The present invention relates to gain circuits and in particular to gain circuits fabricated using deep sub-micron processes.
Resistors with high resistance values are often used in the implementation of analog circuitry. Providing resistors with high resistance values was not a problem in earlier technologies as high sheet resistance resistors were available from the standard process flow. However, with the scaling down of critical dimensions in state of the art CMOS technologies high sheet resistance resistors are typically not available. For example, in a typical 0.18 micron technology, the poly resistors generated from a conventional process flow have a low sheet resistance ranging from 200 to 400 ohms per square. In order to obtain high sheet resistance resistors, additional process steps and mask levels are required. This is undesirable as it adds to the complexity and cost of fabricating the ICs.
As a result, in current advanced deep sub-micron (DSM) processes, analog designers either use low sheet resistance resistors to implement high value resistances or make do with smaller resistance values. The former approach, however, is not efficient for the miniaturisation as large resistors which consume more silicon space are required in order to implement high value resistances.
Since the gain of the circuit is dependent on the ratio of the feedback resistors (R2202 and R3203) over input resistor R1201, a large feedback resistor value is needed in order to obtain a high gain. For example, assuming that the values of the resistors in
Another prior-art solution is to use the popular R-2R network 300 shown in
As evidenced from the above discussion, it would be desirable to have a resistor efficient gain circuit which reduces resistor area without adversely effecting the functionality of the circuit. Additionally, for some applications it is also important to have the gain circuit input impedance remaining constant so as not to change the external ac coupling network frequency response of the circuit and also avoid external input source loading effects.
The present invention relates generally to gain circuits. In particular, the present invention relates to the use of relatively low resistance resistors to implement high-gain circuits. Conventionally, a high-gain circuit is obtained by using a high resistance resistor in the negative feedback loop of a differential amplifier. In general terms, the present invention proposes replacing the high resistance feedback resistor with a T resistor network. The T resistor network comprising low resistance poly resistors and switches configured in a T-structure minimises the feedback resistance required.
The gain circuit of the present invention has a variable gain. It includes a differential amplifier, a negative feedback loop and a first T resistor network comprised of first, second and third resistor branches joined at a junction point. The first and second resistor branches are connected in series with the negative feedback loop. Additionally, the third resistor branch includes a switch that connects the junction point through the third resistor branch to ground when in a closed state and that turns the third resistor branch into an open circuit when in an open state. The switch of the third resistor branch, when in the closed state, produces a gain at the output of the variable analog gain circuit.
The benefit of resistor miniaturization by using relatively low value resistors is especially useful in technologies where resistors having high values are not easily implemented. For example, in DSM processes, high sheet resistance resistors are very costly. Additionally, the present invention also improves gain accuracy, scales parasitic switch impedance contributions, and provides a more constant gain circuit input impedance.
The present invention will now be described, by way of example, with reference to the accompanying drawings, in which:
Generally, the present invention minimises the resistance of the resistors used by replacing the large resistors in a conventional gain circuit with a T resistor network. For example, the inventive gain circuit in
In the step gain circuit shown in
On the other hand, closing switches S1121a and 121b while keeping switch 122 open provides a gain of 24 dB. Assuming that the voltage at the T junction is V2, and after algebraic deduction, the output voltage Vo can be expressed in terms of the input voltage Vi as (sign inversion is omitted):
Realisation of the 24 dB gain can be achieved by selecting R1111=2 unit resistance, R2103=2 unit resistance, R3105=4 unit resistance, R4107=½ unit resistance, R5115=2 unit resistance as shown in
In one embodiment, the switches required in the gain circuit of the present invention are implemented using transistors. Preferably, they are implemented using MOS transistors because of their low current consumption when not switching. As the transistors are not ideal, there is a small turn-on resistance for each switch that is closed. Referring to
In one embodiment, a switch may be physically made up of several switches connected in series or parallel in order to obtain the turn-on resistance required. For example, a MOS switch may be formed by connecting in series or parallel several MOS transistors having the same turn-on resistance. If the turn-on resistance of each unit MOS transistor is 2r (unit turn-on resistance), then switch S1121b which has a turn-on resistance of 8r may be implemented by connecting 4 unit turn-on resistance transistors in series. Also, in a preferred embodiment, the switches are located near virtual ground to minimize voltage coefficient effects on switch matching. Virtual ground refers to, for example, the negative input port of an operational amplifier which for the circuit in
Assuming that the switches are implemented by connecting a number of unit switches each having a turn-on resistance of 2r, the gain circuit in
The R-2R circuit of
The circuit 500 can be analysed as follows:
Thus, the parasitic effects of the switches are compensated by selecting the turn-on resistance of the switch S1513 to have a value equal to the gain multiplied by the turn-on resistance of the switch S0509. Also, the switch 607 is selected to have a turn-on resistance value equal to the turn-on resistance of the switch S1513 scaled by the constant “k”. In this way the parasitic switch impedance contributions are scaled so that they do not effect the values of the resistances that need to be selected to obtain a desired gain. Based on the above analysis of the circuit 500, table 1 shows that many different gain values can be obtained from the T resistor network 501 by varying the parameters.
The circuit 800 can be analysed as follows:
Thus, the parasitic effects of the switches are compensated by selecting the turn-on resistance of the switch S1821 to have a value equal to the gain multiplied by the turn-on resistance of the switch S0817. Also, the switch 607 is selected to have a turn-on resistance value equal to the turn-on resistance of the switch S1821 scaled by the constant “k”. In this way the parasitic switch impedance contributions are scaled so that they do not effect the values of the resistances that need to be selected to obtain a desired gain Based on the above analysis of the circuit 800, table 3 shows that many different gain values can be obtained from the 2-T gain circuit 800 by varying the parameters.
The T-structure 901 includes a resistor 937 having a resistance of R, a resistor 935 also having a resistance of R, and the distributed branches 905, 907 The distributed branch 905 includes a resistor 915 having a resistance of R and a switch S3a 917 having a turn-on resistance of 16r. The distributed branch 907 includes a resistor 919 having a resistance of R and a switch S3b 921 having a turn-on resistance of 16r.
The T-structure 903 includes a resistor 939 having a resistance of R, the resistor 935 which is also shared with the T-structure 901, and the distributed branches 909, 911, 913. The distributed branch 909 includes a resistor 923 having a resistance of 4R and a switch S6a 925 having a turn-on resistance of 16r. The distributed branch 911 includes a resistor 927 having a resistance of 4R and a switch S6b 929 having a turn-on resistance of 16r. The distributed branch 913 includes a resistor 931 having a resistance of 4R and a switch S6c 933 having a turn-on resistance of 16r.
As in the circuit of
Table 4 provides examples of various gains that can be obtained from the combination 2-T/distributed-T gain circuit 900 by opening and closing the different switches. Note that other resistor and switch values can be used as well as structures having more T-structures. Additionally, each of the T-structures can have a single branch or can be distributed -T structures having two or more distributed branches.
The general embodiment for reusing switches is explained with reference to
Number | Name | Date | Kind |
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4354159 | Schorr et al. | Oct 1982 | A |
5973566 | Leiby | Oct 1999 | A |
6703682 | Aswell | Mar 2004 | B1 |
Number | Date | Country | |
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20050264360 A1 | Dec 2005 | US |