Patent Application
20210344092
The present invention relates to a resonator, and a filter and a communication device using the same.
A resonator including a columnar conductor, which is connected to the ground at one end thereof, received in a shield case is known (refer to Patent Literature 1, for example). Also, a resonator including a columnar dielectric received in a shield case is known (refer to Patent Literature 2, for example).
Patent Literature 1: Japanese Unexamined Patent Publication JP-A 2011-35792
Patent Literature 2: Japanese Unexamined Utility Model Publication JP-U 63-159904 (1988)
A resonator according to the present disclosure includes:
A filter according to the disclosure includes:
A communication device according to the disclosure includes: an antenna; a communication circuit; and the filter mentioned above connected to the antenna and the communication circuit.
The disclosure can obtain a compact resonator having excellent electrical characteristics. The disclosure can obtain a compact filter having excellent electrical characteristics. The disclosure can obtain a compact communication device having excellent communication quality.
Other and further objects, features, and advantages of the invention will be more explicit from the following detailed description taken with reference to the drawings wherein:
A resonator, a filter, and a communication device according to the invention will now be described in detail with reference to the drawings.
The resonator according to this embodiment includes a shield housing 10, a first resonant element 11, and a second resonant element 12. The shield housing 10 includes a first conductor portion 13 and a second conductor portion 14. The first resonant element 11 may be made of a variety of heretofore known electroconductive materials, including metals and non-metallic electroconductive substances. In order to improve the characteristics of the resonator, an electroconductive material predominantly composed of Ag or an Ag alloy such as a Ag—Pd alloy or a Ag—Pt alloy; an electroconductive Cu-based material; an electroconductive W-based material, an electroconductive Mo-based material, or an electroconductive Pd-based material may be used.
The shield housing 10, in the form of a rectangular parallelepiped box which has a cavity 19 therein, is connected to a reference potential. The reference potential is called “ground potential” or “earth potential”, or also “grounding potential”. The shield housing 10 is constituted by joining the first conductor portion 13 and the second conductor portion 14 together via an electroconductive joining material. The first conductor portion 13 is located on a side of −Z direction which is a first direction (lower side as viewed in
The first conductor portion 13 and the second conductor portion 14 may be made of a variety of known electroconductive materials, including metals and non-metallic electroconductive substances. In order to improve the characteristics of the resonator, an electroconductive material predominantly composed of Ag or an Ag alloy such as a Ag—Pd alloy or a Ag—Pt alloy; an electroconductive Cu-based material; an electroconductive W-based material, an electroconductive Mo-based material, or an electroconductive Pd-based material may be used.
A variety of known electroconductive joining materials, including solder and an electroconductive adhesive, may be used as the electroconductive joining material for joining the first conductor portion 13 and the second conductor portion 14 together. In some cases, the first conductor portion 13 and the second conductor portion 14 may be screw- or bolt-fastened to each other. Moreover, while the cavity 19 is filled with air, a vacuum may be created therein, or the cavity 19 may be filled with other gaseous substance than air, e.g. an inert gas.
The first resonant element 11, which lies at the center of the cavity 19 in a plan view as shown in
In this embodiment, the first resonant element 11 is constituted by a conductor, and the resonator according to this embodiment serves as a resonator having a resonant mode analogous to TEM mode.
In this embodiment, the first resonant element 11 may be made of a variety of known electroconductive materials, including metals and non-metallic electroconductive substances. In order to improve the characteristics of the resonator, an electroconductive material predominantly composed of Ag or an alloy of Ag such as a Ag—Pd alloy or a Ag—Pt alloy; an electroconductive Cu material; an electroconductive W material, an electroconductive Mo material, and an electroconductive Pd material may be suitably selected and used. The first resonant element 11 may be formed of a columnar dielectric or insulator on a surface of which an electroconductive layer is provided. The first resonant element 11 may also be made of a resin material such as epoxy resin coated with a conductor layer.
