Claims
- 1. A lithography system for providing interconnections of integrated circuits on a substrate, comprising:a laser system including a high reflector and an output coupler defining an oscillator cavity that produces an output beam, a gain medium with a doping level of less than 0.5% and a mode locking device positioned in the oscillator cavity, and a diode pump source producing a pump beam incident on the gain medium; a processor that stores a representation of interconnections for the integrated circuit; and an output beam directing apparatus coupled to the processor that directs the output beam to the substrate to form the interconnections.
- 2. The lithography system of claim 1, wherein the output beam directing apparatus includes a scanner.
- 3. The lithography system of claim 1, wherein the output beam directing apparatus includes a rotatable reflector.
- 4. The lithography system of claim 1, wherein the output beam directing apparatus includes means for moving the substrate.
- 5. The lithography system of claim 1, wherein the gain medium is Nd:YVO4, Nd:YAG, Nd:YLF, Nd:Glass, Ti:sapphire, Cr:YAG, Cr:Forsterite, Yb:YAG and Yb:glass.
- 6. The lithography system of claim 1, wherein the gain medium is Nd:YVO4.
- 7. The lithography system of claim 1, wherein a second harmonic generator is made of LBO.
- 8. The lithography system of claim 1, wherein the diode pump source is fiber coupled.
- 9. The lithography system of claim 1, wherein the mode locking device is a multiple quantum well saturable absorber.
- 10. The lithography system of claim 1, wherein the mode locking device is a non-linear mirror mode locker.
- 11. The lithography system of claim 1, wherein the mode locking device is a polarization coupled mode locker.
- 12. The lithography system of claim 1, wherein the mode locking device is an acousto-optic modulator.
- 13. The lithography system of claim 1, wherein the output beam has a power of 10 watts or greater.
- 14. The lithography system of claim 13, wherein the output beam is pulsed at 4-10 picoseconds.
- 15. The lithography system of claim 14, wherein the output beam has a repetition rate of 80-120 MHz.
- 16. The lithography system of claim 1, further comprising:a second harmonic generator coupled to the oscillator cavity.
- 17. The lithography system of claim 16, further comprising:a third harmonic generator coupled to second harmonic generator.
- 18. The lithography system of claim 17, wherein the third harmonic generator is made of type II LBO.
- 19. The lithography system of claim 16, further comprising:a fourth harmonic generator coupled to the second harmonic generator.
- 20. The lithography system of claim 19, wherein the fourth harmonic generator is made of type I BBO.
CROSS REFERENCE TO RELATED APPLICATIONS
This application cross-references U.S. patent application Ser. No. 09/322,803, filed May 27, 1999 entitled “Laser Writing Method and Apparatus”, (issued as U.S. Pat. No. 6,246,706 B1); and U.S. patent application Ser. No. 09/321,499, filed May 27, 1999, entitled “Method and Apparatus to Detect a Flaw in a Surface of an Article”, which applications are incorporated herein by reference.
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