Number | Name | Date | Kind |
---|---|---|---|
5185284 | Motonami | Feb 1993 | |
5234856 | Gonzalez | Aug 1993 | |
5334547 | Nakamura | Aug 1994 | |
5543348 | Hammerl et al. | Aug 1996 | |
5741738 | Mandelman et al. | Apr 1998 |
Entry |
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L. Nesbit et al., A 0.6 micron 2 256Mb Trench DRAM Cell with Self-Aligned BuriEd STap (BEST), IEDM 93-627, 1993. |
S. Wolf et al., Silicon Processing for the VLSI Era, vol. 1, Lattice Press, p. 541, 1986. |
S. Wolf, Silicon Processing for the VLSI Era, vol. 2, Lattice Press, pp. 18, 19, 301, 331, 333, and 661, 1990. |
K. Ng, Complete Guide to Semiconductor Devices, McGraw-Hill, Inc., pp. 4, 164, and 165, 1995. |