RESIN COMPOSITION FOR ORGANIC INSULATING LAYER, METHOD OF MANUFACTURING RESIN COMPOSITION, AND DISPLAY PANEL INCLUDING RESIN COMPOSITION

Abstract
Disclosed herein is a resin composition for an organic insulating layer, a method of manufacturing the same, and a display panel including an insulating layer formed using the resin composition. The resin composition for an organic insulating layer is produced by polymerizing about 5 to about 35 wt % of an unsaturated carboxylic acid, an unsaturated carboxylic acid anhydride, or a mixture of the unsaturated carboxylic acid and the unsaturated carboxylic acid anhydride, about 5 to about 40 wt % of a styrene compound, about 5 to about 40 wt % of an epoxy compound, about 0.1 to about 10 wt % of an isobornyl compound, and about 20 to about 40 wt % of a dicyclopentadiene compound, based on the total weight of unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, styrene compound, isobornyl compound, and dicyclopentadiene compound.
Description

BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1 is a layout view illustrating a structure of an exemplary thin film transistor array panel according to an exemplary embodiment,



FIGS. 2 and 3 are sectional views of the exemplary thin film transistor array panel of FIG. 1 taken along the lines II-II and II-II,



FIGS. 4, 7, 10, and 13 are layout views sequentially illustrating the manufacturing process of the exemplary thin film transistor array panel according to the exemplary embodiment of the present invention,



FIGS. 5 and 6 are sectional views of the exemplary thin film transistor array panel of FIG. 4 taken along the lines V-V and VI-VI,



FIGS. 8 and 9 are sectional views of the exemplary thin film transistor array panel of FIG. 7 taken along the lines VIII-VIII and IX-IX,



FIGS. 11 and 12 are sectional views of the exemplary thin film transistor array panel of FIG. 10 taken along the lines XI-XI and XII-XII, and



FIGS. 14 and 15 are sectional views of the exemplary thin film transistor array panel of FIG. 13 taken along the lines XIV-XIV and XV-XV.