The second resonant element 12 lies at the center of the cavity 19 coaxially with the first resonant element 11, and is shaped in a circular cylinder extending in the ±Z direction. The first resonant element 11 lies at the center of the interior of the second resonant element 12. That is, the second resonant element 12 is radially outwardly spaced from the first resonant element 11 by a distance δ2 so as to surround the first resonant element 11. Moreover, the second resonant element 12 is joined, at an end in the +Z direction which is the second direction, to the second conductor portion 14 via an electroconductive joining material. A distance δ3 is provided between an end of the second resonant element 12 in the −Z direction and the shield housing 10. That is, the entire surface of the end of the second resonant element 12 in the +Z direction is bonded to the second conductor portion 14, and the surface of the end of the second resonant element 12 in the −Z direction and the first conductor portion 13 of the shield housing 10 are spaced apart by the distance δ3.
The length of the first resonant element 11 in the +Z direction may be set at a value equal to or above 80% of the dimension of the cavity 19 in the +Z direction, or a value equal to or more than 90% of the dimension of the cavity 19 in the +Z direction. Moreover, one-half or more than one-half the total part of the first resonant element 11 in the +Z direction may be surrounded by the second resonant element 12. The ratio of the length of a part of the first resonant element 11 surrounded by the second resonant element 12 in the +Z direction to the total length of the first resonant element 11 in the +Z direction may be set at 50% or more. The above-described ratio may be set at 80% or more in the interest of electrical characteristic improvement, or more preferably set at 90% or more for further electrical characteristic improvement. This is grounded upon the utilization of even and odd modes for coupling between the first resonant element 11 and the second resonant element 12 in accordance with the principle of resonant mode concerned. In this case, the greater the ratio of the length in the +Z direction, the stronger the coupling in the even and odd modes, thus causing the even and odd-mode resonant frequencies to be apart. At this time, further decrease in frequency can be achieved by adjustment of the volume of the dielectric constituting the second resonant element 12. Moreover, magnetic field concentration on the first resonant element 11 can be reduced by adjustment of the dielectric of the second resonant element 12, thus allowing a magnetic field to spread to the second resonant element 12. This can improve a Q value. Thus, as a matter of importance, the ratio of the length in the +Z direction needs to be set at a reasonably large value. The dimensions of the cavity 19, the diameter of the first resonant element 11, the distance 52 between the first resonant element 11 and the second resonant element 12, and the thickness of the second resonant element 12 are determined properly in conformity with the desired size, the resonant frequency of fundamental-mode resonance, and the resonant frequency of higher order-mode resonance.
As a material of the second resonant element 12, known dielectric materials including dielectric ceramics may be used. For example, a dielectric ceramic material containing BaTiO3, Pb4Fe2Nb2O12, TiO2, etc. may be preferably used. In some cases, a resin such as epoxy resin may be used. A variety of known electroconductive joining materials, including an electroconductive adhesive, may be used as the electroconductive joining material for joining the second resonant element 12 and the shield housing 10 together.
Such a second resonant element 12 includes: a conductor-made inner wall-covering layer 3 located on an inner wall surface thereof; a conductor-made end wall-covering layer 4 located on an end in the −Z direction which is the first direction; and a conductor-made junction end-covering layer 5 located on an end in the +Z direction which is the second direction. The materials of construction of the inner wall-covering layer 3, the end wall-covering layer 4, and the junction end-covering layer 5 may be suitably selected and used from materials similar to those used for the first resonant element 11, namely an electroconductive material predominantly composed of Ag or an Ag alloy such as a Ag—Pd alloy or a Ag—Pt alloy; an electroconductive Cu-based material; an electroconductive W-based material, an electroconductive Mo-based material, and an electroconductive Pd-based material. For example, these layers are each made in the form of a 5 to 20 μm-thick electroconductive film through a metallization process. The lower limit of the film thickness has to be greater than a thickness value set for a skin effect corresponding to a frequency in use. The junction end-covering layer 5 may be joined to the shield housing 10 via solder, for example. In this case, the junction end-covering layer 5 and the solder serve as the electroconductive joining material.
