Elasto-capillary coalescence of high aspect ratio structures is a phenomenon that has long existed in nature and artificial systems. Surface tension can induce forces on wetted nanostructures, such as vertically oriented nanowire arrays, that can force the nanostructures to aggregate when dried. This aggregation can result in decreased homogeneity and surface area of the array, which often inhibits the intended application.
Many aspects of the present disclosure can be better understood with reference to the following drawings. The components in the drawings are not necessarily to scale, emphasis instead being placed upon clearly illustrating the principles of the present disclosure. Moreover, in the drawings, like reference numerals designate corresponding parts throughout the several views.
Disclosed herein are various embodiments of methods related to reducing elasto-capillary coalescence of nanostructures. Reference will now be made in detail to the description of the embodiments as illustrated in the drawings, wherein like reference numbers indicate like parts throughout the several views.
Elasto-capillary coalescence refers to the aggregation of wetted nanostructures as the nanostructures dry. Elasto-capillary coalescence can decrease the homogeneity, surface area, and functionality of nanostructures. The various embodiments described herein concern applying electrical fields to the wetted nanostructures to cause them to repel each other in order to prevent the nanostructures from aggregating as they dry. Specifically, the aggregation forces are reduced by introducing small electric fields during drying, resulting in a technique that is applicable to a broad range of nanostructure materials, cross-sectional areas, lengths, and spacing.
For instance, when nanowires, which are an example of high aspect ratio nanostructures, are formed in porous templates, such as anodic aluminum oxide (AAO) or self-assembled block copolymers, the template must be removed with a liquid etchant to obtain a freestanding array of wet nanowires. When the array is dense and the nanowires have a high aspect ratio, the surface tension between the residual fluid film and nanowires leads to aggregation as the wet nanowires dry. However, by introducing small electric fields during drying, as will be discussed below, the elasto-capillary coalescence of the nanowires can be reduced or eliminated.
The dynamics of aggregation for nanostructures induced by surface tension is quite complex. Aggregation involves many factors, including the periodicity, dimensions, separation distance, and tensile strength of the material(s) of the nanostructures, as well as the evaporation rate and the surface tension of the fluid. The tendency for the nanostructures to aggregate during drying is only sufficiently reduced in the cases where no fluid-solid meniscus is present, fluids with zero surface tension, or the case where the nanostructure is stiff enough to overcome aggregation forces. Currently, supercritical fluid drying (near zero surface tension fluid) can inhibit the aggregation of nanostructures by surface tension. Even though drying nanostructures in supercritical fluids is an effective way to prevent aggregation, the process relies on high-pressure vessels, is restricted to batch-type processes with limited throughput, and is energy-intensive.
With reference to
A plurality of nanostructures 110, forming an array 120, may be fabricated directly onto or positioned onto the electrode 102. The nanostructures 110 are wetted by a fluid 130 to prevent elasto-capillary coalescence. The nanostructures 110 are wet to the extent that a meniscus 131 is present in the fluid 130 between a nanostructure 110 and a neighboring nanostructure 110. In some embodiments, the nanostructures 110 are wet to the extent that the meniscus 131 is located near the top of the nanostructure 110 and neighboring nanostructure 110. The nanostructures 110 may include thin fin structures, micro-electro mechanical systems (MEMS), nanopillars, nanowires, and/or other nanostructures. In the embodiment illustrated in
The counter electrode 104 is positioned at a working distance D opposite the nanostructures 110 on the electrode 102. The electrode 102 and counter electrode 104 are each sized and dimensioned to provide an electrical field between the counter electrode and nanostructures 110. The fluid 130 wetting the nanostructures 110 dries so that air is the medium that separates nanostructures 110 and counter electrode 104. Before any elasto-capillary coalescence of the nanostructures 110 occurs, a voltage is applied by the voltage source 106.
The electrode 102 and/or the counter electrode 104 may be constructed of a conductive material. In some embodiments, the electrode 102 and/or the counter electrode 104 includes a transparent conductive material such as a tin-doped indium oxide (ITO) or fluorine-doped tin oxide (FTO) substrate. In other embodiments, the electrode 102 and/or the counter electrode 104 may be constructed of materials such as Pt, Pd, Ag, Au, Cu, C, Si, Ge, Ti, Cr, another conductive material, and/or alloys thereof.
