Embodiments of the present invention relate to lasers and, more particularly, to monitoring and controlling a laser in real time.
Lasers are used in a wide variety of applications. In particular, lasers are integral components in optical communication systems where a beam modulated with vast amounts of information may be communicated great distances at the speed of light over optical fibers as well as short reach distances such as from chip-to-chip in a computing environment.
Of particular interest is the so-called vertical cavity surface emitting laser (VCSEL). As the name implies, this type of laser is a semiconductor micro-laser diode that emits light in a coherent beam orthogonal or “vertical” to the surface of a fabricated wafer. VCSELs are compact, relatively inexpensive to fabricate in mass quantities, and may offer advantages over edge emitting lasers which currently comprise the majority of the lasers used in today's optical communication systems. The more traditional type edge emitting laser diodes emit coherent light parallel to the semiconductor junction layer. In contrast, VCSELs emit a coherent beam perpendicular to the boundaries between the semiconductor junction layers. Among other advantages, this tends to make it easier to couple the light beam to an optical fiber.
VCSELs may be efficiently fabricated on wafers using standard microelectronic fabrication processes and, as a result, may be integrated on-board with other components. VCSELs may be manufactured using, for example, aluminum gallium arsenide (AlGaAs), gallium arsenide (GaAs), indium gallium arsenide nitride (InGaAsN), or similarly suited materials. VCSELS have been successfully manufactured in 850 nm, 1310 nm and 1550 nm ranges. This allows for a wide variety of fiber optic applications ranging from short reach applications to long haul data communications. VCSELs are promising to advance optical communication systems by providing a fast, inexpensive, energy efficient, and more reliable source of laser beam generation.
Optical transceivers using VCSELs operating at line rates of 10 gigabits/second (Gb/s) have matured rapidly over the last few years and are currently available in a wide variety of form factors, each addressing a range of link parameters and protocols. These form factors are the result of Multi-Source Agreements (MSAs) that define common mechanical dimensions and electrical interfaces. The first MSA was the 300-pin MSA in 2000, followed by XENPAK, X2/XPAK, and XFP. Each of the transceivers defined by the MSAs has unique advantages that fit the needs of various systems, supporting different protocols, fiber reaches, and power dissipation levels.
Temperature affects the performance of VCSELs. Nevertheless, optical transceivers are expected to operate across a wide ambient temperature range. For example, some of the MSAs may call for the transceiver to operate in conditions as cold as −25° Celsius to as hot as 85° Celsius. In optical transceiver circuits, one common problem encountered may be the change of laser ER (extinction ratio) with temperature changes. When electrons at energy level N1 are moved to higher energy level, N2, energy is absorbed. When the electrons at energy level N2 drop to level N1, light is emitted. The ratio of electron quantity n2 at energy level N2 to a total electron quantity (n1+n2) at energy levels N1 and N2 may be called the excitation ratio (ER).
VCSELs have the ER characteristics as shown in
One way to determine the amount by which to modify drive current for a given temperature change may be to record the laser driving conditions in a memory (e.g. an EEPROM) for different temperature conditions. A driver determines the level of current to provide by referencing the look-up table in the memory to thus to compensate for the drop in slope efficiency. However, in real-world manufacturing, the manufacturer may only have one look up table to fit all different laser characteristics, which may vary due to operating conditions, age, and manufacturing variances. Hence, a laser using a “one size fits all” look-up table to determine operating conditions may tend to be inaccurate.
Modern Small Form Factor (SFF) Optical Transceivers provide high performance integrated duplex data links for bi-directional communication over multimode optical fiber.
Referring to
The insulating header 204 includes an upper surface 318, a lower surface 320, and four substantially flat sidewalls 322 (two of which are shown) extending downwardly from the upper surface 318. The thickness of the header 204 may be approximately 1 mm. Of course, it should be understood that the insulating header 204 may be thicker or thinner as desired. The header 204 may be configured as a multilayer substrate having a plurality of levels. Multiple metal layers may be provided at each of the plurality of levels, and joined together (e.g., laminated).
Various devices may be housed within the TO-can 202. For example, an active optical device 321, such as a VCSEL 321, and its associated integrated circuitry 323, other optical devices 325, such as a photodiode 325, and various other electrical components 327 and 329 may be located within an inner region of the metal sealing member 314.
