This application claims the priority benefit of Italian Application for Patent No. 102023000000495 filed on Jan. 16, 2023, the content of which is hereby incorporated by reference in its entirety to the maximum extent allowable by law.
The description relates to signal transmission.
Solutions as described herein can be applied, for instance, to transmission of signals between semiconductor chips or dice (oftentimes referred to as inter-chip data communication).
Gate drivers (e.g., for electric motor control), galvanically isolated interfaces, medical equipment, sensor networks and data communications in general are exemplary of possible applications of solutions as described herein.
Inter-chip data communication may involve transmitting a modulated radio-frequency, RF carrier between two (integrated circuit) semiconductors chips or dice: as used therein chip/chips and die/dice will be regarded as synonyms.
This type of communication may involve transmitting a low-level RF signal that is rectified at the receiver (e.g., via an envelope detector) and then amplified to be converted into a digital pulse-width modulated (PWM) signal. A final conversion (to recover output data that replicate the transmitted data) can be performed via a hysteresis comparator.
Offset phenomena such as, e.g., an offset voltage between the two inputs of a first amplifier in the receiver can adversely affect correct recovery of the PWM signal.
Adequate offset compensation is thus desirable in order to facilitate accurate demodulation at the receiver.
There is a need in the art to address the issues discussed above.
One or more embodiments relate to a receiver circuit.
One or more embodiments relate to a corresponding system. A system comprising two or more (integrated circuit) inter-communicating semiconductor chips or dice is exemplary of such system.
One or more embodiments relate to a corresponding method.
Solutions as described herein provide a self-calibration technique for offset compensation in an amplitude-shift keying (ASK) receiver wherein a low-level baseband signal is amplified.
Solutions as described herein involve a dynamic approach that facilitates dynamically compensating also an offset drift induced by a temperature change.
Solutions as described herein do not involve external or non-standard components and are suitable for implementation via CMOS integration technology (e.g., GaN or SiC technology for power MOSFET transistors).
Solutions as described herein provide a fully integrated solution for automatic and accurate analog self-calibration wherein manual and/or preliminary setting can be dispensed with.
Solutions as described herein do not involve an increased power consumption and can be implemented with negligible area occupation.
Solutions as described herein facilitate achieving package scale isolation with galvanic isolation implemented without using specific high-voltage (HV) components.
Solutions as described herein facilitate providing an inter-chip communication channel implemented via wireless RF transmission.
A judicious selection of the distance between two chips facilitates achieving higher isolation ratings (10-12 kV for reinforced isolation) and higher CMTI (>100 kV). In this context, common mode transient immunity (CMTI) is defined as the maximum tolerable rate of rise or fall of a common mode voltage applied between two isolated circuits.
This greatly facilitates arranging two inter communicating chips or dice on two neighboring die pads in a same leadframe packaged in a same body of molding compound (package scale isolation).
Solutions as described herein employ a simple approach that can be adapted easily to different applications, offset values, and accuracy levels with a procedure that can start automatically at start-up.
Solutions as described herein provide a self-calibration technique for offset compensation in an, e.g., ASK receiver where a low base-band signal is amplified by adopting an analog dynamic approach that facilitates dynamically compensating offset drifts induced by temperature.
One or more embodiments will now be described, by way of example only, with reference to the annexed figures, wherein:
Corresponding numerals and symbols in the different figures generally refer to corresponding parts unless otherwise indicated.
The figures are drawn to clearly illustrate the relevant aspects of the embodiments and are not necessarily drawn to scale.
The edges of features drawn in the figures do not necessarily indicate the termination of the extent of the feature.
In the ensuing description one or more specific details are illustrated, aimed at providing an in-depth understanding of examples of embodiments of this description. The embodiments may be obtained without one or more of the specific details, or with other methods, components, materials, etc. In other cases, known structures, materials, or operations are not illustrated or described in detail so that certain aspects of embodiments will not be obscured.
Reference to “an embodiment” or “one embodiment” in the framework of the present description is intended to indicate that a particular configuration, structure, or characteristic described in relation to the embodiment is comprised in at least one embodiment. Hence, phrases such as “in an embodiment” or “in one embodiment” that may be present in one or more points of the present description do not necessarily refer to one and the same embodiment.
