The invention relates to a receiver circuit for a reception element, in particular for an optical reception element such as, by way of example, a photodiode or a phototransistor.
As is known, cascode circuits are used as receiver circuits for reception elements. Cascode circuits of this type are described for example in the following documents: “A Low-Power 20-GHz 52-dBQ Transimpedance Amplifier in 80-nm CMOS” (Christian Kromer, Gion Sialm, Thomas Morf, Martin L. Schmatz, Frank Ellinger, Daniel Erni and Heinz Jäckel; IEEE Journal of Solid-State Circuits, Vol. 39, No. 6, June 2004, pp. 885-894) and “Low Noise Current-Mode CMOS transimpedance Amplifier for Giga-Bit Optical Communication” (S. M. Park and C. Toumazou; Integrated Solid State Circuit Conference (ISSCC) 1998, Conference Proceedings pp. S. I-293-I-296).
In this case, regulated cascode circuits, in particular, have proved successful for use in optical receiver circuits, and are likewise described in the documents cited.
Receiver circuits according to the “principle of the regulated cascode” are of interest primarily for “array” amplifiers, that is to say for amplifiers arranged in the form of an array, and also for future optical chip-to-chip connections; this is because this type of receiver circuits can be realized using CMOS technology and can therefore be constructed with minimal power loss and nevertheless with highly favorable noise properties and bandwidth properties. Furthermore, receiver circuits of this type can manage with very small supply voltages.
The invention is based on the object of specifying a receiver circuit according to the cascode principle which enables a reception signal fed into the receiver circuit, for example an optical data signal, to be processed—e.g. amplified—as far as possible without any errors.
The invention is based on the object, in particular, of enabling the reception signals fed in on the input side to be reliably processed even when the electrical signals supplied by the reception element connected to the receiver circuit fluctuate in terms of magnitude, for example become excessively large.
The aforementioned objects are achieved according to the invention by means of a receiver circuit in which control means are connected to a cascode circuit of the receiver circuit. According to the invention, said control means counteract an overdriving of the cascode circuit on account of an excessively large reception signal (e.g. photocurrent) of the reception element.
One essential advantage of the receiver circuit according to the invention is to be seen in the fact that, on account of the control means provided according to the invention, it is always ensured that the cascode circuit remains “ready for operation”; this is because leaving the permissible operating range of the cascode circuit on account of an excessively large reception signal of the reception element is prevented.
A further essential advantage of the receiver circuit according to the invention consists in the fact that the control means additionally increase the dynamic range of the cascode circuit since they prevent overdriving.
The control means are preferably configured in such a way that they counteract an increase in the high level of the output signal of the cascode circuit. In addition or as an alternative, they may also counteract an increase in the low level of the output signal of the cascode circuit. What is achieved by these measures is that the cascode circuit always generates an output signal that can be utilized further or “can be evaluated”, mainly because the output levels of the output signal of the cascode circuit cannot become too large owing to the “counteracting” control means.
One advantageous refinement of the receiver circuit provides for an input path of the cascode circuit to have a series circuit comprising a first and a second transistor. A resistor is additionally connected to the second transistor. The electrical junction point between the first and second transistors forms an input of the receiver circuit. An output of the receiver circuit is formed by the electrical junction point between the resistor and the second transistor.
The control means are preferably configured in such a way that they reduce the resistance of the resistor already mentioned and also increase the transistor current through the first transistor in the event of a rise in the high level of the output signal.
In a corresponding manner, it is regarded as advantageous if the control means increase the resistance of the resistor and also reduce the transistor current of the first transistor in the event of a fall in the high level of the output signal. This has the effect that the high level remains in a predetermined level range or level interval.
The control means may for example evaluate the output voltage or the output current of the receiver circuit.
