band gap becomes larger due to the quantum effect. When the band gap becomes larger than the energy of the irradiation light, the light transmits without absorbing the light. If the light transmits through the quantum dot, the etching is stopped. When the band gap for each the quantum dot is uniformized in the quantum dot ensemble through the selective optical etching step (Step S102), it is possible to selectively synthesize, for example, the quantum dots having the same band gap, that is, the same light emitting wavelength.

In the first embodiment, target values of the O composition x and the size of the quantum dot which is ultimately manufactured are respectively 0.60 and 4.0 nm.

In addition, a spherical quantum dot base material is formed in the embodiment. After the selective optical etching, the quantum dot is also formed into a spherical shape.

FIG. 3A is a schematic diagram of a manufacturing apparatus which manufactures quantum dots (a base material) through a hot injection method. A synthesizing step (Step S101) of the quantum dot base material will be described with reference to FIG. 3A.

A quartz flask (300 cc) is prepared as a reaction container. A port, through which an inert gas can be replaced with air in the flask, and a dedicated port, into which a reactive precursor can be injected, are attached to the flask in addition to an outlet. TOPO (tri-n-octyl phosphine oxide) and HDA (Hexadecylamine) which are reaction solvents are put into the flask, are heated at 300° C. in an inert gas atmosphere, and then dissolved. For example, 8 g of TOPO, 4 g of HDA, and argon (Ar) as the inert gas are used. The above materials are stirred with a stirrer such that heating unevenness is hardly caused.

Next, syringes which are respectively filled with, as the reactive precursor, diethyl zinc (Zn(C₂H₅)₂) sealed by the inert gas (for example, Ar), octylamine (C₈H₁₇NH₂) which is bubbled with oxygen, and bis(trimethylsilyl) sulfide (thiobis) are respectively prepared. Oxygen is entrapped into octylamine (C₈H₁₇NH₂) by being bubbled with oxygen. For example, diethyl zinc (Zn(C₂H₅)₂), octylamine (C₈H₁₇NH₂) into which the oxygen is entrapped, and bis(trimethylsilyl) sulfide (thiobis) are respectively adjusted to be 4.0 mmol, 2.4 mmol, and 1.6 mmol. By adjusting as described above, a ZnO_0.60S_0.40 mixed crystal nanoparticle (O composition x is 0.60 which is a target value) is synthesized in the first embodiment. In addition, when the O composition x is synthesized with the ZnO_xS_1-x mixed crystal nanoparticle which is different from the O composition x, the ratio of diethyl zinc (Zn(C₂H₅)₂), octylamine (C₈H₁₇NH₂), and bis(trimethylsilyl) sulfide (thiobis) may be changed.

When the reaction solvent has reached a reaction temperature, the reactive precursor is immediately put into the flask by using each syringe. A nucleus crystal of ZnO_xS_1-x is generated by thermal decomposition of the reactive precursor. If the reactive precursor is left to stand as it is, most of the reactive precursors are used to form the nucleus, and different sizes of nuclei are generated over time, and thus, the temperature of the flask is rapidly cooled to 200° C. immediately after injecting the reactive precursor. Thereafter, a growth of ZnO_xS_1-x is performed in such a manner that the reaction solvent is heated again up to 240° C., and kept at a certain temperature for 40 minutes.

The flask is naturally cooled to 100° C., and then left to stand for one hour. With this, it is possible to stabilize the surface of the nanoparticle. This process is called a stabilizing process. Thereafter, butanol as an anti-caking agent is added to the reaction solution which is cooled to room temperature and the reaction solution is left to stand for 10 hours so as to prevent the nanoparticles from being aggregated. This process is called an aggregation prevention process. The mixture is purified by repeatedly performing centrifugation (4000 rpm for 10 minutes) by alternately using dehydrated methanol in which the solvent (TOPO) is dissolved, and toluene which disperses the nanoparticles. As a result, unnecessary raw materials and the solvent are removed. This process is called a purifying process.

As described above, in the step of synthesizing the quantum dot base material (Step S101), a number of ZnO_0.60S_0.40 nanoparticles (O composition x is 0.60 which is the target value) are synthesized. FIG. 3B illustrates a schematic diagram of an ensemble (ZnO_xS_1-x nanoparticle ensemble) of the quantum dot base materials.

In the embodiment, for example, all of the nanoparticles (base materials) are synthesized in a size larger than the size of the target particle. In the first embodiment in which the target values of the O composition x and the size of the quantum dots which are manufactured at final are respectively 0.60 and 4.0 nm, the nanoparticles (base material) are synthesized in a size which is larger than 4.0 nm, for example, the size which is larger than 10 nm, or the size which is larger than 20 nm.

However, since variations in the mixed crystal composition and the particle size occur in the quantum dot base material (nanoparticle) (for example, the variation occurs in the size in the range which is greater than the target size. At the time of the base material synthesis, in a case where the nanoparticle having the size which is larger than 4.0 nm is synthesized, variation occurs in the range in which the size is greater than 4.0 nm.), the light emitting wavelength is widened (the half width of the emission spectrum is, for example, equal to or greater than 50 nm).

FIG. 4A is a schematic diagram of an optical etching apparatus. A selective optical etching step (Step S102) will be described with reference to FIG. 4A.

The quantum dot base material (the ZnO_0.60S_0.40 nanoparticle) which is synthesized in Step S101 is in a state of being dispersed in the methanol after the stabilizing process, the aggregation prevention process, and the purifying process. Here, the methanol is vaporized so as to concentrate the nanoparticles. At this time, if the methanol is completely vaporized, the nanoparticles are aggregated, and therefore, it is preferable that the methanol slightly remains. Ultra pure water which is an optical etching liquid is added to the methanol and a solution of nanoparticle. The mixture is kept at 25° C., and is bubbled with oxygen for 5 minutes.

After being bubbled, the mixture is moved to the sealed container (the flask in FIG. 4A), and then the etching liquid is irradiated with the light having the light emitting wavelength of 405 nm (3.06 eV) and a half-width of 6 nm, which is the light having a wavelength which is sufficiently shorter than an absorption edge wavelength of the ZnO_0.60S_0.40 nanoparticle. The mercury lamp is used as a light source, and the light emitted from the mercury lamp is used by being separated with a monochromator.