Moreover, particular conformations, structures, or characteristics may be combined in any adequate way in one or more embodiments.
The headings/references used herein are provided merely for convenience and hence do not define the extent of protection or the scope of the embodiments.
For simplicity and ease of explanation, throughout this description, and unless the context indicates otherwise, like parts or elements are indicated in the various figures with like reference signs, and a corresponding description will not be repeated for each and every figure.
Also, throughout this description, a same designation may be used for brevity to designate: a certain node or line and a signal occurring at that node or line, and/or a certain component (e.g., a capacitor or a resistor) and an electrical parameter thereof (e.g., capacitance or resistance/impedance).
As illustrated, the first circuit C1 has a supply voltage VDD1 and a (first) ground GND1; the second circuit C2 has a supply voltage VDD2 and a (second) ground GND2. The voltage VDD1 may be different from the voltage VDD2 and the ground GND1 may be different from the ground GND2, with possible ground shifts.
Communication as represented by the arrows can involve power transfer PT (e.g., from the circuit C1 to the circuit C2) and/or data transfer DT (e.g., from the circuit C1 to the circuit C2 and vice-versa).
The circuit C1 may comprise, just by way of example, human/data interfaces, bus/network controllers, microcontroller units (MCUs).
The circuit C2 may comprise, again just by way of example, sensor interfaces, gate drivers, intelligent power switches medical devices, a communication network.
Again, merely by way of example, a single-channel galvanic isolated gate driver can be used across a range of switching topologies to control power switches such as silicon-carbide (SiC) or silicon MOSFET transistors and IGBT insulated-gate bipolar transistors.
In the following, transmission from the chip C1 towards the chip C2 will be referred to throughout for the sake of simplicity in order to avoid making the description unduly complicated.
Transmission as exemplified herein involves applying input data ID to a modulator (MOD) (e.g., a pulse-width modulator) PWMM to produce a PWM-modulated signal that is applied to a transmitter TX for transmission via transmitter (micro)antenna TX1.
The transmitted signal is received via a receiver RX coupled to a receiver (micro)antenna RX1 to and transferred as a pulse-width modulated (PWM) signal to a demodulator (DEMOD) (e.g., a pulse-width demodulator) PWMD to produce output data OD.
In certain applications as discussed in the following (these may be in the automotive sector, for instance) such an output PWM signal PWMOUT can be used to drive an electronic switch such as, e.g., a power MOSFET transistor.
Various approaches (a transformer approach, a capacitive approach, an opto-coupler approach) can be resorted to in order to implement an arrangement as exemplified in
Solutions as described herein can be advantageously incorporated to the receiver RX as discussed in the following. To that effect, reinforced galvanic isolation interfaces (e.g., 10 kV) not bound to a specific integration technology is desirable.
As illustrated in
In certain embodiments, the flow of common-mode transient immunity (CMTI) currents towards ground can be facilitated by coupling the receiver RX in an AC (alternating current) mode to the antenna RX1 via two decoupling capacitances while a central socket of the antenna is connected to ground.
As illustrated in
The one exemplified here (this also applies to the discussion of
Turning back to the more general representation of
As illustrated, the output from the differential amplifier 12 is coupled (e.g., via a further amplifier 14 providing additional gain) to a (hysteresis) comparator 16 whose output is a PWM-modulated signal PWMOUT suited to drive a load, e.g., to on-off turn an electronic switch SW such as a power MOSFET transistor.
It is noted that the load (e.g., the switch SW) is usually a distinct element from the embodiments.
In inter-chip data communication as illustrated in
The low-level RF signal at the receiver is thus rectified (at the envelope detector 10) and then amplified (at the gain stages 12 and 14) to be applied to a hysteresis comparator 16 to provide an output PWM signal PWMOUT.
An offset voltage between the two nodes VA, VB (the inputs to the amplifier 12) can adversely affect an even compromise a correct recovery of the PWM signal. Applying an offset compensation technique to compensate that offset voltage thus facilitates accurate demodulation of the PWM signal.
A related offset compensation circuit should desirably operate not only at start-up and standby conditions but also during operation in so far as this facilitates compensating offset drift effects.
