Claims
- 1. An optical information recording medium comprising at least a recording thin film that effects a phase change between an amorphous state and a crystalline state by irradiation of a laser beam, the recording thin film formed on a disk-shaped substrate including guide grooves having a groove depth d (nm), whereinthe groove depth d, a wavelength λ1 (nm) of laser beam for forming a record mark on the recording thin film based on an information signal and a refractive index n1 of the substrate at the wavelength λ1 satisfy a relationship: 0.05λ1/n1≦d; the groove depth d (nm), a wavelength λ2 (nm) of laser beam for reproducing the record mark formed on the recording thin film and a refractive index n2 of the substrate at the wavelength λ2 satisfy a relationship: d≦0.09×λ2/n2; a phase φ1 of light reflected from the record mark and a phase φ2 of light reflected from a non-record mark region with respect to laser beam at the wavelength λ2 satisfy a relationship: (2n+0.7)×π<φ2−φ1(2n+1.3)×π, where n is an integer; and an amplitude intensity I1 of light reflected from the record mark in the optical information recording medium and an amplitude intensity I2 of light reflected from a non-record mark region with respect to incident laser beam at the wavelength λ2(nm) satisfy a relationship: I1<I2.
- 2. The optical information recording medium according to claim 1, wherein an amplitude intensity I1 of light reflected from the record mark in the optical information recording medium and an amplitude intensity I2 of light reflected from the non-record mark region with respect to incident laser beam at the wavelength λ2 (nm) satisfy a relationship:1.3<I2/I1<3.
- 3. The optical information recording medium according to claim 1, wherein the recording thin film of the optical information recording medium for the record mark is in an amorphous state, and the recording thin film of the optical information recording medium for the non-record mark region is in a crystalline state.
- 4. The optical information recording medium according to claim 1, wherein the recording thin film of the optical information recording medium for the record mark is in a crystalline state, and the recording thin film of the optical information recording medium for the non-record mark region is in an amorphous state.
- 5. The optical information recording medium according to claim 1,wherein the recording thin film comprises at least one element selected from the group consisting of rare gas elements, B, C, Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Zr, Ni, Se, Nb, Sb, Ta, W, Au, Pb and Bi, and the sum of the atomic weights of elements other than Ge and Te among these elements is not more than 10% of the sum of the atomic weights of Ge and Te.
- 6. The optical information recording medium according to claim 1,wherein a protective layer, the recording thin film, a protective layer, and a reflective layer are formed on the substrate in this order, and a thickness of the recording thin film is not more than 20 nm.
- 7. The optical information recording medium according to claim 1,wherein main elements constituting the recording thin film are Ge and Te, and a ratio in atomic weight of Ge to Te is in the range from 45:55 to 55:45.
- 8. An optical information recording medium comprising at least a recording thin film that effects a phase change between an amorphous state and a crystalline state by irradiation of a laser beam on a disk-shaped substrate, whereina phase φ1 of light reflected from a record mark in the optical information recording medium and a phase φ2 of light reflected from a non-record mark region with respect to a wavelength λ2 of the laser beam for reproducing a signal recorded on the optical information recording medium satisfy a relationship: (2n+0.7)×π<φ2−φ1<(2n+1.3)×π, where n is an integer; and an amplitude intensity I1 of light reflected from the record mark in the optical information recording medium and an amplitude intensity I2 of light reflected from the non-record mark region with respect to incident laser beam at the wavelength λ2 (nm) satisfy a relationship: I1<I2.
- 9. The optical information recording medium according to claim 8, wherein a surface of the substrate for a recording region is specular and includes no guide groove.
- 10. The optical information recording medium according to claim 8, wherein an amplitude intensity I1 of light reflected from the record mark in the optical information recording medium and an amplitude intensity I2 of light reflected from the non-record mark region with respect to incident laser beam at the wavelength λ2 (nm) satisfy a relationship:1.3<I2/I1<3.
- 11. The optical information recording medium according to claim 8, wherein the recording thin film of the optical information recording medium for the record mark is in an amorphous state, and the recording thin film of the optical information recording medium for the non-record mark region is in a crystalline state.
- 12. The optical information recording medium according to claim 8, wherein the recording thin film of the optical information recording medium for the record mark is in a crystalline state, and the recording thin film of the optical information recording medium for the non-record mark region is in an amorphous state.
- 13. The optical information recording medium according to claim 8,wherein the recording thin film comprises at least one element selected from the group consisting of rare gas elements, B, C, Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Zr, Ni, Se, Nb, Sb, Ta, W, Au, Pb and Bi, and the sum of the atomic weights of elements other than Ge and Te among these elements is not more than 10% of the sum of the atomic weights of Ge and Te.
- 14. The optical information recording medium according to claim 8,wherein a protective layer, the recording thin film, a protective layer, and a reflective layer are formed on the substrate in this order, and a thickness of the recording thin film is not more than 20 nm.
- 15. The optical information recording medium according to claim 8,wherein main elements constituting the recording thin film are Ge and Te, and a ratio in atomic weight of Ge to Te is in the range from 45:55 to 55:45.
Priority Claims (2)
Number |
Date |
Country |
Kind |
9-75409 |
Mar 1997 |
JP |
|
9-259876 |
Sep 1997 |
JP |
|
Parent Case Info
This application is a divisional of application Ser. No. 09/319,325, filed Jun. 3, 1999, now U.S. Pat. No. 6,587,620, which is a 371 of PCT/JP98/01285, filed Mar. 23, 1998, which application(s) are incorporated herein by reference.
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