Quartz resonator, quartz resonator package, and quartz oscillator

Abstract

To provide a tuning fork type quartz resonator having a low CI value and a quartz resonator package provided with the quartz resonator. A silicon material lower in specific gravity and stiffness than those of conventionally used gold (Au) is used as an electrode material for an electrode pattern such as excitation electrodes for making the tuning fork type quartz resonator generate tuning fork oscillation. By this structure, the quartz resonator is made easier to oscillate so that the oscillation loss (CI value) can be lowered during conversion of electric energy into tuning fork oscillation.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagrammatic plan view showing an example of the tuning fork type quartz resonator;

FIG. 2 is a plan view showing an example of the tuning fork type quartz resonator relating to the present embodiment;

FIG. 3 is a schematic view diagrammatically showing an example of the tuning fork type quartz resonator relating to the present embodiment;

FIG. 4 is a plan view showing an example of the prototype of a quartz resonator manufactured in a manufacturing process of the tuning fork type quartz resonator relating to the present embodiment; and

FIGS. 5A and 5B are a vertical cross-sectional view and a back view showing an example of a quartz resonator package which houses the tuning fork type quartz resonator relating to the present embodiment.

Claims

1. A quartz resonator having electrode patterns including an excitation electrode and a pull out electrode on both front and back surfaces of a quartz crystal piece from which two vibrating arms are extending from a base in a tuning fork shape, wherein at least the excitation electrode out of said electrode patterns is made from a silicon material consisting of polysilicon or amorphous silicon.

2. The quartz resonator according to claim 1, wherein said silicon material is a p-type or n-type to which impurities are doped.

3. The quarts resonator according to claim 1, wherein said silicon material is deposited on said vibrating arm at a temperature lower than the Curie point of the quartz crystal making up the quartz resonator.

4. The quartz resonator according to claim 1, wherein a frequency adjusting metal film having greater specific gravity than that of said silicon material is formed at the front-end portion of said vibrating arm.

5. A quartz resonator package, comprising: a package;the quartz resonator according to claim 1 provided in the package; andan electrode provided outside said package, and electrically connected to the electrode pattern of said quartz resonator.

6. A quartz oscillator, comprising: the quartz resonator according to claim 1.