The nanostructures 110 may be composed of any material as long as sufficient electric field induced surface charging will occur. In some embodiments, the nanostructures 110 are composed of metallic compounds, such as Au, Ag, Ni, Pt, Pd, C, Cu, and/or another metallic compound. In other embodiments, the nanostructures 110 are composed of semiconducting materials, including Group IV semiconductors, such as Si, Ge, Group III/V semiconductors, such as GaAs, InAs, GaN, and InP, Group II/VI semiconductors, such as CdSe, ZnS, and CdTe, and Group IV/VI semiconductors, such as PbSe, PbTe, and SnTe. In other embodiments, the nanostructures 110 are composed of oxides, such as TiO2, SiO2, Al2O3, Nb2O5, HfO2, MgO, Y2O3, ZrO2, ZnO, and SnO2. In other embodiments, the nanostructures 110 are composed of polymers, such as polythiophene, polyacetylene, polypyrrole, polyaniline, and polyphenylene sulfide. In some embodiments, the nanostructures 110 are compound nanostructures including one or more sub-structures and/or one or more material(s). For example, referring to the embodiment illustrated in
In some embodiments, the nanostructures 110 have been made wet by a fluid 130 such as de-ionized water. In other embodiments, the nanostructures 110 have been made wet by other fluids 130 such as organic solvents, salt solutions, or acids.
Referring next to
Referring now to
Referring next to
The light source 540 transmits light through the electrode 102 and illuminates the nanostructures 110. The vessel 302 is oriented using the rotational stage 560 such that the incident light 542 is parallel to the orientation of the nanostructures 110 to maximize initial light transmittance. The light interacting with the nanostructures 110 is either transmitted, scattered, reflected, or absorbed by the material(s) of the nanostructures 110, the electrodes 102 and 104, the material of the vessel 302, and/or the fluid 130. At least a portion of the light that passes through the nanostructures 110 also passes through the counter electrode 104. The light 544 is then received by a spectrophotometer 550 that performs a spectral analysis on the received light 544. In some embodiments, the spectrophotometer 550 includes the light source 540 and/or is configured to receive the vessel 302 as well. The degree of aggregation can be quantified by monitoring the relative decrease of light transmitted through the nanostructure array 120.
Referring to
Neglecting the short-range van der Waals attractive forces between the nanostructures 110a and 110b, a force balance is depicted in
ΣF=Fst−Felas−Fesr EQN (1)
If the sum of the forces is positive, then the nanostructure 110a bends until the forces balance, resulting in either permanent or non-permanent nanostructure 110 aggregation. Maximum bending torque occurs when the meniscus 131 is at the top of the nanostructures 110 or at the beginning of the drying process. In nanostructures 110 composed of nanowires, the meniscus height is related to the nanowire radius with smaller nanowire radii exhibiting a higher degree of wetting. Thus, the aggregation force due to surface tension becomes greater for nanowires with a smaller diameter.
The electrode 102 and the counter electrode 104 are separated by a distance, D. In a material with relative permittivity, εr, and an applied bias, V, between the electrode 102 and the counter electrode 104, a charge builds on the nanostructures 110. The charges on the nanostructures 110 provide an electrostatic repulsive force, Fesr, between adjacent structures (e.g., between nanostructures 110a and 110b). The force is dependent upon the spacing between the nanostructures 110. However, the tips come in closer proximity to each other as the nanostructures 110 deflect, thereby increasing the electrostatic repulsive force Fesr.
Aggregation is also partially mitigated by changes in liquid-air surface tension due to the electric field (i.e., the liquid-air surface tension changes as charge builds up on the nanostructure 110 surface). However, in most embodiments, the changes in the force due to surface tension, Fst, from the electric field is minor in comparison to the electrostatic repulsion force, Fesr.
Referring now to
A critical nanostructure length, Lc, is the length at which the force due to surface tension, Fst, and the elastic bending force, Felas, balance. In other words, in
The application of a small electric field, ξo, provides additional electrostatic repulsive forces, Fesr, resulting in a new critical nanostructure length Lc(ξo), as seen in
Turning now to
In block 805, an electrode 102 and a counter electrode 104 positioned opposite the electrode 102 are provided. In block 810, a plurality of wet nanostructures 110 are positioned on the electrode 102. The nanostructures 110 may be wetted with a fluid 130, such as water. The counter electrode 104 is positioned in air opposite the wet nanostructures 110. In block 815, an electric field is applied between the electrode 102 and the counter electrode 104 using a voltage source 106. This electric field reduces aggregation of the nanostructures 110. In some embodiments, the electric field may be applied again if subsequent processing is likely to increase the aggregation of the nanostructures. In that case, the electric field would be again applied to the nanostructures while they are wetted by a fluid.
Turning next to
In block 905, a nanowire (or nanostructure) template is fabricated. In the example of
In block 910, a plurality of nanowires is formed. For example, the nanowires may be formed by electrochemically depositing a nanowire material, such as gold or other appropriate material, from a solution onto the exposed ITO layer within the pores of the AAO template. Referring to
In block 915, the nanowire template is removed from the nanowires. For example, in some embodiments, the formed nanowires are rinsed with de-ionized water and then placed in about 25 wt % phosphoric acid for about 1-2 hours to facilitate the selective removal of the alumina template from the nanowires. A freestanding array of vertical nanowires are then removed from the acid solution.
In block 920, the nanowires are rinsed using a fluid 130. For example, in some embodiments, the nanowires are rinsed by immersion in a fluid 130, such as deionized water and subsequently placed in fresh de-ionized water for storage. The nanowires may be stored in the fluid 130 to prevent nanowire aggregation.