The cascode circuit is preferably a “regulated cascade” circuit. Such a “regulated cascode” circuit has a feedback path that reacts upon the input path of the cascode circuit. Such a feedback path may be formed for example by an additional transistor (called “third transistor” hereinafter) and an additional resistor (called “second resistor” hereinafter). The function of the feedback path of such a “regulated cascode” circuit consists in reducing the input resistance of the input path of the cascode circuit.
In the case of a cascode circuit, the “first” transistor of the input path already mentioned above is usually driven with a predetermined voltage in such a way that fixedly predetermined current flows through this “first” transistor. The setting of the current through this “first” transistor may be set for example by means of a current mirror path of the cascode circuit, which acts on the base or gate terminal of said “first” transistor (base terminal in the case of a bipolar transistor or gate terminal in the case of a field effect transistor).
Such a current mirror path may be formed for example by a resistor (called “third resistor” hereinafter) and a transistor (called “fourth transistor” hereinafter).
Preferably, the first and the third resistor are in each case formed by controllable resistor devices whose resistance can in each case be set by means of a control signal.
By way of example, the first controllable resistor is formed by a nonreactive resistor having a fixedly predetermined resistance and by a transistor (called “fifth transistor” hereinafter) connected in parallel therewith; this fifth transistor enables the resistance of this parallel circuit to be reduced.
Accordingly, the third resistor may likewise be formed by a nonreactive resistor having a fixedly predetermined further resistance and by a transistor (“sixth” transistor) connected in parallel. This sixth transistor enables the electrical resistance of the parallel circuit to be reduced and, consequently, the current through the first transistor to be increased.
The control means for controlling the cascode circuit preferably comprise a high level peak detector device and a low level peak detector device. In this case, the high level peak detector device is used for driving the fifth transistor already mentioned and the low level peak detector device is used for driving the sixth transistor already mentioned.
Both the high level peak detector device and the low level peak detector device may in each case be formed by, or comprise, a transistor, a capacitor and a current source.
Moreover, it is regarded as advantageous if a reference voltage can in each case be applied to the high level peak detector device and to the low level peak detector device, which reference voltage can be used to set a threshold value for the “activation” of said devices: By way of example, it is thus possible to prescribe a high level threshold value for the high level peak detector device and a low level threshold value for the low level peak detector device.
The invention is explained below by way of example with reference to the figures, in which:
In connection with FIGS. 1 to 12, identical reference symbols are used—if possible—for identical or comparable components or structural parts.
The receiver circuit 10 has, on the input side, a cascode circuit 15 with an input path 20 comprising a series circuit comprising a first transistor T1 and a second transistor T2. The electrical junction point E10 between the first transistor T1 and the second transistor T2 forms an input E10 of the receiver circuit 10 and of the cascode circuit 15.
A first resistor R1 is connected to the series circuit comprising the two transistors T1 and T2, one terminal of said resistor being connected to the supply voltage VDD and the other terminal of said resistor being connected to the transistor series circuit T1/T2. The electrical junction point 30 between the first resistor R1 and the second transistor T2 forms an output A10 of the receiver circuit 10 and of the cascode circuit 15.
A feedback path 50 formed by a series circuit comprising a third transistor T3 and a second resistor R2 is connected to the input path 20. The junction point 60 between the third transistor T3 and the second resistor R2 is connected to a gate terminal 70 of the second transistor T2. The gate terminal 75 of the third transistor T3 is connected to the input E10 of the receiver circuit 10.
The first transistor T1 of the input path 20 is driven by a current mirror path 80. Said current mirror path 80 is formed by a third resistor R3 and a fourth transistor T4. The function of the current mirror path 80 consists in effecting voltage regulation for the gate terminal 85 of the first transistor T1 and thus impressing a fixed drain-source current I2 into the first transistor T1. The current I2 through the first transistor T1 is thus constant.
The following relationships thus hold true:
Vout=VDD−11*R1
I2=I1+IPH
The receiver circuit 10 in accordance with
a) Function Without Feedback path 50:
Without the feedback path 50, the input resistance would be determined by the source impedance of the second transistor T2 and thus by the reciprocal 1/gm of the transconductance gm of the second transistor T2. The input resistance would thus be largely independent of the load resistor R1, so that the latter could be given a relatively large value.
