1. Technical Field
The present invention relates to radio-frequency phase shifters and more particularly to phase shifters operating at millimeter-wave frequencies for integrated phased arrays systems.
2. Description of the Related Art
Phase sifters and phased arrays are now presented in a context which illustrates their requirements for monolithic integration and the existing implementations. Phased Array Systems: Phased array transceivers are a class of multiple antenna systems that achieve spatial selectivity through control of the time delay differences between successive antenna signal paths. A change in this delay difference modifies the direction in which the transmitted/received signals add coherently, thus “steering” the electromagnetic beam. The integration of phased-arrays in silicon-based technologies has aroused great interest in recent times due to potential applications in high-speed wireless communication systems and radar.
There are several prominent commercial applications of phased arrays at millimeter-wave frequencies. The 7 GHz Industrial, Scientific and Medical (ISM) band at 60 GHz is currently being widely investigated for indoor, multi-gigabit per second Wireless Personal Area Networks (WPANs). In such an application, the line-of-sight link between the transmitter and receiver can easily be broken due to obstacles in the path. Phased arrays can harness reflections off the walls due to their beam-steering capability, thus allowing the link to be restored.
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The phased array factor is a function of the angle of incidence (θ) and the array's progressive delay difference (τ), and hence reflects the spatial selectivity of the array. The beam-pointing direction θm is the incident angle corresponding to maximum power gain.
An integrated reflective-type differential phase shifter includes a vertical coupled line hybrid and inductive-capacitive (LC) resonant loads. The hybrid coupler includes differential coplanar striplines (CPS) placed one on top of the other using different metal layers so that the coupling occurs vertically. This reduces the employed area and allows an easier differential implementation. The widths of the CPS are not identical, this feature allows more flexibility to set their characteristic impedances. At a lower metal level (e.g. M1), metal strips are placed orthogonally with respect to the CPS as shielding to reduce the substrate loss. These metal strips are also designed to reduce the wave propagation speed in the CPS and reduce the overall size of the coupler. The reflective load terminations for the hybrid coupler are implemented with a parallel resonant LC circuit. The inductor sets the imaginary part of the reflective load impedance to a value where a change in capacitance yields a larger change in phase for the overall phase shifter. This structure is suitable for mmWave as the capacitive parasitic of the inductor can be absorbed into the shunt inductor value. The implementation features are suitable for integration in SiGe and CMOS technologies, and operation at mmWave frequencies.
In a differential embodiment. A hybrid coupler having differential coplanar striplines (CPS) placed one on top of the other using different metal layers so that the coupling occurs vertically is included. This reduces the employed area and allows an easier differential implementation. The widths of the CPS are not identical. This feature allows more flexibility to set their characteristic impedances. At a lower metal level (e.g. M1), metal strips are placed orthogonally with respect to the CPS as shielding to reduce the substrate loss. These metal strips are also designed to reduce the wave propagation speed in the CPS and reduce the overall size of the coupler.
In a single-ended embodiment: The coupler includes coupled lines placed over/under metal strips that are orthogonal to the coupled lines. The strips shield and improve coupling, isolation with smaller coupler size and higher characteristic impedance.
A method for phase shifting a transmitted signal includes distributing a signal to one or more antennae, phase shifting the signal by an amount dependent on a phase shifter associated with each antennae, the phase shifter including a hybrid coupler being ground shielded and reflective terminations connected to the hybrid coupler, wherein the reflective terminations include a parallel LC circuit and transmitting the phase shifted signals from the one or more antennae to provide spatial selectivity through phase shifted differences.
These and other features and advantages will become apparent from the following detailed description of illustrative embodiments thereof, which is to be read in connection with the accompanying drawings.
The disclosure will provide details in the following description of preferred embodiments with reference to the following figures wherein:
In accordance with the present principles, a ground-shielded coupled-line coupler is integrated with LC parallel resonant reflective loads to form a Reflection-type Phase Shifter (RTPS) which is suitable for a silicon implementation and operation at mmWave frequencies. Both, single-ended and differential embodiments are considered. A coupled-line coupler is chosen to provide a wider bandwidth of operation over other alternatives (e.g. branch-line coupler). Even mode and odd mode impedances that can be obtained with this coupler in an integrated implementation are adequate for a Reflection-type Phase Shifter (RTPS) at mmWave frequencies. In the differential case, the coupler in one embodiment includes differential coplanar striplines (CPS) placed one on top of the other using different metal layers so that the coupling occurs vertically. This reduces the employed area and permits an easier differential implementation. In the single-ended case, the coupler in accordance with one embodiment includes coupled lines placed over/tinder metal strips that are orthogonal to the coupled lines. The strips shield and improve coupling isolation with smaller coupler size and higher characteristic impedance.
In other embodiments, the reflective load terminations for a hybrid coupler in both, the single-ended and the differential embodiments, are implemented with a parallel resonant LC circuit. The limited variation in capacitance of varactors in silicon technologies restricts the phase shift variation achievable in an RTPS. In the present embodiments, the inductor sets the imaginary part of the reflective load impedance to a value where a change in capacitance yields a larger change in phase. This structure is suitable for mmWave as the capacitive parasitic of the inductor can be absorbed into the shunt inductor value.
Embodiments of the present invention can take the form of an entirely hardware embodiment or an embodiment including both hardware and software elements (which include but are not limited to firmware, resident software, microcode, etc.).