In the ZnO_0.60S_0.40 quantum dot ensemble in which the variation occurs in the absorption edge wavelength of the band gap, due to the variations in the mixed crystal composition and the particle size, the particle having the size which is sufficient for absorbing the light absorbs the light such that the light dissolution reaction occurs, the surface of the particle is dissolved in a light dissolving liquid, and thus, the diameter of the particle is gradually decreased. For this reason, as the etching is progressed, the absorption edge wavelength of each particle to be etched is shifted to the short wavelength side. Until the absorption edge wavelength of the quantum dot ensemble becomes shorter than the wavelength of the irradiation light, and the light dissolution reaction is stopped, the quantum dot ensemble is constantly irradiated with the light. The light irradiation is performed, for example, for 20 hours.

FIG. 4B illustrates a schematic diagram of the quantum dot ensemble (ZnO_xS_1-x nanoparticle ensemble) after being irradiated with the light. The quantum dots having a different mixed crystal composition are mixed in the quantum dot ensemble after being irradiated with the light. In addition, the particle size distribution exists.

FIG. 4C illustrates the relationship between the O composition x and the size of the quantum dot ensemble after being irradiated with the light, and the band gap energy (the light emitting wavelength). Four curved lines in FIG. 4C are the same as those in FIG. 1A. After being irradiated with the light, the quantum dot ensemble has the O composition x is in a range of 0.80 to 0.40, and the size is in a range of 4.0 nm to 6.0 nm on the basis of the target value that the O composition x is 0.60 and the size is 4.0 nm.

However, in the quantum dot ensemble after being irradiated with the light, the light emitting wavelength of the quantum dots are uniformized. For example, a nanoparticle ensemble of 3.06 eV having the band gap energy which is equivalent to the energy of the irradiation light is formed.

As described above, due to the quantum effect through the selective optical etching in Step S102, for example, the variation occurs in the O composition x in a range of 0.40 to 0.80; however, it is possible to manufacture only semiconductor nanoparticles having the constant light emitting wavelength. The nanoparticle (base material) varied in the size, which is larger than the target size is, subjected to the optical etching so as to make particle size small, even though the compositions are different from each other, thereby allowing the quantum dot ensemble having the target wavelength to be obtained.

With the selective optical etching step in Step S102, it is possible to manufacture, for example, the ZnO_0.60S_0.40 mixed crystal nanoparticles (the quantum dots) which have the same band gaps as each other, that is, have the same light emitting wavelength as each other.

In addition, in common with all of the examples including examples described below, the quantum dot ensemble after being irradiated with the light (after performing the selective optical etching) has the band gap energy which is greater than the band gap energy of the bulk mixed crystal due to the quantum effect.

The emission spectrum of an aqueous solution which is obtained by dispersing the quantum dot ensemble (ZnO_0.60S_0.40 nanoparticle ensemble) manufactured by the manufacturing method according to the first embodiment is evaluated by using a spectrophotometer. The emission spectrum having a half-width of 45 nm is obtained by observing the emission spectrum by using the excitation wavelength of 365 nm.

In the first embodiment, the quantum dots are formed of the ternary semiconductor material which has the band gap smaller than that of the binary semiconductor material. In addition, the quantum dots having different mixed crystal compositions are mixed in the quantum dot ensemble (the ZnO_0.60S_0.40 nanoparticle ensemble) which is manufactured through the manufacturing method according to the first embodiment. However, the band gap for each particle is uniformized, and the half width of the emission spectrum as the quantum dot ensemble is less than 50 nm (45 nm). In this way, in the quantum dot ensemble (a nanoparticle phosphor) which is manufactured through the manufacturing method according to the first embodiment, the half width of the emission spectrum is small (the narrow spectrum of light emitting wavelength can be realized).

The light with which the quantum dots (the base material) are irradiated in the optical etching step (Step S102) is the light of the wavelength corresponding to, for example, the band gap (the light emitting wavelength) which is to be obtained at last. In order to uniformly perform the etching in a short time, the light having a small width of the wavelength and high intensity is preferable. Specifically, it is possible to preferably use monochromatic light which is obtained by filtering the light derived from continuous light sources such as laser (continuous waves), and a mercury lamp through a monochromator or a filter. The light is guided into the container in which the nanoparticle is put by the optical fiber such that the quantum dots are irradiated with the light.

In the embodiment, water (ultra pure water) is used as the etching liquid; however, the material as the etching liquid is not particularly limited, as long as a selection ratio of the etching rate is obtained at the time of the light irradiation and non-irradiation. Meanwhile, pH or the temperature of the etching liquid may be adjusted so as to adjust the etching rate.

The quantum effect in which the band gap is changed depending on the particle size is used in the manufacturing method of the quantum dots according to the embodiment. For this reason, the size of the quantum dots which are finally obtained through the selective optical etching step in Step S102 is desired to be within the range of size in which the effect is sensitively obtained. When referring to FIG. 1B, it is found that if the size is decreased, a change amount of the band gap (the wavelength) is increased, that is, the quantum effect can be sensitively obtained. The size of the quantum dots (the average particle size) which are finally obtained is preferably equal to or less than 20 nm, and more preferably equal to or less than 10 nm.

In the synthesizing step of the quantum dot base material in Step S101, the ZnO_xS_1-x particle which is the quantum dot base material is synthesized in a size larger than the size for the final quantum dots. That is, the ZnO_xS_1-x particle is synthesized in a size which is larger than 10 nm or 20 nm, for example. The variations in the composition and the size occur between the quantum dots (base material particles). For example, the variation in the O composition x occurs in a range of 0.40 to 0.80.

Note that, the O composition is set to be 0.60, and the S composition is set to be 0.40 in the first embodiment; however, the values are not limited thereto.

Subsequently, a manufacturing method of a quantum dot ensemble according to a second embodiment will be described. The quantum dot ensemble according to the second embodiment is a type II light emitting nanoparticle ensemble including a core layer formed of a ternary In_yAl_1-yN (0<y<1) crystal which is a group compound semiconductor, and a shell layer formed of a ternary ZnO_xS_1-x (0<x<1) crystal which is a group II-VI compound semiconductor. With the shell layer formed, for example, it is possible to realize the quantum dots which are highly reliable, and chemically and thermally stable. The type II is a structure which has a different spatial position in which electrons and holes are confined by using interband transition between adjacent materials.