The resonator according to this embodiment includes: the shield housing 10; the first resonant element 11; and the second resonant element 12. The shield housing 10 includes: the first conductor portion 13 located on the −Z direction side; and the second conductor portion 14 located on the +Z direction side which is opposite to the −Z direction side. Moreover, the shield housing 10 has the cavity 19 therein. The first resonant element 11 is formed of a conductor, has a columnar shape, and lies within the cavity 19, and an end of the first resonant element 11 in the −Z direction is joined to the first conductor portion 13, and the distance is provided between the other end of the first resonant element 11 in the +Z direction and the shield housing 10. The second resonant element 12 lies within the cavity 19, an end of the second resonant element 12 in the +Z direction is joined to the second conductor portion 14, and the distance is provided between the other end of the second resonant element 12 in the −Z direction and the shield housing 10, and the second resonant element 12 surrounds the first resonant element 11 at a distance therefrom. Thus constructed, the resonator according to this embodiment serves as a resonator having a resonant mode analogous to TEM mode.
Difficulties have been experienced in downsizing resonators from the related art as described in Patent Literature 1, for example. For cases where size reduction is achieved by setting a dielectric so as to fill up the interior of the shield case, the resonant frequency of higher order-mode resonance is greatly decreased to a level proximate to the resonant frequency of fundamental-mode resonance, which results in poor electrical characteristics. Furthermore, for cases where size reduction is achieved by placing a dielectric between the open end of the columnar conductor serving as the first resonant element and the shield case, the Q value is greatly decreased, which results in poor electrical characteristics.
As contrasted to such a resonator from the related art, the resonator according to this embodiment can have smaller size compared to a resonator from the related art as described in Patent Literature 1, etc., can suppress a decrease in the resonant frequency of higher order-mode resonance compared to a resonator from the related art as described in Patent Literature 1, etc., configured so that a dielectric is set so as to fill up the interior of the shield case, and can suppress a decrease in the Q value compared to a resonator from the related art as described in Patent Literature 1, etc., configured so that a dielectric is interposed between the open end of the columnar conductor and the shield case. That is, the resonator according to this embodiment has excellent electrical characteristics accruing from an appreciable difference between the resonant frequency of fundamental-mode resonance and the resonant frequency of higher order-mode resonance, and a high Q value. In addition to that, the resonator has small size. In short, the resonator according to this embodiment is compact yet excels in electrical characteristics.
Moreover, the thereby constructed resonator according to this embodiment is produced by following the steps below in the order presented: forming a unitary structure by bonding the end of the first resonant element 11 in the −Z direction to the first conductor portion 13; forming another unitary structure by bonding the end of the second resonant element 12 in the +Z direction to the second conductor portion 14; and joining the first conductor portion 13 and the second conductor portion 14 in a manner such that the first resonant element 11 is located inside the second resonant element 12. This procedure permits easy manufacture of the highly reliable resonator in which the end of the first resonant element 11 in the −Z direction is securely joined to the first conductor portion 13, and the end of the second resonant element 12 in the +Z direction is securely joined to the second conductor portion 14.
Moreover, in the resonator according to this embodiment, the second resonant element 12 is cylindrically shaped. Thus, since the first resonant element 11 can be surrounded by a single second resonant element 12 of simple configuration at a distance therefrom, greater mass-producibility of the resonator is achieved.
Simulation conditions set for the numerical analytical model were as follows: the dielectric constituting the second resonant element 12 had a relative permittivity of 43 and a dielectric loss tangent of 3×10−5; the first conductor portion 13, the second conductor portion 14, and the first resonant element 11 each had an electrical conductivity of 4.2×107 S/m; the cavity 19 had a dimension of 38 mm in a positive direction along the X axis (+X direction) and in a positive direction along the Y axis (+Y direction); the cavity 19 had a dimension of 20 mm in the +Z direction; the first resonant element 11 was set to 9 mm in diameter; the first resonant element 11 was set to 19 mm in length (dimension in the +Z direction); the second resonant element 12 was set to 11 mm in inside diameter; the second resonant element 12 was set to 20 mm in outside diameter; and the second resonant element 12 was set to 19 mm in length (dimension in the +Z direction). The numerical analytical model had the inner wall-covering layer 3 and the end wall-covering layer 4, but had no outer wall-covering layer 6. The inner wall-covering layer 3 and the end wall-covering layer 4 were each set to 10 μm in thickness.
