The present disclosure relates to the technical field of integrated circuits, and in particular to a reference source circuit, a chip, a power supply and an electronic apparatus.
A bandgap reference source, which is used as a basic module in an integrated circuit system, is configured to generate a voltage reference or a current reference independent of a power supply and a temperature. At present, the bandgap reference source commonly used inside a chip is a single bandgap voltage source or bandgap current source. Because a resistance in a semiconductor process usually has a certain temperature coefficient, it is difficult to simultaneously achieve the bandgap voltage source and the bandgap current source in the related art. Consequently, it is necessary to prepare two separate circuits, which causes high cost and wastes an area of a chip.
In view of the foregoing, the present disclosure provides a reference source circuit, comprising:
In a possible embodiment, the reference voltage generating unit comprises a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a first resistor, a second resistor, a third resistor, a first capacitor, and a second capacitor, wherein,
In a possible embodiment, the first current generating unit comprises a fourth resistor, a fifth resistor, a sixth transistor, and a seventh transistor, wherein,
In a possible embodiment, the reference current generating unit comprises the second transistor, the fourth transistor, an eighth transistor, a ninth transistor, a tenth transistor, an eleventh transistor, a twelfth transistor, a thirteenth transistor, a fifth capacitor, a sixth resistor, a seventh resistor, and an eighth resistor, wherein,
In a possible embodiment, a resistance value of the third resistor is equal to a resistance value of the parallelly-connected fourth resistor and fifth resistor, and a resistance value of the fourth resistor is equal to a resistance value of the seventh resistor.
According to another aspect of the present disclosure, there is provided a chip, comprising:
According to another aspect of the present disclosure, there is provided a power supply, comprising:
According to another aspect of the present disclosure, there is provided an electronic apparatus, comprising:
With the above circuit, it is possible to generate the bandgap reference voltage and the bandgap reference current in one reference source circuit, and multiplex the first current generating unit according to the embodiments of the present disclosure, which can achieve a high gain and a simultaneous operation of double loops, thereby saving the cost. Compared with the related art in which two separate reference sources are provided, the present disclosure can save the area of the chip.
Other features and aspects of the present disclosure will become apparent from the following detailed description of exemplary embodiments with reference to the accompanying drawings.
The drawings, which are incorporated in and constitute a part of the specification, illustrate exemplary embodiments, features and aspects of the present disclosure together with the specification, and serve to explain the principles of the present disclosure.
Hereinafter, various exemplary embodiments, features and aspects of the present disclosure will be described in detail with reference to the drawings. In the drawings, the same reference numerals refer to elements with the same or similar functions. Although various aspects of the embodiments are shown in the drawings, the drawings are not necessarily drawn to scale unless otherwise specified.
The special word “exemplary” here means “serving as an example, embodiment or illustration”. Any embodiment described herein as “exemplary” need not be interpreted as superior to or better than other embodiments.
In addition, in order to better describe the present disclosure, numerous details are provided in the following embodiments. It is understood by those skilled in the art that the present disclosure can also be implemented without certain details. In some embodiments, methods, means, elements and circuits well known to those skilled in the art are not elaborated in order to highlight the main idea of the present disclosure.
Please refer to
As shown in
With the above circuit, it is possible to generate the bandgap reference voltage and the bandgap reference current in one reference source circuit, and multiplex the first current generating unit according to the embodiment of the present disclosure, which can achieve a high gain and a simultaneous operation of double loops, thereby saving the cost. Compared with the related art in which two separate reference sources are provided, the present disclosure can save the area of the chip.
The reference source circuit can be provided in an electronic device. The electronic device can also be referred to as a mobile device, which can refer to various forms of an access mobile device, a user unit, a user device, a user station, a Mobile Station (MS), a remote station, a remote mobile device, a mobile device, a user mobile device, a terminal equipment, a wireless communication device, a user agent or a user apparatus. The user device can also be a cellular phone, a cordless phone, a Session Initiation Protocol (SIP) phone, a Wireless Local Loop (WLL) station, a Personal Digital Assistant (PDA), a handheld device with a wireless communication function, a computing device, other processing devices connected to a wireless modem, a vehicle-mounted device, a wearable device, a user device in future 5G network, or a mobile device in future evolved Public Land Mobile Network (PLMN), etc., which is not limited by the embodiments of the present disclosure.
The following describes the possible implementation of various units in the reference source circuit.
Please refer to
In a possible embodiment, as shown in
It should be noted that the embodiments of the present disclosure do not limit the specific implementation of the startup circuit, and those skilled in the art can refer to relevant art to implement the startup circuit.
In an embodiment, when the bandgap reference voltage and the bandgap reference current need to be generated, the startup circuit may output a startup signal to start the reference source circuit to generate the bandgap reference voltage and the bandgap reference current.
In an embodiment, the startup signal may be a pulse signal.
In a possible embodiment, the first current generating unit may generate a current proportional to absolute temperature (PTAT), that is, the first current may be a PTAT current.
In a possible embodiment, as shown in
In an embodiment, the magnitude of the first current may be:
where R4 represents a resistance value of the fourth resistor R4, R5 represents a resistance value of the fifth resistor R5, and VT represents a voltage equivalent of temperature, where VT=kT/q, where k is Boltzmann constant (1.38×10−23 J/K), T is a thermodynamic temperature, namely, an absolute temperature, and q is an electron charge (1.6×10−19 C). At normal temperature, VT≈26 mV.
In a possible embodiment, both the sixth transistor Q6 and the seventh transistor Q7 may be triodes, and a ratio of the number of the sixth transistors Q6 to the number of the seventh transistors Q7 may be 1: n, where n is an integer greater than 1. Of course, the above ratio is not limited in the present disclosure, and can be determined by those skilled in the art as required.