As noted, a resistor RL1 is arranged between the supply line VDD and the parallel connection of the current flow paths through the MOSFET transistors M1, M2, with the capacitor CED (shown in dashed lines) coupled between the node VA and ground (or the line VDD) to remove residues of the RF carrier from the signal from the envelope detector 10.
The envelope signal VA between the resistor RL1 and the MOSFET transistors M1, M2 is applied to the input of the first amplifier stage 12 that comprises a differential pair of two (e.g., MOSFET) transistors 121, 122 having their control terminals (gates, in the case of field-effect transistors such as MOSFETs) coupled to receive the envelope signal VA (at the control terminal of the transistor 121) and a reference signal VB (at the control terminal of the transistor 122).
A tail current generator 123 is provided between the transistors 121, 122 and ground GND to be traversed by a current flowing through the parallel-connected current flow paths therethrough (source-drain, in the case of a field-effect transistors such as MOSFETs) through the transistors 121, 122.
Two resistors (both referenced as RL2) are arranged coupled each between the supply line VDD and: a node C at the current flow path through the transistor 121, and a node D at the current flow path through the transistor 122.
The output from the amplifier stage 12 is obtained as a differential signal between the nodes C and D and applied to the (differential) gain stage 14 to be then delivered to the input of the hysteresis comparator 16 that produces the output signal PWMOUT the original PWM signal.
Various approaches can be considered for countering undesired offsets in a receiver as discussed previously.
A first approach may involve manual trimming using metal or “poly” fuses (eFuses). For instance, such fuses can replace the switches in the resistive string RL2 in
Another approach may involve using a floating gate MOSFET transistor to implement an analog trim-voltage memory (ATVM). Such an ATVM can be used for trimming offset voltages and currents resulting from threshold mismatches in analog circuits such as operational amplifiers and comparators. It can be incorporated into a standard digital CMOS process without additional processing steps as those currently involved in EEPROM fabrication. However, it still involves the non-negligible provision of additional elements.
Still another approach may involve using a one-time programmable (OTP) non-volatile memory (NVM) such an e-fuse or antifuse to replace floating-gate or e-fuse techniques as used in analog/sensor trimming and calibration. Macros of the OTP type offer a good deal of security, reliability and flexibility as desirable to cost-effectively implement analog trimming and calibrate operations in consumer, automotive and mobile communication devices (ADC, receivers etc.). Also, die area occupation of an OTP element is small, and this reduces cost.
A drawback of this approach lies in the need for an initial programming phase either after chip packaging or by the user.
A still further approach may involve digital offset cancellation in a self-calibration technique: this approach is not able to support satisfactorily various operation phases such as start-up, working (operation proper) and standby as desirable for gate drivers. Applications with higher PWM rates (e.g., PWM rates higher than 400 KHz) are not compatible with PWM data transmission.
In solution as described herein an offset compensation solution is proposed based on a mixed analog/digital offset compensation strategy that is capable of tracking process, voltage and temperature (PVT) variations during different operating conditions, e.g., start-up, working, and standby conditions.
More specifically,
Specifically, possible time behaviors of the signals identified above are shown (from left to right) with reference to three different phases: a start-up phase SUP, without any PWM signal assumed to be applied to the receiver; a working phase WP, with a PWM (e.g., data) signal assumed to be applied to the receiver; and a stand-by phase STBY, again without any PWM signal assumed to be applied.
Merely by way of example (and without limitations for the embodiments) a period TPWM of the PWM signal equal to 0.5 microseconds can be considered in connection with a start-up time Tstart-up (the time for the signal VB to initially reach the signal VA) of 200 nanoseconds.
A dynamic offset compensation DOT (of a duration of about 20 nanoseconds) is shown in the curve for the possible offset signal VOS=VA−VB.
The times T1 (e.g., 400 nanoseconds) and T2 (e.g., 20 nanoseconds) are shown in the two lowermost curves of
A time TCK,LF such that TCK,LF>2TPWM (e.g. TCK,LF equal to 2 microseconds) is also illustrated in connection with the clock signal VCK,LF as discussed in
All of the quantitative figures referred to in the foregoing are merely exemplary and non-limiting: they are given primarily with the aim of elucidating certain relationships that may exist between the durations of various signals discussed herein.