First, with reference to FIG. 5, the band line up of In_yAl_1-yN (0<y<1) and ZnO_xS_1-x (0<x<1) will be described below.

For example, in a case where the core layer is formed of In_yAl_1-yN (for example, y=0.67), and the shell layer is formed of ZnO_xS_1-x (for example, x=0.75), a type II bonding which is accompanied with the band line up as illustrated in FIG. 5 is ideal. Unlike the type I bonding, the light-emitting transition occurs between a conduction band of ZnO_xS_1-x and a valance electron band of In_yAl_1-yN. For this reason, the type II bonding is particularly suitable for emitting the light to, particularly, an area with small light emitting energy such as an infrared area.

However, as for the ternary mixed crystal of ZnO_xS_1-x (0<x<1), it is difficult to control the composition of the mixed crystal. For example, when the target O composition is set that x=0.75, if approximately ±30% of variation in the composition occurs, the shell layer having the O composition range x which is in a range of approximately 0.5 to 0.9 can be formed. As a result, an energy difference Δ Ec of the valance electron band between an In_yAl_1-yN core layer and a ZnO_xS_1-x shell layer satisfies 0<Δ Ec<0.49 eV. In addition, an energy difference Δ Ev of the conduction band is greatly changed such that 0.95 eV<Δ Ev<1.35 eV is satisfied. In the type II bonding, the light emission is caused in the energy level between the core and the shell, and thus, the variation in the composition ratio causes the change of the energy level, which is a serious problem.

FIG. 6A is a flow chart schematically illustrating the manufacturing method of the quantum dot ensemble according to the second embodiment.

In the second embodiment, first, the In_yAl_1-yN core layer is formed (Step S201a). Next, the ZnO_xS_1-x shell layer is formed so as to be stacked on the In_yAl_1-yN core layer formed in Step S201a (Step S201b). Then, the ZnO_xS_1-x shell layer is etched through the selective optical etching (Step S202).

Step S201a and Step S201b in the second embodiment are steps corresponding to Step S101 in the first embodiment. In addition, Step S202 in the second embodiment is a step corresponding to Step S102 in the first embodiment.

In Step S201a, the In_yAl_1-yN core layer is synthesized by using a liquid phase method such as the hot soap method. In Step S201b, the ZnO_xS_1-x shell layer including the In_yAl_1-yN core layer is formed in a size larger than the final target size (thickness). For example, the ZnO_xS_1-x shell layer is formed in a size (thickness) which is larger than 10 nm or 20 nm. In the ZnO_xS_1-x shell layer formed in Step S201b, for example, the variation in the composition occurs in a range of approximately ±30% with respect to the target composition.

In Step S202, an etching liquid, which has the core/shell structure formed in Step S201a and Step S201b, such as water is irradiated with the light having the light emitting wavelength of 405 nm (3.06 eV), and the half width of 6 nm, as in the first embodiment. Due to the light irradiation, for example, in the ZnO_xS_1-x shell layer having the variation in the size (thickness) which is larger than 10 nm, the etching is performed when the shell having a size enough for absorbing the light, and thus the size is decreased (the thickness becomes smaller). On the other hand, when the etching is performed and the size is decreased (the thickness becomes smaller), the energy becomes larger due to the quantum effect such that the light transmits. When the light transmits, the etching is stopped. With the selective optical etching step in Step S202, it is possible to form the ZnO_xS_1-x shell layer which is formed of ZnO_xS_1-x, for example, having the same band gap energy.

FIG. 6B illustrates a schematic sectional view of the quantum dot (a core/shell structure) ensemble manufactured through the manufacturing method according to the second embodiment. Quantum dots having, for example, a different diameter and shell thickness are mixed in the quantum dot ensemble manufactured through the manufacturing method according to the second embodiment. However, the band gap energy of the shell layer for each quantum dot is, for example, constant.

The ensemble having a core/shell structure (the ZnO_xS_1-x shell layer) which is manufactured through the manufacturing method according to the second embodiment has the same effect as that of the quantum dot ensemble manufactured through the manufacturing method according to the first embodiment. Further, according to the manufacturing method in the second embodiment, it is possible to make the band gap energy of the shell layer constant, and thus in the type II light emitting nanoparticle using the ZnO_xS_1-x shell layer in which various compositions are mixed, it is possible to perform a stable light-emitting transition.

FIG. 7 is a flow chart schematically illustrating the manufacturing method of the quantum dot ensemble according to the third embodiment. The quantum dots manufactured in the third embodiment are a core/shell type quantum dots (light emitting nanoparticles) which have a structure in which a ternary ZnO_xS_1-x (0<x <1) core formed of a group II-VI semiconductor material is coated with an AlN shell.

In the third embodiment, first, the quantum dot base material is formed, and then the synthesized quantum dot base material is etched through the selective optical etching so as to form the ZnO_xS_1-x core layer (Step S301). Next, an AlN shell layer is formed on the ZnO_xS_1-x core layer which is formed in Step S301 (Step S302). Step S301 in the third embodiment is a step corresponding to Step S101 and Step S102 in the first embodiment.

FIG. 8 illustrates a sectional view of the quantum dot which is manufactured through the manufacturing method according to the third embodiment, and a target value of a band structure. In the third embodiment, a structure in which a ZnO_0.60S_0.40 core having a diameter of 2.0 nm is coated with the AlN shell having the thickness of 3.0 nm is set to be a target.

In the third embodiment, first, a ZnO_xS_1-x core layer is formed in the same order as in the first embodiment.

Next, the AlN shell layer is precipitated on the ZnO_xS_1- core layer. At this time, for example, a toluene solution which is obtained by dispersing ZnO_0.60S_0.40 nanoparticles (core particles) which are manufactured in the same order as in the first embodiment is used. In addition, the following operations and synthesis in the third embodiment are performed in a glove box by using a vacuum-dried (140° C.) glass products and equipment.

