Reduced drop out driver and method of using

Information

  • Patent Grant
  • 6426613
  • Patent Number
    6,426,613
  • Date Filed
    Friday, May 4, 2001
    23 years ago
  • Date Issued
    Tuesday, July 30, 2002
    22 years ago
Abstract
A driver circuit (30) is implemented within voltage regulator (10) to achieve improved dynamic performance of voltage regulator (10) while reducing the quiescent current required by driver (30). Depletion mode transistor (42) provides sufficient charge capability to the gate of transistor (34) and enhanced mode transistor (40) provides sufficient discharge capability to the gate of transistor (34). The charge and discharge capabilities of transistors (42 and 40) enables the feedback signal at node (32) to track the input voltage at terminal (IN) more effectively. Since transistor (40) is non-conductive at steady state, the quiescent current requirement of driver (30) at steady state is determined by current source (44).
Description




BACKGROUND OF THE INVENTION




The present invention relates in general to low drop out drivers and, more particularly, to low drop out drivers requiring low quiescent current with improved dynamic performance.




Most, if not all, electronic devices require some sort of power supply in order to operate. Additionally, many of the electronic devices require a regulated, Direct Current (DC) power source. The DC power source is generally derived, for example, from an Alternating Current (AC) source using a rectification circuit or from a DC power supply, such as a battery. In either case, a linear regulator is often used to supply the regulated output potential to the electronic device, using a P-Type Metal Oxide Semiconductor Field Effect Transistor (PMOSFET) to control current through a resistive ladder to ultimately provide the regulated output voltage. The driver is useful to provide high input and low output impedance which is used to isolate the regulation circuit from loading effects caused by the electronic circuit deriving power from the regulation circuit.




Some prior art drivers utilize an N-Type Metal Oxide Semiconductor Field Effect Transistor (NMOSFET) source follower in series with a constant current source to provide the gate drive voltage to the PMOS power transistor from the source terminal of the NMOSFET. The NMOSFET source follower driver provides adequate current drive to charge the gate of the PMOS power transistor, but the constant current source does not provide adequate discharging capability to turn the PMOS power transistor off in a short amount of time. Another prior art solution is to provide a constant current source in series with the NMOSFET such that the current source provides the charging current to the PMOS power transistor and the NMOSFET provides the discharging current, in which case, a slow charging current is produced with a fast discharging current. In addition, prior art drivers do not produce output voltages close enough to the top and bottom supply rails and therefore deliver poor drop out performance.




Hence, there is a need for a driver circuit which provides adequate dynamic performance in combination with low drop out operation.











BRIEF DESCRIPTION OF THE DRAWINGS





FIG. 1

is a schematic diagram illustrating a driver in combination with a linear regulator; and





FIG. 2

is a schematic diagram illustrating the driver of FIG.


1


.











DETAILED DESCRIPTION OF THE DRAWINGS




In

FIG. 1

, a schematic diagram of linear regulator


10


, operated in conjunction with driver


30


. Driver


30


provides a high impedance at terminal I and a low impedance at terminal O, to maintain the high gain of driver


30


and to reduce the capacitive effects of the gate of PMOS transistor


34


.




PMOS transistors


14


and


18


are coupled to the top rail power supply terminal via current source


12


. The drain terminal of transistor


14


is coupled to the drain and gate terminals of transistor


16


. The source terminal of transistor


16


is coupled to the bottom rail power supply terminal, for example, ground potential. The drain terminal of transistor


18


is coupled to the drain and gate terminals of transistor


20


. The source terminal of transistor


20


is coupled to the bottom rail power supply terminal. The gate terminal of transistor


16


is coupled to the gate terminal of transistor


24


. The source terminal of transistor


24


is coupled to the bottom rail power supply terminal. The drain terminal of transistor


24


is coupled to the drain and gate terminals of transistor


22


and to the gate terminal of transistor


26


. The source terminals of transistors


22


and


26


are coupled to the top rail power supply terminal. The drain terminal of transistor


26


is coupled to terminal IN of driver


30


and to the drain terminal of transistor


28


. The source terminal of transistor


28


is coupled to the bottom rail power supply terminal. Driver


30


receives operational power from both the top and bottom rail power supply terminals. The output of driver


30


is supplied to the gate terminal of transistor


34


at terminal O. The source terminal of transistor


34


is coupled to the top rail power supply terminal and the drain of transistor


34


is coupled to a first conductor of resistor


36


at terminal OUT. A second conductor of resistor


36


and a first conductor of resistor


38


are coupled together at the gate terminal of transistor


18


to form a feedback path. The second conductor of transistor


38


is coupled to the bottom rail power supply terminal.




