Patent Application
20080048543
CNTFEAs in both the cNT-on-Si post and the cNT-in-open aperture configurations were used in the present investigation. With the exception of some modifications to the former, the details of the fabrication were the same as those published in Hsu et al, Appl. Phys. Lett. 80, 188 (2002), J. Vac. Sci. Technol. B23, 694 (2005) and Hsu, Appl. Phys Lett 80,2988 (2002), all incorporated herein by reference. Integrally gated carbon nanotube field emitters fabricated by growing multi-walled carbon nanotubes inside pre-fabricated gate (aperature) structures were used. The height of the silicon post was reduced by isotropic etching to about 1 micron and the gate material was platinum instead of chromium. Additionally, open aperture arrays had a chromium gate. Those skilled in the art would understand that other materials could be used in the present invention.
Modified Fabrication of cNT-on-Si Post: The structure and fabrication of the gated device were slightly different from those described in Hsu et al, Appl. Phys. Lett. 80, 188 (2002). Isotropic etching reduced the height and the diameter of the silicon post to about 1 micron and 0.25 micron, respectively. The gate material was platinum instead of chromium. A thin layer of Ti was sputter deposited before sputter-deposition of the Ni catalyst (˜200 A). Instead of a HF dip to lift off catalyst from the oxide regions, glancing-angle sputtering at 15° from the substrate was used to remove the catalyst from the top surfaces of the substrate. All other growth parameters were the same, including the same hot-filament assisted cold wall CVD reactor and the same temperatures and gas (ethylene and ammonia) flow rates. The resulting cell structure consisted of multi-walled nanotubes protruding from the top of the Si post in a generally random direction and is shown in
Fabrication of cNT-in-Open Aperture: A cNTFEA with the open aperture design was fabricated. Open apertures were first reactive-ion-etched through chrome/silicon gates and silicon dioxide insulator on a silicon substrate. A sidewall silicon dioxide spacer was formed by conformal silicon dioxide layer deposition by CVD, followed by etch back. Fe catalyst was sputter-deposited onto the sample consisting a small array of 10 to 40 cells, followed by 15° glancing angle sputter-removal of the Fe from the top surface. Hot-filament assisted CVD was used to grow the nanotubes inside the apertures, including on the vertical sidewall spacer.
Current-voltage emission characterization for both configurations of emitters was carried out in an UHV chamber (base pressure 10−10 Torr) equipped with a load lock, sample stage heater, and computerized data collection. Tungsten probes contacted the cathode (substrate) and the gate and the emission was collected on an anode probe biased at 200 V and placed about 1 mm from the sample. Hydrogen was admitted through a leak valve and dynamically pumped using an oil-free turbo-molecular pump. The gate pads of arrays of the cNT-on-Si post configuration were contacted with gold wire bonding and an anode made of a Pt mesh at 200 V bias was placed at about 2 mm from the sample. Purified hydrogen from a Pd diffusion cell was used in all the experiments.
CNT-on-Si Post Emitters:
A separate array with the same number of cells was run overnight in a turbo-pumped chamber under a continuous flow of 1×10−7 Torr oxygen at a constant gate voltage of 50 V until the emission degraded to about 44 nA. The effect of the addition of a continuous flow of hydrogen at 9×10−5 Torr is shown in the anode current-time plot in
These results suggest that operation in oxygen did not significantly consume the nanotubes through reaction with oxygen to form CO or CO2 gas. Instead, the emission degradation was likely due to surface contamination with oxygen, which was removed by reaction with hydrogen atoms. Exposure of the emitters to molecular hydrogen or oxygen when the arrays were not emitting had no effect on the emission produced once the gases are removed. The fact that the emission characteristics do not change when exposed to gases unless field emission is taking place suggests that the nanotubes are inert to the molecular forms of hydrogen and oxygen and that the atomic forms, which are created by electron dissociation, react with surface groups either in removal or attachment processes.
CNT-in-Open Aperture Emitters: CNT-in-Open aperture emitters have achieved the lowest gate current to anode current ratio (2.5%) of any nanotube emitters to date. The results from a 40-cell array taken under UHV conditions are reproduced in FIG. 5. The
Significant changes in the emission current for hydrogen pressures below 1×10−5 torr were not observed. The effect increased with pressure up to about 10−4 torr, and stayed the same at higher pressures. The emission began to decrease as soon as the hydrogen was removed but some effect remained for several hours after the hydrogen was removed.
The requirement for relatively high pressures (>10−6 Torr) of hydrogen again suggests that atomic hydrogen is responsible for the large enhancement and regeneration effects and that atomic hydrogen is created by electron impact from the operating emitters. The production rate of atomic hydrogen is apparently too low at lower pressures.
The effect of the atomic hydrogen may be any or all of the following mechanisms a) chemical removal of oxygen-containing surface species (which may act as p-type dopants and/or increase the work function), b) formation of a surface dipole (reducing the work function), and c) n-type doping by atomic hydrogen.
The results suggest that these beneficial hydrogen-nanotube interaction processes could also be accomplished and speeded up by exposing the emitters to an external source of hydrogen atoms. The inclusion of hydrogen at appropriate pressures (so not to affect electron mean free-path) in devices that use cNT emitters can enhance emitter lifetime and result in large cost-savings.
The hydrogen can be provided by an any source known in the art. Some examples include, but are not limited to using a hot filament operating in the presence of hydrogen or using hydrogen plasma. Another source could be a positively-biased structures, such as gate and anode, that have a large capacity for adsorbing hydrogen. Reactive forms of hydrogen, such as atoms and ions, can be produced by electron impact on the adsorbed hydrogen on the positively-biased structures. Further, positively-biased structures that can catalytically dissociate hydrogen can likewise produce reactive forms of hydrogen by electron impact on the hydrogen dissociated on the structures. Additionally, hydrogen can be released when needed where hydrogen is pre-adsorbed on a getter material and the getter material is activated when the hydrogen is needed. Another potential source of hydrogen is a positively-biased structure containing chemically-bonded hydrogen or dissolved hydrogen, which produces hydrogen by electron impact on said structure. The chemically-bonded hydrogen could be, for example, a metal hydride.
The above description is that of a preferred embodiment of the invention. Various modifications and variations are possible in light of the above teachings. It is therefore to be understood that, within the scope of the appended claims, the invention may be practiced otherwise than as specifically described. Any reference to claim elements in the singular, e.g. using the articles “a,” “an,” “the,” or “said” is not construed as limiting the element to the singular.
This application claims the benefit of U.S. Provisional Application No. 60/612393, filed Sep. 15, 2004.
| Number | Date | Country | |
|---|---|---|---|
| Parent | 60612393 | Sep 2004 | US |
| Child | 11229437 | US |