6 ml of the toluene solution in which the ZnO_0.60S_0.40 nanoparticles are dispersed, aluminum iodide which is a source of aluminum (171 mg, 0.41 mmol), sodium amide which is a source of nitrogen (500 mg, 12.8 mmol), hexadecanethiol (380 μl, 1.0 mmol) which is a capping agent, zinc stearate (379 mg, 0.6 mol), and aqueous solution (20 ml) containing the ZnO_0.60S_0.40 nanoparticles are put into a flask in which diphenyl ether (20 ml) is input as a solvent. A mixture obtained as above is heated until 100° C. at an inert gas atmosphere, and kept warm until a separating layer between water and other solvents is eliminated. When the separating layer is eliminated, the reaction solvent is heated up to 225° C., and maintains the temperature to be 225° C. for 60 minutes. The reaction container is naturally cooled to 100° C., and then maintained for an hour. With this, it is possible to perform the stabilization of the surface of the nanoparticle. Thereafter, butanol as an anticaking agent is added to the reaction solution which is cooled to room temperature and the reaction solution is left to stand for 10 hours so as to prevent the nanoparticles from being aggregated. The mixture is purified by repeatedly performing centrifugation (4000 rpm for 10 minutes) by alternately using dehydrated methanol in which the solvent (TOPO) is dissolved, and toluene which disperses the nanoparticles. As a result, unnecessary raw materials and the solvent are removed.

By going through such a procedure, it is possible to obtain a nanoparticle in which the shell layer which is formed of AlN is grown on a ZnO_0.60S_0.40 core layer.

The emission spectrum of the toluene solution in which ZnO_0.60S_0.40/AlN nanoparticles which are manufactured through the manufacturing method according to the third embodiment are dispersed is evaluated with a spectrophotometer. The emission spectrum is observed by using the excitation wavelength of 365 nm, and the emission spectrum having the half width of 45 nm is obtained.

The quantum dot ensemble (ZnO_0.60S_0.40/AlN nanoparticle ensemble) manufactured through the manufacturing method according to the third embodiment exhibits the same effect as that of the quantum dot ensemble manufactured through the manufacturing method according to the second embodiment, for example.

Note that, the shell layer is formed of the AlN in the third embodiment; however, it is not limited to the AlN. For example, an In_wAl_1-wN (0<w<1) shell may be employed. The configuration of the In_wAl_1-wN (0<w<1) shell will be described in a fifth embodiment.

FIG. 9 is a flow chart schematically illustrating the manufacturing method of the quantum dot ensemble according to the fourth embodiment. The quantum dots which are manufactured in the fourth embodiment are a type I core/shell type quantum dots (light emitting nanoparticles) having a structure in which a ternary In_ZGa_1-Zn (0<z<1) core formed of the group III-V semiconductor material is coated with a ternary ZnO_xS_1-x (0<x<1) shell. Type I is formed such that a material having a large band gap interposes a material having a small band gap, and the electrons and the holes are confined in the semiconductor material having the small band gap.

In the fourth embodiment, first, an In_zGa_1-zN nanoparticle base material is synthesized (Step S401). Next, the In_zGa_1-zN nanoparticle base material which is synthesized in Step S401 is etched through the selective optical etching (Step S402), and an In_zGa_1-zN core layer is formed. Further, a ZnO_xS_1-x layer is precipitated on the In_zGa_1-zN core layer which is formed in Step S402 (Step S403). In addition, the ZnO_xS_1-x layer which is precipitated in Step S403 is etched through the selective optical etching (Step S404), the ZnO_xS_1-x shell layer is formed on the In_zGa_1-zN core layer. Step S401 and Step S403 in the fourth embodiment are a step corresponding to Step S101 in the first embodiment, and Step S402 and Step S404 are a step corresponding to S102 in the first embodiment.

FIG. 10 illustrates a sectional view of the quantum dot manufactured through the manufacturing method according to the fourth embodiment, and a target value of a band structure. In the fourth embodiment, a structure in which an In_0.80Ga_0.20N core having a diameter of 1.5 nm is coated with a ZnO_0.05S_0.95 shell having the thickness of 3.0 nm is set to be a target.

First, a preparing step (Step S401) of the In_0.80Ga_0.20N nanoparticle base material will be described. In addition, the following operations and synthesis in the fourth embodiment are performed in a glove box by using a vacuum-dried (140° C.) glass products and equipment.

Gallium iodide (54 mg, 0.12 mmol) which is a source of gallium, indium iodide (220 mg, 0.48 mmol) which is a source of indium, sodium amide (500 mg, 12.8 mmol) which is a source of nitrogen, hexadecanethiol (380 μl, 1.0 mmol) which is a capping agent, and zinc stearate (379 mg, 0.6 mol) are put into a flask in which diphenyl ether (20 ml) is input as a solvent. The mixed solution is rapidly heated up to 225° C., and maintained at 225° C. for 60 minutes. Thereafter, the reaction container is naturally cooled to 100° C., then maintained for an hour. With this, it is possible to perform the stabilization of the surface of the nanoparticle. Thereafter, butanol as an anticaking agent is added to the reaction solution which is cooled to room temperature and the reaction solution is stirred for 10 hours so as to prevent the nanoparticles from being aggregated. The mixture is purified by repeatedly performing centrifugation (4000 rpm for 10 minutes) by alternately using dehydrated methanol in which the solvent (TOPO) is dissolved, and toluene which disperses the nanoparticles. As a result, unnecessary raw materials and the solvent are removed. By going through such a procedure, it is possible to obtain the In_0.80Ga_0.20N nanoparticle base material.

The In_0.80Ga_0.20N nanoparticle base material which is synthesized in Step S401 is in a state of being dispersed in the methanol. Here, the methanol is vaporized so as to concentrate the nanoparticles. At this time, if the methanol is completely vaporized, the nanoparticles are aggregated, and therefore, it is preferable that the methanol slightly remains. Ultra pure water which is an optical etching liquid is added to the methanol and a solution of nanoparticle. The mixture is kept at 25° C., and is bubbled with oxygen for 5 minutes.

