1. Field of the Invention
The present invention relates to a rectifier system for a generator of a motor vehicle.
2. Description of Related Art
In the case of three-phase generators or alternators in motor vehicles in particular, B6 a.c. bridges are usually used as rectifiers. In this connection, 6 pn-semiconductor diodes made from silicon are used as rectifying elements.
Occasionally, a.c. bridges having more than 6 diodes are also used. For example, bridges having diodes connected in parallel are used in the case of very high currents. A possible system is shown as a circuit diagram in
The semiconductor diodes are usually designed as Zener diodes. This case is assumed for the two depictions in the circuit diagram. In addition to a three-phase generator and the a.c. bridge, a complete generator system also includes a voltage regulator which ensures that the rectified voltage has a specific value, for example, 14.3 V. The voltage regulator controls the excitation current of the generator. If the generator voltage exceeds the intended value, the regulator interrupts the excitation current. The excitation becomes weaker and the generator voltage drops. If the generator voltage drops below a lower setpoint value, the regulator switches the excitation current on again. The excitation current is fed to the excitation winding of the generator via sliprings. Generators having multifunction regulators draw the excitation current directly from positive terminal B+. The elements of the voltage regulator are mostly integrated monolithically into silicon.
In the starting case, the regulator switches on a pre-excitation current supplied by the battery. As soon as the generator's rotor rotates, the regulator detects a voltage signal Up on a phase connection. From its frequency, the regulator is able to derive the generator speed. When a set switch-on speed is reached, the regulator switches on the full excitation current, so that the generator begins to deliver current.
In order for the voltage regulator to detect the speed of the rotor, the alternating current portion of phase signal Up_AC must have a specific minimum voltage. In addition, direct current portion Up_DC of the phase signal may usually not exceed a certain threshold, since the evaluation circuit of the regulator frequently functions only up to a specific voltage value. Thus, minimally necessary phase alternating voltage Up_AC may be, for example, 3 volts, measured from peak to peak, and maximally occurring direct current portion Up_DC may be 8 volts.
During the pre-excitation clocking, if the generator is not yet delivering current into the electrical system, or if no rectification is taking place yet, the direct current value and the alternating voltage value of the phase voltage are influenced by the reverse currents of the rectifier diodes. In this operating state, battery voltage UB is present at terminal B+. If the same reverse currents flow through the diodes (series connection), phase voltage Up_DC=UB/2.
In this connection, it was assumed that the internal resistance of the regulator between the phase tap and ground is infinite. This is ordinarily not the case, but instead the regulator has a resistance of, for example, 1-100 kΩ between the phase tap and ground. This resistor is, for example, connected to diode D3 in parallel in the example according to
Since positive and negative diodes are each connected in series, phase voltage Up_DC changes if the positive and negative diodes are located at positions of varying temperature. In the case of high reverse currents of the positive diode, direct current portion Up_DC of the phase voltage may assume values above the maximum permissible threshold in the extreme case. The result of this is that the regulator does not detect the start speed or detects it too late and does not activate the generator or activates it only at higher speeds.
A disadvantage is that varying reverse currents of the pn-type diodes, caused, for example, by varying diode temperatures, may cause direct current portion Up_DC of the phase voltage to exceed the maximum permissible value and that the starting behavior of the generator is no longer ensured.
A generator system for a vehicle is known from U.S. Pat. No. 7,084,610 B2, in which a B6 bridge made up of Schottky diodes is used as a rectifier bridge. A Zener diode connected in the reverse direction is used for voltage limitation. It thus limits the operating voltage in relation to interferences and interference impulses originating from the generator.
The present invention has the advantage that the deficiencies of the related art described above are eliminated. In this connection, the object according to the present invention may ensure that the direct current portion of phase voltage Up_DC is reliably held at a low voltage value.
If instead of p-n rectifier diodes, rectifying elements are used whose reverse current shows practically no dependence on the reverse voltage in the range of voltages below battery voltage UB, a suitable design of the rectifier may ensure that the direct current phase voltage reliably remains below a certain threshold during the regulator's pre-excitation clocking. Suggested in particular as rectifying elements are novel Schottky diodes in which it is possible to largely suppress the voltage-dependent portion of the reverse current. The reverse saturation current is constant. Examples are trench MOS barrier junction diodes (TMBS diodes) or trench junction barrier Schottky diodes (TJBS).
A current-voltage characteristic of a reverse voltage-independent rectifier element according to the present invention similar to
In a first exemplary embodiment, TMBS diodes are used in a rectifier system according to
In another exemplary embodiment, rectifying elements having a voltage-independent reverse saturation current, for example, TMBS diodes, are used in a rectifier system; however, the thermal design of the rectifier is implemented in such a way that the negative diodes are preferably applied to the hot areas of the rectifier. Since the reverse saturation current increases with the temperature, the reverse saturation current of the negative diodes is further increased and thus phase voltage Up_DC is reliably kept at low values.
In a third exemplary embodiment, pn-type diodes are combined with rectifying elements having a voltage-independent reverse current, such as, for example, TMBS diodes. In this connection, the negative diodes of a rectifier according to
In a fourth exemplary embodiment, at least one of the diode pairs connected in parallel is replaced by a parallel connection of a pn-type and a TMBS diode in a rectifier according to
Number | Date | Country | Kind |
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10 2009 028 246 | Aug 2009 | DE | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/EP2010/058081 | 6/9/2010 | WO | 00 | 4/12/2012 |
Publishing Document | Publishing Date | Country | Kind |
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WO2011/015396 | 2/10/2011 | WO | A |
Number | Name | Date | Kind |
---|---|---|---|
5365102 | Mehrotra et al. | Nov 1994 | A |
5608616 | Umeda et al. | Mar 1997 | A |
5780996 | Kusase et al. | Jul 1998 | A |
7084610 | Chen | Aug 2006 | B2 |
7236380 | Spitz et al. | Jun 2007 | B1 |
20080122323 | Spitz et al. | May 2008 | A1 |
20090179264 | Korec et al. | Jul 2009 | A1 |
Number | Date | Country |
---|---|---|
103 17 525 | Nov 2004 | DE |
10 2004 053 761 | May 2006 | DE |
10 2004 056 663 | Jun 2006 | DE |
10 2008 055 052 | Jul 2009 | DE |
58218873 | Dec 1983 | JP |
H099522 | Jan 1997 | JP |
2008519448 | Jun 2008 | JP |
WO 2011007073 | Jan 2011 | WO |
Entry |
---|
S. M. Sze, “Physics of Semiconductor Devices,” John Wiley & Sons, New York, 1981, p. 91. |
Chen, Max et al.: High-Voltage TBS Diodes Challenge Planar Schottkys.ImPower Electronics Technology, Oct. 1, 2006. |
Mehrotra, M., Bauga, B. J.: The Trench Mos Barrier Schottky(TMBS), RectJfier.tn:IEDM, TechnicalDJQest, International, Dec. 5-8, 1993, pp. 675-678. |
Ned Mohan, Tore M. Uneland, William P. Robbins: “Power Electronics, Converters, Applications and Design—Third Edition,” 2003, John Wiley & Sons, Inc., U.S.A., XP002622055K, pp. 16-17. |
Sakai, T. et al.: “Experimental Investigation of Dependence of Electrical Characteristics on Device Parameters in Trench Mos Barrier Schottkydiodes,” Proceedings of the 10th International Symposium on Power Semiconductor Devices & IC's. ISPSD '98. Kyoto, Jun. 3-6, 1998, pp. 293-296, XP0000801083. |
Number | Date | Country | |
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20120188810 A1 | Jul 2012 | US |