The simulation showed that: the resonant frequency of fundamental-mode resonance was 670 MHz; the Q value of fundamental-mode resonance was 2952; the resonant frequency of higher order-mode resonance with the lowest frequency was 2.74 GHz; and the resonant frequency of higher order-mode resonance was 2.95 GHz. Note that the higher-order mode does not refer to one of the even and odd modes under the principle of resonant mode concerned but refers to a mode corresponding to the dielectric. It will be seen from the analytical results that the construction according to the disclosure is higher in terms of higher-order mode level than typical dielectric resonators due to the small volume of the dielectric.
The numerical analysis on Comparative example 1 showed that: the resonant frequency of fundamental-mode resonance was 1.05 GHz; the Q value of fundamental-mode resonance was 3828; the resonant frequency of higher order-mode resonance was 2.63 GHz; and the Q value of higher order-mode resonance with the lowest frequency was 2612.
It will be seen from the analytical results that the resonator according to Comparative example 1, while being equivalent to a conventional quarter-wavelength semi-coaxial resonator in terms of magnetic field distribution, is higher than the resonator according to the first embodiment in respect of electric field distribution, that is; both of the resonant frequency of fundamental-mode resonance and the resonant frequency of higher order-mode resonance of Comparative example 1, while being lower than those of the conventional resonator, are higher than those of the first embodiment. As a matter of course, in order to decrease frequency, an increase in resonator size is necessary.
The numerical analysis on Comparative example 2 showed that: the resonant frequency of fundamental-mode resonance was 0.81 GHz; the Q value of fundamental-mode resonance was 3206; the resonant frequency of higher order-mode resonance with the lowest frequency was 7.88 GHz; and the Q value of higher order-mode resonance was 4244.
It will be seen from the analytical results that the resonator according to Comparative example 2, though greater in respect of intermetallic magnetic-field distribution, basically possesses the characteristics of magnetic field distribution of the resonator according to the first embodiment, and yet exhibit higher resonant frequency of fundamental-mode resonance and higher resonant frequency of higher order-mode resonance.
The numerical analysis on Comparative example 3 showed that: the resonant frequency of fundamental-mode resonance was 0.95 GHz; the Q value of fundamental-mode resonance was 1902; the resonant frequency of higher order-mode resonance with the lowest frequency was 6.74 GHz; and the Q value of higher order-mode resonance was 1459.
It will be seen from the analytical results that the resonator according to Comparative example 3 exhibits a lower Q value due to an increase in magnetic field level between conductors and the absence of magnetic field around the conductors, and exhibits higher resonant frequency of fundamental-mode resonance and higher resonant frequency of higher order-mode resonance.
It will be seen from the analytical results that, in respect of electric field distribution, an increase in electric field intensity at the end of the second resonant element 12 in the −Z direction which is the first direction resulted in a decrease in frequency, and, in respect of magnetic field distribution, a decrease in electric field intensity at the end of the second resonant element 12 in the −Z direction, in particular, a decrease in inter-conductor electric field intensity between the first resonant element 11 and the inner wall-covering layer 3, resulted in a higher Q.
It will be seen from the analytical results that, as compared with the resonator according to the third embodiment, the resonator according to the fourth embodiment exhibits further decrease in frequency with no significant lowering in Q value.
It will be seen from the analytical results that, as compared with the resonator according to the fourth embodiment, the resonator according to the fifth embodiment exhibits further decrease in frequency, and, though lower in Q value, undergoes no significant lowering in Q value.
The second resonant element 12 includes: a conductor-made inner wall-covering layer 3 located on an inner wall surface thereof; a conductor-made end wall-covering layer 4 located on an end in the −Z direction; and a conductor-made junction end-covering layer 5 located on an end in the +Z direction. In a region corresponding to the distance 53 between the first conductor portion 13 and the end of the second resonant element 12 in the −Z direction, a support portion 7 formed of a low-permittivity dielectric is located. The support portion 7 may be shaped in a short cylinder defined by a plurality of equiangularly spaced-apart pieces.
The placement of such a support portion 7 permits pressure bonding of the second resonant element 12 for bringing the second resonant element 12 into conduction. In this case, the support portion 7 may be made of a low-loss and somewhat deformable material such as polytetrafluoroethylene.
The placement of such a hold-down portion 8 enables further decrease in resonant frequency. The hold-down portion 8 may be made of a low-loss material such as ceramic or polytetrafluoroethylene.
