The present invention relates generally to plasma processing. In particular, but not by way of limitation, the present invention relates to systems, methods and apparatuses for dissociating a reactive gas into radicals.
Passing a gas through a plasma can excite the gas and produce activated gases containing ions, free radicals, atoms and molecules. Activated gases and free radicals are used for numerous industrial and scientific applications including processing solid materials such as semiconductor wafers, powders, and other gases. Free radicals are also used to remove deposited thin films from semiconductor processing chamber walls.
Where activated gases or free radicals are used in processing, it may be desirable to preclude the plasma from interacting with the processing chamber or semiconductors being processed. Remote plasma sources can fill this need by generating the plasma, activated gases, and/or free radicals in a chamber that is isolated from the processing chamber, and then passing only the activated gases and/or free radicals to the processing chamber.
Plasmas can be generated in various ways, including DC discharge, radio frequency (RF) discharge, and microwave discharge. DC discharges are achieved by applying a potential between two electrodes in a gas. Plasmas generated via RF and DC currents can produce high-energy ions able to etch or remove polymers, semiconductors, oxides, and even metals. Therefore, RF or DC-generated plasmas are often in direct contact with the material being processed. Microwave discharges produce dense, low ion energy plasmas and, therefore, are often used to produce streams of activated gas for “downstream” processing. Microwave discharges are also useful for applications where it is desirable to generate ions at low energy and then accelerate the ions to the process surface with an applied potential.
Existing remote sources (e.g., toroidal and linear remote sources) have four main drawbacks. First, they fail to pull the plasma away from the remote source chamber walls thus allowing the plasma to etch the chamber walls. This will be referred to as poor plasma confinement. Second, they use a high power density to sustain the plasma, which generates high energy ions that bombard the remote source chamber walls and the processing chamber walls. Ion bombardment can also damage the wafers or other semiconductors being processed in the process chamber (e.g., etching low-k dielectrics). Third, toroidal and linear remote sources have significant electrostatic coupling to the plasma, which leads to further ion bombardment. Finally, these sources provide a narrow plasma cross-section through which non-activated or non-ionized gas can pass through. Thus, they may be limited in their effectiveness at dissociating non-activated gas.
Illustrative embodiments of the present disclosure are shown in the drawings and summarized below. These and other embodiments are more fully described in the Detailed Description section. It is to be understood, however, that there is no intention to limit the claims herein to the forms described in this Summary or in the Detailed Description. One skilled in the art can recognize that there are numerous modifications, equivalents, and alternative constructions that fall within the spirit and scope of the present disclosure as expressed in the claims.
In one embodiment, the invention may be characterized as a remote plasma source. In this embodiment, the remote plasma source includes a first inductive coil having a first plurality of loops and a second inductive coil having a second plurality of loops, wherein the first and second inductive coils are parallel to each other. The first and second inductive coils are configured to conduct an alternating current to generate magnetic fields that sustain a disc-shaped plasma between the first and second inductive coils, wherein the alternating current sustains the disc-shaped plasma primarily through inductive coupling. And a chamber disposed between the first and second inductive coils, and configured to enclose the disc-shaped plasma.
Another aspect of the invention may be characterized as a method for providing a reactive gas to a remote plasma source chamber. The method includes passing a high voltage current through a first inductor and a second inductor to generate an electric field passing from the first inductor through the remote plasma source chamber and to the second inductor wherein the electric field is strong enough to ignite a plasma in the reactive gas in the remote plasma source chamber. In addition, an alternating current is passed through the first inductor and the second inductor to inductively induce minor electric fields in the plasma. The reactive gas is dissociated by passing it through the plasma to form activated gas and free radicals, and the activated gas and free radicals are removed from the remote plasma source chamber.
Another aspect of the invention may be characterized as a system that includes a remote plasma source chamber having parallel first and second surfaces, a first coiled conductor arranged outside the remote plasma source chamber and adjacent to the first surface of the remote plasma source chamber, a first dielectric arranged between the first surface and the first coiled conductor, a second coiled conductor arranged outside the remote plasma source chamber and adjacent to the second surface of the remote plasma source chamber, and a second dielectric arranged between the second surface and the second coiled conductor. In addition, a reactive gas entry directs a reactive gas into the remote plasma source chamber and a radicals exit port removes radicals formed when the reactive gas is passed through the plasma disc formed in the remote plasma source chamber.