After being bubbled, the mixture is moved to the sealed container, and then the etching liquid is irradiated with the light having the light emitting wavelength of 405 nm (3.06 eV) and a half width of 6 nm, which is the light having a wavelength which is sufficiently shorter than an absorption edge wavelength of the In_0.80Ga_0.20N nanoparticle base material (Step S402). The mercury lamp is used as a light source, and the light emitted from the mercury lamp is used by being separated with a monochromator. Due to the variations in the mixed crystal composition and the particle size, the In_0.80Ga_0.20N nanoparticle base material, in which the variation occurs in the absorption edge wavelength of the band gap, absorbs the light such that the light dissolution reaction occurs, the surface of the particle is dissolved in a light dissolving liquid, and thus the diameter of the particle is gradually decreased. For this reason, as the etching is progressed, the absorption edge wavelength is shifted to the short wavelength side. Until the absorption edge wavelength of the In_0.80Ga_0.20N nanoparticle base material becomes shorter than the wavelength of the irradiation light, and the light dissolution reaction is stopped, the In_0.80Ga_0.20N nanoparticle base material is constantly irradiated with the light. The light irradiation is performed, for example, for 20 hours.

A plurality of In_zGa_1-zN nanoparticles (core layers) which are formed in Step S402 are, for example, nanoparticles (quantum dots) having the light emitting wavelengths which are the same as each other, even with the mixed crystal compositions and the distribution of the size.

Thereafter, an aqueous solution in which the quantum dots are dispersed is freeze-dried so as to make the quantum dots in a powder state, and thereby the obtained powder is dispersed into octylamine by using ultrasonic dispersing machine.

Subsequently, a step of precipitating the ZnO_0.05S_0.95 shell layer on the In_0.80Ga_0.20N core layer (Step S403) will be described.

A quartz flask (300 cc) is prepared as a reaction container. A port, through which an inert gas can be replaced with air in the flask, and a dedicated port, into which a reactive precursor can be injected, are attached to the flask in addition to an outlet. TOPO and HDA which are reaction solvents are put into the flask, are heated at 300° C. in an inert gas atmosphere, and then dissolved. For example, 8 g of TOPO, 4 g of HDA, and argon (Ar) as the inert gas are used. The above materials are stirred with a stirrer such that heating unevenness is hardly caused.

Next, syringes which are respectively filled with, as the reactive precursor, diethyl zinc (Zn(C₂H₅)₂) sealed by the inert gas (for example, Ar), octylamine (C₈H₁₇NH₂) into which is oxygen is entrapped, bis(trimethylsilyl) sulfide, and a solution containing the In_0.80Ga_0.20N nanoparticle are respectively prepared. The oxygen is entrapped into octylamine (C₈H₁₇NH₂) by bubbling the oxygen for 2 minutes. Diethyl zinc (Zn(C₂H₅)₂), octylamine (C₈H₁₇NH₂) in which the oxygen is bubbled, and the bis(trimethylsilyl) sulfide are respectively adjusted to be 4.0 mmol, 0.2 mmol, and 3.8 mmol. In addition, 2.0 ml of solution containing the In_0.80Ga_0.20N nanoparticle is prepared.

When the reaction solvent has reached 225° C. that is a reaction temperature, the reactive precursor is added dropwise from each of the syringes. A droplet is added dropwise every 30 seconds. After adding dropwise all droplets of the reactive precursor, the flask is cooled to 100° C., and is incubated for an hour so as to be annealed. With this, it is possible to stabilize the surface of the nanoparticle. Thereafter, butanol as an anticaking agent is added to the reaction solution which is cooled to room temperature and the reaction solution is left to stand for 10 hours so as to prevent the nanoparticles from being aggregated. The mixture is purified by repeatedly performing centrifugation (4000 rpm for 10 minutes) by alternately using dehydrated methanol in which the solvent (TOPO) is dissolved, and toluene which disperses the nanoparticles. As a result, unnecessary raw materials and the solvent are removed. In this way, the In_0.80Ga_0.20N/ZnO_0.05S_0.95 nanoparticle is formed.

In_0.80Ga_0.20N/ZnO_0.05S_0.95 nanoparticle is in a state of being dispersed in the methanol. Here, the methanol is vaporized so as to concentrate the nanoparticles. At this time, if the methanol is completely vaporized, the nanoparticles are aggregated, and therefore, it is preferable that the methanol slightly remains. Ultra pure water which is an optical etching liquid is added to the methanol and a solution of nanoparticle. The mixture is kept at 25° C., and is bubbled with oxygen for 5 minutes.

After being bubbled, the mixture is moved to the sealed container, and then the etching liquid is irradiated with the light having the light emitting wavelength of 405 nm (3.06 eV) and a half width of 6 nm, which is the light having a wavelength which is sufficiently shorter than an absorption edge wavelength of ZnO_0.05S_0.95 layer (Step S404). The mercury lamp is used as a light source, and the light emitted from the mercury lamp is used by being separated with a monochromator. Due to the variations in the mixed crystal composition and the particle size, the ZnO_0.05S_0.95 layer, in which the variation occurs in the absorption edge wavelength of the band gap, absorbs the light such that the light dissolution reaction occurs, the surface of the particle is dissolved in a light dissolving liquid, and thus the ZnO_0.05S_0.95 layer becomes gradually thinner. For this reason, as the etching is progressed, the absorption edge wavelength is shifted to the short wavelength side. Until the absorption edge wavelength of the ZnO_0.05S_0.95 layer becomes shorter than the wavelength of the irradiation light, and the light dissolution reaction is stopped, the ZnO_0.05S_0.95 layer is constantly irradiated with the light. The light irradiation is performed, for example, for 20 hours.

The In_0.80Ga_0.20N/ZnO_0.05S_0.95 nanoparticles which are manufactured through the manufacturing method according to the fourth embodiment are, for example, nanoparticles (quantum dots) having the light emitting wavelengths which are the same as each other, even with the mixed crystal compositions and the distribution of the size.

The emission spectrum of the toluene solution in which the In_0.80Ga_0.20N/ZnO_0.05S_0.95 nanoparticles which are manufactured through the manufacturing method according to the fourth embodiment are dispersed is evaluated by using the spectrophotometer. The emission spectrum having a half width of 45 nm is obtained by observing the emission spectrum by using the excitation wavelength of 365 nm.

The quantum dot ensemble (an In_0.80Ga_0.20N/ZnO_0.05S_0.95 nanoparticle ensemble) which is manufactured through the manufacturing method according to the fourth embodiment has the same effect as that of the quantum dot ensemble manufactured through the manufacturing method according to the second embodiment.