In operation, PMOS transistor


14


receives the input voltage at terminal IN. Current supplied by current source


12


is conducted by transistors


14


and


18


in equal amounts under regulated, steady state conditions. The current conducted by transistor


14


is mirrored by the operation of transistors


16


and


24


. In other words, transistor


24


conducts an amount of current substantially equal to the current conducted by transistor


14


, due to the operation of the current mirror formed by transistors


16


and


24


. Transistor


26


, likewise, conducts an amount of current equal to the current conducted by transistor


24


, due to the current mirror operation of transistors


22


and


26


. It can be seen, therefore, that transistor


26


conducts an amount of current equal to transistor


14


under regulated, steady state conditions. Similarly, current conducted by transistor


18


is mirrored by the operation of transistors


20


and


28


. A voltage is created at terminal I by the drain terminals of transistors


26


and


28


. An output voltage of driver


30


, in response to the input voltage at terminal I, develops at terminal O to drive the gate terminal of transistor


34


. Since transistor


34


is a PMOS device, a lower voltage at the gate terminal of transistor


34


causes transistor


34


to conduct a higher amount of current and a higher voltage at the gate terminal of transistor


34


causes transistor


34


to conduct a lower amount of current. The voltage developed across resistor


38


is substantially proportional to the amount of current conducted by transistor


34


.




An increase in voltage at the gate terminal of transistor


14


causes a decrease in the amount of current conducted by transistors


24


and


26


, as discussed earlier. A decrease in the amount of current conducted by transistor


26


causes a lower potential to exist at terminal I. The output of driver


30


is lower in proportion to the voltage at the input terminal I. A lower voltage at terminal O causes an increase in current conducted by transistor


34


, which induces a larger voltage across resistor


38


. Increasing the voltage across resistor


38


creates a lower current to be conducted by transistor


18


, such that the feedback creates a voltage at the gate terminal of transistor


18


substantially equal to the gate voltage of transistor


14


. It can be seen, therefore, that the speed of operation of voltage regulator


10


is directly proportional to the ability of driver


30


to charge and discharge the capacitive gate terminal of transistor


34


.




Turning to

FIG. 2

, a schematic diagram of driver


30


is illustrated. The gate terminal of depletion mode, NMOS transistor


42


receives an input signal at terminal I. The gate terminal of enhanced mode, PMOS transistor


40


receives the input signal at terminal I. The source terminals of transistors


42


and


40


are coupled together to a first terminal of current source


44


at terminal O. A second terminal of current source


44


is coupled to the bottom supply rail, for example, ground potential. The drain terminal of transistor


42


is coupled to the top power supply rail, V


cc


.




In operation, driver


30


receives an input voltage at terminal I and produces an output voltage at terminal O in relation to the input voltage at terminal I. Transistor


42


is a depletion mode transistor, such that the source voltage of transistor


42


is allowed to increase to a voltage greater than the voltage present at the gate terminal of transistor


42


. Since the source voltage of transistor


42


is allowed to increase above the gate voltage of transistor


42


, the voltage at terminal O is allowed to be substantially equal to the top rail supply voltage V


cc


, minus the saturation voltage of transistor


42


. The threshold voltage of transistor


40


is greater than the threshold voltage of transistor


42


and therefore remains non-conductive throughout most of the dynamic range of driver


30


. Once the voltage at terminal I has decreased below the threshold voltage of transistor


40


, transistor


40


is rendered conductive and sinks available current at terminal O. Current available at terminal O, for example, is the discharging current from the capacitive gate terminal of PMOS transistor


34


, when the output voltage of regulator


10


transitions to ground potential. Transistor


40


, therefore, provides the current sink capability required to quickly discharge the gate terminal of PMOS transistor


34


. Transistor


42


, conversely, provides the current source capability required to charge the gate capacitance of PMOS transistor


34


.