In
Also, like parts or elements being indicated with like reference numbers/symbols in
To summarize, the circuit illustrated in
As illustrated, the differential stage 121, 122, RL2 has first C and second D output nodes configured to produce across them a replica of the OOK signal having the RF carrier removed therefrom.
As illustrated, the circuit in
Comparing the circuit diagram of
Comparing the circuit diagram of
Operation (on-off switching) the switches S1, Φ1, S2, Φ2 and S3, Φ1 is controlled via the signals Φ1 and Φ2. These signals can be produced via a signal generator (GEN) 100 as illustrated in the diagram of
It is noted that the switches S1, Φ1 and S3, Φ1 are controlled via the signal Φ1, while the switch S2, Φ2 is controlled via the signal Φ2.
It is otherwise noted that (as visible in the two lowermost curves in the diagram of
This kind of “dis-overlapping” advantageously counters undesired effects of the transmitted PWM signal on offset compensation, e.g., facilitating the PWM signal in being at a “low” level (switch SW turned off) during offset compensation.
Undesired inaccuracies in offset compensation during the start-up (SUP) and standby (STBY) phases are countered in so far the receiver input is short-circuited by the switch S1, Φ1 and the input to the comparator 16 is forced to zero (GND) by the switch S3, Φ1 so that no PWM signal (and also no input noise) propagates through the receiver. Also, offset compensation during the working phase (WP), when a PWM signal is expected to propagate through the receiver, is affected during the “off” times of the PWM signal, that is when the PWM signal is at zero level.
The arrangement of
Such an arrangement is advantageous, e.g., with GaN technologies that have offsets (much) higher than CMOS technologies and deserve not to be neglected with respect to typical variations in the bias voltage VA.
Advantageously, the arrangement of
As illustrated herein, this result is facilitated by a mixed analog/digital compensation approach, which combines analog compensation and digital control.
A possible implementation of the generator 100 (this may be either a distinct circuit or be incorporated to a single circuit with the receiver of
The two first flip-flops 101, 102 are clocked via a clock signal VCK,LF (generated with a clock generator CLK of any type known to those of skill in the art, e.g., a ring oscillator: this may possible be a distinct element from the embodiments) with a period TCK,LF such that TCK,LF>2TPWM as illustrated in the diagram of
The third flip-flop 103 is clocked via the PWM signal PWMOUT from the comparator 16 (logically inverted at an inverter 104) or any other signal synchronous with such a PWM signal. Essentially, as discussed in the following, the signal VCK,LF can be regarded as a (e.g., square wave) signal that is “slow” with respect to the PWM signal.
As illustrated in
The delay blocks 105 and 107 thus dictate the characteristics of the signals Φ1 and Φ2 (primarily the durations of the intervals T1 and T2).
As noted, the one illustrated in
To summarize, the one illustrated in
In the examples considered herein the PWM-modulated signal PWMOUT2 has a period (e.g., TPWM=0.5 microseconds) and the logic circuitry 100 is configured to make the first switch S1, Φ1, the second switch S2, Φ2 and the third switch S3, Φ1 conductive during the start-up and standby phases for a time T1 (e.g., 400 nanoseconds) that is at least one order of magnitude (that, is at least ten times) longer than the off times T2 (e.g., 20 nanoseconds) of the PWM-modulated signal.
As exemplified in
As illustrated, the circuit comprises a clock generator CLK (optionally a ring oscillator) to produce the first clock signal VCK,LF to activate the first branch 101, 102 of the logic circuitry 100 and make the switches S1, Φ1; S2, Φ2; and S3, Φ1 conductive (even) in the absence of the PWM-modulated signal PWMOUT.
As illustrated, the second branch 103, 107 of the logic circuitry 100 is coupled to the comparator 16 to receive therefrom the PWM-modulated signal PWMOUT to make the switches S1, Φ1; S2, Φ2; and S3, Φ1 conductive during off times T of the PWM-modulated signal.