FIG. 11 is a flow chart schematically illustrating the manufacturing method of the quantum dot ensemble according to the fifth embodiment. The quantum dots manufactured in the fifth embodiment are a type II core/shell type quantum dots (light emitting nanoparticles) which has a structure in which a ternary ZnO_xS_1-x (0<x<1) core formed of a group II-VI semiconductor material is coated with a ternary In_wAl_1-wN (0<w<1) shell formed of a group III-V semiconductor material.

In the fifth embodiment, first, a ZnO_xS_1-x nanoparticle base material is synthesized (Step S501). Next, the ZnO_xS_1-x nanoparticle base material which is synthesized in Step S501 is etched through the selective optical etching (Step S502), and a ZnO_xS_1-x core layer is formed. Further, an In_wAl_1-wN layer is precipitated on the ZnO_xS_1-x core layer formed in Step S502 (Step S503). In addition, the In_wAl_1-wN layer which is precipitated in Step S503 is etched through the selective optical etching (Step S504), the In_wAl_1-wN shell layer is formed on the ZnO_xS_1-x core layer. Step S501 and Step S503 in the fifth embodiment are a step corresponding to Step S101 in the first embodiment, and Step S502 and Step S504 are a step corresponding to Step S102 in the first embodiment.

FIG. 12 illustrates a sectional view of the quantum dot manufactured through the manufacturing method according to the fifth embodiment, and a target value of a band structure. In the fifth embodiment, a structure in which a ZnO_0.75S_0.25 core having a diameter of 1.0 nm is coated with the In_0.67Al_0.33N shell having the thickness of 3.0 nm is set to be a target.

First, a synthesizing step (Step S501) of the ZnO_0.75S_0.25 nanoparticle base material will be described.

A quartz flask (300 cc) is prepared as a reaction container. A port, through which an inert gas can be replaced with air in the flask, and a dedicated port, into which a reactive precursor can be injected, are attached to in the flask in addition to an outlet. TOPO and HDA which are reaction solvents are put into the flask, are heated at 300° C. in an inert gas atmosphere, and then dissolved. For example, 8 g of TOPO, 4 g of HDA, and argon (Ar) as the inert gas are used. The above materials are stirred with a stirrer such that heating unevenness is hardly caused.

Next, syringes which are respectively filled with, as the reactive precursor, diethyl zinc (Zn(C₂H₅)₂) sealed by the inert gas (for example, Ar), octylamine (C₈H₁₇NH₂) which is bubbled with oxygen, and bis(trimethylsilyl) and sulfide (thiobis) are respectively prepared. Diethyl zinc (Zn(C₂H₅)₂), octylamine (C₈H₁₇NH₂) to which the oxygen is bonded, and bis(trimethylsilyl) sulfide (thiobis) are respectively adjusted to be 4.0 mmol, 3.0 mmol, and 1.0 mmol. By adjusting as described above, a ZnO_0.75S_0.25 mixed crystal nanoparticle is synthesized in the fifth embodiment. Meanwhile, in order to synthesize a ZnO_xS_1-x mixed crystal nanoparticle having a different O composition x, the ratio of the materials of the above reaction precursor can be appropriately changed.

When the reaction solvent has reached a reaction temperature, the reactive precursor is immediately put into the flask by using each syringe. A nucleus crystal of ZnO_xS_1-x is generated by thermal decomposition of the reactive precursor. If the reactive precursor is left to stand as it is, most of the reactive precursors are used to form the nucleus, and different sizes of nuclei are generated over time, and thus the temperature of the flask is rapidly cooled to 200° C. immediately after injecting the reactive precursor. Thereafter, a growth of ZnO_xS_1-x is performed in such a manner that the reaction solvent is heated again up to 240° C., and kept at a certain temperature for 20 minutes.

The flask is naturally cooled to 100° C., and then left to stand for one hour. With this, it is possible to stabilize the surface of the nanoparticle. Thereafter, butanol as an anticaking agent is added to the reaction solution which is cooled to room temperature and the reaction solution is kept for 10 hours so as to prevent the nanoparticles from being aggregated. The mixture is purified by repeatedly performing centrifugation (4000 rpm for 10 minutes) by alternately using dehydrated methanol in which the solvent (TOPO) is dissolved, and toluene which disperses the nanoparticles. As a result, unnecessary raw materials and the solvent are removed.

As described above, the ZnO_0.75S_0.25 nanoparticle base material is synthesized. However, in the ensemble of the nanoparticle base materials which are synthesized in Step S501, variations in the mixed crystal composition and the particle size occur for each particle.

While this variations exist, the process proceeds to an In_wAl_1-wN shell layer forming step (Step S503), and the quantum effect is changed for each ZnO_0.75S_0.25 nanoparticle, which results in the variation in the light emitting wavelength. In Step S502, the selective optical etching is performed so as to uniformize band gaps of the entire ZnO_0.75S_0.25 nanoparticles.

The ZnO_0.75S_0.25 nanoparticle base material is synthesized in Step S501 in a state of being dispersed in the methanol. Here, the methanol is vaporized so as to concentrate the nanoparticles. At this time, if the methanol is completely vaporized, the nanoparticles are aggregated, and therefore, it is preferable that the methanol slightly remains. Ultra pure water which is an optical etching liquid is added to the methanol and a solution of nanoparticle. The mixture is kept at 25° C., and is bubbled with oxygen for 5 minutes.

After being bubbled, the mixture is moved to the sealed container, and then the etching liquid is irradiated with the light having the light emitting wavelength of 405 nm (3.06 eV) and a half width of 6 nm, which is the light having a wavelength which is sufficiently shorter than an absorption edge wavelength of the ZnO_0.75S_0.25 nanoparticle. The mercury lamp is used as a light source, and the light emitted from the mercury lamp is used by being separated with a monochromator.

Due to the variations in the mixed crystal composition and the particle size, the ZnO_0.75S_0.25 nanoparticle, in which the variation occurs in the absorption edge wavelength of the band gap, absorbs the light such that the light dissolution reaction occurs, the surface of the particle is dissolved in a light dissolving liquid, and thus the diameter of the particle is gradually decreased. For this reason, as the etching is progressed, the absorption edge wavelength is shifted to the short wavelength side. Until the absorption edge wavelength of the ZnO_0.75S_0.25 becomes shorter than the wavelength of the irradiation light, and the light dissolution reaction is stopped, the ZnO_0.75S_0.25 is constantly irradiated with the light. The light irradiation is performed, for example, for 20 hours.