Claims
  • 1. A resin composition for an organic insulating layer produced by polymerizing about 5 to about 35 wt % of an unsaturated carboxylic acid, an unsaturated carboxylic acid anhydride, or a mixture thereof, about 5 to about 40 wt % of a styrene compound, about 5 to about 40 wt % of an epoxy compound, about 0.1 to about 10 wt % of an isobornyl compound, and about 20 to about 40 wt % of a dicyclopentadiene compound based on the total weight of unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, styrene compound, epoxy compound, isobornyl compound, and dicyclopentadiene compound.
  • 2. The resin composition of claim 1, wherein the unsaturated carboxylic acid comprises at least one of an acrylic acid, a methacrylic acid, a crotonic acid, an itaconic acid, a maleic acid, a fumaric acid, a citraconic acid, a mesaconic acid, or a cinnamic acid.
  • 3. The resin composition of claim 1, wherein the styrene compound comprises at least one of styrene, a-methyl styrene, m-methyl styrene, p-methyl styrene, or vinyl toluene.
  • 4. The resin composition of claim 1, wherein the epoxy compound comprises at least one of glycidyl(meth)acrylate, α-n-propyl glycidyl (meth)acrylate, α-n-butyl glycidyl(meth)acrylate, β-ethyl glycidyl(meth)acrylate, 3,4-epoxy butyl(meth)acrylate, 6,7-epoxy heptyl(meth)acrylate, o-vinyl benzyl glycidyl ether, m-vinyl benzyl glycidyl ether, or p-vinyl benzyl glycidyl ether.
  • 5. The resin composition of claim 1, wherein the isobornyl compound comprises at least one of isobornyl(meth)acrylate, cyclohexyl (meth)acrylate, 2-methylcyclohexyl(meth)acrylate, dicyclopentanyloxyethyl (meth)acrylate, phenyl(meth)acrylate, benzyl(meth)acrylate, or 2-hydroxyethyl (meth)acrylate.
  • 6. The resin composition of claim 1, wherein the dicyclopentadiene compound comprises at least one of dicyclopentenyloxyethyl acrylate, dicyclopentenyl(meth)acrylate, tris-2-acryloxyethyl isocyanurate, pentamethylpiperidyl(meth)acrylate, or ethylene oxide bisphenol A (meth)acrylate.
  • 7. The resin composition of claim 1, further comprising: about 0.01 to about 15 wt % of a polymerization initiator, based on the total weight of unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, styrene compound, isobornyl compound, and dicyclopentadiene compound.
  • 8. The resin composition of claim 7, wherein the polymerization initiator comprises at least one of 2,2′-azobis(2-amidinopropane)dihydrochloride, 2,2′-azobis(2-methylbutyronitrile), 2,2′-azobis(isobutyronitrile), 2,2′-azobis(2,4-dimethylvaleronitrile), 2,2′-azobis(4-methoxy-2,4-dimethylvaleronitrile), 2,2′-azobis(4-cyanovaleric acid), or dimethyl 2,2′-azobisisobutyrate.
  • 9. A method of manufacturing a resin composition for an organic insulating layer, the method comprising: preparing a copolymer solution by polymerizing about 5 to about 40 wt % of an unsaturated carboxylic acid, an unsaturated carboxylic acid anhydride, or a mixture thereof, about 5 to about 40 wt % of a styrene compound, about 5 to about 40 wt % of an epoxy compound, about 0.1 to about 10 wt % of an isobornyl compound, about 20 to about 40 wt % of a dicyclopentadiene compound, and about 0.01 to about 15 wt % of a polymerization initiator, wherein the amount of each of the foregoing is based on the total weight of unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, styrene compound, epoxy compound, isobornyl compound, and dicyclopentadiene compound; andpurifying the copolymer solution.
  • 10. The method of claim 9, wherein the preparing of the copolymer solution comprises: preparing a solution comprising the unsaturated carboxylic acid, the unsaturated carboxylic acid anhydride, or mixture thereof; the styrene compound; the epoxy compound; the isobornyl compound; the dicyclopentadiene compound; and the polymerization initiator, and heating the solution.
  • 11. The method of claim 10, wherein the heating of the solution is performed at a temperature of about 40 to about 80° C.
  • 12. The method of claim 11, wherein the heating of the solution is performed at a rate of about 100 to about 500 rpm for about 4 to about 48 hours.
  • 13. The method of claim 10, further comprising adding about 0.001 to about 1 wt % of a polymerization inhibitor based on the total weight of unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, styrene compound, epoxy compound, isobornyl compound, and dicyclopentadiene compound after the heating of the solution to finish polymerization.
  • 14. The method of claim 13, wherein the polymerization inhibitor comprises at least one of lactone, phosphite, or phosphonite, each of which does not contain a phenol group.
  • 15. The method of claim 9, further comprising dissolving the copolymer resin in a solvent after the purifying of the copolymer resin.
  • 16. The method of claim 15, wherein the solvent comprises at least one of ethoxyethyl propionate, methanol, propylene glycol monoethyl acetate, propylene glycol monoethyl propionate, butyl acetate, ethyl lactate, butyl carbitol, or propylene glycol methylethyl ether.
  • 17. A display panel comprising: a substrate;a plurality of thin film patterns that are formed on the substrate; andan insulating layer that is formed on the thin film patterns, wherein the insulating layer comprises a copolymer resin formed by polymerizing about 5 to 35 about wt % of an unsaturated carboxylic acid, an unsaturated carboxylic acid anhydride, or a mixture thereof, about 5 to about 40 wt % of a styrene compound, about 5 to about 40 wt % of an epoxy compound, about 1 to about 10 wt % of an isobornyl compound, and about 20 to about 40 wt % of a dicyclopentadiene compound based on the total weight of unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, styrene compound, epoxy compound, isobornyl compound, and dicyclopentadiene compound.
  • 18. The display panel of claim 17, wherein the thin film patterns comprise gate lines having gate electrodes, a gate insulating layer formed on the gate lines, a semiconductor layer formed on a predetermined region of the gate insulating layer, data lines that are formed on the gate insulating layer and the semiconductor layer and having source electrodes, and drain electrodes that are spaced apart from the source electrodes so as to face the source electrodes.
  • 19. The display panel of claim 18, further comprising pixel electrodes that are connected to the drain electrodes on the insulating layer.
Priority Claims (1)
Number Date Country Kind
10-2006-0010503 Feb 2006 KR national