Claims
- 1. An ion sensor comprising an electrically conductive substrate, and redox function film formed by a neutral atom beam sputtering process on a surface of said substrate and an ion-sensitive film covering said redox function film.
- 2. An ion sensor comprising a gate insulation film of a MOS field-effect transistor, and a redox function film formed by a neutral atom beam sputtering process on a surface of said gate insulation film and an ion-sensitive film covering said redox function film.
- 3. A method of manufacturing an ion sensor comprising a step of forming a target of a redox function substance on a predetermined substrate surface, a step of sputtering said target by projecting a neutral atom beam onto said redox function substance to thereby form a redox function film on said substrate surface and a step of forming an ion-sensitive film on a surface of said redox function film.
- 4. An ion sensor comprising:
- an electrically conductive first substrate;
- a redox function film formed on a surface of said first substrate by preparing a film formed on a second electrically conductive substrate by an electrolytic polymerization process, and then sputtering the electrolytically polymerized film as a target by a neutral atom beam, thereby depositing sputtered particles on the surface of said first substrate; and
- an ion-sensitive film covering said redox function film.
- 5. An ion sensor comprising:
- a gate insulation film of a MOS filed effect transistor;
- a redox function film formed on a surface of said gate insulation film by preparing a film formed on a predetermined substrate by an electrolytic polymerization process, and then sputtering the electrolytically polymerized film as a target by a neutral atom beam, thereby depositing sputtered particles on the surface of said gate insulation film; and
- an ion-sensitive film covering said redox function film.
Priority Claims (3)
Number |
Date |
Country |
Kind |
63-271784 |
Oct 1988 |
JPX |
|
1-28464 |
Feb 1989 |
JPX |
|
1-84551 |
Apr 1989 |
JPX |
|
Parent Case Info
This application is a divisional of application Ser. No. 07/426,713, filed Oct. 26, 1989, now U.S. Pat. No. 5,066,383.
US Referenced Citations (18)
Foreign Referenced Citations (3)
Number |
Date |
Country |
186286 |
Feb 1986 |
EPX |
2190399 |
Nov 1987 |
GBX |
WO8904959 |
Jun 1989 |
WOX |
Non-Patent Literature Citations (2)
Entry |
Patent Abstracts of Japan, vol. 11, No. 276, Sep. 1987. |
Patent Abstracts of Japan, vol. 12, No. 388, Oct. 1988. |
Divisions (1)
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Number |
Date |
Country |
Parent |
426713 |
Oct 1989 |
|