A first advantage of the driver circuit of

FIG. 2

is the dynamic performance of transistors


40


and


42


required to achieve fast reaction times of the feedback signal provided at node


32


. As discussed earlier, the feedback signal present at node


32


endeavors to create a potential at the gate terminal of transistor


18


, substantially equal to the gate potential of transistor


14


. During an enable sequence of voltage regulator


10


, for example, the voltage at terminal IN increases from a voltage of 0.2 volts, for example, to the required input voltage, 1.5 volts for example, at terminal IN. The amount of current conducted by transistor


14


decreases, causing the amount of current conducted by transistor


16


to decrease. A decrease in the amount of current conducted by transistor


16


is mirrored by a decrease in the amount of current conducted by transistor


24


. A decrease in the amount of current conducted by transistor


24


, induces a decrease in the amount of current conducted by transistor


22


and also causes a decrease in the amount of current conducted by transistor


26


. A decrease in the amount of current conducted by transistor


26


causes a decrease in the voltage at terminal I. Provided that the voltage at terminal I decreases below the threshold voltage of transistor


40


, transistor


40


transitions to a conductive state. Once transistor


40


becomes conductive, the source terminal of transistor


40


achieves a potential substantially equal to the bottom rail power supply terminal, for example, ground potential plus the gate to source voltage of transistor


40


. The ability of transistor


40


to conduct, or discharge, the charge existing on the gate terminal of transistor


34


, allows driver


30


to quickly render transistor


34


conductive. As current flows through transistor


34


, a voltage develops across resistors


36


and


38


, which sets the feedback voltage at node


32


equal to the level of voltage present at terminal IN. The speed at which voltage regulator


10


achieves steady state output voltage at terminal OUT is therefore directly proportional to the discharging capability of transistor


40


.




A second advantage of driver


30


is shown by the low quiescent current requirements of driver


30


. The steady state quiescent current required by driver


30


is given only by the current conducted by current source


44


. At steady state, transistor


40


is non-conductive and transistor


42


conducts a quiescent current substantially equal to the amount of current provided by current source


44


. As described above, transistor


40


becomes conductive during a decrease in voltage at terminal I, sufficiently below the threshold voltage of transistor


40


and serves only to discharge the gate charge of transistor


34


.




In summary, a low quiescent current voltage regulator is presented which provides improved dynamic performance. Charging and discharging transistors are provided by driver


30


to effectively charge and discharge the gate charge of transistor


34


, which increases the speed at which the feedback voltage at node


32


equalizes the voltage at the gate terminal of transistor


18


to the voltage at the gate terminal of transistor


14


. In addition, quiescent current is reduced since transistor


40


is rendered non-conductive at steady state, causing the steady state quiescent current required by driver


30


to be substantially equal to current source


44


.



Claims
  • 1. In a voltage regulation circuit, a driver circuit providing a drive signal in response to a feedback signal, the driver circuit comprising:a depletion mode transistor having a control terminal coupled to receive a control signal in response to the feedback signal and having a first conductor coupled to provide a charging signal at a first node; and a p-channel transistor having a control terminal coupled to receive the control signal and having a first conductor coupled to provide a discharging signal at the first node.
  • 2. The driver circuit of claim 1 wherein the depletion mode transistor has a first conductor coupled to a first power supply conductor, a second conductor coupled to the first node and a control terminal coupled to receive the control signal.
  • 3. The driver circuit of claim 2 wherein the depletion mode transistor includes an n-type field effect transistor.
  • 4. A driver circuit, comprising:a depletion mode transistor having a control input coupled to receive a control signal, a first conductor coupled to receive a first supply potential and a second conductor coupled to provide a charging signal at an output node for all values of the control signal; and a p-channel enhanced mode transistor having a control input coupled to receive the control signal, a first conductor coupled to receive a second supply potential and a second conductor coupled to provide a discharging signal at the output node for values of the control signal below a predetermined threshold value.
  • 5. The driver circuit of claim 4 wherein the depletion mode transistor includes an n-type field effect transistor.
  • 6. A method of providing a drive signal to operate a voltage regulator between first and second output levels, comprising:driving a depletion mode transistor with a feedback signal to produce a charging signal; and turning on a p-channel enhanced mode transistor with the feedback signal to produce a discharging signal.
  • 7. The method of claim 6 wherein the step of turning on comprises:maintaining a non-conductive state of the p-channel enhanced mode transistor for values of the feedback signal below a predetermined threshold; and establishing a conductive state of the enhanced mode transistor for values of the feedback signal above the predetermined threshold.
US Referenced Citations (4)
Number Name Date Kind
4071783 Knepper Jan 1978 A
4613809 Skovmand Sep 1986 A
5162668 Chen et al. Nov 1992 A
5686821 Brokaw Nov 1997 A