In Step S502, for example, a plurality of ZnO_0.75S_0.25 nanoparticles (ZnO_0.75S_0.25 core layers) which have the light emitting wavelengths which are the same as each other are formed, even with the mixed crystal compositions and the distribution of the size.

Subsequently, a step of precipitating the In_0.67Al_0.33N layer on the ZnO_0.75S_0.25 core layer (Step S503) will be described.

An organic solvent in which the ZnO_0.75S_0.25 nanoparticles (51.7 mg, 0.6 mmol) formed in Step S502 are dispersed, aluminum iodide (80 mg, 0.20 mmol) which is a source of aluminum, indium iodide (185 mg, 0.40 mmol) which is a source of indium, hexadecanethiol (380 μl, 1.0 mmol) which is a capping agent, and zinc stearate (379 mg, 0.6 mol) are put into a flask in which diphenyl ether (20 ml) is input as a solvent. The mixed solution is rapidly heated at 225° C., and maintained at 225° C. for an hour. Thereafter, the reaction container is naturally cooled to 100° C., then maintained for an hour. With this, it is possible to stabilize the surface of the nanoparticle. Thereafter, butanol as an anticaking agent is added to the reaction solution which is cooled to room temperature and the reaction solution is left to stand for 10 hours so as to prevent the nanoparticles from being aggregated. The mixture is purified by repeatedly performing centrifugation (4000 rpm for 10 minutes) by alternately using dehydrated methanol in which the solvent (TOPO) is dissolved, and toluene which disperses the nanoparticles. As a result, unnecessary raw materials and the solvent are removed. By going through such a procedure, it is possible to obtain a nanoparticle in which a shell layer which is formed of an In_0.67Al_0.33N is grown on a ZnO_0.75S_0.25 core layer.

The ZnO_0.75S_0.25/In_0.67Al_0.33N nanoparticle (base material) is synthesized until Step S503, variations in the mixed crystal composition and the film thickness of the In_0.67Al_0.33N layer occur to some extent due to the nanoparticle. If the variations exist, the band structure of the shell layer is varied, and thereby the light emitting wavelength from the nanoparticle broadly spreads, which is a problem. In this regard, in Step S504, the optical etching is performed on the In_0.67Al_0.33N layer of the ZnO_0.75S_0.25/In_0.67Al_0.33N nanoparticle such that the quantum effect is uniformized on the In_0.67Al_0.33N layer.

The ZnO_0.75S_0.25/In_0.67Al_0.33N nanoparticle (base material) is formed in Step S503 in a state of being dispersed in the methanol. Here, the methanol is vaporized so as to concentrate the nanoparticles. At this time, if the methanol is completely vaporized, the nanoparticles are aggregated, and therefore, it is preferable that the methanol slightly remains. Ultra pure water which is an optical etching liquid is added to the methanol and a solution of nanoparticle. The mixture is kept at 25° C., and is bubbled with oxygen for 5 minutes.

After being bubbled, the mixture is moved to the sealed container, and then the etching liquid is irradiated with the light having the light emitting wavelength of 405 nm (3.06 eV) and a half width of 6 nm, which is the light having a wavelength which is sufficiently shorter than an absorption edge wavelength of the In_0.67Al_0.33N layer. The mercury lamp is used as a light source, and the light emitted from the mercury lamp is used by being separated with a monochromator.

Due to the variations in the mixed crystal composition and the particle size, the In_0.67Al_0.33N layer, in which the variation occurs in the absorption edge wavelength of the band gap, absorbs the light such that the light dissolution reaction occurs, the surface of the particle is dissolved in a light dissolving liquid, and thus the In_0.67Al_0.33N layer becomes gradually thinner. For this reason, as the etching is progressed, the absorption edge wavelength is shifted to the short wavelength side. Until the absorption edge wavelength of the In_0.67Al_0.33N layer becomes shorter than the wavelength of the irradiation light, and the light dissolution reaction is stopped, the In_0.67Al_0.33N layer is constantly irradiated with the light. The light irradiation is performed, for example, for 20 hours.

The ZnO_0.75S_0.25/In_0.67Al_0.33N nanoparticles which are manufactured through the manufacturing method according to the fifth embodiment are, for example, nanoparticles having the light emitting wavelengths which are the same as each other, even with the mixed crystal compositions and the distribution of the size.

The quantum dot (the ZnO_0.75S_0.25/In_0.67Al_0.33N nanoparticle) ensemble which is manufactured through the manufacturing method according to the fifth embodiment has the same effect as that of the quantum dot ensemble manufactured through the manufacturing method according to the second embodiment.

As described, the invention is described with reference to the embodiments; however, the invention is not limited to the embodiments.

For example, in embodiments, as an example of using the group II-VI compound semiconductor, the ternary ZnO_xS_1-x nanoparticle is exemplified; however, the examples is not limited thereto. For example, it is possible to use quantum dots formed by using A_xB_1-xC_yD_1-y (0≦x≦1, 0≦y≦1, A and B are elements selected from the group consisting of Zn and Mg, and C and D are elements selected from the group consisting of O, S, Se, and Te) which consists of three or more elements.

The quantum dots having different mixed crystal compositions are mixed in the quantum dot ensemble. For example, the quantum dots in which x is varied by equal to or greater than 0.05, or quantum dots in which y is varied by equal to or greater than 0.05 are mixed. The reason for this is that the variation in the composition is large in the A_xB_1-xC_yD_1-y quantum dot ensemble which is formed of three or more elements, and thus it is very difficult to adjust the variations in x and y to be lower than 0.05 (if the variations of x and y are less than 0.05, the half width of the emission spectrum of the quantum dot ensemble is, for example, less than 50 nm).

However, the A_xB_1-xC_yD_1-y quantum dot ensemble according to the present application does not have the wide emission spectrum derived from the variations in the mixed crystal composition and the size of the quantum dots, but the band gap of the quantum dots is, for example, uniformized, and thus the half width of the emission spectrum is narrowed to be less than 50 nm. This is resulted from the manufacture of the quantum dot ensemble through the selective optical etching, for example.