Various objects and advantages and a more complete understanding of the present invention are apparent and more readily appreciated by reference to the following Detailed Description and to the appended claims when taken in conjunction with the accompanying Drawings where like or similar elements are designated with identical reference numerals throughout the several views and wherein:
Applicants have found that the deficiencies of existing remote sources (e.g., toroidal and linear remote sources) can be solved via a remote plasma source having two circular or coiled conductors. The use of two conductors with mirrored AC passing through them achieves far greater plasma confinement and lower plasma densities than the prior art. This is in part due to the creation of a disc-shaped plasma rather than a toroidal or tubular plasma as seen in the prior art. Additionally, the disc-shaped plasma presents a greater cross section through which non-activated gas can be passed. The two circular or coiled conductors can be spaced from each other and have a radius per winding that falls within a range of values that allow the plasma to be sustained with low power density, low electrostatic coupling, and that will confine the plasma to a much greater extent than the prior art.
Although a single inductive element, 304 or 306 could be used to sustain the plasma 342, vertical containment would be poor because a single inductive element would cause the plasma 342 to have a high density near the first or second inner surface 316, 318, depending on whether the first inductive element 304 or the second inductive element 306 is used. This high plasma density near either surface 316, 318 would cause undesired etching of the inside of the remote plasma source chamber 302; thus to pull the plasma 342 off of one of the walls, two inductive elements 304, 306 in the exemplary embodiment are used. In this way, the plasma 342 is vertically contained away from both of the inner surfaces 316, 318 to an extent previously unseen.
In addition, vertical confinement may be further enhanced by selecting certain ratios of the radii of the inductive elements 304, 306 versus a distance between the inductive elements 304, 306. For particular ratios, a potential energy of the plasma 342 is such that the plasma 342 is further confined to a center of the volume 320. For instance, a nitrogen plasma density in the 1011 to 1012 cm−3 range can be pulled off the walls for the dual coils configured to produce ˜7 Gauss rms at the center of the plasma.
The remote plasma source chamber 402 can be made of a ceramic or any other material that allows passage of a magnetic field generated by the conductors 404, 406. The remote plasma source chamber 402 can be shaped like a cylinder (viewed here in profile). And from above, the remote plasma source chamber 402 appears as a circle. And the first and second inner surfaces 416, 418 can be parallel to each other and perpendicular to an axis 470. The third inner surface 424 can be perpendicular to the first and second inner surfaces 416, 418, and parallel to and radially disposed around the axis 470. In this embodiment, the axis 470 passes through a middle or center of the remote plasma source chamber 402 such that the third inner surface 424 is always equidistant from the axis 470.
As depicted, the dielectrics 412, 414 can touch an outer surface of the remote plasma source chamber 402 and can be separated by corresponding air gaps from the conductors 404, 406. The air gaps along with the dielectrics 412, 414 impede electric fields generated by the conductors 404, 406 directed towards the plasma 442. As such, the dielectrics 412, 414 and the air gap decrease electrostatic coupling between the conductors 404, 406 and the plasma 442. In one variation of the present embodiment, a faraday shield can be arranged between the dielectrics 412, 414 and the conductors 404, 406 to further reduce electrostatic coupling to the plasma 442. In another variation of the present embodiment, the dielectrics 412, 414 can touch the conductors 404, 406.
The gas entry 408 can be configured to provide non-activated gas to the volume 420. The gas entry 408 can be arranged to be flush with the third inner surface 424 such that the gas entry 408 does not protrude into the volume 420. In such an embodiment, the non-activated gas enters the volume 420 at a radius from the axis 470 equal to the radius of the third inner surface 424. In an alternative embodiment, the gas entry 408 can be arranged within the volume 420 such that the non-activated gas enters the volume 420 at a radius less than the radius of the third inner surface 424. For instance, the gas entry 408 can be arranged to release non-activated gas into the volume 420 at a radius equal to the radius from the axis 470 of the conductors 404, 406. The gas entry 408 can be arranged at an angle and radius from the axis 470 that enables the non-activated gas to be released into the volume 420 at a point and direction tangential to, or near tangential to the plasma 442.
The gas entry 408 can also be positioned and directed to release gas tangential to the electric fields. For example, the gas entry 408 can be arranged at a position and angle tangential to the conductors 404, 406. In other words, assuming an imaginary cylinder is formed that passes through both conductors 404, 406, the gas entry 408 can be aligned tangential to the imaginary cylinder. In terms of vertical orientation, the gas entry 408 can be arranged midway between the first and second conductors 404, 406. The gas entry 408 can release non-activated gas in a direction parallel to the conductors 404, 406.
In contrast to typical linear remote plasma sources, which release and flow non-activated gas in a direction parallel with the respective magnetic fields, the non-activated gas in the present embodiment can be released into the volume 420 in a direction perpendicular to the vertical magnetic fields generated by the conductors 404, 406.