At least one electrical lead 206 may be included adapted to communicate signals from the optoelectronic and/or electrical components housed inside the package TO-can 202 to components located external to the TO-can 202 on a printed circuit board, for example. The leads 206 may be circular or rectangular in cross-section, as shown. Alternatively, the header 204 may be operatively coupled to a printed circuit board using solder connections such as, for example, ball grid array connections and/or a flex circuit.
The cover 316, may be formed of Kovar™ or other suitable metal, may be hermetically sealed to the metal sealing member 314 to contain and fully enclose the optoelectronic and electrical components mounted to the upper surface 318 of the header 204, and to thereby seal off the TO-can 202. Use of such a hermetically sealed cover 216 acts to keep out moisture, corrosion, and ambient air to protect the generally delicate optoelectronic and electrical components therein.
The cover 316 includes a transparent portion 214 such as, for example, a flat glass window, ball lens, aspherical lens, or GRIN lens. The optoelectronic components, such as the VCSEL 325, are positioned within the TO-can 202 in a manner such that light is able to pass to or from them through the transparent portion 214. Typically, the transparent portion 214 is formed of glass, ceramic, or plastic. To avoid effecting the optoelectronic and electrical components housed within the TO-can 202, the transparent portion 214 of the cover 316 may be provided with an antireflection coating to reduce optical loss and back-reflection.
In one embodiment, a digital-to-analog current source (DAC) 504 may be used to provide a drive current to the VCSEL 231. DAC current sources are generally discussed for example in U.S. Pat. No. 5,001,484 to Weiss. The DAC current source 504 may typically be constructed of an array of current source transistors that produce output currents of weighted values that represent bits in a binary word or code 510. High resolution DACs typically employ weighted current sources in which the ratio of the most significant current bit IMSB, to the least significant current bit, ILSB, ranges from 64:1, in the case of an six-bit DAC, to as high as 32,768:1, in the case of a sixteen-bit DAC. In general terms, IMSB/ILSB=2(N−1), where N is the number of bits.
In one embodiment, as shown in
Referring to
Knowing real time excitation ratio slope efficiency then allows the microcontroller to adjust the current code to correspondingly adjust the drive current 508 driving the VCSEL 321 to maintain a substantially constant slope over various ambient temperature and conditions, thus eliminating use of EEPROM look-up tables and the drawbacks associated therewith.
Parallel optics module 700 includes an electrical connector 704 to couple module 700 to PCB 712. Electrical connector 704 may include a ball grid array (BGA), a pluggable pin array, a surface mount connector, or the like.
Parallel optics module 700 may include an optical port 706. In one embodiment, optical port 706 may include an optical port comprising for example the SFF connector shown in
In one embodiment, the VCSELs within the parallel optics module 700 may emit light at different wavelengths for use in Wavelength Division Multiplexing (WDM). In one embodiment, parallel optics module 700 may transmit and/or receive optical signals at approximately 850 nanometers (nm). In another embodiment, parallel optics module 700 may operate with optical signals having a transmission data rate of approximately 34 Gigabits per second (Gb/s) per channel. In yet another embodiment, optical signals transmitted and received by parallel optics module 700 may travel up to a few hundred meters. It will be understood that embodiments of the invention are not limited to the optical signal characteristics described herein.
Parallel optics module 806 may be coupled to a processor 808 and storage 810 via a bus 812. In one embodiment, storage 810 has stored instructions executable by processor 808 to operate router 800.
Router 800 includes input ports 802 and output ports 804. In one embodiment, router 800 receives optical signals at input ports 802. The optical signals are converted to electrical signals by parallel optics module 806. Parallel optics module 806 may also convert electrical signals to optical signals and then the optical signals are sent from router 800 via output ports 804. According to embodiments of the invention, the ER slope efficiency of the lasers within the router 800 may be maintained in real time across a broad ambient temperature range.
The above description of illustrated embodiments of the invention, including what is described in the Abstract, is not intended to be exhaustive or to limit the embodiments to the precise forms disclosed. While specific embodiments of, and examples for, the invention are described herein for illustrative purposes, various equivalent modifications are possible, as those skilled in the relevant art will recognize. These modifications can be made to embodiments of the invention in light of the above detailed description.
The terms used in the following claims should not be construed to limit the invention to the specific embodiments disclosed in the specification. Rather, the following claims are to be construed in accordance with established doctrines of claim interpretation.