As illustrated, the logic circuitry 100 is configured to produce: a first drive signal Φ1 to make the first switch S1, Φ1 and the third switch S3, Φ1 conductive, and a second drive signal Φ2 to make the second switch S2, Φ2 conductive.
As illustrated, the first signal Φ1 and the second signal Φ2 exhibit corresponding (i.e., substantially identical, but slightly dis-overlapped) time behaviors with the second signal Φ2 having rising edges lagging the rising edges of the first signal Φ1 and falling edges preceding the falling edges of the first signal Φ1.
As exemplified in the diagram of
As visible on the left-hand side of the diagram for the voltage VB in
To that purpose, the digital circuitry (e.g., essentially the generator 100, with the PWM signal not present yet) operates at low frequency clock signal (VCK,LF having a frequency fCK,LF of, e.g., 0.5 MHz) thus providing a large (long) compensation pulse T1.
During the working phase WP (center portion of
During the working phase WP, the clock of the digital circuit is switched from the previous low-frequency clock to a clock that is extracted from the PWM signal (e.g., with a frequency fPWM=2 MHz). A narrow pulse (about 20 ns, for instance) is then generated for dynamic offset compensation (DOT in the diagram of
It is noted that, during the working phase WP as represented in
It is noted that the highest number of PWM pulses that can be lost during compensation in the start-up and/or standby phases (SUP and STBY, respectively) due to offset compensation is equal to fPWM/2fCK,LF (e.g., 2 in the exemplary implementation presented herein).
During the standby phase STBY (right-hand portion of
It will be appreciated that, while a sequence of a start-up phase SUP, a working phase WP and standby phase STBY is illustrated in
It is once more noted that the highest number of PWM pulses that can be lost as a result of compensation during in the start-up and/or standby phases (SUP and STBY, respectively)—see the left-hand side of the central portion in
To summarize, a solution as proposed herein comprises offset compensation circuitry including: a first switch S1, Φ1 operable to be made conductive to short-circuit the input to the envelope detector M1, M2, RL1, CED; a storage capacitor CH coupled to the second input VB of the differential stage 121, 122, RL2; a second switch S2, Φ2 operable to be made conductive to feed back to the storage capacitor CH a signal (e.g., from the differential stage 18) indicative of the difference between the first output node C and the second D output node of the differential stage 121, 122, RL2; and a third switch S3, Φ1 operable to be made conductive to short-circuit the input to the comparator 16.
The logic circuitry 100 as exemplified in
Once the start-up phase completed, the logic circuitry 100 as exemplified in
A standby phase STBY may then follow where the switches S1, Φ1; S2, Φ2; and S3, Φ1 are again made conductive in the absence of the PWM-modulated signal PWMOUT, with the circuit returning from the standby phase to working phase in response to a PWM (OOK) signal being again received via the antenna RX1. Consequently, the working phase WP can be regarded as a phase alternating with the start-up phase SUP and/or at least one standby phase STBY.
As discussed, a (further) differential stage 18 can be advantageously coupled across the first output node C and the second D output node of the differential stage 121, 122, RL2 to apply a (loop) gain to the signal indicative of the difference between the first output node C and the second output node D of the differential stage 121, 122, RL2 that is fed back to the storage capacitor CH. This option is found to facilitate proper operation of the compensation loop with the target of keeping at zero the difference of the voltages at the nodes C and D.
As discussed, a (further) gain stage 14 is optionally arranged between the differential stage 121, 122, RL2 and the comparator 16 with the purpose of applying a (transfer) gain to the replica of the OOK signal having the RF carrier removed that is applied to the comparator 16 to produce the PWM-modulated signal PWMOUT.
This option is found to facilitate proper operation of the comparator in the presence of small (weak) input signals to the receiver.
A solution as proposed herein is able to operate adequately in (all of) the three operating phases SUP, WP, and STBY illustrated in the diagram of
The claims are an integral part of the technical teaching provided in respect of the embodiments.
Without prejudice to the underlying principles, the details and embodiments may vary, even significantly, with respect to what has been described by way of example only without departing from the extent of protection. The extent of protection is determined by the annexed claims.
Number | Date | Country | Kind |
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102023000000495 | Jan 2023 | IT | national |