The gas exit 410 can be configured to remove or allow the release of activated gas and free radicals from the volume 420. A lifetime of the plasma's 442 prevents it from diffusing through or being pulled through the gas exit 410 before the plasma is extinguished. The gas exit 410 can be arranged flush with the third inner surface 424 and can provide a path for activated gas and free radicals to be transported to a processing chamber (not illustrated).
The first and second conductors 404, 406 can be parallel to each other, and they can have a circular or coiled shape. In the illustrated embodiment, the conductors 404, 406 have a circular shape with a constant radius. This can be referred to as a single-loop or single-winding embodiment. However, it is to be understood that the conductors 404, 406 can also be coiled in a spiral formation, and thus have a varying radius. In the illustrated embodiment, the radius of the outermost portion of the conductors 404, 406 is less than the radius of the third inner surface 424. This prevents plasma from being sustained too close to the third inner surface 424 and thus helps ensure radial plasma confinement.
How far, in terms of the radial distance from the axis 470, the third inner surface 424 is located from the conductors 404, 406 accounts for inherent plasma expansion. More specifically, the magnetic field causes the plasma to have a radial force pushing it outwards towards the third inner surface 424, but the plasma does not reach the third inner surface 424 because it is extinguished as it moves away from the induced electric fields 430. As such, when the conductors 404, 406 are arranged at least a minimum distance inside the radius of the third inner surface 424, the plasma is self-containing in the radial directions. Thus, etching of the third inner surface 424 can be avoided.
Each conductor 404, 406 can be connected to an alternating current source such that the polarity, amplitude, and phase in each conductor 404, 406 are equal. Multiple current sources can also be used. The voltage from one end of each conductor 404, 406 to another end of each conductor 404, 406 is highly flexible. For instance, the conductors 404, 406 can each have a potential difference of 1 V, but the high and low potential can be +0.25 V and −0.75 V. As another example, the potential difference could be 1 V, but the high and low potential can be 0 V and 1.0V. Numerous other combinations are also possible.
In other embodiments, the conductors 404, 406 can be arranged radially (see for example,
The induced electric fields 530 in this embodiment ionize non-activated gas that is introduced into the volume 520 and sustain the plasma 542. The plasma 542 tends to have a profile that matches that of the induced electric fields 530. However, the plasma profile can be larger than the induced electric fields 530 profile due to plasma diffusion. In other words, while the induced electric fields 530 ionize the non-activated gas and generate the plasma 542, some of the plasma 542 spreads out or diffuses from ionization locals.
This diffusion is responsible for one of two types of plasma confinement that embodiments described herein enable. The first type of plasma confinement is radial—the forces and circumstances that minimize the amount of plasma 542 that contacts the third inner surface 524. The second type of plasma confinement is vertical—the forces and circumstances that minimize the amount of plasma 542 that contacts the first and second inner surfaces 516, 518.
Radial confinement is an issue since magnetic fields in the plasma 542 create radially-expansive forces on the plasma 542. Without a countervailing force, the plasma 542 would substantially contact the third inner surface 524 and etch it. But because plasma cannot exist long without being sustained by the induced electric fields 530, the plasma 542 is extinguished as it diffuses and expands radially away from the induced electric fields 530. As a consequence, although there is a force pushing the plasma 542 to expand radially towards the third inner surface 524, the plasma 542 is extinguished before it reaches the third inner surface 524. Thus, as long as the conductors 504, 506 are located at a radius that is not too close to the radius of the third inner surface 524, the plasma can be considered radially confined and will not substantially etch the third inner surface 524.
Vertical confinement prevents the plasma 542 from substantially contacting the first and second inner surfaces 516, 518. This confinement is due to two effects: (1) vertical smearing of the plasma and thus decreased plasma density due to the use of two conductors 504, 506 rather than just one conductor; and (2) an optimized conductor 504, 506 loop radius R versus a conductor-gap distance D that creates a situation where plasma potential energy is minimized midway between the conductors 504, 506.