The transconductance gm of the second transistor T2 is proportional to the current I1 through the second transistor T2. In order, then, to achieve a large current I1 and a large transconductance gm, the resistor R1 (for a given supply voltage) would have to be chosen with a small value and/or the supply voltage VDD would have to be chosen with a large value. Both measures are disadvantageous, however, since both measures would increase the noise of the receiver circuit 10.
In order to solve this “noise problem”, the feedback path 50 is present, the functioning of which will now be explained.
b) Function with Feedback Path 50:
The feedback path 50 regulates the gate voltage of the second transistor T2. The function of the feedback path 50 consists in reducing the effective input impedance at the input E10 of the receiver circuit 10 by the factor of the gain of the feedback path 50 gm (T3)*R2 (gm(T3): transconductance of the third transistor T3); the transconductance gm(T2) of the second transistor T2 can thus be chosen to be relatively small without the input resistance of the receiver circuit 10 becoming too large. As a result, on account of the feedback path 50, both the current I2 through the first transistor T1 and the transconductance gm(T2) of the second transistor T2 can be chosen with a small value and the load resistor R1 can be chosen with a large value without the input resistance of the receiver circuit 10 increasing: the noise of the receiver circuit 10 is likewise reduced by the feedback path 50 and the sensitivity of the receiver circuit 10 is increased.
What is problematic about the receiver circuit 10 in accordance with
V1=VDD−I1*R1=VDD−I2*R1
the current I1=I2 close to the first resistor R1.
If a photocurrent IPH having a “high” level is then applied, the current I1 through the second transistor T2 decreases since the current I2, which is formed by the current total I1+IPH and flows away to ground through the first transistor T1, remains constant: the output voltage VOUT at the output A10 of the receiver circuit 10 thus rises and assumes the value V2:
V2=VDD−I1*R1=VDD−(12−IPH)*R1
If the photocurrent IPH in the high level then reached the value I2, current would not be able to flow either through the first resistor R1 or through the second transistor T2, as a result of which the transconductance gm thereof would become small and the input impedance at the input E10 of the receiver circuit 10 would become large. The receiver circuit 10 would thus become relatively slow and function increasingly worse.
The resulting behavior of the receiver circuit 10 in accordance with
In order to prevent such an alteration of the behavior of the receiver circuit 10 and in order, moreover, to ensure that the high level V2 and the low level V1 of the output voltage Vout at the output A10 of the receiver circuit 10 remain largely constant even when the photocurrent IPH, that is to say the “high level” of the photocurrent, rises on average over time, additional control means are provided according to the invention.
An exemplary embodiment of a receiver circuit according to the invention with additional control means 150 is illustrated in
The additional control means 150 comprise two additional transistors, which are referred to hereinafter as fifth transistor T5 and sixth transistor T6 and modify the cascode circuit 15 (cf.
The control means 150 act on the cascode circuit 15 in such a way that the high level V2 and the low level V1 of the output signal VOUT of the receiver circuit 10 or of the cascode circuit 15 in each case remain approximately constant.
For this purpose, the fifth transistor T5 is connected in parallel with the first resistor R1, as a result of which a controllable resistor device is formed. The fifth transistor T5 is driven by the high level peak detector 200, to which the output voltage VOUT of the receiver circuit 10 is applied on the input side.
The sixth transistor T6 is connected in parallel with the third resistor T3, as a result of which a controllable resistor device is likewise formed. The gate terminal of said sixth transistor T6 is driven by the low level peak detector 210, at which the output voltage VOUT of the receiver circuit 10 is present on the input side. For the rest, the receiver circuit 10 in accordance with
The receiver circuit 10 in accordance with
The current I2 through the first transistor T1 can be set by means of the current mirror path 80, by the sixth transistor T6 being driven. The sixth transistor T6 reduces the resistance R3′ of the parallel circuit comprising the third resistor R3 and the sixth transistor T6; the current I2 through the first transistor T1 is thereby increased.