Embodiments as described herein may be a part of the design for an integrated circuit chip, an optical bench, a transmitter or receiver or any other apparatus or device that employs radio-transmissions or wireless communications. Chip designs may be created in a graphical computer programming language, and stored in a computer storage medium (such as a disk, tape, physical hard drive, or virtual hard drive such as in a storage access network). If the designer does not fabricate chips or the photolithographic masks used to fabricate chips, the designer transmits the resulting design by physical means (e.g., by providing a copy of the storage medium storing the design) or electronically (e.g., through the Internet) to such entities, directly or indirectly. The stored design is then converted into the appropriate format (e.g., Graphic Data System IT (GDSII)) for the fabrication of photolithographic masks, which typically include multiple copies of the chip design in question that are to be formed on a wafer. The photolithographic masks are utilized to define areas of the wafer (and/or the layers thereon) to be etched or otherwise processed.
The resulting integrated circuit chips can be distributed by the fabricator in raw wafer form (that is, as a single wafer that has multiple unpackaged chips), as a bare die, or in a packaged form. In the latter case the chip is mounted in a single chip package (such as a plastic carrier, with leads that are affixed to a motherboard or other higher level carrier) or in a multichip package (such as a ceramic carrier that has either or both surface interconnections or buried interconnections). In any case the chip is then integrated with other chips, discrete circuit elements, and/or other signal processing devices as part of either (a) an intermediate product, such as a motherboard, or (b) an end product. The end product can be any product that includes integrated circuit chips, ranging from toys and other low-end applications to advanced computer products having a display, a keyboard or other input device, and a central processor.
Referring now to the drawings in which like numerals represent the same or similar elements and initially to
The two main sources of loss in the RTPS are the losses in the transmission lines used to implement the coupler 22, and the losses in the reflective terminations 24. The finite quality factor of on-chip reactive components introduces a resistive component in the reflective termination. This causes the reflection to be imperfect, thus introducing loss. 3-dB 90° hybrid couplers can be implemented using coupled transmission lines.
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The reflective load terminations 104 and 106 for the hybrid coupler in both, the single-ended and the differential embodiments, are preferably implemented with a parallel resonant LC circuit. The limited variation in capacitance of varactors in silicon technologies restricts the phase shift variation achievable in an RTPS. The inductor sets the imaginary part of the reflective load impedance to a value where a change in capacitance yields a larger change in phase. This structure is suitable for mmWaves as the capacitive parasitic of the inductor can be absorbed into the shunt inductor value.
The coupler 102 performs 90 degree phase shifts between its ports in/out. To operate as a phase shifter (e.g. for an arbitrary phase), the coupler 102 is connected to reflective loads 104 and 106. The coupler 102 is designed to form part of a phase shifter and attain good performance, especially in integrated implementations.
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Shielding metal strips (e.g., strips 208) are implemented in a metal layer or multiple layers different from the two aforementioned metal layers 204 and 206 to isolate the lines 202 from the lossy silicon substrate 215. As a result of this shielding, in both even and odd mode, there is a higher capacitance seen on the signal layer closer to the shield layer. To balance this effect and maintain equal impedances in both even and odd modes, in accordance with one aspect of the present principles, the width of one of the signal metal level CPS (206) is reduced with respect to that of the other signal metal CPS (204).
It should be understood that particularly useful embodiments have the coupler 200 formed on substrate 215. The substrate 215 may include a silicon substrate, SiGe or any other suitable substrate material. The formation of the differential or single-ended embodiments is preferably contemplated for silicon integration using semiconductor processing operations. Metal layers may be deposited and etched using integrated circuit processing similar to CMOS type integrations. Formation of features can be performed with high accuracy. For example, the width and spacing of the coupled CPSes may be chosen to achieve the desired characteristic impedances. In addition, shielding strips are placed in a metal layer (e.g., M1) to reduce substrate loss and the size of the coupler.
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Based on the differential coupled-CPS coupler and shunt LC reflective terminations, a 60 GHz RTPS is designed. The results of an electromagnetic simulation of the RTPS are shown in
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The phased array factor is a function of the angle of incidence (θ) and the array's progressive delay difference expressed here in terms of phase shift, and hence reflects the spatial selectivity of the array. The beam-pointing direction θm is the incident angle corresponding to maximum power gain.
In addition, in the case of receivers, a phased array enhances the signal-to-noise ratio (SNR) by a factor of 10 log(N) assuming uncorrelated noise at each antenna, due to the coherent addition of received signals and the non-coherent addition of noise. In this case, N represents the SNR to be enhanced. In the context of transmitters, the phased array enhances the Effective Isotropic Radiated Power (EIRP) by a factor of 20 log(N) due to coherent addition of the signals transmitted by the antennas. In relatively narrowband phased arrays, a variable delay element that is required for each signal path is approximated with a variable phase shifter 608 in accordance with the present principles.
A key differentiator of millimeter wave (mmWave) technology is the ability of sensing or transmitting electromagnetic energy in a particular direction. This property (directivity) is essential for non-line-of-sight wireless communication systems and radars, which have started to be implemented on silicon in recent years. Directivity is the result of having multiple antennas and the ability to change the phase of the signal coming form or being sent to each antenna element. A phase shifter circuit with convenient properties for silicon integration for phased array integrated circuits is desired.
Having described preferred embodiments of an integrated millimeter wave phase shifter and method (which are intended to be illustrative and not limiting), it is noted that modifications and variations can be made by persons skilled in the art in light of the above teachings. It is therefore to be understood that changes may be made in the particular embodiments disclosed which are within the scope and spirit of the invention as outlined by the appended claims. Having thus described aspects of the invention, with the details and particularity required by the patent laws, what is claimed and desired protected by Letters Patent is set forth in the appended claims.
Number | Name | Date | Kind |
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5589845 | Yandrofski et al. | Dec 1996 | A |
6664869 | Hershtig | Dec 2003 | B2 |
20080197936 | Berg | Aug 2008 | A1 |
Number | Date | Country | |
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20100171567 A1 | Jul 2010 | US |