Vertical smearing of the plasma results from the use of the two conductors 504, 506 arranged on opposite sides of the plasma 542. Recall from
In order to better confine the plasma 542 and pull it off the first inner surface 516, the second conductor 506 is added. Now, the magnetic field 550 strength is strongest near the first and second inner surfaces 516, 518. Instead of the bulk of the magnetic field 550 strength existing near the first inner surface 516, the magnetic field 550 is smeared in the vertical dimension such that it bunches up against both the first and second inner surfaces 516, 518. The effect of using two conductors 504, 506 is thus to lower the magnetic field 550 strength near both of the inner surfaces 516, 518 as compared to the situation where either conductor 504, 506 was used by itself. Since the magnetic field 550 strength is reduced, the induced currents at the induced electric fields 530, and thus plasma 542 density, are also reduced. So, although the plasma 542 is still expected to contact the first and second inner surfaces 516, 518, the plasma 542 density making contact is expected to be much less than if only a single conductor 504, 506 is used. In other words, the plasma 542 is smeared in the vertical direction (e.g., it has a smaller density gradient) when two conductors 504, 506 are used instead of just one. Thus, the use of the two conductors 504, 506 advantageously decreases the plasma 542 density near the first and second inner surfaces 516, 518 to assist in vertical confinement.
But Applicants discovered that vertical confinement is even better than predicted. The added confinement is unexpectedly due to minimized plasma 542 potential in the middle of the volume 520 halfway between the first and second inner surfaces 516, 518. As noted above, one would expect the plasma 542 to have the greatest density near the first and second inner surfaces 516, 518. Yet, as seen in
Vertical confinement can be optimized via a unique frequency-dependent relationship between a radius R of the conductors 504, 506 and a distance D between the conductors. The radius R is measured from the axis 570 to an inside edge of the conductors 504, 506. Frequency-dependent means that the optimum relation between R and D depends on the AC frequency in the conductors 504, 506.
The currents induced by the induced electric fields 530 also induce magnetic fields (not illustrated) that circle the induced electric fields 530. As the distance D gets smaller (i.e., the first and second conductors 504, 506 are moved closer to each other), these induced magnetic fields can gradually start to cancel the magnetic field 550. At a certain distance D, the induced magnetic fields cancel the magnetic field 550.
In other embodiments, the conductors 504, 506 can be arranged radially (see
As compared to the single-loop embodiment described with reference to
The gas entry 608 can be arranged at a position and angle tangential to the outermost conductors. In other words, assuming an imaginary cylinder passing through both outermost conductors, the gas entry 608 can be aligned tangential to the imaginary cylinder. Gas entry 608 can release non-activated gas into the volume 620 parallel to the conductors 604, 606 and at any angle between tangential to the plasma 642 and directed at the axis 670. In other words, the non-activated gas can be directed at any point on the plasma 642 disc, but preferably not directed at the axis 670. This helps to establish a circulating gas and plasma 642 flow.
In the depicted embodiment, the plasma can be electrostatically ignited. For example, before any plasma exists in the volume 620, an electric potential can be formed between the first and second conductors 604, 606. This potential creates an electric field through the volume 620. When the field is strong enough it begins to ionize atoms and break apart molecules. Each ionized atom and ripped-apart molecule shoots off electrons and other particles that further ionize surrounding atoms and split surrounding molecules. Ignition is thus a run-away process that feeds off itself until the non-activated gas in the volume 620 is largely converted to the plasma 642.
The AC source 770 can pass AC current through any portion of the first conductor 704. For instance, in the illustrated embodiment, AC current passes through the entire first conductor 704. In another embodiment, the AC source 770 can be connected to the first conductor 704 such that AC current only passes through 90% of the first conductor 704, for example. That portion of the first conductor 704 that current does not pass through can be at the same potential as a closest point on the first conductor 704 through which AC current passes. This portion or length of the first conductor 704 in which current does not pass, and where the potential is constant, can be referred to as a pigtail. The pigtail can comprise any length or portion of the first conductor 704.
If the first conductor 704 is coiled, the pigtail can either comprise an inner portion of the coil towards the center or another portion of the coil towards the outer radius of the first conductor 704. In an embodiment, the pigtail is used to electrostatically ignite the plasma, and more than one pigtail can be made from the first conductor 704.
But an advantage of the remote plasma source 800 is that electrostatic coupling drops off faster as a function of distance from the plasma 842 than inductive coupling. Hence, as each loop of the first and second conductors 804, 806 are arranged further and further from the plasma 842, the electrostatic coupling component is less than the inductive coupling component for each loop. Thus, the remote plasma source 800 allows a greater percentage of the power coupled into the plasma 842 to be inductively rather than electrostatically coupled.
Those skilled in the art can readily recognize that numerous variations and substitutions may be made in the invention, its use, and its configuration to achieve substantially the same results as achieved by the embodiments described herein. Accordingly, there is no intention to limit the invention to the disclosed exemplary forms. Many variations, modifications, and alternative constructions fall within the scope and spirit of the disclosed invention.
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