Referring to
In block 930, an electric field is applied between the nanowires and the counter electrode 104 using a voltage source 106. The electric field may be adjusted by varying either the applied voltage or working distance (D). In some embodiments, the applied voltage may range from about 0 to about 10 V. In some embodiments, the voltage is applied just after the nanowires are wetted or the fluid 130 was drained from the elasto-capillary coalescence reduction apparatus 100 (e.g., within about 5 seconds).
The voltage bias between the nanowires on the electrode 102 and counter-electrode 104 builds a capacitance layer on each nanowire, providing Coulombic repulsion while drying. The repulsion counteracts the surface tension forces, separating the nanowires and reducing elasto-capillary coalescence.
In block 935, the nanowires may be illuminated by a light source 540 (
In block 940, the degree of aggregation of the nanowires is detected. In some embodiments, the degree of aggregation is detected using spectral analysis. For example, in some embodiments, an elasto-capillary coalescence reduction apparatus 100, such as the one illustrated in
Turning now to
Referring next to
Referring to curve 1003 of
As the nanowires bend towards each other, less light can pass through the nanowire array. Therefore, a fractional change in transmitted light 544 is related to the nanowire aggregation density, while the slope of the transmittance curve 1003 is related to the rate of nanowire aggregation and the evaporation rate, which is a function of room temperature and humidity. The transmittance falls to a minimum value 1003a corresponding to the point of maximum nanowire aggregation. At this point, a small layer of fluid 130 likely coats each nanowire. As the fluid 130 evaporates, the transmittance slightly increases to a plateau region that remains significantly below the initial transmittance. This permanent drop in transmittance is due to irreversible nanowire aggregation. The nanowires that remain aggregated 1021 after this relaxation are either plastically deformed or the bending force is balanced by van der Waals forces or the surface energy of the nanowire material.
Referring to curves 1006, 1009, and 1012,
Electric fields as low as about 102 V/m inhibit the aggregation of nanowires when dried in a fluid 130, such as water, providing an economical, generalized, and scalable approach to prevent the aggregation of nanowires on large-area substrates. The aggregation process can also be observed with optical transmission through the nanowire array using a spectrophotometer 550. These results show that aggregation significantly decreases light transmission through the array of nanowires. When electric fields are applied, only minor changes to the transmission are observed during the drying process, confirming that the nanowires remain separated while drying.
In some embodiments, ultrahigh-density arrays of nanostructures (e.g., nanowires) can be fabricated, for use in sensors, catalytic beds, and renewable energy devices, such as solar cells, thermoelectrics, batteries, and ultracapadtors. In these applications, available surface area can directly affect the performance of the device. Thus, the ability to reduce elasto-capillary coalescence of nanostructures increases the surface area, thereby providing significant benefits to these applications. For example, nanowire arrays have better charge transport that makes them advantageous for many energy storage and generation applications. However, the performance of nanowire arrays in solar cells typically falls short of expectations due to a lack of surface area. In many photovoltaic and charge storage applications, the surface area either defines the amount of electrons that are transferred or the amount of charge stored. An improvement in the density of nanowires and, consequently, the surface area of the nanowire array can result in improved conversion efficiency.
It should be noted that ratios, concentrations, amounts, and other numerical data may be expressed herein in a range format. It is to be understood that such a range format is used for convenience and brevity, and thus, should be interpreted in a flexible manner to include not only the numerical values explicitly recited as the limits of the range, but also to include all the individual numerical values or sub-ranges encompassed within that range as if each numerical value and sub-range is explicitly recited. To illustrate, a concentration range of “about 0.1% to about 5%” should be interpreted to include not only the explicitly recited concentration of about 0.1 wt % to about 5 wt %, but also include individual concentrations (e.g., 1%, 2%, 3%, and 4%) and the sub-ranges (e.g., 0.5%, 1.1%, 2.2%, 3.3%, and 4.4%) within the indicated range. The term “about” can include traditional rounding according to significant figures of numerical values. In addition, the phrase “about ‘x’ to ‘y’” includes “about ‘x’ to about ‘y’”.
It should be emphasized that the above-described embodiments of the present disclosure are merely possible examples of implementations set forth for a clear understanding of the principles of the disclosure. Many variations and modifications may be made to the above-described embodiment(s) without departing substantially from the spirit and principles of the disclosure. All such modifications and variations are intended to be included herein within the scope of this disclosure and protected by the following claims.
This application claims priority to copending U.S. provisional application entitled “REDUCING ELASTO-CAPILLARY COALESCENCE OF NANOSTRUCTURES WITH APPLIED ELECTRICAL FIELDS” having Ser. No. 61/319,025, filed Mar. 30, 2010, the entirety of which is hereby incorporated by reference.
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/US11/30438 | 3/30/2011 | WO | 00 | 9/26/2012 |
Number | Date | Country | |
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61319025 | Mar 2010 | US |