The influence of the two transistors T5 and T6 is explained below with reference to
If the photocurrent IPH of the photodiode 100 then increases, the high level V2 of the output voltage VOUT will rise, while the low level V1 of the output voltage VOUT largely remains the same. This could have the effect—as already explained above—of the high level V2 becoming too large and the current through the second transistor T2 becoming too small. In order to counteract this development, the resistance R1′ of the parallel circuit comprising the resistor R1 and the fifth transistor T5 is reduced (cf.
Both the high level V2 and the low level V1 increase on account of the reduction of the resistance R1′. The dynamic range Ddyn of the receiver circuit 10 remains small, however, since it is still limited by the current I2 of the first transistor T1. Therefore, it is additionally necessary to increase the current I2 of the first transistor T1 in order to increase the dynamic range. The dynamic range Ddyn is defined as the ratio of maximum permissible to minimum permissible input current (=sensitivity limit), that is to say IPH,max/IPH,min at the input of the receiver circuit 10.
The current I2 of the first transistor T1 is increased by means of a reduction of the resistance R3′ of the parallel circuit comprising the third resistor R3 and the sixth transistor T6, by the transistor T6 being correspondingly “switched on”.
As a result, the signal profile of the output voltage VOUT shown in
If, moreover, only the current I2 through the first transistor T1 were increased without reducing the resistance R1′ in the input path 20, the voltage difference between the high level V2 and the low level V1 would not be reduced: the drain-source voltage at the second transistor T2 would become too small, which would in turn impair the function of said transistor T2—as already explained—since the gain of this transistor might fall to zero.
The regulation of the control voltages VCl and VC2 at the two transistors T5 and T6 is effected by the high peak level detector 200 and the low level peak detector 210 (cf.
The low level peak detector 210 determines in each case the temporal minimum value of the output voltage from the temporal profile of the output voltage VOUT at the output A10 of the receiver circuit 10 and generates a control voltage VC2 for the sixth transistor T6 from said minimum value. Thus, the larger the low level V1 of the output voltage VOUT at the output A10 of the receiver circuit 10 becomes, the more the sixth transistor T6 is turned on and the resistance R3′ is reduced; this leads to a rise in the current I2 through the first transistor T1 and subsequently to a reduction of the low level V1 of the output voltage VOUT.
The construction of the high level peak detector 200 is shown by way of example in greater detail in
It is evident in
A differential amplifier 300 is additionally evident in
By applying a predetermined reference voltage Vref-high to the reference source follower circuit 400, it is possible to establish the extent to which the control voltage VC1 at the output of the high level peak detector 200 is to depend on the output voltage Vout of the receiver circuit 10. In concrete terms, the reference voltage Vref-high specifies that high level of the output voltage Vout from which a “counter-control” or “readjustment” is to be effected by the control means 150. The reference voltage Vref-high thus prescribes a regulation threshold or a minimum threshold for the high level of the output voltage Vout from which “counter-control” is effected.
Consequently, a temporal profile of the control voltage VC1 as is illustrated in
A differential amplifier 600 is additionally evident in
By applying a predetermined reference voltage Vref-low to the reference source follower circuit 700, it is possible to establish the extent to which the control voltage VC2 at the output of the low level peak detector 210 is to depend on the output voltage Vout of the receiver circuit 10. In concrete terms, the reference voltage Vref-low specifies that low level of the output voltage Vout from which a “counter-control” or “readjustment” is to be effected by the control means 150. The reference voltage Vref-low thus prescribes a regulation threshold or a minimum threshold for the low level of the output voltage Vout from which “counter-control” is effected.
Consequently, a temporal profile of the control voltage VC2 as is illustrated in