Meanwhile, the quantum dots may have the core/shell structure or may not. For example, the core layer and the shell layer may have a core/shell structure which is formed of a type II bonding material (a material having a type II quantum structure) through the transition between adjacent layers or between bands, and thus the shell layer may be formed of the A_xB_1-xC_yD_1-y. In a case of the core/shell structure, for example, the quantum dots having different mixed crystal composition of the shell layer (variation in x which is equal to or greater than 0.05, or variation in y which is equal to or greater than 0.05) are mixed in the quantum dot ensemble; however, the energy level of the shell layer is not varied due to the variations in the mixed crystal composition and the size, for example, as a result that the shell layer is subjected to the selective optical etching, the band gap energy (the band gap energy of the shell layer confining the core layer) of the shell layer of the quantum dots is uniformized, for example, to be constant, without depending on the variation in the mixed crystal composition.

In addition, in the embodiment, as an example of using the group III-V compound semiconductor, the ternary In_zGa_1-zN nanoparticle and the In_wAl_1-wN nanoparticle are exemplified; however, the examples are not limited thereto. For example, it is possible to use quantum dots formed by using Al_xGa_yIn_zN (0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z=1).

Even in the quantum dot ensemble, the quantum dots having the different mixed crystal compositions are mixed. For example, quantum dots in which at least one of x, y, and z, is varied by equal to or greater than 0.05, are mixed. The reason for this is that the variation in the composition is large in the Al_xGa_yIn_zN quantum dot ensemble which is formed of three or more elements, and thus it is very difficult to adjust the variations in x, y, and z to be lower than 0.05 (if the variations of x, y, and z are less than 0.05, the half width of the emission spectrum of the quantum dot ensemble is, for example, less than 50 nm).

However, the Al_xGa_yIn_zN quantum dot ensemble according to the present application does not have the wide emission spectrum derived from the variations in the mixed crystal composition and the size of the quantum dots, but the band gap of the quantum dots is, for example, uniformized, and thus the half width of the emission spectrum is narrowed to be less than 50 nm. This is resulted from the manufacture of the quantum dot ensemble through the selective optical etching, for example.

Meanwhile, the quantum dots may have the core/shell structure or may not. For example, the core layer and the shell layer may have a core/shell structure which is formed of a type II bonding material (a material having a type II quantum structure) through the transition between adjacent layers or between bands, and thus the shell layer may be formed of the Al_xGa_yIn_zN. In a case of the core/shell structure, for example, the quantum dots having different mixed crystal composition of the shell layer (a variation in at least one of x, y, and z, the variation which is equal to or greater than 0.05) are mixed in the quantum dot ensemble; however, the energy level of the shell layer is not varied due to the variations in the mixed crystal composition and the size, for example, as a result that the shell layer is subjected to the selective optical etching, the band gap energy (the band gap energy of the shell layer confining the core layer) of the shell layer of the quantum dots is uniformized, for example, to be constant, without depending on the variation in the mixed crystal composition.

Note that, the quantum dot having the core/shell structure in which the surface of the quantum dot is coated with the group II-VI semiconductor material, or the group III-V semiconductor material is described in the embodiment; however, in the quantum dot of the core/shell structure, the core layer and the shell layer do not necessarily satisfy a lattice matching condition. When it comes to obtaining a quantum dot having a good crystallinity, it is preferable to satisfy each lattice matching condition. The matching range is set that a difference of lattice constants is within ±1.0%. The reason for this is that if the matching range is within the above range, there is substantially no influence on the characteristics, with which the band gap is involved, as the semiconductor, but if the matching range is beyond ±1%, the characteristics is remarkably deteriorated due to the deterioration of the crystallinity.

In addition, the core/shell structure (a stacking layer structure) is not limited to two layers; for example, it can be formed of three layers or more.

Further, the shape of the quantum dot is not particularly limited, as long as the average particle size is, for example, equal to or less than 20 nm. For example, it is possible to take a shape such as a spherical shape, a polyhedral shape, a flat plate shape.

The fact that other various modifications, improvements, combinations, and the like can be performed will be apparent to those skilled in the art.

For example, it is possible to manufacture a phosphor having a uniform light emission wavelength in a narrow band, and solar cell having uniform characteristics.

Claims

1. A manufacturing method of a quantum dot ensemble including quantum dots each having a composition represented by a formula AxB1-xCyD1-y (0≦x≦1, 0≦y≦1, A and B are elements selected from the group consisting of Zn and Mg, and C and D are elements selected from the group consisting of O, S, Se, and Te), the quantum dots forming the ensemble in a mixed manner, comprising: (a) step of preparing a plurality of quantum dots each having a composition represented by a formula AxB1-xCyD1-y (0≦x≦1, 0≦y≦1, A and B are elements selected from the group consisting of Zn and Mg, and C and D are elements selected from the group consisting of O, S, Se, and Te); and(b) step of uniformizing band gap energy of the plurality of quantum dots by optically etching the plurality of quantum dots which are prepared in the step (a),wherein in the step (a), target values of x and y in the formula AxB1-xCyD1-y are set in such a manner that band gap energy of AxB1-xCyD1-y attains an approximately minimal value, andwherein in the step (b), the quantum dot ensemble including the quantum dots in which at least one of x and y in the formula AxB1-xCyD1-y is varied by equal to or greater than 0.05 is processed, the quantum dot ensemble having an emission spectrum of which the half-width is less than 50 nm is processed, the quantum dot ensemble having a band gap energy which is greater than a band gap energy of a bulk mixed crystal having a same composition as the composition of each of the plurality of quantum dots included in the quantum dot ensemble is processed, and the plurality of quantum dots are processed such that the average particle size thereof is equal to or less than 20 nm.

2. The manufacturing method of a quantum dot ensemble, according to claim 1, wherein in the step (a), the plurality of quantum dots of which sizes are larger than 10 nm are prepared.

3. The manufacturing method of a quantum dot ensemble, according to claim 1, wherein in the step (a), the quantum dots are prepared to include a core and a shell layer that has a composition represented by the formula AxB1-xCyD1-y on the core, andwherein in the step (b), a band gap energy of the shell layer of the quantum dots is constant.