The placement of such a recess portion 23 can restrain solder from spreading out of the conductor coating film, and thereby prevent changes in the area of the conductor. As a rule, a similar effect can be attained by setting overcoat glass in a location other than a junction on the conductor coating film.
For example, such a frequency adjuster 9 is built as a metallic bolt. Resonant frequency adjustment is carried out by allowing the frequency adjuster 9 to threadedly advance and retract with respect to the second conductor portion 14.
The resonator according to this embodiment further includes a conductor-made frequency adjuster 9a located in the second conductor portion 14. The first resonant element 11a is shaped in a bottomed cylinder which opens in the +Z direction. The frequency adjuster 9a is loosely fitted in the central hole of the first resonant element 11 so as to be movable. The first resonant element 11a passes threadedly through the first conductor portion 13 in a thickness direction parallel to the −Z direction and the +Z direction. Resonant frequency adjustment is carried out by varying an overlap amount of the frequency adjuster 9a and the first resonant element 11a.
In this way, the frequency adjuster 9 was inserted into the cavity 19 with varying protruding amounts. At the protruding amount of 2 mm, the resonant frequency varied by 0.007 GHz. At the protruding amount of 4 mm, the resonant frequency varied by 0.014 GHz. It will thus be seen that the resonant frequency can be adjusted by varying the protruding amount of the frequency adjuster 9 exposedly inserted in the cavity 19.
Such a configuration permits connection of the dielectric to the base portion 25 in advance. The use of the base portion 25 which is sufficiently small relative to the size of resonator housing facilitates heat application during solder connection.
(Filter)
Thus constructed, the communication device according to this embodiment removes unnecessary electric signals with the compact filter having excellent electrical characteristics, the use of which permits downsizing of the communication device and enables the communication device to perform excellent communication quality.
It should be understood that the application of the invention is not limited to the embodiments described heretofore, and that various changes, modifications, and improvements are possible in accordance with the technical ideas of the invention.
For example, while the foregoing embodiments have been described with respect to the case where the first resonant element 11 is shaped in a circular cylinder, the shape of the first resonant element 11 is not limited to this. For example, the first resonant element 11 may be shaped in a rectangular prism, a hexagonal prism, or an elliptical column. Moreover, as in the resonator described in Patent Literature 1, the first resonant element 11 may be made with varying cross-sectional area.
Moreover, while the foregoing embodiments have been described with respect to the case where a single cylindrical second resonant element 12 surrounds the first resonant element 11, the arrangement of the second resonant element 12 is not limited to this. For example, the second resonant element 12 may be provided with slits extending in the +Z direction so that it can be divided into four pieces. That is, a plurality of second resonant elements 12 may be arranged so as to surround the columnar element 21.
Moreover, while the filter according to the one embodiment has been illustrated as incorporating the first resonator 20a and the second resonator 20b that are each structurally identical with the resonator according to the second embodiment, the resonator structure is not limited to this. For example, the first and second resonators 20a and 20b may have the same structure as that of the resonator according to the first embodiment or any one of the third to thirteenth embodiments, or may have other structure.
Moreover, while the foregoing embodiments have been described with respect to the case where the filter includes two resonators, namely the resonator 20a and the resonator 20b, the filter construction is not limited to this. The filter may include three or more resonators. In this case, an additional resonator or additional resonators are placed between the first resonator 20a and the second resonator 20b, and all the resonators are electromagnetically coupled to one another. Moreover, in conformance with conventional filter design, an attenuation pole may be formed by cross-coupling of non-adjacent resonators.
The invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description and all changes which come within the meaning and the range of equivalency of the claims are therefore intended to be embraced therein.
3: Inner wall-covering layer
4: End wall-covering layer
5: Junction end-covering layer
6: Outer wall-covering layer
7: Support portion
8: Hold-down portion
9: Frequency adjuster
10: Shield housing
11: First resonant element
12: Second resonant element
13: First conductor portion
14: Second conductor portion
18
a: First terminal portion
18
b: Second terminal portion
19: Cavity
20
a: First resonator
20
b: Second resonator
| Number | Date | Country | Kind |
|---|---|---|---|
| 2018-170934 | Sep 2018 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2019/035375 | 9/9/2019 | WO | 00 |
