Claims
- 1. A resistor trimming method, comprising steps of:
- forming a first slit from an edge of a resistor formed between a pair of electrodes provided on an insulating substrate, said first slit being in the proximity of and in parallel to one of said electrodes;
- forming a second slit as a continuation of said first slit toward to the other one of said electrodes and perpendicular to said first slit; and
- forming at least one approximately L-shaped slit from an end of either one of said first slit or said second slit as a continuation of said first slit or said second slit.
- 2. The resistor trimming method according to claim 1, wherein said L-shaped slit is formed as a continuation of said first slit.
- 3. The resistor trimming method according to claim 1, wherein said L-shaped slit is formed as a continuation of said second slit.
- 4. A resistor trimming method, comprising steps of:
- forming a first slit from an edge of a resistor formed between a pair of electrodes provided on an insulating substrate, said first slit being in the proximity of and parallel to a first one of said electrodes;
- forming a second slit as a continuation of said first slit toward a second one of said electrodes and perpendicular to said first slit;
- forming a third slit from an edge of said resistor in the proximity of and in parallel to the second of said electrodes;
- forming a fourth slit as a continuation of said third slit toward the first one of said electrodes and perpendicular to said third slit;
- forming at least one approximately L-shaped additional slit as a continuation of said first slit; and
- forming at least one approximately L-shaped further slit as a continuation of said third slit, said at least one additional slit and said at least one further slit alternate spatially with one another.
Priority Claims (1)
Number |
Date |
Country |
Kind |
7-032523 |
Feb 1995 |
JPX |
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Parent Case Info
This application is a divisional of application Ser. No. 08/604,016, filed Feb. 20, 1996.
US Referenced Citations (5)
Divisions (1)
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Number |
Date |
Country |
Parent |
604016 |
Feb 1996 |
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