In a possible embodiment, as shown in
can be obtained from
where “·” means a multiplication operation, “∥” means a parallel connection, “+” means an addition operation, VBE represents a base-emitter voltage of the sixth transistor, VBE is a negative temperature coefficient, R1 represents a resistance value of the first resistor, R4 represents a resistance value of the fourth resistor, R5 represents a resistance value of the fifth resistor, VT represents a voltage equivalent of temperature, VT is a positive temperature coefficient, and n represents a ratio of the number of the seventh transistors to the number of the sixth transistors.
According to the embodiment of the present disclosure, a zero-temperature coefficient of the bandgap reference voltage VBG can be achieved by setting the resistance values of the first resistor R1, the fourth resistor R4 and the fifth resistor R5. Of course, the specific resistance values of the first resistor R1, the fourth resistor R4 and the fifth resistor R5 are not limited in the present disclosure, and can be determined by those skilled in the art according to the actual situation.
In a possible embodiment, as shown in
In a possible embodiment, the eighth transistor Q8, the tenth transistor Q10, the twelfth transistor Q12 and the thirteenth transistor Q13 may be MOSFET, and both the ninth transistor Q9 and the eleventh transistor Q11 may be triodes.
In an embodiment, the first transistor Q1, the second transistor Q2, the third transistor Q3, the fourth transistor Q4, and the fifth transistor Q5 constitute an operational amplifier in the reference voltage generating unit, whose operational amplifier gain is about A1=gm4·(ro3∥ro5), where ro3 represents a drain-source small signal output impedance of the third transistor Q3, ro5 represents a drain-source small signal output impedance of the fifth transistor Q5, and gm4 represents a transconductance of the fourth transistor Q4, which is equal to transconductance of the fifth transistor Q5 and the ninth transistor Q9. As can be clear from the above, the reference voltage generating unit is a voltage series negative feedback, and the voltage closed-loop output impedance is 1/A1 times of the open-loop output impedance, so the driving force of the output bandgap reference voltage is higher.
In an embodiment, the second transistor Q2, the fourth transistor Q4, the eighth transistor Q8, the ninth transistor Q9, and the tenth transistor Q10 constitute an operational amplifier of the reference current generating unit, whose operational amplifier gain is about A2=gm4·(ro8∥ro9), where ro8 represents a drain-source small signal output impedance of the eighth transistor Q8, and ro9 represents a drain-source small signal output impedance of the ninth transistor Q9. As can be clear from the above, the reference current generating unit is a current series negative feedback, and the current closed-loop output impedance is A2 times of the open-loop output impedance.
According to the embodiment of the present disclosure, the reference voltage generating unit and the reference current generating unit can generate two types of bandgap references (a bandgap reference voltage and a bandgap reference current) in one circuit by sharing the first current generating unit 10 and sharing the second transistor Q2 and the fourth transistor Q4. Compared with the related art which does not use an operational amplifier to achieve the reference source, the embodiment of the present disclosure can achieve a high gain and a simultaneous operation of double loops via dual operational amplifier loops, which takes a low cost and occupies a less layout area. In addition, according to the reference source circuit in the embodiments of the present disclosure, the driving force of the bandgap reference voltage is higher, and the output impedance of the bandgap reference current is larger, which is beneficial to improving the work efficiency.
As shown in
Therefore,
can be obtained, where VBE represents a base-emitter voltage of the sixth transistor Q6, VBE is a negative temperature coefficient, R8 represents a resistance value of the eighth resistor R8, R4 represents a resistance value of the fourth resistor R4, R5 represents a resistance value of the fifth resistor R5, VT represents a voltage equivalent of temperature, VT is a positive temperature coefficient, and n represents a ratio of the number of the seventh transistors to the number of the sixth transistors.
According to the embodiments of the present disclosure, a zero-temperature coefficient of the bandgap reference current IBG can be achieved by adjusting the resistance values of both the eight resistor R8 and the fourth resistor R4.
Of course, the specific resistance values of the eighth resistor R8 and the fourth resistor R4 are not limited in the embodiments of the present disclosure, and can be determined by those skilled in the art according to the actual situation.
In a possible embodiment, the third resistor R3, the fourth resistor R4, the fifth resistor R5 and the seventh resistor R7 can be configured to satisfy the following relationship, so as to better output the bandgap reference voltage and the bandgap reference current in the embodiment of the present disclosure:
With the above circuit, it is possible to simultaneously generate the bandgap reference current and the bandgap reference voltage with a zero-temperature coefficient in one circuit according to the embodiment of the present disclosure, which has a lower cost and occupies a smaller layout area compared with related art and thus is beneficial to popularization and utilization.
Although the embodiments of the present disclosure have been described above, it will be appreciated that the above descriptions are merely exemplary, but not exhaustive; and that the disclosed embodiments are not limiting. A number of variations and modifications may occur to one skilled in the art without departing from the scopes and spirits of the described embodiments. The terms in the present disclosure are selected to provide the best explanation on the principles and practical applications of the embodiments and the technical improvements to the arts on market, or to make the embodiments described herein understandable to one skilled in the art.
Number | Date | Country | Kind |
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201911252891.9 | Dec 2019 | CN | national |
This application is a continuation application of International Application No. PCT/CN2020/132741, filed on Nov. 30, 2020, which claims priority to Chinese application No. 201911252891.9 filed on Dec. 9, 2019, both of which are incorporated by reference herein.
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Number | Date | Country | |
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Number | Date | Country | |
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Parent | PCT/CN2020/132741 | Nov 2020 | WO |
Child | 17727687 | US |